TWI648781B - 在有機化合物氣體環境中之含銅層的中性射束蝕刻 - Google Patents

在有機化合物氣體環境中之含銅層的中性射束蝕刻 Download PDF

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TWI648781B
TWI648781B TW104120679A TW104120679A TWI648781B TW I648781 B TWI648781 B TW I648781B TW 104120679 A TW104120679 A TW 104120679A TW 104120679 A TW104120679 A TW 104120679A TW I648781 B TWI648781 B TW I648781B
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copper
containing layer
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立 陳
奧德恩 盧德維克森
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東京威力科創股份有限公司
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Abstract

一種用於製造積體電路之乾蝕刻純Cu及含Cu層的方法和裝置。本發明使用具高動能之O原子的定向射束以氧化Cu及含Cu層,且有機化合物蝕刻劑與該氧化的Cu反應以形成揮發性的含Cu蝕刻產物。本發明允許根據圖案化的硬遮罩或光阻之純Cu及含Cu層的低溫、非等向性蝕刻。

Description

在有機化合物氣體環境中之含銅層的中性射束蝕刻
本發明關於半導體處理的領域,且更具體而言,關於一種使用於積體電路中之純Cu及含Cu層的非等向性蝕刻及圖案化的方法和裝置。
銅(Cu)在各種半導體應用中新興成為金屬的選擇。較低電阻率、加上改善的電移性能及增加的應力遷移抗性係重要的材料特性,其使Cu比鋁(Al)在互連線路及接觸窗上的使用更有利。較低的電阻係關鍵的,因為其允許訊號藉由減少RC時間的延遲而較快速地移動。電移(一個在Al線路中常見的可靠性問題)之優異抗性意味著Cu可處理較高的功率密度。使用Cu而非Al的一個同等重要的好處係對於Cu金屬化方法的製造成本可較低,這是由於新的處理方法減少製造步驟的數目及緩和對於一些最困難步驟的需求。
非等向性處理基板的能力允許在具側壁之精確定義的位置上產生積體電路特徵部,該等側壁係基本上垂直屏蔽的覆蓋層之表面。引入Cu進入多級金屬化結構需要新的對於Cu圖案化之處理方法。因為Cu係難以乾蝕刻,所以對於Cu圖案化已發展新的處理方法。
金屬鑲嵌方法係基於蝕刻在介電材料內的特徵部、以Cu金屬填充該等特徵部、及藉由化學機械研磨(CMP)平坦化上表面。雙重金屬鑲嵌方法整合接觸窗及互連線路兩者為一單一處理方法。然而,Cu CMP技術係具有挑戰性且其難以定義極精細的特徵部。此外,CMP受限於刮痕、剝離、凹陷及腐蝕之產量減少的問題。
金屬鑲嵌方法的替代方式係Cu層的圖案化蝕刻。圖案化的蝕刻處理包含Cu層在基板上的沉積、覆蓋於含Cu層之圖案化的硬遮罩或光阻之使用、使用活性離子蝕刻(RIE)處理之Cu層的圖案化蝕刻、及覆蓋於圖案化之含Cu層的介電材料之的沉積。Cu的圖案化蝕刻可具有優於金屬鑲嵌處理的優點,因為與使阻障層材料及Cu金屬在介電膜內適當地填充小特徵部開口相比,蝕刻精細的Cu圖案且接著在Cu圖案之上沉積介電層係較容易的。
使用RIE處理的圖案化蝕刻的特徵是相對地低壓及高離子轟擊能量。雖然需要離子轟擊以達到蝕刻非等向性之期望程度,離子轟擊係亦造成底層微結構的二次損壞。當半導體元件已變得逐漸更整合且新的先進材料(諸如銅及低k介電材料)已引進以增進電路特性時,由生產處理造成的損壞呈現逐漸嚴重的問題。損壞形成的首要原因基本上係高能粒子(諸如離子及UV光子)從電漿環境入射至基板表面。
移除Cu層的主要蝕刻劑傳統上係在氣體混合物(包含氬氣(Ar))中的含氯氣體。使用氯電漿之純Cu層及高Cu含量的含Cu層的移除,本質上包含藉由電漿中高能離子物理濺鍍低揮發性的CuClx 表面層。當使用此方法時Cu移除速率係非常低,且另一個缺點係濺鍍的CuClx 覆蓋腔室側壁且因此需要週期性清潔蝕刻腔室。一個同等嚴重的問題係遭遇於當高深寬比的特徵部係在氯電漿中蝕刻且濺鍍的CuClx 產物在特徵部的側壁上再沉積時,該處物理濺鍍的效果係被減低。
當上述基於氯的蝕刻製程係於升溫(>200°C)下執行以增加反應的含Cu層之揮發性時,腐蝕可由於表面上累積的CuClx 蝕刻殘留物而發生。若此等殘留物未藉由蝕刻後的清潔步驟移除,該等殘留物甚至在保護層塗佈於蝕刻的特徵部之後可造成持續的Cu腐蝕。
其他能量來源已被建議以增加蝕刻速率。這些方法包含曝露蝕刻的表面於UV或IR光源以加速CuClx 從蝕刻表面的解吸附。然而,此等方法對於大基板的半導體成批處理係不實際的,這是由於差的蝕刻均勻性、高成本與增加的設備複雜性、及可靠性問題。
因此,期望發展一種使用電漿的半導體製造中非等向性蝕刻的方法,該電漿係實質上無高能離子及光子粒子。在先前技術中通常需要該等粒子以使用原子氧電漿達成非等向性蝕刻,但該等粒子對底層基板造成二次損壞。而且,反應產物應為高揮發性且容易從蝕刻的基板移除。此外,當使用傳統的氯化學品蝕刻含Cu層時所遭遇的上述限制顯示:在半導體製造中需要新的低溫乾蝕刻方法,其使用不包含基於氯之反應物的化學方法。
本發明的目的係提供使用於積體電路之純Cu層及含Cu層的非等向性乾蝕刻的方法和裝置。
上述及其他目標根據本發明藉由提供方法及裝置加以達到,該方法及裝置使用高動能(過熱)中性O原子之定向射束以非等向性地氧化Cu層,且包含有機化合物氣體(諸如CH3 COOH)的蝕刻氣體與氧化的Cu層輕易地反應以形成揮發性的含Cu蝕刻產物。O原子射束的高定向性允許根據圖案化的硬遮罩或光阻之Cu層的非等向性蝕刻。
現參照圖示,其中類似的參考數字在數個視圖中指定相同或相對應的部件。
總括而言,本發明涉及用於在製造積體電路中蝕刻純Cu及含Cu層的方法和裝置。該方法使用高動能O原子的定向射束以氧化Cu層,及使用蝕刻劑,當其與氧化的Cu層反應時形成揮發性的含Cu蝕刻產物。
重要地,蝕刻劑與特徵部側壁上之未氧化的Cu非常緩慢地反應,但在低溫下與氧化的Cu表面輕易地反應。因此,為了達成非等向性蝕刻且避免蝕刻特徵部的底切,蝕刻特徵部之垂直側壁上的Cu氧化速率必須很大程度地慢於水平表面上的Cu氧化速率。此可使用定向性的O原子射束達成。
定向射束較佳地係中性O原子的過熱射束,該等中性O原子具有高動能且可從基板法線低發散地產生,因此允許屏蔽的結構以較少的在電漿製程中常見的離子損壞和電荷聚集之問題的方式生產。
一般而言,過熱原子射束包含中性原子,與藉由傳統輝光放電裝置(諸如電漿灰化器和濺射蝕刻裝置)產生的熱化原子(Ek ~ 0.05 eV)相比該等中性原子具有高動能(Ek ≥ l eV)。過熱原子射束的動能可高達數百eV。
使用過熱O原子射束以氧化和蝕刻膜,已顯示導致降低的離子轟擊損壞及電荷引起的損壞,該損壞係通常於電漿蝕刻製程期間(諸如反應性離子蝕刻(RIE))被觀察到。例如:過熱O原子在半導體製造中已被使用於非等向性蝕刻,尤其是在光阻剝離和多層微影應用的領域中,其中該過熱O原子對底基板幾乎沒有或沒有二次損壞。
Koontz和Cross在標題為“Method for anisotropic etching in the manufacture of semiconductor devices”的美國專利第5,271,800號中揭露使用過熱原子氧的射束之烴聚合物塗層之非等向性蝕刻的一種方法,以在半導體晶圓上產生期望的圖案。該過熱射束具有在約0.2 eV至20 eV範圍之間的動能,且係使用連續的光學放電雷射產生。
在本發明中,使用中性O原子之過熱射束以氧化Cu層及含Cu層,且後續使該等氧化的層與蝕刻劑反應以形成含Cu蝕刻產物之操作,允許在低基板溫度下的非等向性蝕刻。在一個實施例中,O原子的過熱射束係在與處理(蝕刻)腔室分開的一個腔室中產生,且當該射束進入處理腔室時,其僅包含中性O原子。或者,O原子射束係在處理腔室內部產生。蝕刻劑係使用噴發源引入處理腔室,且係因此在與氧化的Cu層反應之前未曝露於可導致蝕刻劑之有害分解的電漿源。
圖1係根據本發明之用於蝕刻含Cu層的流程圖。步驟100提供具有含Cu層的一表面以在處理腔室中被蝕刻。在步驟102中,過熱氧原子的射束係加以產生,其係可非等向性地氧化該含Cu層。中性O原子的射束在步驟104中係曝露至該含Cu層,且在步驟106中形成氧化的含Cu層。可與該氧化的含Cu層反應之蝕刻劑係於步驟108中引進處理腔室。在步驟110中揮發性的含Cu蝕刻產物係由氧化的含Cu層與蝕刻劑反應而加以形成,且在步驟112中從該含Cu層移除。蝕刻產物從蝕刻表面的解吸附係由高能O原子之表面轟擊加以輔助。含Cu層係曝露於O原子射束和蝕刻氣體一時間週期,該時間週期允許期望之含Cu層的蝕刻。
圖2A-2D顯示根據本發明之含Cu層的非等向性蝕刻的橫剖面示意圖。圖2A顯示部分完成的積體電路。區塊200包含構成此結構的基板210、含Cu層220、及硬遮罩或光阻材料230。為了達成含Cu層的非等向性蝕刻,覆蓋含Cu層的光阻材料係需要耐受過熱O原子的射束。此光阻材料的例子係含聚矽氧烷的光阻,該等光阻係在遮罩覆蓋物的存在下使用電子射束曝露而加以處理。圖2A中的區塊200係使用此技術領域之人士所熟習之傳統圖案化的方法加以處理以產生圖2B中的圖案。根據本發明圖2B中的結構之進一步非等向性的蝕刻係蝕刻該含Cu層220,且同時保持由光阻圖案230’定義之該結構的垂直幾何結構,形成顯示於圖2C中的結構。如同此技術領域中習知的連續處理,移除剩餘的光阻圖案230’,產生顯示於圖2D中之圖案化的Cu結構220’。
圖3顯示根據本發明之含Cu層的非等向性蝕刻的橫剖面示意圖。圖3示意性地說明允許含Cu層的非等向性蝕刻之蝕刻過程的特徵。區塊300顯示部分完成的積體電路,其包含覆蓋基板320的含Cu層310及覆蓋含Cu層310的光阻圖案330。圖3中之結構的非等向性蝕刻移除含Cu層310,且同時保持由光阻圖案330定義之結構的垂直幾何結構。
過熱射束中的中性O原子係示意性地由圖3中的箭號340表示。具有從基板法線低發散度之過熱O原子的射束,係使用接近垂直的箭號加以描述。O原子的定向性和高動能致使從垂直表面(側壁)350的彈性前向散射,且因而造成側壁氧化的低可能性。換句話說,側壁上O原子的滯留時間係太短,且在側壁法線方向上的動能係不足以造成側壁350的氧化。相比之下,衝擊水平表面的O原子具有足夠的動能及夠長的滯留時間以形成氧化的Cu層360。含蝕刻劑370的蝕刻氣體係使用噴發噴嘴引進與O原子源分開的蝕刻腔室,且蝕刻劑370與區塊300的交互作用因而為等向性的。蝕刻劑370係被選擇不與側壁350上未氧化的Cu反應。
相比之下,當蝕刻劑370吸附在該氧化的Cu層360上形成吸附的蝕刻劑380時,該吸附的蝕刻劑380即使在低溫仍與該氧化的Cu層自發性地反應。除了曝露於蝕刻劑370之外,該水平表面係處於持續高能O原子340轟擊,其中,該高能的O原子340轟擊除了氧化水平表面,進一步輔助蝕刻產物390從表面的解吸附及允許在低溫下含Cu層的蝕刻。
O原子的動能影響水平表面的氧化。當具有高動能的O原子與水平表面相互作用時,O原子穿透表面層,當內嵌於表面層時釋放其動能(變為熱化的),且因而氧化表面層。若該動能係低於某臨限能,該O原子係更可能「反彈」而不變成熱化的,而此可造成不期望的側壁氧化與側壁蝕刻。
在本發明中允許含Cu層之期望蝕刻的製程條件可由直接實驗及/或實驗設計(DOE)加以決定。例如:可調整的製程參數可包含在過熱射束中之O原子的動能、基板溫度、製程壓力、製程氣體的選擇及該製程氣體的相對氣體流率。
蝕刻劑氣體較佳係有機化合物氣體。對有機化合物而言,較佳使用一種有機化合物,其以氣體供應或藉由加熱變成氣體狀態而供應至維持在真空狀態的電漿處理系統。通常,有機酸係加以使用。對有機酸而言,較佳使用由乙酸代表的羧酸(通式:R-COOH,R為氫或碳數為1至20的直鏈或支鏈的烷基或烯基,較佳是甲基、乙基、丙基、丁基、戊基、或己基)。除了乙酸之外的羧酸可包含甲酸(HCOOH)、丙酸(CH3 CH2 COOH)、丁酸(CH3 (CH2 )2 COOH)、戊酸(CH3 (CH2 )3 COOH)等。在該等羧酸中,更較佳是使用甲酸、乙酸、及丙酸。
當該有機化合物係乙酸時,氧化銅和乙酸之間的反應係被加速,且產生揮發性的Cu(CH3 COO)與H2 O。因此,氧化銅分子係與Cu膜分開。此相同的反應發生在使用另一種有機化合物(有機酸)的情況下,諸如乙酸之外的甲酸或丙酸。因此,Cu膜係加以蝕刻。
在一個實施例中,蝕刻劑370可包含諸如CH3 COOH的化學化合物。Cux O和CH3 COOH之間形成揮發性Cu產物的自發性反應已發表於期刊中。使用定向性之高能的O射束(中性射束)以造成在hfacH的氛圍(且更普遍地,在酸氛圍)下(使用硬遮罩)之非等向性Cu蝕刻的方法係被熟知。然而,本發明的發明者已發現Cux O與CH3 COOH的反應性係比Cux O與hfacH的反應性高得多。例如:在CH3 COOH之1E(-5) torr等級的氛圍壓力及室溫的基板下,可得到一非常高且適合生產的Cux O移除速率。例如:CH3 COOH之3E(-5) torr的氛圍壓力和非等向性過熱O(例如100 eV)藉由該非等向性過熱O的「次植入」形成Cux O。
CH3 COOH和氧化的Cu之間的淨表面反應可寫成: CuO+2CH3 COOH →Cu(CH3 COO)2 +H2 O (1) Cu2 O+4CH3 COOH→2Cu(CH3 COO)2 +H2 O+H2 (2) 根據方程式(1)及(2),CH3 COOH與氧化的Cu反應而形成揮發性的蝕刻產物Cu(CH3 COO)2 +H2 O。因此,當CH3 COOH係選擇為圖3中的蝕刻劑370時,該揮發性的蝕刻產物390係Cu(CH3 COO)2 和H2 O。Cu(CH3 COO)2 在低溫下(Pvap =0.1 Torr@50° C)係揮發性的,且不顯著地再沉積於Cu蝕刻特徵部的側壁上或於處理腔室壁上。
惰性氣體可加至上述處理氣體化學成分的其中任何一者。惰性氣體可包含氬氣、氦氣、氪氣、氙氣及氮氣的其中至少一者。例如:對處理氣體化學成分添加惰性氣體係用以稀釋處理氣體或調整處理氣體分壓。
輸送氣態的CH3 COOH蝕刻氣體至處理腔室可使用遞送系統達成,該遞送系統可包含起泡器系統和質流控制器(MFC)。該起泡器系統可搭配或不搭配載體氣體(諸如氬氣(Ar))使用。當使用載體氣體時,其係通過CH3 COOH液體起泡且與CH3 COOH蒸氣變為飽和。處理腔室中CH3 COOH蒸氣的分壓係由起泡器中CH3 COOH液體的溫度加以控制。CH3 COOH和載體氣體的示例氣體流率係小於1000 sccm,較佳是小於500sccm。或者,液態注射系統可用以遞送CH3 COOH至處理腔室。蝕刻劑(諸如本發明中的CH3 COOH試劑)的運送與使用係在此技術領域中所熟知。
Nguyen和Chameski在標題為“In-situ method of cleaning a metal-organic chemical vapor deposition chamber”的美國專利案號第6,284,052號中描述一種方法以清潔金屬沉積腔室的內表面、且尤其是夾頭。該方法首先以氧電漿氧化待清潔的表面,且接著藉由使用CH3 COOH移除呈蒸氣的氧化物產物。
Koide et al.在標題為“Method of cleaning metallic films built up within thin film deposition chamber”的美國專利案號第5,993,679號中描述一種方法,包含:氧化步驟以氧化金屬膜;錯合步驟以錯合氧化物膜;及昇華步驟以昇華錯合物。這些清潔步驟的條件係設定使得該氧化步驟係速率決定步驟。
本發明的焦點係允許用於圖案化多層結構之Cu層及含Cu層的非等向性蝕刻。上述方法的主要目的係透過氧化的金屬膜與CH3 COOH的反應形成揮發性的蝕刻產物以從處理腔室清潔及移除金屬膜。
圖4顯示根據本發明一較佳實施例的處理系統。處理系統600包含處理腔室605及O原子射束源610。處理腔室605包含基板支架615,而基板支架615上係固定將處理的基板620;氣體注射系統625,用於引進處理氣體630進入處理腔室605;及真空幫浦系統635。例如:閘閥(未顯示)係用以調節真空幫浦系統635。處理氣體630係經由氣體注射系統625引入且調節處理壓力。氣體注射系統625允許處理氣體630從異地氣體源遞送至處理腔室的獨立控制。處理氣體630可包含蝕刻劑及惰性氣體。O原子射束源610產生引進至處理腔室605之高動能中性O原子的方向射束640。O原子的射束640在蝕刻劑的存在下蝕刻基板620上的含Cu層,如圖1-3中所描述。
基板620係透過槽閥(未顯示)和腔室饋通部(未顯示)藉由機器人基板轉移系統轉移進出處理腔室605,其中基板係由配置於基板支架615內的基板升降銷(未顯示)加以接收,且由配置於其中的元件機械地轉移。一旦基板620係從基板轉移系統加以接收,基板620係被下降至基板支架615的上表面。
在一個替代的實施例中,基板620係藉由靜電夾具(未顯示)固定於基板支架615。此外,基板支架615進一步包含冷卻系統,該冷卻系統包括再循環的冷卻劑流,其從基板支架615接收熱且轉移熱至熱交換器系統(未顯示),或當加熱時,從熱交換器系統轉出熱。再者,氣體可遞送至基板的背面以增進基板620和基板支架615之間的氣間隙熱傳導。這樣的一個系統係使用於當基板的溫度控制係需要提高或降低溫度時。真空幫浦系統635較佳是包含可高達5000公升/每秒(及更高)之泵壓速度的渦輪分子真空幫浦(TMP),及用於調節腔室壓力的閘閥。
控制器645包含微處理器、記憶體、及可產生控制電壓的數位I/O埠,該控制電壓足以傳遞及活化傳到處理系統600的輸入訊號,及監測來自處理系統600的輸出訊號。此外,控制器645係耦接至處理腔室605、O原子射束源610、過程監測系統650、氣體注射系統625及真空幫浦系統635,且與上述各者交換訊息。儲存在記憶體中的程式係用以根據儲存的處理配方控制上述處理系統600的元件。控制器645的一個例子係由Texas Instruments, Dallas, Tex市售之型號 TMS320的數位訊號處理器(DSP)。
過程監測系統650可包含例如質譜儀系統以測量氣態物種(諸如在處理環境中的蝕刻劑及蝕刻副產物)。通常,過程監測系統650係多用途的診斷工具,該診斷工具可執行諸如過程分析和端點偵測的多任務。顯示於圖4中的過程監測系統650係附接於處理腔室605。在一替代的實施例中,過程監測系統係位於真空幫浦系統635的下游處。過程監測系統650可與控制器645一起使用以決定蝕刻過程的狀態,且提供回饋以確保過程合規性。
現在將敘述過熱O原子源的例子。已發展用於產生中性過熱O原子之射束的各種方法和裝置。用以產生原子氧之分子氧(O2 )供應氣體的解離性離子化可使用光學雷射誘導放電、DC或AC電弧、電感性耦合、微波、或電子轟擊放電加以執行,上述係通常執行於連接至晶圓處理腔室之一個個別的腔室。從電漿中O2 的解離形成之O離子係被加速至選定的高動能,且接著加以電荷中和,形成中性過熱O原子的射束。O離子的電荷中和作用可使用各種不同的方法執行。一個例子係來自O離子與金屬表面在切線入射之相互作用的電子轉移。
Chen和Yvonne在標題為“RF-grounded sub-Debye neutralizer grid”的美國專利案號第6,331,701號中描述一裝置,該裝置用於產生處理大基板之動能範圍從20 eV至400 eV且射束直徑1吋至大於10吋之中性O原子過熱射束。該過熱射束係藉由將來自RF電漿之加速的氧離子通過中和柵格而產生,其中該氧離子係藉由前表面散射中和電荷。該過熱射束具有中性O原子的高通量及小發散角(~6-3°)。
光學雷射誘導放電可利用脈衝的雷射輻射為能量源用於在膨脹噴嘴中解離供應氣體(例如O2 )。該膨脹產生中性反應物種(例如O原子)的過熱射束,該射束可使用膨脹腔室和處理腔室間的孔加以準直。
有機化合物氣體係從有機化合物氣體供應單元供應進入目標腔室。在此,作為有機酸的乙酸係用作有機化合物的一個例子。圖5說明可根據本發明實施例使用之一個示例的有機化合物供應單元。例如:該有機化合物供應單元可用作圖4中的氣體注射系統625。如圖所示,有機化合物氣體供應單元30包含用於儲存有機化合物的中間容器36及槽37,且閥37a係配置在連接中間容器36和槽37的管線36a之上。有機化合物係透過管線32從中間容器36供應至目標腔室,且該管線32係設有可變漏閥38。中間容器36具有用於偵測其中有機化合物含量的感測器(例如:液體表面感測器39),使得在中間容器36內有機化合物的含量係加以測量。當液體表面的下降係由液體表面感測器39加以偵測時,該中間容器36係藉由可變漏閥38與真空斷接,且有機化合物係藉由打開閥37a從槽37供應至中間容器。
貯槽37中的有機化合物(乙酸)係加以蒸發,且該蒸發的有機化合物係供應至目標腔室。此時,該有機化合物(乙酸)的蒸發量係藉由控制可變漏閥38的開口程度而加以控制。該有機化合物氣體的供給量係設定至允許足夠的有機化合物分子被吸附在形成於基板上之Cu膜表面的程度。目標腔室中的壓力(乙酸的分壓)係較佳是約10-4 Torr至10-6 Torr。壓力計可為例如離子計或電容式壓力計。
如上述討論的實施例,還原氣體包含酸(諸如CH3 COOH),且反應氣體包含O2 。惰性氣體(諸如He、Ne、Ar、Kr、及Xe)亦可被使用。再者,該反應氣體和還原氣體可以單步驟製程同時引進電漿處理腔室,或以多步驟製程依序引進電漿處理腔室。
應理解本發明的各種修改及變化可應用於實踐本發明。因此,將理解在隨附申請專利範圍之範疇內,本發明可以有別於在此特別敘述的方式實施。
30‧‧‧有機化合物氣體供應單元
32‧‧‧管線
36‧‧‧中間容器
36a‧‧‧管線
37‧‧‧槽
37a‧‧‧閥
38‧‧‧閥
39‧‧‧液體表面感測器
200‧‧‧區塊
210‧‧‧基板
220‧‧‧含Cu層
220’‧‧‧圖案化的Cu結構
230‧‧‧硬遮罩或光阻材料
230’‧‧‧光阻圖案
300‧‧‧區塊
310‧‧‧含Cu層
320‧‧‧基板
330‧‧‧光阻圖案
340‧‧‧箭號(高能的O原子)
350‧‧‧側壁
360‧‧‧氧化的Cu層
370‧‧‧蝕刻劑
380‧‧‧吸附的蝕刻劑
390‧‧‧蝕刻產物
600‧‧‧處理系統
605‧‧‧處理腔室
610‧‧‧O原子射束源
615‧‧‧基板支架
620‧‧‧基板
625‧‧‧氣體注射系統
630‧‧‧處理氣體
635‧‧‧真空幫浦系統
640‧‧‧射束
645‧‧‧控制器
650‧‧‧過程監測系統
本發明更完整的理解及其中許多伴隨的優點,藉由參考下列詳細的描述與隨附圖示變得更好理解,其中: 圖1係根據本發明用於蝕刻含Cu層的流程圖; 圖2A-2D顯示根據本發明之含Cu層之非等向性蝕刻的橫剖面示意圖; 圖3顯示根據本發明之含Cu層之非等向性蝕刻的橫剖面示意圖; 圖4顯示根據本發明之一個較佳實施例的處理系統; 圖5顯示圖4的蝕刻裝置中之有機化合物氣體供應單元的一個例子。

Claims (18)

  1. 一種在基板上蝕刻含銅層的方法,包含:裝載一基板進入一處理腔室,該處理腔室具有一中性射束源及一基板支架,該基板具有一含銅層及形成於其上的蝕刻遮罩;曝露該含銅層於包含一反應氣體的一定向中性射束,該反應氣體基於該中性射束的定向性在該含銅層中所形成特徵部之一部分的曝露表面上非等向性地形成一第一含銅化合物;引進包含一羧酸的一還原氣體進入該處理腔室,接近該基板支架,該還原氣體自發性地與該第一含銅化合物反應以形成一揮發性的第二含銅化合物;將該揮發性的第二含銅化合物從該處理腔室泵出,以在該含銅層內非等向性地蝕刻且形成一圖案。
  2. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該羧酸包含乙酸、甲酸、丙酸、丁酸及戊酸的其中至少一者。
  3. 如申請專利範圍第2項之在基板上蝕刻含銅層的方法,其中,該還原氣體包含CH3COOH。
  4. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該反應氣體包含O2
  5. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該第一含銅化合物係在該含銅層中所形成該特徵部的底部表面加以形成。
  6. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該基板係維持在0至100℃之間的一溫度。
  7. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該基板係維持在約25℃的一溫度。
  8. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,進一步包含引進一惰性氣體進入該處理腔室。
  9. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該中性射束之該反應氣體的動能係介於1meV和1keV之間。
  10. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該中性射束之該反應氣體的動能係介於10eV和300eV之間。
  11. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該中性射束之該反應氣體的動能係介於50meV和1eV之間。
  12. 如申請專利範圍第1項之在基板上蝕刻含銅層的方法,其中,該反應氣體的該定向中性射束的發散角係小於約20°。
  13. 如申請專利範圍第12項之在基板上蝕刻含銅層的方法,其中,該反應氣體的該定向中性射束的發散角係小於約10°。
  14. 根據申請專利範圍第8項之在基板上蝕刻含銅層的方法,其中,該惰性氣體包含氬氣、氦氣、氙氣、及氮氣的其中至少一者。
  15. 一種非等向性地蝕刻含Cu層的方法,包含以下步驟:提供覆蓋一基板的一含Cu層;引進具有介於100eV和1eV之間動能之中性氧原子的一定向射束;基於該射束的定向性,藉由曝露於該氧原子的射束非等向性地氧化一部分的該含Cu層;引進一羧酸氣體,其當與該氧化的含Cu層反應時自發性地形成揮發性的蝕刻產物;以及從該氧化的含Cu層移除該等蝕刻產物以非等向性地蝕刻該含Cu層。
  16. 根據申請專利範圍第15項之非等向性地蝕刻含Cu層的方法,其中,該有機化合物氣體包含CH3COOH。
  17. 一種在基板上蝕刻含銅層的方法,包含:裝載一基板進入一處理腔室,該處理腔室具有一中性射束源及一基板支架,該基板具有一含銅層及形成於其上的蝕刻遮罩;曝露該含銅層於包含一反應氣體的一定向中性射束,該反應氣體基於該中性射束的定向性在該含銅層中所形成特徵部之一部分的曝露表面上非等向性地形成一第一含銅化合物;引進乙酸氣體進入該處理腔室,接近該基板支架,該乙酸氣體與該第一含銅化合物自發性地反應以形成一揮發性的含銅化合物;以及將該揮發性的含銅化合物從該處理腔室泵出,以在該含銅層內非等向性地蝕刻且形成一圖案。
  18. 如申請專利範圍第17項之在基板上蝕刻含銅層的方法,其中,該第一含銅化合物係在該含銅層中所形成該特徵部的底部表面加以形成。
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