JP6437324B2 - タングステン膜の成膜方法および半導体装置の製造方法 - Google Patents

タングステン膜の成膜方法および半導体装置の製造方法 Download PDF

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JP6437324B2
JP6437324B2 JP2015012922A JP2015012922A JP6437324B2 JP 6437324 B2 JP6437324 B2 JP 6437324B2 JP 2015012922 A JP2015012922 A JP 2015012922A JP 2015012922 A JP2015012922 A JP 2015012922A JP 6437324 B2 JP6437324 B2 JP 6437324B2
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gas
film
tungsten
substrate
processed
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JP2015193908A (ja
JP2015193908A5 (https=
Inventor
隼史 堀田
隼史 堀田
康 饗場
康 饗場
浩治 前川
浩治 前川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW104109139A priority patent/TWI646582B/zh
Priority to US14/664,945 priority patent/US9536782B2/en
Priority to TW107142177A priority patent/TWI703620B/zh
Priority to KR1020150040022A priority patent/KR101785145B1/ko
Priority to CN201510133979.4A priority patent/CN104947064B/zh
Priority to CN201811389808.8A priority patent/CN109280901A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2015012922A 2014-03-25 2015-01-27 タングステン膜の成膜方法および半導体装置の製造方法 Active JP6437324B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015012922A JP6437324B2 (ja) 2014-03-25 2015-01-27 タングステン膜の成膜方法および半導体装置の製造方法
US14/664,945 US9536782B2 (en) 2014-03-25 2015-03-23 Tungsten film forming method, semiconductor device manufacturing method, and storage medium
TW107142177A TWI703620B (zh) 2014-03-25 2015-03-23 鎢膜之成膜方法及成膜裝置
KR1020150040022A KR101785145B1 (ko) 2014-03-25 2015-03-23 텅스텐막의 성막 방법, 반도체 장치의 제조 방법 및 기억 매체
TW104109139A TWI646582B (zh) 2014-03-25 2015-03-23 Film forming method of tungsten film and method of manufacturing semiconductor device
CN201510133979.4A CN104947064B (zh) 2014-03-25 2015-03-25 钨膜的成膜方法和半导体器件的制造方法
CN201811389808.8A CN109280901A (zh) 2014-03-25 2015-03-25 钨膜的成膜方法和成膜装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014061929 2014-03-25
JP2014061929 2014-03-25
JP2015012922A JP6437324B2 (ja) 2014-03-25 2015-01-27 タングステン膜の成膜方法および半導体装置の製造方法

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JP2018213615A Division JP6608026B2 (ja) 2014-03-25 2018-11-14 タングステン膜の成膜方法および成膜装置

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JP2015193908A JP2015193908A (ja) 2015-11-05
JP2015193908A5 JP2015193908A5 (https=) 2017-12-28
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US (1) US9536782B2 (https=)
JP (1) JP6437324B2 (https=)
KR (1) KR101785145B1 (https=)
CN (2) CN104947064B (https=)
TW (2) TWI646582B (https=)

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JP6710089B2 (ja) * 2016-04-04 2020-06-17 東京エレクトロン株式会社 タングステン膜の成膜方法
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US20190161853A1 (en) * 2016-07-26 2019-05-30 Tokyo Electron Limited Method for forming tungsten film
JP6751631B2 (ja) * 2016-09-13 2020-09-09 東京エレクトロン株式会社 基板の凹部をタングステンで充填する方法
US10358407B2 (en) * 2016-10-12 2019-07-23 Asm Ip Holding B.V. Synthesis and use of precursors for vapor deposition of tungsten containing thin films
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JP6913752B2 (ja) * 2016-12-15 2021-08-04 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 核形成のない間隙充填ａｌｄプロセス
US10460987B2 (en) * 2017-05-09 2019-10-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package device with integrated antenna and manufacturing method thereof
JP7018748B2 (ja) 2017-11-28 2022-02-14 東京エレクトロン株式会社 成膜方法及び成膜条件の算出方法
JP7072399B2 (ja) * 2018-02-21 2022-05-20 東京エレクトロン株式会社 タングステン膜の成膜方法、成膜システム及び記憶媒体
JP7149788B2 (ja) * 2018-09-21 2022-10-07 東京エレクトロン株式会社 成膜方法及び成膜装置
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EP3738928A4 (en) 2018-10-25 2021-11-10 JX Nippon Mining & Metals Corporation MOLYBDENOXYCHLORIDE OR TUNGSTEN OXYCHLORIDE AND METHOD FOR MANUFACTURING THEREOF
US12312678B2 (en) * 2018-12-19 2025-05-27 Entegris, Inc. Methods for depositing a tungsten or molybdenum layer in the presence of a reducing co-reactant
JP7362258B2 (ja) 2019-02-08 2023-10-17 東京エレクトロン株式会社 基板処理方法及び成膜システム
CN113316840A (zh) * 2019-03-28 2021-08-27 东京毅力科创株式会社 半导体装置的制造方法
JP2021001361A (ja) 2019-06-19 2021-01-07 東京エレクトロン株式会社 処理方法及び基板処理システム
KR102867763B1 (ko) 2019-11-21 2025-10-14 삼성전자주식회사 반도체 장치의 제조방법 및 반도체 장치의 제조 설비
JP7487538B2 (ja) * 2020-04-15 2024-05-21 東京エレクトロン株式会社 タングステン膜を形成する方法及び装置、並びにタングステン膜を形成する前の中間膜の形成を行う装置
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Also Published As

Publication number Publication date
TW201909247A (zh) 2019-03-01
TWI703620B (zh) 2020-09-01
JP2015193908A (ja) 2015-11-05
KR20150111302A (ko) 2015-10-05
CN104947064A (zh) 2015-09-30
US20150279735A1 (en) 2015-10-01
CN104947064B (zh) 2018-11-13
US9536782B2 (en) 2017-01-03
TWI646582B (zh) 2019-01-01
TW201545210A (zh) 2015-12-01
KR101785145B1 (ko) 2017-10-12
CN109280901A (zh) 2019-01-29

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