TWI646582B - Film forming method of tungsten film and method of manufacturing semiconductor device - Google Patents

Film forming method of tungsten film and method of manufacturing semiconductor device Download PDF

Info

Publication number
TWI646582B
TWI646582B TW104109139A TW104109139A TWI646582B TW I646582 B TWI646582 B TW I646582B TW 104109139 A TW104109139 A TW 104109139A TW 104109139 A TW104109139 A TW 104109139A TW I646582 B TWI646582 B TW I646582B
Authority
TW
Taiwan
Prior art keywords
film
gas
tungsten
wcl
processed
Prior art date
Application number
TW104109139A
Other languages
English (en)
Chinese (zh)
Other versions
TW201545210A (zh
Inventor
堀田隼史
饗場康
前川浩治
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201545210A publication Critical patent/TW201545210A/zh
Application granted granted Critical
Publication of TWI646582B publication Critical patent/TWI646582B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW104109139A 2014-03-25 2015-03-23 Film forming method of tungsten film and method of manufacturing semiconductor device TWI646582B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014061929 2014-03-25
JP2014-061929 2014-03-25
JP2015-012922 2015-01-27
JP2015012922A JP6437324B2 (ja) 2014-03-25 2015-01-27 タングステン膜の成膜方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201545210A TW201545210A (zh) 2015-12-01
TWI646582B true TWI646582B (zh) 2019-01-01

Family

ID=54162116

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104109139A TWI646582B (zh) 2014-03-25 2015-03-23 Film forming method of tungsten film and method of manufacturing semiconductor device
TW107142177A TWI703620B (zh) 2014-03-25 2015-03-23 鎢膜之成膜方法及成膜裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW107142177A TWI703620B (zh) 2014-03-25 2015-03-23 鎢膜之成膜方法及成膜裝置

Country Status (5)

Country Link
US (1) US9536782B2 (https=)
JP (1) JP6437324B2 (https=)
KR (1) KR101785145B1 (https=)
CN (2) CN104947064B (https=)
TW (2) TWI646582B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6416679B2 (ja) * 2015-03-27 2018-10-31 東京エレクトロン株式会社 タングステン膜の成膜方法
CN113652672B (zh) 2015-05-27 2023-12-22 Asm Ip 控股有限公司 用于含钼或钨薄膜的ald的前体的合成和用途
JP6710089B2 (ja) * 2016-04-04 2020-06-17 東京エレクトロン株式会社 タングステン膜の成膜方法
US10087523B2 (en) * 2016-05-20 2018-10-02 Lam Research Corporation Vapor delivery method and apparatus for solid and liquid precursors
US20190161853A1 (en) * 2016-07-26 2019-05-30 Tokyo Electron Limited Method for forming tungsten film
JP6751631B2 (ja) * 2016-09-13 2020-09-09 東京エレクトロン株式会社 基板の凹部をタングステンで充填する方法
US10358407B2 (en) * 2016-10-12 2019-07-23 Asm Ip Holding B.V. Synthesis and use of precursors for vapor deposition of tungsten containing thin films
KR102254275B1 (ko) 2016-12-05 2021-05-20 제이엑스금속주식회사 고순도 5염화텅스텐 및 그 제조 방법
JP6913752B2 (ja) * 2016-12-15 2021-08-04 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 核形成のない間隙充填ａｌｄプロセス
US10460987B2 (en) * 2017-05-09 2019-10-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package device with integrated antenna and manufacturing method thereof
JP7018748B2 (ja) 2017-11-28 2022-02-14 東京エレクトロン株式会社 成膜方法及び成膜条件の算出方法
JP7072399B2 (ja) * 2018-02-21 2022-05-20 東京エレクトロン株式会社 タングステン膜の成膜方法、成膜システム及び記憶媒体
JP7149788B2 (ja) * 2018-09-21 2022-10-07 東京エレクトロン株式会社 成膜方法及び成膜装置
US11387112B2 (en) * 2018-10-04 2022-07-12 Tokyo Electron Limited Surface processing method and processing system
EP3738928A4 (en) 2018-10-25 2021-11-10 JX Nippon Mining & Metals Corporation MOLYBDENOXYCHLORIDE OR TUNGSTEN OXYCHLORIDE AND METHOD FOR MANUFACTURING THEREOF
US12312678B2 (en) * 2018-12-19 2025-05-27 Entegris, Inc. Methods for depositing a tungsten or molybdenum layer in the presence of a reducing co-reactant
JP7362258B2 (ja) 2019-02-08 2023-10-17 東京エレクトロン株式会社 基板処理方法及び成膜システム
CN113316840A (zh) * 2019-03-28 2021-08-27 东京毅力科创株式会社 半导体装置的制造方法
JP2021001361A (ja) 2019-06-19 2021-01-07 東京エレクトロン株式会社 処理方法及び基板処理システム
KR102867763B1 (ko) 2019-11-21 2025-10-14 삼성전자주식회사 반도체 장치의 제조방법 및 반도체 장치의 제조 설비
JP7487538B2 (ja) * 2020-04-15 2024-05-21 東京エレクトロン株式会社 タングステン膜を形成する方法及び装置、並びにタングステン膜を形成する前の中間膜の形成を行う装置
US20240271274A1 (en) * 2023-01-12 2024-08-15 University Of Central Florida Research Foundation, Inc. Stress-controlled defect engineering in ceria nanostructures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849260A (en) * 1986-06-30 1989-07-18 Nihon Sinku Gijutsu Kabushiki Kaisha Method for selectively depositing metal on a substrate
US5175017A (en) * 1990-01-29 1992-12-29 Hitachi, Ltd. Method of forming metal or metal silicide film

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278827A (ja) * 1989-04-20 1990-11-15 Nec Corp 半導体集積回路装置の配線構造とその形成方法
JP2829143B2 (ja) * 1991-03-25 1998-11-25 シャープ株式会社 半導体装置の製造方法
JPH05226282A (ja) 1992-02-13 1993-09-03 Nec Corp タングステン膜の形成方法
JP3127348B2 (ja) * 1995-02-27 2001-01-22 エルジイ・セミコン・カンパニイ・リミテッド 凹凸の表面形状を有するタングステン膜を用いた半導体装置の製造方法
CN1115723C (zh) * 1996-11-15 2003-07-23 三星电子株式会社 氮化钨层制造方法及使用同样原理的金属连线制造方法
US6156382A (en) 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
WO2002041379A1 (en) * 2000-11-17 2002-05-23 Tokyo Electron Limited Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring
US7262125B2 (en) * 2001-05-22 2007-08-28 Novellus Systems, Inc. Method of forming low-resistivity tungsten interconnects
JP4032872B2 (ja) 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
KR101035221B1 (ko) * 2002-12-27 2011-05-18 가부시키가이샤 알박 질화 텅스텐막의 형성 방법
JP3956049B2 (ja) 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
CN102534543A (zh) * 2012-02-22 2012-07-04 上海大学 一种化学气相沉积制备钨的方法及其装置
US8975184B2 (en) * 2012-07-27 2015-03-10 Novellus Systems, Inc. Methods of improving tungsten contact resistance in small critical dimension features
US9230815B2 (en) * 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849260A (en) * 1986-06-30 1989-07-18 Nihon Sinku Gijutsu Kabushiki Kaisha Method for selectively depositing metal on a substrate
US5175017A (en) * 1990-01-29 1992-12-29 Hitachi, Ltd. Method of forming metal or metal silicide film

Also Published As

Publication number Publication date
TW201909247A (zh) 2019-03-01
TWI703620B (zh) 2020-09-01
JP2015193908A (ja) 2015-11-05
KR20150111302A (ko) 2015-10-05
CN104947064A (zh) 2015-09-30
US20150279735A1 (en) 2015-10-01
JP6437324B2 (ja) 2018-12-12
CN104947064B (zh) 2018-11-13
US9536782B2 (en) 2017-01-03
TW201545210A (zh) 2015-12-01
KR101785145B1 (ko) 2017-10-12
CN109280901A (zh) 2019-01-29

Similar Documents

Publication Publication Date Title
TWI646582B (zh) Film forming method of tungsten film and method of manufacturing semiconductor device
JP6700459B2 (ja) タングステン膜の成膜方法および成膜装置
TWI642140B (zh) Film formation method of tungsten film
JP6416679B2 (ja) タングステン膜の成膜方法
TWI713523B (zh) 金屬膜之成膜方法
JP6541438B2 (ja) 金属膜のストレス低減方法および金属膜の成膜方法
TWI683022B (zh) 成膜方法、鎢膜之成膜方法及記憶媒體
JP2016098406A (ja) モリブデン膜の成膜方法
JP6391355B2 (ja) タングステン膜の成膜方法
JP2014019912A (ja) タングステン膜の成膜方法
TW201840885A (zh) 成膜方法
JP6608026B2 (ja) タングステン膜の成膜方法および成膜装置