TWI655670B - 顯示裝置製造用相偏移光罩基底、顯示裝置製造用相偏移光罩及其製造方法、以及顯示裝置之製造方法 - Google Patents
顯示裝置製造用相偏移光罩基底、顯示裝置製造用相偏移光罩及其製造方法、以及顯示裝置之製造方法 Download PDFInfo
- Publication number
- TWI655670B TWI655670B TW106134106A TW106134106A TWI655670B TW I655670 B TWI655670 B TW I655670B TW 106134106 A TW106134106 A TW 106134106A TW 106134106 A TW106134106 A TW 106134106A TW I655670 B TWI655670 B TW I655670B
- Authority
- TW
- Taiwan
- Prior art keywords
- phase shift
- film
- phase
- shift mask
- less
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 587
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 128
- 238000000034 method Methods 0.000 title description 46
- 239000000758 substrate Substances 0.000 claims abstract description 295
- 239000010410 layer Substances 0.000 claims abstract description 292
- 239000000463 material Substances 0.000 claims abstract description 241
- 238000002834 transmittance Methods 0.000 claims abstract description 135
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- 230000003287 optical effect Effects 0.000 claims abstract description 70
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 68
- 150000005309 metal halides Chemical class 0.000 claims abstract description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 55
- 230000008859 change Effects 0.000 claims abstract description 42
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 28
- 239000002356 single layer Substances 0.000 claims abstract description 17
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 8
- 239000011651 chromium Substances 0.000 claims description 152
- 229910052804 chromium Inorganic materials 0.000 claims description 146
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 143
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 69
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 62
- -1 nitrogen metal halide Chemical class 0.000 claims description 23
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims description 20
- 150000004767 nitrides Chemical group 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 12
- 239000001301 oxygen Substances 0.000 abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 abstract description 12
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 578
- 230000000052 comparative effect Effects 0.000 description 62
- 239000007789 gas Substances 0.000 description 53
- 238000005259 measurement Methods 0.000 description 50
- 230000000694 effects Effects 0.000 description 35
- 238000004544 sputter deposition Methods 0.000 description 33
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 description 25
- 238000012546 transfer Methods 0.000 description 25
- 238000009826 distribution Methods 0.000 description 24
- 238000005477 sputtering target Methods 0.000 description 24
- 238000005530 etching Methods 0.000 description 21
- 238000001039 wet etching Methods 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- 238000000411 transmission spectrum Methods 0.000 description 13
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 11
- 238000007689 inspection Methods 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 229910002091 carbon monoxide Inorganic materials 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000005546 reactive sputtering Methods 0.000 description 9
- 238000000985 reflectance spectrum Methods 0.000 description 9
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 8
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 7
- 239000012935 ammoniumperoxodisulfate Substances 0.000 description 7
- 229910002090 carbon oxide Inorganic materials 0.000 description 7
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 7
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 229910003470 tongbaite Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- NMARTRYAYDQTJI-UHFFFAOYSA-N [Cr].[C]=O Chemical compound [Cr].[C]=O NMARTRYAYDQTJI-UHFFFAOYSA-N 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- MWRJCEDXZKNABM-UHFFFAOYSA-N germanium tungsten Chemical compound [Ge].[W] MWRJCEDXZKNABM-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- GKZMHUBVOIMPHW-UHFFFAOYSA-N [N]=O.[Cr] Chemical compound [N]=O.[Cr] GKZMHUBVOIMPHW-UHFFFAOYSA-N 0.000 description 3
- 150000001845 chromium compounds Chemical class 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 230000004313 glare Effects 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910039444 MoC Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- CUPFNGOKRMWUOO-UHFFFAOYSA-N hydron;difluoride Chemical compound F.F CUPFNGOKRMWUOO-UHFFFAOYSA-N 0.000 description 2
- 239000005001 laminate film Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- FXNGWBDIVIGISM-UHFFFAOYSA-N methylidynechromium Chemical compound [Cr]#[C] FXNGWBDIVIGISM-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- HQZPMWBCDLCGCL-UHFFFAOYSA-N tantalum telluride Chemical compound [Te]=[Ta]=[Te] HQZPMWBCDLCGCL-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013242209A JP6266322B2 (ja) | 2013-11-22 | 2013-11-22 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法 |
| JP??2013-242209 | 2013-11-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201801148A TW201801148A (zh) | 2018-01-01 |
| TWI655670B true TWI655670B (zh) | 2019-04-01 |
Family
ID=53378379
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103140505A TWI591422B (zh) | 2013-11-22 | 2014-11-21 | 顯示裝置製造用相偏移光罩基底、顯示裝置製造用相偏移光罩及其製造方法、以及顯示裝置之製造方法 |
| TW106134106A TWI655670B (zh) | 2013-11-22 | 2014-11-21 | 顯示裝置製造用相偏移光罩基底、顯示裝置製造用相偏移光罩及其製造方法、以及顯示裝置之製造方法 |
| TW106114900A TWI605299B (zh) | 2013-11-22 | 2014-11-21 | 顯示裝置製造用相偏移光罩基底、顯示裝置製造用相偏移光罩及其製造方法、以及顯示裝置之製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103140505A TWI591422B (zh) | 2013-11-22 | 2014-11-21 | 顯示裝置製造用相偏移光罩基底、顯示裝置製造用相偏移光罩及其製造方法、以及顯示裝置之製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106114900A TWI605299B (zh) | 2013-11-22 | 2014-11-21 | 顯示裝置製造用相偏移光罩基底、顯示裝置製造用相偏移光罩及其製造方法、以及顯示裝置之製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6266322B2 (enExample) |
| KR (2) | KR20150059610A (enExample) |
| TW (3) | TWI591422B (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
| JP6726553B2 (ja) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | フォトマスクの製造方法、及び表示装置の製造方法 |
| JP6626813B2 (ja) * | 2016-03-16 | 2019-12-25 | エスアンドエス テック カンパニー リミテッド | 位相反転ブランクマスク及びフォトマスク |
| JP6812236B2 (ja) * | 2016-12-27 | 2021-01-13 | Hoya株式会社 | 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| CN108319104B (zh) * | 2017-01-16 | 2023-05-02 | Hoya株式会社 | 显示装置制造用相移掩模坯料、显示装置制造用相移掩模的制造方法及显示装置的制造方法 |
| CN108319103B (zh) * | 2017-01-16 | 2023-11-28 | Hoya株式会社 | 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法 |
| JP6983641B2 (ja) * | 2017-01-16 | 2021-12-17 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP7176843B2 (ja) * | 2017-01-18 | 2022-11-22 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| KR102568807B1 (ko) * | 2017-03-28 | 2023-08-21 | 호야 가부시키가이샤 | 위상 시프트 마스크 블랭크 및 그것을 사용한 위상 시프트 마스크의 제조 방법, 그리고 패턴 전사 방법 |
| WO2019086643A1 (en) | 2017-11-06 | 2019-05-09 | Asml Netherlands B.V. | Metal-silicide-nitridation for stress reduction |
| JP7037919B2 (ja) * | 2017-11-14 | 2022-03-17 | アルバック成膜株式会社 | マスクブランク、ハーフトーンマスクおよびその製造方法 |
| CN109960105B (zh) * | 2017-12-26 | 2024-06-18 | Hoya株式会社 | 光掩模坯料及光掩模的制造方法、显示装置的制造方法 |
| JP2018173644A (ja) * | 2018-05-31 | 2018-11-08 | Hoya株式会社 | 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP6927177B2 (ja) * | 2018-09-26 | 2021-08-25 | 信越化学工業株式会社 | 位相シフト型フォトマスクブランク及び位相シフト型フォトマスク |
| JP6840807B2 (ja) * | 2019-09-10 | 2021-03-10 | Hoya株式会社 | フォトマスクの設計方法および製造方法、並びに表示装置の製造方法 |
| JP7731678B2 (ja) | 2020-03-16 | 2025-09-01 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
| US12366798B2 (en) * | 2021-06-07 | 2025-07-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography mask and methods |
| JP7346527B2 (ja) * | 2021-11-25 | 2023-09-19 | Hoya株式会社 | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法 |
| JP2023108276A (ja) * | 2022-01-25 | 2023-08-04 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、及び表示装置の製造方法 |
| US20230317452A1 (en) * | 2022-03-31 | 2023-10-05 | Nanya Technology Corporation | Hard mask structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1174613A (zh) * | 1995-10-24 | 1998-02-25 | 阿尔贝克成膜株式会社 | 移相掩模及其制造方法 |
| US20040086788A1 (en) * | 2002-04-26 | 2004-05-06 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| CN101075085A (zh) * | 2002-04-30 | 2007-11-21 | 松下电器产业株式会社 | 图案形成方法 |
| TW201030472A (en) * | 2008-09-18 | 2010-08-16 | Nikon Corp | Optical system, exposure apparatus, and method of manufacturing electronic device |
| TW201250375A (en) * | 2011-04-22 | 2012-12-16 | S&S Tech Co Ltd | Blankmask and photomask |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3727331B2 (ja) * | 2002-04-30 | 2005-12-14 | 松下電器産業株式会社 | パターン形成方法 |
| JP4249509B2 (ja) * | 2003-02-27 | 2009-04-02 | 大日本印刷株式会社 | 位相シフトレチクルの製造方法および位相シフター欠陥修正方法 |
| KR101143005B1 (ko) * | 2004-12-14 | 2012-05-08 | 삼성전자주식회사 | 마스크 및 이를 이용한 반도체 소자의 제조 방법 및 박막트랜지스터 표시판의 제조 방법 |
| JP2007271696A (ja) * | 2006-03-30 | 2007-10-18 | Hoya Corp | グレートーンマスクブランク及びフォトマスク |
| JP4840879B2 (ja) * | 2007-08-10 | 2011-12-21 | エスアンドエス テック カンパニー リミテッド | グレートーンブランクマスク及びグレートーンフォトマスク並びにそれらの製造方法 |
| JP4849276B2 (ja) * | 2008-08-15 | 2012-01-11 | 信越化学工業株式会社 | グレートーンマスクブランク、グレートーンマスク、及び製品加工標識又は製品情報標識の形成方法 |
| TWI440964B (zh) * | 2009-01-27 | 2014-06-11 | Hoya Corp | 多調式光罩、多調式光罩之製造方法及圖案轉印方法 |
| JP5662032B2 (ja) * | 2010-02-05 | 2015-01-28 | アルバック成膜株式会社 | マスクブランクス及びハーフトーンマスク |
| TWI461833B (zh) * | 2010-03-15 | 2014-11-21 | Hoya Corp | 多調式光罩、多調式光罩之製造方法及圖案轉印方法 |
| US9104112B2 (en) * | 2010-09-30 | 2015-08-11 | Hoya Corporation | Mask blank, method of manufacturing the same, and transfer mask |
| JP5286455B1 (ja) * | 2012-03-23 | 2013-09-11 | Ｈｏｙａ株式会社 | マスクブランク、転写用マスクおよびこれらの製造方法 |
| JP5538513B2 (ja) * | 2012-12-12 | 2014-07-02 | Ｈｏｙａ株式会社 | 多階調フォトマスク、パターン転写方法及び薄膜トランジスタの製造方法 |
-
2013
- 2013-11-22 JP JP2013242209A patent/JP6266322B2/ja active Active
-
2014
- 2014-11-19 KR KR1020140161566A patent/KR20150059610A/ko not_active Ceased
- 2014-11-21 TW TW103140505A patent/TWI591422B/zh active
- 2014-11-21 TW TW106134106A patent/TWI655670B/zh active
- 2014-11-21 TW TW106114900A patent/TWI605299B/zh active
-
2017
- 2017-10-17 KR KR1020170134755A patent/KR101935171B1/ko active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1174613A (zh) * | 1995-10-24 | 1998-02-25 | 阿尔贝克成膜株式会社 | 移相掩模及其制造方法 |
| US20040086788A1 (en) * | 2002-04-26 | 2004-05-06 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| CN101075085A (zh) * | 2002-04-30 | 2007-11-21 | 松下电器产业株式会社 | 图案形成方法 |
| TW201030472A (en) * | 2008-09-18 | 2010-08-16 | Nikon Corp | Optical system, exposure apparatus, and method of manufacturing electronic device |
| TW201250375A (en) * | 2011-04-22 | 2012-12-16 | S&S Tech Co Ltd | Blankmask and photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI605299B (zh) | 2017-11-11 |
| JP6266322B2 (ja) | 2018-01-24 |
| JP2015102633A (ja) | 2015-06-04 |
| TW201801148A (zh) | 2018-01-01 |
| KR20170119324A (ko) | 2017-10-26 |
| KR101935171B1 (ko) | 2019-01-03 |
| TWI591422B (zh) | 2017-07-11 |
| TW201527866A (zh) | 2015-07-16 |
| KR20150059610A (ko) | 2015-06-01 |
| TW201727354A (zh) | 2017-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI655670B (zh) | 顯示裝置製造用相偏移光罩基底、顯示裝置製造用相偏移光罩及其製造方法、以及顯示裝置之製造方法 | |
| CN1900819B (zh) | 光掩模坯、光掩模及其制作方法 | |
| CN103809369B (zh) | 光掩模坯、光掩模及其制作方法 | |
| TWI461830B (zh) | 相位偏移光罩母模、相位偏移光罩及相位偏移光罩母模之製造方法 | |
| TWI778231B (zh) | 遮罩基底、相位轉移遮罩以及半導體元件之製造方法 | |
| KR20090057316A (ko) | 포토마스크 블랭크, 포토마스크 및 포토마스크를 이용한 패턴 전사 방법 | |
| JP7095157B2 (ja) | 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 | |
| TWI698702B (zh) | 相移光罩基底及使用其之相移光罩之製造方法、與顯示裝置之製造方法 | |
| CN111801618A (zh) | 掩模坯料、相移掩模及半导体器件的制造方法 | |
| JP7176843B2 (ja) | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 | |
| TW201707956A (zh) | 相偏移光罩基底及使用其之相偏移光罩之製造方法、以及顯示裝置之製造方法 | |
| TWI758382B (zh) | 相移光罩基底、相移光罩之製造方法、及顯示裝置之製造方法 | |
| US20230314929A1 (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| JP6532919B2 (ja) | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク、及び表示装置の製造方法 | |
| JP4784983B2 (ja) | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク | |
| JP2018165817A (ja) | 位相シフトマスクブランク及びそれを用いた位相シフトマスクの製造方法、並びにパターン転写方法 | |
| CN108319104B (zh) | 显示装置制造用相移掩模坯料、显示装置制造用相移掩模的制造方法及显示装置的制造方法 | |
| JP2003005349A (ja) | ハーフトーン型位相シフトマスク用ブランクおよびハーフトーン型位相シフトマスク |