TWI635199B - 單晶矽的製造方法 - Google Patents
單晶矽的製造方法 Download PDFInfo
- Publication number
- TWI635199B TWI635199B TW106105220A TW106105220A TWI635199B TW I635199 B TWI635199 B TW I635199B TW 106105220 A TW106105220 A TW 106105220A TW 106105220 A TW106105220 A TW 106105220A TW I635199 B TWI635199 B TW I635199B
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- magnetic field
- oxygen concentration
- wafer
- diameter
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016127283A JP6680108B2 (ja) | 2016-06-28 | 2016-06-28 | シリコン単結晶の製造方法 |
JP2016-127283 | 2016-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201800626A TW201800626A (zh) | 2018-01-01 |
TWI635199B true TWI635199B (zh) | 2018-09-11 |
Family
ID=60786799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106105220A TWI635199B (zh) | 2016-06-28 | 2017-02-17 | 單晶矽的製造方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP6680108B2 (ja) |
KR (1) | KR102157389B1 (ja) |
CN (1) | CN109415843B (ja) |
DE (1) | DE112017003224B4 (ja) |
TW (1) | TWI635199B (ja) |
WO (1) | WO2018003167A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI767586B (zh) * | 2020-12-30 | 2022-06-11 | 大陸商上海新昇半導體科技有限公司 | 拉晶方法和拉晶裝置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7249913B2 (ja) * | 2019-08-28 | 2023-03-31 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶の製造方法 |
CN115404541B (zh) * | 2022-10-18 | 2023-08-25 | 四川晶科能源有限公司 | 一种拉晶方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09235192A (ja) * | 1996-03-01 | 1997-09-09 | Mitsubishi Materials Shilicon Corp | 低酸素濃度単結晶インゴット及び単結晶引上方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0244799B2 (ja) | 1981-10-26 | 1990-10-05 | Sony Corp | Ketsushoseichohoho |
US5178720A (en) * | 1991-08-14 | 1993-01-12 | Memc Electronic Materials, Inc. | Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates |
JPH06172080A (ja) * | 1992-12-02 | 1994-06-21 | Kawasaki Steel Corp | 単結晶の引上方法 |
JP3520883B2 (ja) | 1995-12-29 | 2004-04-19 | 信越半導体株式会社 | 単結晶の製造方法 |
JP3601340B2 (ja) | 1999-02-01 | 2004-12-15 | 信越半導体株式会社 | エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板 |
JP4484540B2 (ja) * | 2004-02-19 | 2010-06-16 | Sumco Techxiv株式会社 | 単結晶半導体の製造方法 |
CN1332072C (zh) * | 2005-01-20 | 2007-08-15 | 上海合晶硅材料有限公司 | 直拉硅单晶中低氧控制方法 |
KR100840751B1 (ko) * | 2005-07-26 | 2008-06-24 | 주식회사 실트론 | 고품질 실리콘 단결정 잉곳 제조 방법, 성장 장치 및그로부터 제조된 잉곳 , 웨이퍼 |
KR100746374B1 (ko) | 2005-12-20 | 2007-08-03 | 주식회사 실트론 | 결정 성장 조건의 예측방법 및 이를 이용한 단결정 잉곳성장방법 |
JP5056603B2 (ja) * | 2008-06-11 | 2012-10-24 | 株式会社Sumco | シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ |
JP2010100474A (ja) * | 2008-10-23 | 2010-05-06 | Covalent Materials Corp | シリコン単結晶引上げ水平磁場の最適化方法およびシリコン単結晶の製造方法 |
KR101472349B1 (ko) * | 2013-05-21 | 2014-12-12 | 주식회사 엘지실트론 | 반도체용 실리콘 단결정 잉곳 및 웨이퍼 |
JP5921498B2 (ja) | 2013-07-12 | 2016-05-24 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶の製造方法 |
CN105239154A (zh) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | 提拉法单晶硅生长流场控制技术 |
DE102015226399A1 (de) | 2015-12-22 | 2017-06-22 | Siltronic Ag | Siliciumscheibe mit homogener radialer Sauerstoffvariation |
-
2016
- 2016-06-28 JP JP2016127283A patent/JP6680108B2/ja active Active
-
2017
- 2017-02-17 TW TW106105220A patent/TWI635199B/zh active
- 2017-02-23 CN CN201780040672.7A patent/CN109415843B/zh active Active
- 2017-02-23 WO PCT/JP2017/006782 patent/WO2018003167A1/ja active Application Filing
- 2017-02-23 KR KR1020187030618A patent/KR102157389B1/ko active IP Right Grant
- 2017-02-23 DE DE112017003224.5T patent/DE112017003224B4/de active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09235192A (ja) * | 1996-03-01 | 1997-09-09 | Mitsubishi Materials Shilicon Corp | 低酸素濃度単結晶インゴット及び単結晶引上方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI767586B (zh) * | 2020-12-30 | 2022-06-11 | 大陸商上海新昇半導體科技有限公司 | 拉晶方法和拉晶裝置 |
Also Published As
Publication number | Publication date |
---|---|
JP6680108B2 (ja) | 2020-04-15 |
WO2018003167A1 (ja) | 2018-01-04 |
KR102157389B1 (ko) | 2020-09-17 |
CN109415843B (zh) | 2024-08-13 |
CN109415843A (zh) | 2019-03-01 |
DE112017003224B4 (de) | 2021-09-30 |
TW201800626A (zh) | 2018-01-01 |
KR20180124975A (ko) | 2018-11-21 |
DE112017003224T5 (de) | 2019-03-21 |
JP2018002496A (ja) | 2018-01-11 |
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