TWI640080B - 晶圓堆疊之組裝 - Google Patents

晶圓堆疊之組裝 Download PDF

Info

Publication number
TWI640080B
TWI640080B TW102117440A TW102117440A TWI640080B TW I640080 B TWI640080 B TW I640080B TW 102117440 A TW102117440 A TW 102117440A TW 102117440 A TW102117440 A TW 102117440A TW I640080 B TWI640080 B TW I640080B
Authority
TW
Taiwan
Prior art keywords
wafer
stack
optical
curable adhesive
spacer
Prior art date
Application number
TW102117440A
Other languages
English (en)
Chinese (zh)
Other versions
TW201405764A (zh
Inventor
哈特牧 魯德曼
Hartmut Rudmann
Original Assignee
海特根微光學公司
Heptagon Micro Optics Pte. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 海特根微光學公司, Heptagon Micro Optics Pte. Ltd. filed Critical 海特根微光學公司
Publication of TW201405764A publication Critical patent/TW201405764A/zh
Application granted granted Critical
Publication of TWI640080B publication Critical patent/TWI640080B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Bakery Products And Manufacturing Methods Therefor (AREA)
TW102117440A 2012-05-17 2013-05-16 晶圓堆疊之組裝 TWI640080B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261648178P 2012-05-17 2012-05-17
US61/648,178 2012-05-17

Publications (2)

Publication Number Publication Date
TW201405764A TW201405764A (zh) 2014-02-01
TWI640080B true TWI640080B (zh) 2018-11-01

Family

ID=49584061

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102117440A TWI640080B (zh) 2012-05-17 2013-05-16 晶圓堆疊之組裝

Country Status (8)

Country Link
US (3) US9716081B2 (enExample)
EP (1) EP2850654B1 (enExample)
JP (2) JP6151354B2 (enExample)
KR (2) KR102208832B1 (enExample)
CN (2) CN104335340B (enExample)
SG (2) SG11201407221TA (enExample)
TW (1) TWI640080B (enExample)
WO (1) WO2013172786A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140160751A1 (en) * 2012-12-11 2014-06-12 Vixar Inc. Low cost optical package
WO2015053706A1 (en) 2013-10-08 2015-04-16 Heptagon Micro Optics Pte. Ltd. Partial spacers for wafer-level fabricated modules
US9773765B2 (en) 2013-11-22 2017-09-26 Heptagon Micro Optics Pte. Ltd. Compact optoelectronic modules
US20160011054A1 (en) * 2014-07-11 2016-01-14 Omnivision Technologies, Inc. Thermal imaging systems with vacuum-sealing lens cap and associated wafer-level manufacturing methods
US9768361B2 (en) 2014-07-23 2017-09-19 Heptagon Micro Optics Pte. Ltd. Light emitter and light detector modules including vertical alignment features
FR3025359B1 (fr) * 2014-09-01 2016-11-04 Soc Francaise De Detecteurs Infrarouges - Sofradir Procede de positionnement d'elements, notamment optiques sur la face arriere d'un detecteur infrarouge de type hybride
DE102015002536B4 (de) 2015-02-28 2021-10-28 Schölly Fiberoptic GmbH Optikanordnung, Endoskop und korrespondierendes Verfahren zur Fertigung
US20160307881A1 (en) * 2015-04-20 2016-10-20 Advanced Semiconductor Engineering, Inc. Optical sensor module and method for manufacturing the same
TWI596985B (zh) * 2015-07-22 2017-08-21 億光電子工業股份有限公司 發光裝置
EP3341974B1 (en) * 2015-08-27 2020-07-08 Heptagon Micro Optics Pte. Ltd. Optical assemblies including a spacer adhering directly to a substrate
SG11201802939TA (en) * 2015-10-07 2018-05-30 Heptagon Micro Optics Pte Ltd Molded circuit substrates
US20170219793A1 (en) * 2016-01-28 2017-08-03 AAC Technologies Pte. Ltd. Sealed module with glue guiding features and method for making same
EP3258493B1 (en) 2016-06-16 2021-01-27 ams AG System-on-chip camera with integrated light sensor(s) and method of producing a system-on-chip camera
US10461066B2 (en) * 2016-06-29 2019-10-29 Maxim Integrated Products, Inc. Structure and method for hybrid optical package with glass top cover
US10243111B2 (en) 2016-06-29 2019-03-26 Ams Sensors Singapore Pte. Ltd. Optoelectronic device subassemblies and methods of manufacturing the same
US10551596B2 (en) 2016-06-29 2020-02-04 Ams Sensors Singapore Pte. Ltd. Optical and optoelectronic assemblies including micro-spacers, and methods of manufacturing the same
US20180017741A1 (en) * 2016-07-15 2018-01-18 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
KR102396022B1 (ko) * 2017-03-16 2022-05-09 에베 그룹 에. 탈너 게엠베하 적어도 세 개의 기판들을 결합하기 위한 방법
CN107180843B (zh) * 2017-05-17 2020-02-18 京东方科技集团股份有限公司 一种封装面板、器件封装结构及其制备方法
JP2019046981A (ja) * 2017-09-01 2019-03-22 株式会社村田製作所 光センサ装置およびその製造方法
US11867968B2 (en) * 2017-09-12 2024-01-09 Ams Sensors Singapore Pte. Ltd. Wafer-level manufacture of micro-devices and related two-piece devices, in particular micro-optical systems
JP6925216B2 (ja) * 2017-09-28 2021-08-25 アズビル株式会社 光電センサ
CN109841748B (zh) * 2017-11-28 2021-05-07 群创光电股份有限公司 显示设备
US10811400B2 (en) * 2018-09-28 2020-10-20 Apple Inc. Wafer level optical module
US10636829B1 (en) * 2018-10-24 2020-04-28 Himax Technologies Limited Wafer-level optical structure
CN109375331B (zh) * 2018-11-21 2023-07-04 中国科学院上海技术物理研究所 一种多透镜阵列光轴垂直固化装置
CN110494969B (zh) 2019-06-27 2020-08-25 长江存储科技有限责任公司 在形成三维存储器器件的阶梯结构中的标记图案
CN110945660B (zh) * 2019-11-12 2024-01-23 深圳市汇顶科技股份有限公司 堆叠式的芯片、制造方法、图像传感器和电子设备
KR102387982B1 (ko) * 2020-03-05 2022-04-19 (주) 브로젠 라이다 모듈의 제조 방법
KR102312392B1 (ko) * 2020-03-05 2021-10-15 (주) 브로젠 라이다 모듈용 기판의 접합 방법
DE102020215033A1 (de) * 2020-11-30 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
US20220238593A1 (en) * 2021-01-28 2022-07-28 Samsung Electronics Co., Ltd. Lens array, image device including the same, and method of manufacturing the image device
CN115728914B (zh) * 2022-11-18 2024-07-19 厦门力鼎光电股份有限公司 一种光学成像镜头

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100073543A1 (en) * 2008-09-25 2010-03-25 Fuji Xerox Co., Ltd. Instruction system, instruction apparatus, and computer readable medium
US20110037887A1 (en) * 2009-08-13 2011-02-17 Samsung Electronics Co., Ltd. Wafer-level lens module and image pickup device including the same

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60149984A (ja) 1984-01-17 1985-08-07 Nissan Motor Co Ltd 距離測定装置
JPH05165037A (ja) * 1991-12-12 1993-06-29 Matsushita Electric Ind Co Ltd 液晶パネルの製造方法
US5368683A (en) 1993-11-02 1994-11-29 Xerox Corporation Method of fabricating ink jet printheads
US6096155A (en) 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
KR100277309B1 (ko) * 1997-06-13 2001-01-15 마찌다 가쯔히꼬 액정 표시 장치 및 그 제조 방법
JP2002521844A (ja) * 1998-07-27 2002-07-16 レヴェオ・インコーポレーテッド 多層集積回路のための三次元パッケージング技術
DE19908214B4 (de) 1999-02-25 2006-08-31 Siemens Ag Strahlungsemittierende Vorrichtung und Verfahren zum Erfassen eines Objektes oder einer Person in Innenraum eines Fahrzeugs
JP3697926B2 (ja) 1999-03-05 2005-09-21 セイコーエプソン株式会社 半導体装置の製造方法
US6324010B1 (en) * 1999-07-19 2001-11-27 Eastman Kodak Company Optical assembly and a method for manufacturing lens systems
JP2001252618A (ja) 2000-03-09 2001-09-18 Ricoh Co Ltd 部品締結方法
JP2002110852A (ja) 2000-10-03 2002-04-12 Ibiden Co Ltd 半導体パッケージ、及び半導体チップの接続構造
JP4618859B2 (ja) * 2000-10-10 2011-01-26 東レエンジニアリング株式会社 積層ウエハーのアライメント方法
US6458623B1 (en) * 2001-01-17 2002-10-01 International Business Machines Corporation Conductive adhesive interconnection with insulating polymer carrier
US20040012698A1 (en) * 2001-03-05 2004-01-22 Yasuo Suda Image pickup model and image pickup device
JP2002290842A (ja) * 2001-03-23 2002-10-04 Sanyo Electric Co Ltd 固体撮像素子の製造方法
US6826830B2 (en) * 2002-02-05 2004-12-07 International Business Machines Corporation Multi-layered interconnect structure using liquid crystalline polymer dielectric
CN100440544C (zh) 2002-09-17 2008-12-03 安特约恩股份有限公司 照相装置、制造照相装置的方法以及晶片尺度的封装
JP2004207644A (ja) * 2002-12-26 2004-07-22 Toto Ltd 静電チャック及びこれを用いた貼合わせ基板製造装置
JP2005026587A (ja) 2003-07-04 2005-01-27 Fujikura Ltd 多層基板用基材、多層基板およびその製造方法
JP4551638B2 (ja) * 2003-08-01 2010-09-29 富士フイルム株式会社 固体撮像装置の製造方法
WO2005041561A1 (en) * 2003-10-27 2005-05-06 Koninklijke Philips Electronics N.V. Camera module and manufacturing method for such a camera module
JP2006224193A (ja) 2005-02-15 2006-08-31 Olympus Corp 電子装置及び電子装置の製造方法
US7378724B2 (en) * 2005-03-24 2008-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Cavity structure for semiconductor structures
JP2007184680A (ja) * 2006-01-04 2007-07-19 Fujifilm Corp 固体撮像装置及びその製造方法
US20070284758A1 (en) * 2006-05-22 2007-12-13 General Electric Company Electronics package and associated method
WO2008045968A2 (en) 2006-10-10 2008-04-17 Adco Products, Inc. Radiation curable sealant composition
JP2009016534A (ja) * 2007-07-04 2009-01-22 Tokyo Electron Ltd 貼り合せ方法及び貼り合せ用基板
KR100959922B1 (ko) * 2007-11-20 2010-05-26 삼성전자주식회사 카메라 모듈 및 그 제조방법
TW200937642A (en) * 2007-12-19 2009-09-01 Heptagon Oy Wafer stack, integrated optical device and method for fabricating the same
KR100969987B1 (ko) * 2008-01-10 2010-07-15 연세대학교 산학협력단 광학패키지 웨이퍼스케일 어레이 및 그 제조방법
EP2318804B1 (en) 2008-04-17 2017-03-29 Shilat Optronics Ltd Intrusion warning system
US8866920B2 (en) * 2008-05-20 2014-10-21 Pelican Imaging Corporation Capturing and processing of images using monolithic camera array with heterogeneous imagers
US8828174B2 (en) 2008-08-20 2014-09-09 Heptagon Micro Optics Pte. Ltd. Method of manufacturing a plurality of optical devices
JP4768060B2 (ja) * 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP4764942B2 (ja) * 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP4764941B2 (ja) 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
TW201015727A (en) * 2008-10-07 2010-04-16 Nexpower Technology Corp Thin-film solar cell
JP4832500B2 (ja) * 2008-12-01 2011-12-07 シャープ株式会社 電子素子ウエハモジュールの製造方法および光学素子ウエハモジュールの製造方法
EP2264898B1 (en) 2009-06-17 2013-05-22 OSRAM Opto Semiconductors GmbH Optical proximity sensor
JP2011113075A (ja) * 2009-11-30 2011-06-09 Fujifilm Corp ウェハレベルレンズの製造方法
WO2011156928A2 (en) * 2010-06-14 2011-12-22 Heptagon Oy Camera, and method of manufacturing a plurality of cameras
JP5533339B2 (ja) 2010-06-28 2014-06-25 ソニー株式会社 光電変換装置とそのパッケージ構造、並びに光電変換装置の製造方法
US8805302B2 (en) 2011-05-19 2014-08-12 Apple Inc. Proximity and ambient light sensor with improved smudge rejection
US9030832B2 (en) 2011-08-31 2015-05-12 Apple Inc. Proximity sensor for electronic device
US9595553B2 (en) * 2012-11-02 2017-03-14 Heptagon Micro Optics Pte. Ltd. Optical modules including focal length adjustment and fabrication of the optical modules

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100073543A1 (en) * 2008-09-25 2010-03-25 Fuji Xerox Co., Ltd. Instruction system, instruction apparatus, and computer readable medium
US20110037887A1 (en) * 2009-08-13 2011-02-17 Samsung Electronics Co., Ltd. Wafer-level lens module and image pickup device including the same

Also Published As

Publication number Publication date
JP2015519751A (ja) 2015-07-09
JP6437590B2 (ja) 2018-12-12
CN107845650A (zh) 2018-03-27
JP2017199912A (ja) 2017-11-02
TW201405764A (zh) 2014-02-01
SG11201407221TA (en) 2014-12-30
KR102107575B1 (ko) 2020-05-08
KR102208832B1 (ko) 2021-01-29
WO2013172786A1 (en) 2013-11-21
US10903197B2 (en) 2021-01-26
CN107845650B (zh) 2021-10-26
US20180261585A1 (en) 2018-09-13
SG10201701879RA (en) 2017-04-27
JP6151354B2 (ja) 2017-06-21
KR20150013780A (ko) 2015-02-05
KR20200049894A (ko) 2020-05-08
US20170309605A1 (en) 2017-10-26
EP2850654A1 (en) 2015-03-25
US9997506B2 (en) 2018-06-12
US20150115413A1 (en) 2015-04-30
CN104335340A (zh) 2015-02-04
US9716081B2 (en) 2017-07-25
CN104335340B (zh) 2017-11-03
EP2850654B1 (en) 2016-10-26
EP2850654A4 (en) 2015-11-04

Similar Documents

Publication Publication Date Title
TWI640080B (zh) 晶圓堆疊之組裝
US11005001B2 (en) Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
JP6328813B2 (ja) リフロー可能な光電子モジュール
US9786820B2 (en) Opto-electronic module and method for manufacturing the same
TWI591753B (zh) 用於固持一晶圓或晶圓子堆疊之真空吸頭之使用
TWI850304B (zh) 包括光發射器及光接收器之光電模組