TWI646639B - 半導體封裝 - Google Patents

半導體封裝 Download PDF

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Publication number
TWI646639B
TWI646639B TW103131554A TW103131554A TWI646639B TW I646639 B TWI646639 B TW I646639B TW 103131554 A TW103131554 A TW 103131554A TW 103131554 A TW103131554 A TW 103131554A TW I646639 B TWI646639 B TW I646639B
Authority
TW
Taiwan
Prior art keywords
package
solder
metal
metal post
seed pattern
Prior art date
Application number
TW103131554A
Other languages
English (en)
Chinese (zh)
Other versions
TW201517222A (zh
Inventor
金東先
柳盛旭
李知行
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130110974A external-priority patent/KR102109042B1/ko
Priority claimed from KR1020130115333A external-priority patent/KR102091619B1/ko
Priority claimed from KR1020130115332A external-priority patent/KR102093927B1/ko
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201517222A publication Critical patent/TW201517222A/zh
Application granted granted Critical
Publication of TWI646639B publication Critical patent/TWI646639B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/28—Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
TW103131554A 2013-09-16 2014-09-12 半導體封裝 TWI646639B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020130110974A KR102109042B1 (ko) 2013-09-16 2013-09-16 반도체 패키지
??10-2013-0110974 2013-09-16
??10-2013-0115332 2013-09-27
??10-2013-0115333 2013-09-27
KR1020130115333A KR102091619B1 (ko) 2013-09-27 2013-09-27 반도체 패키지
KR1020130115332A KR102093927B1 (ko) 2013-09-27 2013-09-27 반도체 패키지

Publications (2)

Publication Number Publication Date
TW201517222A TW201517222A (zh) 2015-05-01
TWI646639B true TWI646639B (zh) 2019-01-01

Family

ID=51518709

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131554A TWI646639B (zh) 2013-09-16 2014-09-12 半導體封裝

Country Status (5)

Country Link
US (1) US9252112B2 (https=)
EP (1) EP2849226B1 (https=)
JP (1) JP6419500B2 (https=)
CN (1) CN104465580B (https=)
TW (1) TWI646639B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI517269B (zh) * 2013-09-27 2016-01-11 矽品精密工業股份有限公司 層疊式封裝結構及其製法
KR102152865B1 (ko) * 2014-02-06 2020-09-07 엘지이노텍 주식회사 인쇄회로기판, 이를 포함하는 패키지 기판 및 이의 제조 방법
JP2016171190A (ja) * 2015-03-12 2016-09-23 イビデン株式会社 パッケージ−オン−パッケージ用プリント配線板
KR102446861B1 (ko) 2017-09-21 2022-09-23 삼성전자주식회사 적층 패키지 및 그의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121692A1 (en) * 2001-03-05 2002-09-05 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
US20080142944A1 (en) * 2006-12-13 2008-06-19 Kiyoshi Oi Stacked package and method for manufacturing the package
US20080284001A1 (en) * 2007-04-13 2008-11-20 Nec Corporation Semiconductor device and fabrication method
US20120013000A1 (en) * 2010-07-19 2012-01-19 Tessera Research Llc Stackable molded microelectronic packages
US20130175687A1 (en) * 2011-01-27 2013-07-11 Unimicron Technology Corporation Package stack device and fabrication method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145327A (ja) * 1997-11-07 1999-05-28 Shinko Electric Ind Co Ltd 半導体装置および該半導体装置の実装構造
JP2007194436A (ja) * 2006-01-19 2007-08-02 Elpida Memory Inc 半導体パッケージ、導電性ポスト付き基板、積層型半導体装置、半導体パッケージの製造方法及び積層型半導体装置の製造方法
JP5217043B2 (ja) * 2007-07-11 2013-06-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5056718B2 (ja) * 2008-10-16 2012-10-24 株式会社デンソー 電子装置の製造方法
JP5193898B2 (ja) * 2009-02-12 2013-05-08 新光電気工業株式会社 半導体装置及び電子装置
KR20100121231A (ko) * 2009-05-08 2010-11-17 삼성전자주식회사 회로패턴 들뜸 현상을 억제하는 패키지 온 패키지 및 그 제조방법
US20110024899A1 (en) * 2009-07-28 2011-02-03 Kenji Masumoto Substrate structure for cavity package
JP5599276B2 (ja) * 2010-09-24 2014-10-01 新光電気工業株式会社 半導体素子、半導体素子実装体及び半導体素子の製造方法
JP5462777B2 (ja) * 2010-12-09 2014-04-02 日本特殊陶業株式会社 多層配線基板の製造方法
KR101167805B1 (ko) * 2011-04-25 2012-07-25 삼성전기주식회사 패키지 기판 및 이의 제조방법
JP5906812B2 (ja) * 2012-02-29 2016-04-20 富士通株式会社 配線構造、半導体装置及び配線構造の製造方法
US9368438B2 (en) * 2012-12-28 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package (PoP) bonding structures

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121692A1 (en) * 2001-03-05 2002-09-05 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
US20080142944A1 (en) * 2006-12-13 2008-06-19 Kiyoshi Oi Stacked package and method for manufacturing the package
US20080284001A1 (en) * 2007-04-13 2008-11-20 Nec Corporation Semiconductor device and fabrication method
US20120013000A1 (en) * 2010-07-19 2012-01-19 Tessera Research Llc Stackable molded microelectronic packages
US20130175687A1 (en) * 2011-01-27 2013-07-11 Unimicron Technology Corporation Package stack device and fabrication method thereof

Also Published As

Publication number Publication date
JP6419500B2 (ja) 2018-11-07
JP2015057827A (ja) 2015-03-26
TW201517222A (zh) 2015-05-01
EP2849226B1 (en) 2018-08-22
CN104465580A (zh) 2015-03-25
EP2849226A2 (en) 2015-03-18
US20150076691A1 (en) 2015-03-19
EP2849226A3 (en) 2015-04-29
US9252112B2 (en) 2016-02-02
CN104465580B (zh) 2017-08-04

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