TWI655045B - 圖案化基板的斷開裝置 - Google Patents

圖案化基板的斷開裝置 Download PDF

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Publication number
TWI655045B
TWI655045B TW104122532A TW104122532A TWI655045B TW I655045 B TWI655045 B TW I655045B TW 104122532 A TW104122532 A TW 104122532A TW 104122532 A TW104122532 A TW 104122532A TW I655045 B TWI655045 B TW I655045B
Authority
TW
Taiwan
Prior art keywords
disconnection
patterned substrate
starting point
disconnecting
substrate
Prior art date
Application number
TW104122532A
Other languages
English (en)
Chinese (zh)
Other versions
TW201611928A (en
Inventor
武田真和
宮川學
Original Assignee
日商三星鑽石工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三星鑽石工業股份有限公司 filed Critical 日商三星鑽石工業股份有限公司
Publication of TW201611928A publication Critical patent/TW201611928A/zh
Application granted granted Critical
Publication of TWI655045B publication Critical patent/TWI655045B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Laser Beam Processing (AREA)
TW104122532A 2014-09-30 2015-07-13 圖案化基板的斷開裝置 TWI655045B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-200115 2014-09-30
JP2014200115A JP6428112B2 (ja) 2014-09-30 2014-09-30 パターニング基板のブレイク装置

Publications (2)

Publication Number Publication Date
TW201611928A TW201611928A (en) 2016-04-01
TWI655045B true TWI655045B (zh) 2019-04-01

Family

ID=55607764

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104122532A TWI655045B (zh) 2014-09-30 2015-07-13 圖案化基板的斷開裝置

Country Status (4)

Country Link
JP (1) JP6428112B2 (ja)
KR (1) KR20160038713A (ja)
CN (1) CN105470198B (ja)
TW (1) TWI655045B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6888809B2 (ja) * 2017-03-30 2021-06-16 三星ダイヤモンド工業株式会社 金属膜付き脆性材料基板の分断方法並びに分断装置
JP6888808B2 (ja) * 2017-03-30 2021-06-16 三星ダイヤモンド工業株式会社 樹脂層付き脆性材料基板の分断方法並びに分断装置
JP7370902B2 (ja) 2020-02-28 2023-10-30 株式会社ディスコ クラック検出方法
WO2023176068A1 (ja) * 2022-03-16 2023-09-21 ナルックス株式会社 マイクロレンズ及びマイクロレンズアレイの製造方法
CN115592257B (zh) * 2022-12-13 2023-04-18 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种从激光改质后的晶体上剥离晶片的机械剥离装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003334675A (ja) * 2002-03-12 2003-11-25 Hamamatsu Photonics Kk 加工対象物切断方法
JP2006173520A (ja) * 2004-12-20 2006-06-29 Canon Inc レーザ割断方法および該方法により割断可能な被割断部材
JP2011165766A (ja) * 2010-02-05 2011-08-25 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
JP2013149932A (ja) * 2011-12-20 2013-08-01 Nitto Denko Corp 基板小片化方法およびこれを用いた基板小片化装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100442446C (zh) * 2004-02-27 2008-12-10 东京毅力科创株式会社 半导体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003334675A (ja) * 2002-03-12 2003-11-25 Hamamatsu Photonics Kk 加工対象物切断方法
JP2006173520A (ja) * 2004-12-20 2006-06-29 Canon Inc レーザ割断方法および該方法により割断可能な被割断部材
JP2011165766A (ja) * 2010-02-05 2011-08-25 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
JP2013149932A (ja) * 2011-12-20 2013-08-01 Nitto Denko Corp 基板小片化方法およびこれを用いた基板小片化装置

Also Published As

Publication number Publication date
JP6428112B2 (ja) 2018-11-28
JP2016068392A (ja) 2016-05-09
CN105470198B (zh) 2020-11-24
TW201611928A (en) 2016-04-01
CN105470198A (zh) 2016-04-06
KR20160038713A (ko) 2016-04-07

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MM4A Annulment or lapse of patent due to non-payment of fees