JP6820775B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

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JP6820775B2
JP6820775B2 JP2017052066A JP2017052066A JP6820775B2 JP 6820775 B2 JP6820775 B2 JP 6820775B2 JP 2017052066 A JP2017052066 A JP 2017052066A JP 2017052066 A JP2017052066 A JP 2017052066A JP 6820775 B2 JP6820775 B2 JP 6820775B2
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Prior art keywords
gas
reaction layer
etched
etching
layer forming
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JP2017052066A
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English (en)
Japanese (ja)
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JP2018157048A5 (OSRAM
JP2018157048A (ja
Inventor
都 松井
都 松井
桑原　謙一
謙一 桑原
安井　尚輝
尚輝 安井
伊澤　勝
勝 伊澤
臼井　建人
建人 臼井
大森　健史
健史 大森
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Priority to JP2017052066A priority Critical patent/JP6820775B2/ja
Priority to KR1020170091300A priority patent/KR101990331B1/ko
Priority to TW106125570A priority patent/TWI672741B/zh
Priority to US15/690,660 priority patent/US10665516B2/en
Publication of JP2018157048A publication Critical patent/JP2018157048A/ja
Publication of JP2018157048A5 publication Critical patent/JP2018157048A5/ja
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    • H10P50/242—
    • H10P74/238—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H10P50/00—
    • H10P50/266—
    • H10P50/283—
    • H10P50/285—
    • H10P50/73—
    • H10P72/0421—
    • H10P72/06—
    • H10P72/0604—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches
    • H10P74/203—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
JP2017052066A 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置 Active JP6820775B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017052066A JP6820775B2 (ja) 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置
KR1020170091300A KR101990331B1 (ko) 2017-03-17 2017-07-19 에칭 방법 및 플라스마 처리 장치
TW106125570A TWI672741B (zh) 2017-03-17 2017-07-28 蝕刻方法及電漿處理裝置
US15/690,660 US10665516B2 (en) 2017-03-17 2017-08-30 Etching method and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017052066A JP6820775B2 (ja) 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2018157048A JP2018157048A (ja) 2018-10-04
JP2018157048A5 JP2018157048A5 (OSRAM) 2019-06-27
JP6820775B2 true JP6820775B2 (ja) 2021-01-27

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JP2017052066A Active JP6820775B2 (ja) 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置

Country Status (4)

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US (1) US10665516B2 (OSRAM)
JP (1) JP6820775B2 (OSRAM)
KR (1) KR101990331B1 (OSRAM)
TW (1) TWI672741B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN111436219B (zh) * 2018-11-14 2023-09-19 株式会社日立高新技术 等离子处理装置以及利用其的被处理样品的处理方法
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
JP7339032B2 (ja) * 2019-06-28 2023-09-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
WO2021124539A1 (ja) * 2019-12-20 2021-06-24 株式会社日立ハイテク プラズマ処理装置およびウエハ処理方法
CN113302722B (zh) * 2019-12-23 2023-12-08 株式会社日立高新技术 等离子处理方法以及等离子处理中使用的波长选择方法
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
WO2022059114A1 (ja) * 2020-09-17 2022-03-24 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102753119B1 (ko) * 2020-12-16 2025-01-14 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
DE102021200627A1 (de) * 2021-01-25 2022-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Solarzelle

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
JP3694662B2 (ja) 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP2005294348A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4969545B2 (ja) * 2008-09-22 2012-07-04 株式会社日立ハイテクノロジーズ 半導体製造装置
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
JP6141855B2 (ja) * 2012-09-18 2017-06-07 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP6072613B2 (ja) * 2013-05-30 2017-02-01 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6550278B2 (ja) * 2015-06-24 2019-07-24 東京エレクトロン株式会社 エッチング方法

Also Published As

Publication number Publication date
KR20180106797A (ko) 2018-10-01
US10665516B2 (en) 2020-05-26
TW201841247A (zh) 2018-11-16
US20180269118A1 (en) 2018-09-20
TWI672741B (zh) 2019-09-21
JP2018157048A (ja) 2018-10-04
KR101990331B1 (ko) 2019-06-18

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