TWI672741B - 蝕刻方法及電漿處理裝置 - Google Patents

蝕刻方法及電漿處理裝置 Download PDF

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Publication number
TWI672741B
TWI672741B TW106125570A TW106125570A TWI672741B TW I672741 B TWI672741 B TW I672741B TW 106125570 A TW106125570 A TW 106125570A TW 106125570 A TW106125570 A TW 106125570A TW I672741 B TWI672741 B TW I672741B
Authority
TW
Taiwan
Prior art keywords
reaction layer
gas
etched
etching
detaching
Prior art date
Application number
TW106125570A
Other languages
English (en)
Chinese (zh)
Other versions
TW201841247A (zh
Inventor
松井都
Miyako Matsui
桑原謙一
Kenichi Kuwahara
安井尚輝
Naoki Yasui
伊澤勝
Masaru Izawa
臼井建人
Tatehito Usui
大森健史
Takeshi Ohmori
Original Assignee
日立全球先端科技股份有限公司
Hitachi High-Technologies Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司, Hitachi High-Technologies Corporation filed Critical 日立全球先端科技股份有限公司
Publication of TW201841247A publication Critical patent/TW201841247A/zh
Application granted granted Critical
Publication of TWI672741B publication Critical patent/TWI672741B/zh

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Classifications

    • H10P74/238—
    • H10P50/242—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H10P50/00—
    • H10P50/266—
    • H10P50/283—
    • H10P50/285—
    • H10P50/73—
    • H10P72/0421—
    • H10P72/06—
    • H10P72/0604—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches
    • H10P74/203—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
TW106125570A 2017-03-17 2017-07-28 蝕刻方法及電漿處理裝置 TWI672741B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-052066 2017-03-17
JP2017052066A JP6820775B2 (ja) 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201841247A TW201841247A (zh) 2018-11-16
TWI672741B true TWI672741B (zh) 2019-09-21

Family

ID=63519523

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106125570A TWI672741B (zh) 2017-03-17 2017-07-28 蝕刻方法及電漿處理裝置

Country Status (4)

Country Link
US (1) US10665516B2 (OSRAM)
JP (1) JP6820775B2 (OSRAM)
KR (1) KR101990331B1 (OSRAM)
TW (1) TWI672741B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN111436219B (zh) * 2018-11-14 2023-09-19 株式会社日立高新技术 等离子处理装置以及利用其的被处理样品的处理方法
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
JP7339032B2 (ja) * 2019-06-28 2023-09-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
WO2021124539A1 (ja) * 2019-12-20 2021-06-24 株式会社日立ハイテク プラズマ処理装置およびウエハ処理方法
CN113302722B (zh) * 2019-12-23 2023-12-08 株式会社日立高新技术 等离子处理方法以及等离子处理中使用的波长选择方法
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
WO2022059114A1 (ja) * 2020-09-17 2022-03-24 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102753119B1 (ko) * 2020-12-16 2025-01-14 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
DE102021200627A1 (de) * 2021-01-25 2022-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Solarzelle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
US9530666B2 (en) * 2012-09-18 2016-12-27 Tokyo Electron Limited Plasma etching method and plasma etching apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3694662B2 (ja) 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP2005294348A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4969545B2 (ja) * 2008-09-22 2012-07-04 株式会社日立ハイテクノロジーズ 半導体製造装置
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
JP6072613B2 (ja) * 2013-05-30 2017-02-01 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6550278B2 (ja) * 2015-06-24 2019-07-24 東京エレクトロン株式会社 エッチング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
US9530666B2 (en) * 2012-09-18 2016-12-27 Tokyo Electron Limited Plasma etching method and plasma etching apparatus

Also Published As

Publication number Publication date
KR20180106797A (ko) 2018-10-01
US10665516B2 (en) 2020-05-26
TW201841247A (zh) 2018-11-16
US20180269118A1 (en) 2018-09-20
JP2018157048A (ja) 2018-10-04
JP6820775B2 (ja) 2021-01-27
KR101990331B1 (ko) 2019-06-18

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