TWI663681B - 靜電夾具以及製造其之方法 - Google Patents
靜電夾具以及製造其之方法 Download PDFInfo
- Publication number
- TWI663681B TWI663681B TW104104028A TW104104028A TWI663681B TW I663681 B TWI663681 B TW I663681B TW 104104028 A TW104104028 A TW 104104028A TW 104104028 A TW104104028 A TW 104104028A TW I663681 B TWI663681 B TW I663681B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- electrode
- layer
- electrostatic fixture
- electrostatic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000919 ceramic Substances 0.000 claims abstract description 54
- 239000012212 insulator Substances 0.000 claims abstract description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 239
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 21
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 239000002345 surface coating layer Substances 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 description 35
- 239000007789 gas Substances 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 20
- 238000000576 coating method Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 18
- 238000000151 deposition Methods 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 11
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 229910000833 kovar Inorganic materials 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000007736 thin film deposition technique Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-N aluminum oxygen(2-) hydrate Chemical compound O.[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 210000002304 esc Anatomy 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- -1 nickel-chrome Chemical compound 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461937135P | 2014-02-07 | 2014-02-07 | |
| US61/937,135 | 2014-02-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201545268A TW201545268A (zh) | 2015-12-01 |
| TWI663681B true TWI663681B (zh) | 2019-06-21 |
Family
ID=52544589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104104028A TWI663681B (zh) | 2014-02-07 | 2015-02-06 | 靜電夾具以及製造其之方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10497598B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3103136B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6527524B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102369706B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN107078086B (cg-RX-API-DMAC7.html) |
| SG (1) | SG10201806706VA (cg-RX-API-DMAC7.html) |
| TW (1) | TWI663681B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2015120265A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10236202B2 (en) * | 2013-11-11 | 2019-03-19 | Diablo Capital, Inc. | System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum |
| EP3103136B1 (en) | 2014-02-07 | 2021-06-23 | Entegris, Inc. | Electrostatic chuck and method of making same |
| US20160379806A1 (en) * | 2015-06-25 | 2016-12-29 | Lam Research Corporation | Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers |
| US20170211185A1 (en) * | 2016-01-22 | 2017-07-27 | Applied Materials, Inc. | Ceramic showerhead with embedded conductive layers |
| US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
| US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
| US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
| US10186400B2 (en) * | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
| US20180213608A1 (en) * | 2017-01-20 | 2018-07-26 | Applied Materials, Inc. | Electrostatic chuck with radio frequency isolated heaters |
| JP7111727B2 (ja) * | 2017-01-27 | 2022-08-02 | ビーコ インストゥルメント インク | 基板バイアスａｌｄ用電気絶縁改善チャックシステムおよび方法 |
| US10975469B2 (en) | 2017-03-17 | 2021-04-13 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| US11469084B2 (en) | 2017-09-05 | 2022-10-11 | Lam Research Corporation | High temperature RF connection with integral thermal choke |
| US11279656B2 (en) | 2017-10-27 | 2022-03-22 | Applied Materials, Inc. | Nanopowders, nanoceramic materials and methods of making and use thereof |
| KR20200089765A (ko) * | 2017-12-18 | 2020-07-27 | 엔테그리스, 아이엔씨. | 원자 층 증착에 의해 도포되는 내화학약품성 다층 코팅 |
| US11990360B2 (en) | 2018-01-31 | 2024-05-21 | Lam Research Corporation | Electrostatic chuck (ESC) pedestal voltage isolation |
| US11848177B2 (en) | 2018-02-23 | 2023-12-19 | Lam Research Corporation | Multi-plate electrostatic chucks with ceramic baseplates |
| US11086233B2 (en) * | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
| US10443126B1 (en) | 2018-04-06 | 2019-10-15 | Applied Materials, Inc. | Zone-controlled rare-earth oxide ALD and CVD coatings |
| KR102862930B1 (ko) * | 2018-06-22 | 2025-09-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 웨이퍼 프로세싱에서 웨이퍼 후면 손상을 최소화하는 방법들 |
| US11667575B2 (en) | 2018-07-18 | 2023-06-06 | Applied Materials, Inc. | Erosion resistant metal oxide coatings |
| US11183368B2 (en) | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
| US11031272B2 (en) * | 2018-11-06 | 2021-06-08 | Mikro Mesa Technology Co., Ltd. | Micro device electrostatic chuck with diffusion blocking layer |
| CN113056816B (zh) * | 2018-11-19 | 2024-11-12 | 恩特格里斯公司 | 具有电荷耗散涂层的静电卡盘 |
| US11180847B2 (en) | 2018-12-06 | 2021-11-23 | Applied Materials, Inc. | Atomic layer deposition coatings for high temperature ceramic components |
| US11673161B2 (en) * | 2019-03-11 | 2023-06-13 | Technetics Group Llc | Methods of manufacturing electrostatic chucks |
| US10858741B2 (en) | 2019-03-11 | 2020-12-08 | Applied Materials, Inc. | Plasma resistant multi-layer architecture for high aspect ratio parts |
| US11335581B2 (en) * | 2019-07-31 | 2022-05-17 | Eryn Smith | System and method for adhering a semiconductive wafer to an electrostatic carrier by adjusting relative permittivity |
| KR102790475B1 (ko) * | 2019-09-16 | 2025-04-08 | 삼성디스플레이 주식회사 | 금속 마스크, 이의 제조 방법, 및 표시 패널 제조 방법 |
| CN112553592B (zh) * | 2019-09-25 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | 一种利用ald工艺对静电吸盘进行处理的方法 |
| CN113053774A (zh) * | 2019-12-27 | 2021-06-29 | 迪科特测试科技(苏州)有限公司 | 探测装置 |
| KR102701133B1 (ko) * | 2020-03-06 | 2024-09-03 | 세메스 주식회사 | 지지 유닛 및 그를 포함하는 기판 처리 장치 |
| JP2023551725A (ja) * | 2020-12-02 | 2023-12-12 | エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，プフェフィコーン | 静電チャック用の改善されたプラズマ耐性コーティング |
| CN112652677B (zh) * | 2020-12-09 | 2023-10-27 | 晋能光伏技术有限责任公司 | 一种perc电池背面钝化工艺 |
| US11417557B2 (en) * | 2020-12-15 | 2022-08-16 | Entegris, Inc. | Spiraling polyphase electrodes for electrostatic chuck |
| US11955361B2 (en) * | 2021-04-15 | 2024-04-09 | Applied Materials, Inc. | Electrostatic chuck with mesas |
| KR102520805B1 (ko) * | 2021-05-10 | 2023-04-13 | 주식회사 템네스트 | 이종 복합재료로 이루어진 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척 |
| KR102548445B1 (ko) * | 2021-05-10 | 2023-06-28 | 부경대학교 산학협력단 | 클래드재 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척 |
| TWI829316B (zh) * | 2021-08-31 | 2024-01-11 | 日商京瓷股份有限公司 | 耐電漿積層體、其製造方法及電漿處理裝置 |
| KR102875533B1 (ko) * | 2021-10-28 | 2025-10-27 | 엔테그리스, 아이엔씨. | 유전체 층을 포함하는 상부 세라믹 층을 포함하는 정전 척, 및 관련 방법 및 구조 |
| KR102697860B1 (ko) * | 2022-02-08 | 2024-08-22 | (주)아이씨디 | 정전 장치 및 그 동작 방법 |
| US20230294208A1 (en) * | 2022-03-21 | 2023-09-21 | Applied Materials, Inc. | Electrostatic chuck with laser-machined mesas |
| WO2023191999A1 (en) * | 2022-04-01 | 2023-10-05 | Applied Materials, Inc. | Ceramic engineering by grading materials |
| JP2023170413A (ja) * | 2022-05-19 | 2023-12-01 | 新光電気工業株式会社 | セラミックス基板及びその製造方法、静電チャック、基板固定装置、半導体装置用パッケージ |
| JP2024020855A (ja) * | 2022-08-02 | 2024-02-15 | 新光電気工業株式会社 | 静電チャック、基板固定装置、ペースト |
| WO2025004883A1 (ja) * | 2023-06-29 | 2025-01-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200715464A (en) * | 2005-06-30 | 2007-04-16 | Varian Semiconductor Equipment | Clamp for use in processing semiconductor workpieces |
| US20100003510A1 (en) * | 2008-07-07 | 2010-01-07 | Shin-Etsu Chemical Co., Ltd. | Corrosion-resistant multilayer ceramic member |
| TW201120988A (en) * | 2009-08-21 | 2011-06-16 | Komico Ltd | Electrostatic chuck and method of manufacturing the same |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4004086B2 (ja) * | 1996-07-22 | 2007-11-07 | 日本発条株式会社 | 静電チャック装置 |
| JP3949763B2 (ja) | 1996-11-21 | 2007-07-25 | トーカロ株式会社 | 静電チャック部材 |
| US5909355A (en) | 1997-12-02 | 1999-06-01 | Applied Materials, Inc. | Ceramic electrostatic chuck and method of fabricating same |
| JPH11168134A (ja) * | 1997-12-03 | 1999-06-22 | Shin Etsu Chem Co Ltd | 静電吸着装置およびその製造方法 |
| JPH11260534A (ja) * | 1998-01-09 | 1999-09-24 | Ngk Insulators Ltd | 加熱装置およびその製造方法 |
| JP4082924B2 (ja) | 2002-04-16 | 2008-04-30 | キヤノンアネルバ株式会社 | 静電吸着ホルダー及び基板処理装置 |
| US7364624B2 (en) | 2003-01-17 | 2008-04-29 | Momentive Performance Materials Inc. | Wafer handling apparatus and method of manufacturing thereof |
| JP4307195B2 (ja) | 2003-09-17 | 2009-08-05 | 京セラ株式会社 | 静電チャック |
| US7663860B2 (en) * | 2003-12-05 | 2010-02-16 | Tokyo Electron Limited | Electrostatic chuck |
| US20090242544A1 (en) | 2005-10-12 | 2009-10-01 | Shin-Etsu Chemical Co., Ltd. | Wafer heating apparatus having electrostatic attraction function |
| WO2008082978A2 (en) | 2006-12-26 | 2008-07-10 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method of forming |
| TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| JP5453902B2 (ja) | 2009-04-27 | 2014-03-26 | Ｔｏｔｏ株式会社 | 静電チャックおよび静電チャックの製造方法 |
| SG10201402319QA (en) | 2009-05-15 | 2014-07-30 | Entegris Inc | Electrostatic chuck with polymer protrusions |
| US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
| TW201209957A (en) | 2010-05-28 | 2012-03-01 | Praxair Technology Inc | Substrate supports for semiconductor applications |
| JP6014587B2 (ja) | 2010-05-28 | 2016-10-25 | インテグリス・インコーポレーテッド | 高表面抵抗率の静電チャック |
| US9728429B2 (en) * | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
| CN103222043B (zh) | 2010-09-08 | 2016-10-12 | 恩特格林斯公司 | 一种高传导静电夹盘 |
| KR101974386B1 (ko) * | 2012-03-21 | 2019-05-03 | 주식회사 미코 | 정전척 |
| EP3103136B1 (en) | 2014-02-07 | 2021-06-23 | Entegris, Inc. | Electrostatic chuck and method of making same |
-
2015
- 2015-02-06 EP EP15705762.1A patent/EP3103136B1/en active Active
- 2015-02-06 WO PCT/US2015/014810 patent/WO2015120265A1/en not_active Ceased
- 2015-02-06 SG SG10201806706VA patent/SG10201806706VA/en unknown
- 2015-02-06 US US15/111,591 patent/US10497598B2/en active Active
- 2015-02-06 KR KR1020167021232A patent/KR102369706B1/ko active Active
- 2015-02-06 JP JP2016548231A patent/JP6527524B2/ja active Active
- 2015-02-06 TW TW104104028A patent/TWI663681B/zh active
- 2015-02-06 CN CN201580007196.XA patent/CN107078086B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200715464A (en) * | 2005-06-30 | 2007-04-16 | Varian Semiconductor Equipment | Clamp for use in processing semiconductor workpieces |
| US20100003510A1 (en) * | 2008-07-07 | 2010-01-07 | Shin-Etsu Chemical Co., Ltd. | Corrosion-resistant multilayer ceramic member |
| TW201120988A (en) * | 2009-08-21 | 2011-06-16 | Komico Ltd | Electrostatic chuck and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107078086B (zh) | 2021-01-26 |
| JP2017507484A (ja) | 2017-03-16 |
| JP6527524B2 (ja) | 2019-06-05 |
| CN107078086A (zh) | 2017-08-18 |
| KR20160118259A (ko) | 2016-10-11 |
| EP3103136A1 (en) | 2016-12-14 |
| SG10201806706VA (en) | 2018-09-27 |
| EP3103136B1 (en) | 2021-06-23 |
| US20160336210A1 (en) | 2016-11-17 |
| US10497598B2 (en) | 2019-12-03 |
| WO2015120265A1 (en) | 2015-08-13 |
| KR102369706B1 (ko) | 2022-03-04 |
| TW201545268A (zh) | 2015-12-01 |
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