TWI670133B - 雷射加工裝置 - Google Patents

雷射加工裝置 Download PDF

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TWI670133B
TWI670133B TW105107379A TW105107379A TWI670133B TW I670133 B TWI670133 B TW I670133B TW 105107379 A TW105107379 A TW 105107379A TW 105107379 A TW105107379 A TW 105107379A TW I670133 B TWI670133 B TW I670133B
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pulsed laser
laser light
path
mirror
pulsed
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名雪正寿
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日商迪思科股份有限公司
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/12—Scanning systems using multifaceted mirrors
    • G02B26/121—Mechanical drive devices for polygonal mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
    • H01S3/1024—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping for pulse generation
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    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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Abstract

提供一種雷射加工裝置，能夠重複照射雷射光線而有效率地實施燒蝕加工。
雷射加工裝置之雷射光線照射機構，具備：脈衝雷射振盪器，振盪脈衝雷射光線；聚光器，將從脈衝雷射振盪器振盪出的雷射光線予以聚光並照射至被保持於夾盤平台之被加工物；多邊形鏡，配設於脈衝雷射振盪器與聚光器之間，係複數個鏡相對於旋轉軸以同心狀配設而成，令從脈衝雷射振盪器振盪出的脈衝雷射光線分散；及誘導手段，配設於脈衝雷射振盪器與多邊形鏡之間，誘導脈衝雷射光線以避免脈衝雷射光線照射至鄰接的鏡之角部。

Description

雷射加工裝置
本發明有關對被保持於夾盤平台之半導體晶圓等被加工物施以雷射加工之雷射加工裝置。
半導體裝置製造程序中，會在略圓板形狀的半導體晶圓的表面藉由排列成格子狀之分割預定線區隔為複數個區域，而在該區隔出的區域形成IC、LSI等裝置。然後，將半導體晶圓沿著分割預定線切斷，藉此將形成有裝置之區域予以分割而製造各個半導體裝置。
近來，為了提升IC、LSI等半導體晶片的處理能力，下述形態之半導體晶圓正趨於實用化，即，在矽等基板的表面層積由SiOF、BSG(SiOB)等無機物系的膜、或由聚醯亞胺系、聚對二甲苯(parylene)系等的聚合物膜亦即有機物系的膜所構成之低介電率絕緣體被膜(Low-k膜)而成之機能層，藉此使半導體裝置形成。
沿著這樣的半導體晶圓的分割預定線而做之分割，通常會藉由稱為切割鋸(dicing saw)的切割裝置來進行。該切割裝置，具備：夾盤平台(chuck table)， 保持被加工物亦即半導體晶圓；及切割手段，用來切割被保持於該夾盤平台之半導體晶圓；及移動手段，令夾盤平台與切割手段相對地移動。切割手段，包含受命高速旋轉之旋轉心軸(spindle)及被裝配於該心軸之切割刀。切割刀由圓盤狀的基台與被裝配於該基台的側面外周部之環狀的切刃所構成，切刃例如是將粒徑3μm程度的鑽石研磨粒藉由電鑄予以固定而形成。
然而，上述Low-k膜，難以藉由切割刀切割。亦即，Low-k膜如雲母般非常地脆，因此若藉由切割刀沿著分割預定線切割，則Low-k膜會剝離，該剝離會波及至電路而有對裝置帶來致命的損傷之問題。
為了消弭上述問題，下述專利文獻1揭示一種晶圓的分割方法，即，在形成於半導體晶圓之分割預定線的寬度方向的兩側沿著分割預定線照射雷射光線，而沿著分割預定線形成2條雷射加工溝將由Low-k膜所構成之層積體截斷，並將切割刀定位於該2條雷射加工溝的外側間而將切割刀與半導體晶圓相對移動，藉此將半導體晶圓沿著分割預定線切斷。
〔先前技術文獻〕 〔專利文獻〕
〔專利文獻1〕日本特開2005-64231號公報
然而，若沿著分割預定線照射雷射光線來做燒蝕(ablation)加工藉此除去由Low-k膜所構成之層積體而形成雷射加工溝，則層積體的飛散的熔融物會回填至雷射加工溝，欲形成足夠寬度的雷射加工溝必須要沿著分割預定線照射複數次雷射光線，有生產性不佳的問題。
此外，在沿著分割預定線照射對於晶圓具有吸收性的波長之雷射光線來做燒蝕加工藉此形成分割溝而將晶圓分割成各個裝置之技術當中，同樣地熔融物會回填至分割溝，欲形成分割所必要的分割溝必須要沿著分割預定線照射複數次雷射光線，有生產性不佳的問題。
本發明係有鑑於上述事實而研發，其主要的技術課題在於提供一種雷射加工裝置，能夠重複照射雷射光線而有效率地實施燒蝕加工。
為解決上述主要技術課題，按照本發明，係提供一種雷射加工裝置，具備：夾盤平台，保持被加工物；及雷射光線照射機構，對被保持於該夾盤平台之被加工物做雷射加工；該雷射加工裝置，其特徵為：該雷射光線照射機構，具備：脈衝雷射振盪器，振盪脈衝雷射光線；聚光器，將從該脈衝雷射振盪器振盪出的雷射光線予以聚光並照射至被保持於該夾盤平台之被加工物；多邊形鏡，配設於該脈衝雷射振盪器與該聚光器之間，係複數個 鏡相對於旋轉軸以同心狀配設而成，令從該脈衝雷射振盪器振盪出的脈衝雷射光線分散；及誘導手段，配設於該脈衝雷射振盪器與該多邊形鏡之間，誘導脈衝雷射光線以避免脈衝雷射光線照射至鄰接的鏡之角部。
上述誘導手段，包含：光學性切換元件，將從脈衝雷射振盪器振盪出的脈衝雷射光線選擇性地引導至第1路徑與第2路徑；偏光光束分離器，將被引導至該第1路徑與該第2路徑之脈衝雷射光線引導至配設有該多邊形鏡之第3路徑；旋轉位置檢測手段，檢測該多邊形鏡的旋轉位置；及控制手段，依據來自該旋轉位置檢測手段的檢測訊號，控制該光學性切換元件以避免脈衝雷射光線照射至該多邊形鏡的鏡與鏡之角部；第1路徑與第2路徑，係被定位成該偏光光束分離器將被引導至第1路徑之脈衝雷射光線與被引導至該第2路徑之脈衝雷射光線相距規定的間隔予以分岐。
按照本發明之雷射加工裝置，脈衝雷射光線不會打到旋轉中的多邊形鏡的鏡與鏡之角部，故會防止因脈衝雷射光線打到多邊形鏡的鏡與鏡之角部而發生之脈衝雷射光線的散射。是故，便能夠消弭脈衝雷射光線打到多邊形鏡的鏡與鏡之角部，導致散射而無法照射至規定的加工區域，肇生加工損失，並且因脈衝雷射光線的散射而使得被加工物的品質降低之問題。
此外，本發明之雷射加工裝置的雷射光線照射機構中，脈衝雷射光線的複數脈衝會反覆照射至被保持於夾盤平台之被加工物，故會重複做燒蝕加工，因此能夠防止熔融物的回填，並藉由將夾盤平台做加工饋送，而能夠對身為被加工物之Low-k膜或基板等有效率地形成期望寬度之雷射加工溝。
2‧‧‧靜止基台
3‧‧‧夾盤平台機構
36‧‧‧夾盤平台
37‧‧‧X軸方向移動手段
38‧‧‧Y軸方向移動手段
4‧‧‧雷射光線照射單元
5‧‧‧雷射光線照射機構
51‧‧‧脈衝雷射振盪器
52‧‧‧輸出調整手段
53‧‧‧聚光器
54‧‧‧多邊形鏡
55‧‧‧誘導手段
552‧‧‧光學性切換元件
553‧‧‧偏光光束分離器
558‧‧‧旋轉位置檢測手段
6‧‧‧拍攝手段
7‧‧‧控制手段
〔圖1〕遵照本發明而構成之雷射加工裝置的立體圖。
〔圖2〕圖1所示雷射加工裝置中配備之雷射光線照射機構的方塊構成圖。
〔圖3〕從圖2所示雷射光線照射機構的脈衝雷射振盪器振盪出的脈衝雷射光線照射至被加工物之脈衝狀態示意說明圖。
以下參照所附圖面，詳細說明遵照本發明而構成之雷射加工裝置的良好實施形態。
圖1揭示本發明實施形態之雷射加工裝置1立體圖。圖1所示之雷射加工裝置1，具備：靜止基台2；及夾盤平台機構3，配設於該靜止基台2而可朝箭頭X所示加工饋送方向(X軸方向)移動，並保持被加工物； 及雷射光線照射單元4，配設於靜止基台2上，作為雷射光線照射手段。
上述夾盤平台機構3，具備：一對導軌31、31，沿X軸方向平行配設於靜止基台2上；及第1滑動塊32，配設於該導軌31、31上而可朝X軸方向移動；及第2滑動塊33，配設於該第1滑動塊32上而可朝和X軸方向正交之箭頭Y所示Y軸方向移動；及覆蓋平台35，在該第2滑動塊33上受到圓筒構件34支撐；及夾盤平台36，作為夾盤平台。該夾盤平台36具備由多孔性材料形成之吸附夾盤361，而在吸附夾盤361的上面亦即保持面上將被加工物亦即例如圓形狀的半導體晶圓藉由未圖示之吸附手段予以保持。像這樣構成的夾盤平台36，是藉由配設於圓筒構件34內之未圖示脈衝電動機令其旋轉。另，在夾盤平台36配設有夾鉗362，用來固定環狀的框架，該環狀的框架係透過保護膠帶支撐半導體晶圓等被加工物。
上述第1滑動塊32，在其下面設有與上述一對導軌31、31嵌合之一對被導引溝321、321，且在其上面設有沿Y軸方向平行形成之一對導軌322、322。像這樣構成的第1滑動塊32，係構成為藉由被導引溝321、321嵌合至一對導軌31、31，而可沿著一對導軌31、31朝X軸方向移動。本實施形態中的夾盤平台機構3，具備X軸方向移動手段37，用來令第1滑動塊32沿著一對導軌31、31朝X軸方向移動。X軸方向移動手段37，包 含：公螺桿371，平行配設於上述一對導軌31與31之間；及脈衝電動機372等驅動源，用來將該公螺桿371旋轉驅動。公螺桿371，其一端被支撐在固定於上述靜止基台2之軸承塊373而旋轉自如，其另一端和上述脈衝電動機372的輸出軸傳動連結。另，公螺桿371，與在第1滑動塊32的中央部下面突出設置之未圖示母螺牙塊上形成的貫通母螺牙孔螺合。是故，藉由脈衝電動機372將公螺桿371正轉及反轉驅動，藉此令第1滑動塊32沿著導軌31、31朝X軸方向移動。
上述第2滑動塊33，在其下面設有與設於上述第1滑動塊32的上面的一對導軌322、322嵌合之一對被導引溝331、331，藉由將該被導引溝331、331嵌合至一對導軌322、322，而構成為可朝Y軸方向移動。本實施形態之夾盤平台機構3，具備Y軸方向移動手段38，用來令第2滑動塊33沿著設於第1滑動塊32之一對導軌322、322朝Y軸方向移動。Y軸方向移動手段38，包含：公螺桿381，平行配設於上述一對導軌322與322之間；及脈衝電動機382等驅動源，用來將該公螺桿381旋轉驅動。公螺桿381，其一端被支撐在固定於上述第1滑動塊32的上面之軸承塊383而旋轉自如，其另一端和上述脈衝電動機382的輸出軸傳動連結。另，公螺桿381，與在第2滑動塊33的中央部下面突出設置之未圖示母螺牙塊上形成的貫通母螺牙孔螺合。是故，藉由脈衝電動機382將公螺桿381正轉及反轉驅動，藉此令第2滑動塊33 沿著導軌322、322朝Y軸方向移動。
上述雷射光線照射單元4，具備：支撐構件41，配設於上述靜止基台2上；及外殼42，受到該支撐構件41支撐，實質上水平地延伸；及雷射光線照射機構5，配設於該外殼42；及拍攝手段6，配設於外殼42的前端部而檢測應做雷射加工之加工區域。另，拍攝手段6，具備照明被加工物之照明手段、及捕捉受到該照明手段照明的區域之光學系統、及拍攝被該光學系統捕捉到的像之拍攝元件(CCD)等。
針對上述雷射光線照射機構5，參照圖2及圖3說明之。
雷射光線照射機構5，具備：脈衝雷射振盪器51；及輸出調整手段52，調整從該脈衝雷射振盪器51振盪出的脈衝雷射光線之輸出；及聚光器53，將藉由該輸出調整手段52而輸出受到調整之脈衝雷射光線予以聚光並照射至被保持於夾盤平台36之被加工物；及多邊形鏡54，配設於輸出調整手段52與聚光器53之間，係複數個鏡相對於旋轉軸以同心狀配設而成，該複數個鏡令從脈衝雷射振盪器51振盪並藉由輸出調整手段52而輸出受到調整之脈衝雷射光線分散；及誘導手段55，配設於脈衝雷射振盪器51與多邊形鏡54之間，誘導脈衝雷射光線以避免脈衝雷射光線照射至鄰接的鏡之角部。
脈衝雷射振盪器51，於本實施形態中係振盪波長為355nm的脈衝雷射光線LB。上述聚光器53，具備 fθ透鏡531，將從上述脈衝雷射振盪器51振盪並藉由輸出調整手段52而輸出受到調整之脈衝雷射光線予以聚光。另，上述脈衝雷射振盪器51及輸出調整手段52，係受到控制手段7控制。
上述多邊形鏡54，係複數個鏡541相對於旋轉軸542以同心狀配設，藉由掃描電動機(scan motor)543令其於圖2中箭頭A所示方向旋轉。另，本實施形態中，多邊形鏡54的鏡541，係裝配於正8角形外周面。像這樣構成的多邊形鏡54的掃描電動機543，係受到控制手段7控制。
上述誘導手段55，具備：光學性切換元件552，將從脈衝雷射振盪器51振盪出的脈衝雷射光線LB選擇性地引導至第1路徑551a與第2路徑551b；及偏光光束分離器553，將被引導至第1路徑551a與第2路徑551b之脈衝雷射光線引導至配設有多邊形鏡54之第3路徑551c。光學性切換元件552由聲光元件(acousto-optic device；AOD)或EOD(electro-optic device；電光元件)等所構成，在未被施加電壓訊號的狀態下將從脈衝雷射振盪器51振盪出的脈衝雷射光線LB引導至第1路徑551a，若被施加規定的電壓訊號則將從脈衝雷射振盪器51振盪出的脈衝雷射光線LB引導至第2路徑551b，並受到控制手段7控制。
在上述第1路徑551a，配設有：方向變換鏡554a，將藉由光學性切換元件552而被引導至第1路徑 551a之第1脈衝雷射光線LB1朝向偏光光束分離器553做方向變換；及1/2波長板555a，將藉由該方向變換鏡554a而被方向變換之第1脈衝雷射光線LB1相對於偏光光束分離器553以P偏光方式旋轉偏光面。此外，在第2路徑551b，配設有：方向變換鏡554b，將藉由光學性切換元件552而被引導至第2路徑551b之第2脈衝雷射光線LB2做方向變換；及1/2波長板555b，將藉由該方向變換鏡554b而被方向變換之第2脈衝雷射光線LB2相對於偏光光束分離器553以S偏光方式旋轉偏光面；及方向變換鏡556b，將藉由該1/2波長板555b而被偏光成S偏光之第2脈衝雷射光線LB2引導至偏光光束分離器553。
上述偏光光束分離器553，係令被偏光成P偏光之第1脈衝雷射光線LB1通過而引導至第3路徑551c，並將被偏光成S偏光之第2脈衝雷射光線LB2反射而引導至第3路徑551c。另，本實施形態中係構成為，被偏光成S偏光之第2脈衝雷射光線LB2，是和被偏光成P偏光之第1脈衝雷射光線LB1的光路相距規定的間隔(L)而入射至偏光光束分離器553。是故，第1脈衝雷射光線LB1和第2脈衝雷射光線LB2，係藉由偏光光束分離器553而相距規定的間隔(L)被分歧至第3路徑551c。被分歧至第3路徑551c之第1脈衝雷射光線LB1和第2脈衝雷射光線LB2，透過方向變換鏡557各自被引導至上述多邊形鏡54的第1位置54a和第2位置54b。
參照圖2進一步說明，誘導手段55具備檢測多邊形鏡54的旋轉位置之旋轉位置檢測手段558。本實施形態之旋轉位置檢測手段558，係由發光元件558a、及接受由該發光元件558a發光而在多邊形鏡54的鏡(反射面)541反射的光之受光元件558b所構成。另，受光元件558b，係被定位成接收在比多邊形鏡54的鏡541與鏡541之角部541a還略微靠近箭頭A所示旋轉方向前側的位置(B)反射之光，並將受光訊號送至控制手段7。
本實施形態中的雷射加工裝置係如以上般構成，以下說明上述雷射光線照射機構5所致之脈衝雷射光線的照射形態。例如，若多邊形鏡54的旋轉速度訂為500轉/秒，則因多邊形鏡54具備8面的鏡541，每一鏡541的移動時間會成為1/4000秒。另一方面，若從脈衝雷射振盪器51振盪之脈衝雷射光線LB的反覆頻率訂為40kHz，則照射至多邊形鏡54的每一鏡541之脈衝雷射光線會成為10脈衝。
如圖2所示，從脈衝雷射振盪器51振盪並藉由輸出調整手段52而輸出受到調整之脈衝雷射光線LB，被引導至構成誘導手段55之光學性切換元件552。若未對光學性切換元件552施加電壓訊號，則從脈衝雷射振盪器51振盪出的脈衝雷射光線LB會被引導至第1路徑551a。被引導至第1路徑551a之第1脈衝雷射光線LB1，透過方向變換鏡554a通過1/2波長板555a，藉此相對於偏光光束分離器553被偏光成P偏光。是故，被偏 光成P偏光之第1脈衝雷射光線LB1，會通過偏光光束分離器553而被引導至第3路徑551c。被引導至第3路徑551c之第1脈衝雷射光線LB1，透過方向變換鏡557被引導至上述多邊形鏡54的第1位置54a。多邊形鏡54朝箭頭A所示方向以規定的旋轉速度(本實施形態中為500轉/秒)旋轉，故將脈衝雷射光線的10脈衝(LB-1~LB-10)沿著Y軸方向引導至fθ透鏡531。像這樣被引導至fθ透鏡531之脈衝雷射光線的10脈衝(LB-1~LB-10)，各自藉由fθ透鏡531而被聚光，如圖3所示般沿著Y軸方向照射至被保持於夾盤平台36之被加工物W。是故，於Y軸方向例如以50μm的範圍照射10脈衝(LB-1~LB-10)，藉此便能施以寬度為50μm之雷射加工。
如上述般，當以藉由光學性切換元件552而被引導至第1路徑551a之第1脈衝雷射光線LB1來實施雷射加工時，脈衝雷射光線可能會打到多邊形鏡54的鏡541與鏡541之角部541a，在此情形下脈衝雷射光線會散射而無法照射至規定的加工區域，肇生加工損失，並且會有因脈衝雷射光線的散射而使得被加工物的品質降低之問題。
本實施形態中，具備旋轉位置檢測手段558，檢測比多邊形鏡54的鏡541與鏡541之角部541a還略微靠近箭頭A所示旋轉方向前側的位置，一旦比鏡541與鏡541之角部541a還略微靠近旋轉方向前側之位置(B)到達了第1脈衝雷射光線LB1的入射位置亦即多邊形鏡54 的第1位置54a，受光元件558b便接受由發光元件558a發光並被鏡541反射之光，並將受光訊號送至控制手段7。從受光元件558b輸入了受光訊號的控制手段7，會對光學性切換元件552施加電壓訊號。其結果，從脈衝雷射振盪器51振盪出的脈衝雷射光線LB會被引導至第2路徑551b。被引導至第2路徑551b之第2脈衝雷射光線LB2，透過方向變換鏡554b通過1/2波長板555b，藉此相對於偏光光束分離器553被偏光成S偏光。是故，被偏光成S偏光之第2脈衝雷射光線LB2，會透過方向變換鏡556b而如上述般藉由偏光光束分離器553被分歧而被引導至第3路徑551c。被引導至第3路徑551c之第2脈衝雷射光線LB2，透過方向變換鏡557被引導至上述多邊形鏡54的第2位置54b。像這樣被引導至多邊形鏡54的第2位置54b之第2脈衝雷射光線LB2，會越過旋轉中的多邊形鏡54的鏡541與鏡541之角部541a，而被引導至下一個鏡541。是故，脈衝雷射光線不會打到多邊形鏡54的鏡541與鏡541之角部541a。
如上述般，一旦將第2脈衝雷射光線LB2的1脈衝引導到多邊形鏡54的第2位置54b，控制手段7便停止對光學性切換元件552施加電壓訊號。其結果，如上述般從脈衝雷射振盪器51振盪出的脈衝雷射光線LB會被引導至第1路徑551a，被引導至第1路徑551a之第1脈衝雷射光線LB1會被引導至上述多邊形鏡54的第1位置54a。此時，多邊形鏡54是如箭頭(A)所示方向例如 以500轉/秒的旋轉速度旋轉，故第1脈衝雷射光線LB1會被引導至和上述第2脈衝雷射光線LB2的1脈衝所被引導到的鏡541相同之鏡。像這樣，依據來自旋轉位置檢測手段558的受光元件558b之受光訊號，控制手段7交互實施對光學性切換元件552之電壓訊號的停止施加與施加，藉此，脈衝雷射光線不會打到多邊形鏡54的鄰接的鏡541與鏡541之角部541a，而能分別引導10脈衝(LB-1~LB-10)至各鏡541。
如以上般，本實施形態之雷射光線照射機構5中，脈衝雷射光線不會打到旋轉中的多邊形鏡54的鄰接的鏡541與鏡541之角部541a，故會防止因脈衝雷射光線打到多邊形鏡54的鄰接的鏡541與鏡541之角部541a而發生之脈衝雷射光線的散射。是故，便能夠消弭脈衝雷射光線打到多邊形鏡54的鏡541與鏡541之角部541a，導致散射而無法照射至規定的加工區域，肇生加工損失，並且因脈衝雷射光線的散射而使得被加工物的品質降低之問題。
此外，本實施形態之雷射光線照射機構5中，脈衝雷射光線的10脈衝(LB-1~LB-10)會反覆照射至被保持於夾盤平台36之被加工物W，故藉由將夾盤平台36朝X軸方向加工饋送，便會於Y軸方向重複做燒蝕加工，因此能夠防止熔融物的回填而對身為被加工物之Low-k膜或基板等有效率地形成期望寬度之雷射加工溝。

Claims (2)

  1. 一種雷射加工裝置，具備：夾盤平台，保持被加工物；及雷射光線照射機構，對被保持於該夾盤平台之被加工物做雷射加工；該雷射加工裝置，其特徵為：該雷射光線照射機構，具備：脈衝雷射振盪器，振盪脈衝雷射光線；聚光器，將從該脈衝雷射振盪器振盪出的該脈衝雷射光線予以聚光並照射至被保持於該夾盤平台之被加工物；多邊形鏡，配設於該脈衝雷射振盪器與該聚光器之間，係複數個鏡相對於旋轉軸以同心狀配設而成，該複數個鏡令從該脈衝雷射振盪器振盪出的該脈衝雷射光線分散；及誘導手段，配設於該脈衝雷射振盪器與該多邊形鏡之間，誘導該脈衝雷射光線以避免該脈衝雷射光線照射至鄰接的鏡之角部。
  2. 如申請專利範圍第1項所述之雷射加工裝置，其中，該誘導手段，包含：光學性切換元件，將從該脈衝雷射振盪器振盪出的脈衝雷射光線選擇性地引導至第1路徑或第2路徑；偏光光束分離器，將被引導至該第1路徑或該第2路徑之脈衝雷射光線引導至配設有該多邊形鏡之第3路徑；旋轉位置檢測手段，檢測該多邊形鏡的旋轉位置；及控制手段，依據來自該旋轉位置檢測手段的檢測訊號，控制該光學性切換元件以避免該脈衝雷射光線照射至該多邊形鏡的鄰接的鏡與該鏡之角部；該第1路徑與該第2路徑，係被定位成該偏光光束分離器將被引導至該第1路徑之該脈衝雷射光線與被引導至該第2路徑之該脈衝雷射光線相距規定的間隔予以分岐。
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