KR101990331B1 - 에칭 방법 및 플라스마 처리 장치 - Google Patents

에칭 방법 및 플라스마 처리 장치 Download PDF

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KR101990331B1
KR101990331B1 KR1020170091300A KR20170091300A KR101990331B1 KR 101990331 B1 KR101990331 B1 KR 101990331B1 KR 1020170091300 A KR1020170091300 A KR 1020170091300A KR 20170091300 A KR20170091300 A KR 20170091300A KR 101990331 B1 KR101990331 B1 KR 101990331B1
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reaction layer
gas
etching
etched
desorption
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KR20180106797A (ko
Inventor
미야코 마츠이
겐이치 구와하라
나오키 야스이
마사루 이자와
다테히토 우스이
다케시 오모리
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H10P74/238—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H10P50/00—
    • H10P50/266—
    • H10P50/283—
    • H10P50/285—
    • H10P50/73—
    • H10P72/0421—
    • H10P72/06—
    • H10P72/0604—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches
    • H10P74/203—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
KR1020170091300A 2017-03-17 2017-07-19 에칭 방법 및 플라스마 처리 장치 Active KR101990331B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017052066A JP6820775B2 (ja) 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置
JPJP-P-2017-052066 2017-03-17

Publications (2)

Publication Number Publication Date
KR20180106797A KR20180106797A (ko) 2018-10-01
KR101990331B1 true KR101990331B1 (ko) 2019-06-18

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Country Link
US (1) US10665516B2 (OSRAM)
JP (1) JP6820775B2 (OSRAM)
KR (1) KR101990331B1 (OSRAM)
TW (1) TWI672741B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN111436219B (zh) * 2018-11-14 2023-09-19 株式会社日立高新技术 等离子处理装置以及利用其的被处理样品的处理方法
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
JP7339032B2 (ja) * 2019-06-28 2023-09-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
WO2021124539A1 (ja) * 2019-12-20 2021-06-24 株式会社日立ハイテク プラズマ処理装置およびウエハ処理方法
CN113302722B (zh) * 2019-12-23 2023-12-08 株式会社日立高新技术 等离子处理方法以及等离子处理中使用的波长选择方法
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
WO2022059114A1 (ja) * 2020-09-17 2022-03-24 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102753119B1 (ko) * 2020-12-16 2025-01-14 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
DE102021200627A1 (de) * 2021-01-25 2022-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Solarzelle

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294348A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
JP3694662B2 (ja) 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP4969545B2 (ja) * 2008-09-22 2012-07-04 株式会社日立ハイテクノロジーズ 半導体製造装置
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
JP6141855B2 (ja) * 2012-09-18 2017-06-07 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP6072613B2 (ja) * 2013-05-30 2017-02-01 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6550278B2 (ja) * 2015-06-24 2019-07-24 東京エレクトロン株式会社 エッチング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294348A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

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Publication number Publication date
KR20180106797A (ko) 2018-10-01
US10665516B2 (en) 2020-05-26
TW201841247A (zh) 2018-11-16
US20180269118A1 (en) 2018-09-20
TWI672741B (zh) 2019-09-21
JP2018157048A (ja) 2018-10-04
JP6820775B2 (ja) 2021-01-27

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