TWI655326B - 晶圓以及晶圓的製造方法 - Google Patents

晶圓以及晶圓的製造方法 Download PDF

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Publication number
TWI655326B
TWI655326B TW106127277A TW106127277A TWI655326B TW I655326 B TWI655326 B TW I655326B TW 106127277 A TW106127277 A TW 106127277A TW 106127277 A TW106127277 A TW 106127277A TW I655326 B TWI655326 B TW I655326B
Authority
TW
Taiwan
Prior art keywords
film layer
wafer
thin film
oxide film
substrate
Prior art date
Application number
TW106127277A
Other languages
English (en)
Chinese (zh)
Other versions
TW201823531A (zh
Inventor
金寅謙
金在宣
柳炅旼
張圭逸
Original Assignee
南韓商愛思開矽得榮股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160102268A external-priority patent/KR20180017833A/ko
Priority claimed from KR1020160102269A external-priority patent/KR101962174B1/ko
Priority claimed from KR1020160104060A external-priority patent/KR20180019853A/ko
Application filed by 南韓商愛思開矽得榮股份有限公司 filed Critical 南韓商愛思開矽得榮股份有限公司
Publication of TW201823531A publication Critical patent/TW201823531A/zh
Application granted granted Critical
Publication of TWI655326B publication Critical patent/TWI655326B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
TW106127277A 2016-08-11 2017-08-11 晶圓以及晶圓的製造方法 TWI655326B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
??10-2016-0102269 2016-08-11
??10-2016-0102268 2016-08-11
KR1020160102268A KR20180017833A (ko) 2016-08-11 2016-08-11 웨이퍼 제조방법
KR1020160102269A KR101962174B1 (ko) 2016-08-11 2016-08-11 웨이퍼 제조방법
KR1020160104060A KR20180019853A (ko) 2016-08-17 2016-08-17 웨이퍼
??10-2016-0104060 2016-08-17

Publications (2)

Publication Number Publication Date
TW201823531A TW201823531A (zh) 2018-07-01
TWI655326B true TWI655326B (zh) 2019-04-01

Family

ID=61162293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106127277A TWI655326B (zh) 2016-08-11 2017-08-11 晶圓以及晶圓的製造方法

Country Status (2)

Country Link
TW (1) TWI655326B (ko)
WO (1) WO2018030666A1 (ko)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344796A (en) * 1992-10-19 1994-09-06 Samsung Electronics Co., Ltd. Method for making polycrystalline silicon thin film
CN1632945A (zh) * 2001-12-31 2005-06-29 台湾茂矽电子股份有限公司 非挥发性存储器结构及其制造方法
TW201539651A (zh) * 2014-01-23 2015-10-16 Sunedison Semiconductor Ltd 高電阻率絕緣層上矽（ｓｏｉ）晶圓及其製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100270620B1 (ko) * 1992-10-19 2000-12-01 윤종용 다결정 실리콘 박막의 제조방법
US5587696A (en) * 1995-06-28 1996-12-24 Taiwan Semiconductor Manufacturing Company Ltd. High resistance polysilicon resistor for integrated circuits and method of fabrication thereof
KR101629193B1 (ko) * 2008-06-26 2016-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작 방법
KR101051570B1 (ko) * 2009-01-29 2011-07-22 주식회사 엘지실트론 선택적 에피택시를 이용하여 휨이 제어된 에피택셜 웨이퍼 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344796A (en) * 1992-10-19 1994-09-06 Samsung Electronics Co., Ltd. Method for making polycrystalline silicon thin film
CN1632945A (zh) * 2001-12-31 2005-06-29 台湾茂矽电子股份有限公司 非挥发性存储器结构及其制造方法
TW201539651A (zh) * 2014-01-23 2015-10-16 Sunedison Semiconductor Ltd 高電阻率絕緣層上矽（ｓｏｉ）晶圓及其製造方法

Also Published As

Publication number Publication date
TW201823531A (zh) 2018-07-01
WO2018030666A1 (ko) 2018-02-15

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