TWI635199B - Manufacturing method of single crystal silicon - Google Patents

Abstract

According to the predetermined conditions, the diameter (D) of the single crystal (C) when pulled up by the CZ method, the horizontal magnetic field strength (G) applied to the melt (M), and the single crystal (C) when pulled up are obtained in advance The correlation between the crystal rotation speed (V) and the distribution characteristic (δ) of the oxygen concentration at the outer periphery of the wafer; from the limit value of the distribution characteristic of the oxygen concentration at the outer periphery of the wafer, the horizontal magnetic field strength The limit value, the limit value of the crystal rotation speed of the single crystal at the time of the pull-up, and the correlation relationship are obtained, and the minimum diameter of the single crystal at the time of the pull-up is obtained; using the obtained minimum diameter as the target diameter, the predetermined Under the manufacturing conditions, manufacturing single crystal silicon.

Description

Method for manufacturing single crystal silicon

The invention relates to a method for manufacturing single crystal silicon.

There is a proposal to apply the Tchaisky method (HMCZ method) under a horizontal magnetic field to facilitate the generation of convection by the surface of the melt in the crucible, suppress the convection at the bottom of the crucible, and make oxygen in the direction of the crystal growth axis. The concentration distribution is uniform (Patent Document 1).

Advanced technical literature

Patent Document 1: Japanese Patent Laid-Open No. 9-188590

In addition, the oxygen concentration in the range of about 10 mm inward from the outer peripheral end portion of the wafer (hereinafter also referred to as the outer peripheral portion) may be lower than in other central portions. Such an outer peripheral portion becomes a main cause of a defect in the manufacturing process of the device. Therefore, in order to improve the yield of the device, the uniformity of the oxygen concentration up to the outer peripheral portion is pursued.

The problem to be solved by the present invention is to provide a method for manufacturing single crystal silicon, which can make the concentration of oxygen on the wafer surface uniform to the outer periphery while minimizing the manufacturing cost of single crystal silicon.

In the first aspect of the invention, the diameter of the single crystal at the time of pulling up, the horizontal magnetic field strength and the crystal rotation speed of the single crystal, and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer are determined in advance based on predetermined manufacturing conditions Related relationship The permissible distribution characteristics of the oxygen concentration on the outer periphery of the wafer, the limit value of the horizontal magnetic field strength and the limit value of the crystal rotation speed of the single crystal, and the correlation, and the diameter of the single crystal at the time of pulling up is obtained; Under the predetermined manufacturing conditions, single crystal silicon of the determined diameter is manufactured. With this, the above-mentioned problems are solved.

According to the second aspect of the invention, the diameter of the single crystal at the time of pulling up, the horizontal magnetic field strength, the crystal rotation speed of the single crystal, and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer are determined in advance based on predetermined manufacturing conditions Correlation; from the distribution characteristic of the allowable oxygen concentration at the outer periphery of the wafer, the limit value of the diameter of the single crystal during the pull-up, the limit value of the crystal rotation speed of the single crystal during the pull-up, and the Correlation relationship, the horizontal magnetic field strength to be applied is obtained; under the determined horizontal magnetic field strength and the predetermined manufacturing conditions, a single crystal is manufactured. With this, the above-mentioned problems are solved.

According to the invention of the third aspect, the diameter of the single crystal at the time of pulling up, the horizontal magnetic field strength, the crystal rotation speed of the single crystal, and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer are determined in advance based on predetermined manufacturing conditions Correlation; from the distribution characteristics of the allowable oxygen concentration at the outer periphery of the wafer, the limit value of the single crystal at the time of pulling up, the limit value of the horizontal magnetic field strength, and the correlation Crystal rotation speed; under the determined crystal rotation speed and the predetermined manufacturing conditions, a single crystal is manufactured. With this, the above-mentioned problems are solved.

Although not particularly limited, in the inventions of the first to third aspects described above, the diameter of the single crystal at the time of pulling up is assumed to be D (mm), the strength of the horizontal magnetic field is assumed to be G (Gaussian), and at the time of pulling up The crystal rotation speed of the single crystal is assumed to be V (rpm), the distribution characteristic of the oxygen concentration on the outer periphery of the wafer is assumed to be δ (10 ¹⁷ atoms / cm ³ ), and a, b, c, d are assumed to be constant , The above correlation is defined by the expression δ = aD + bG + cV + d, and it is better to obtain the constants a, b, c, and d in advance under the predetermined manufacturing conditions.

According to the invention of the first aspect, the correlation between the horizontal magnetic field strength, the crystal rotation of the single crystal, the distribution characteristics of the oxygen concentration at the outer periphery of the wafer, and the diameter of the pulled single crystal is obtained in advance to produce a single crystal When crystallizing, the minimum value of the single crystal to be pulled is obtained from the limit value of the distribution characteristic of the oxygen concentration on the outer periphery of the wafer, the limit value of the horizontal magnetic field strength, the limit value of the crystal rotation speed of the single crystal, and the correlation diameter of. By this, the diameter of the single crystal pulled up becomes the smallest, so the production cost of the single crystal silicon can be suppressed to the minimum. In addition, the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is maintained at the limit value, so that the oxygen concentration on the wafer surface can be made uniform.

According to the invention of the second aspect, the correlation between the horizontal magnetic field strength, the crystal rotation of the single crystal, the distribution characteristic of the oxygen concentration at the outer periphery of the wafer, and the diameter of the pulled single crystal is obtained in advance to produce a single crystal When crystallizing, the limit value of the distribution characteristic of the oxygen concentration at the outer periphery of the wafer, the limit value of the diameter of the single crystal to be pulled up, the limit value of the crystal rotation speed of the single crystal, and the correlation relationship are obtained Horizontal magnetic field strength. By this, the diameter of the single crystal pulled up becomes the smallest, so the production cost of the single crystal silicon can be suppressed to the minimum. In addition, the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is maintained at the limit value, so that the oxygen concentration on the wafer surface can be made uniform.

According to the invention of the third aspect, the correlation between the horizontal magnetic field strength, the crystal rotation of the single crystal, the distribution characteristics of the oxygen concentration at the outer periphery of the wafer, and the diameter of the pulled single crystal is obtained in advance to produce a single crystal During the crystal, from the limit value of the distribution characteristic of the oxygen concentration on the outer periphery of the wafer, the limit of the diameter of the single crystal to be pulled Value, the limit value of the horizontal magnetic field strength, and the correlation, the crystal rotation speed of the single crystal is obtained. By this, the diameter of the single crystal pulled up becomes the smallest, so the production cost of the single crystal silicon can be suppressed to the minimum. In addition, the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is maintained at the limit value, so that the oxygen concentration on the wafer surface can be made uniform.

1‧‧‧Single crystal silicon manufacturing equipment

11‧‧‧ First chamber

12‧‧‧ 2nd chamber

13‧‧‧Gas inlet

14‧‧‧ gas outlet

21‧‧‧Crucible made of quartz

22‧‧‧Graphite crucible

23‧‧‧Support shaft

24‧‧‧Drive mechanism

25‧‧‧heater

26‧‧‧Insulation tube

27‧‧‧heat shielding member

28‧‧‧Bracket

31‧‧‧ line

32‧‧‧Pulling mechanism

41‧‧‧ magnetic field generating device

C‧‧‧Single crystal silicon

M‧‧‧silicon melt

S‧‧‧ Seed crystal

FIG. 1 is a cross-sectional view showing an example of a manufacturing apparatus to which the method for manufacturing single crystal silicon of the present invention is applied.

FIG. 2 shows an example of the relationship between the horizontal magnetic field strength of the manufacturing apparatus shown in FIG. 1 and the oxygen concentration distribution characteristics on the outer periphery of the wafer.

FIG. 3 shows an example of the relationship between the crystal rotation of the single crystal of the manufacturing apparatus shown in FIG. 1 and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer.

FIG. 4 shows an example of the relationship between the position of the diameter method of the single crystal silicon wafer manufactured by the manufacturing apparatus shown in FIG. 1 and the oxygen concentration.

FIG. 5 shows an example of the relationship between the diameter of the single crystal pulled up by the manufacturing apparatus shown in FIG. 1 and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer.

Hereinafter, an embodiment of the present invention will be described based on the drawings. FIG. 1 is a cross-sectional view showing an example of a manufacturing apparatus to which the method for manufacturing single crystal silicon of the present invention is applied. A single crystal silicon manufacturing apparatus 1 (hereinafter simply referred to as manufacturing apparatus 1) to which the manufacturing method of the present embodiment is applied includes a cylindrical first chamber 11 and an identical cylindrical second chamber 12, which are airtight地 连接。 Ground connection.

Inside the first chamber 11, a crucible made of quartz containing the silicon melt M The crucible 21 and the crucible 22 made of graphite that protects the crucible 21 made of quartz are supported by the support shaft 23 and are rotated or moved up and down by the drive mechanism 24. In addition, a ring-shaped heater 25 and a ring-shaped heat insulating tube 26 composed of a heat insulating material are also arranged so as to surround the crucible 21 made of quartz and the crucible 22 made of black lead. A heater is added below the crucible 21.

Inside the first chamber 11, a cylindrical heat shield member 27 is provided above the crucible 21 made of quartz. The heat shielding member 27 is composed of equivalent metal such as molybdenum, tungsten, or carbon, blocks radiation from the silicon melt M to the single crystal silicon C, and rectifies the gas in the first chamber 11. The heat shielding member 27 is fixed to the heat preservation tube 26 through the bracket 28. The lower end of the heat shielding member 27 may be provided with a heat shielding portion that is opposed to the entire surface of the silicon melt M, blocks radiation from the surface of the silicon melt M, and keeps the surface of the silicon melt M insulated.

The second chamber 12 connected to the upper portion of the first chamber 11 is a chamber for accommodating the grown single crystal silicon C and taking it out. A pull-up mechanism 32 is provided on the upper part of the second chamber 12 to pull up the single-crystal silicon while rotating with the wire 31. The seed crystal S is attached to the chuck at the lower end of the wire 31 hanging from the pulling mechanism 32. Inert gas such as argon gas is introduced from the gas inlet 13 provided in the upper part of the first chamber 11. After this inactive gas is pulled up between the single crystal silicon C and the heat shielding member 27, it passes between the lower end of the heat shielding member 27 and the molten surface of the silicon melt M, and then to the upper end of the crucible 21 made of quartz After being raised, it is discharged from the gas discharge port 14.

Outside the first chamber 11 (composed of a non-magnetic material), a magnetic field generating device 41 surrounding the first chamber 11 is arranged to apply a magnetic field to the melt M in a crucible 21 made of quartz. The magnetic field generating device 41 is a device that generates a horizontal magnetic field toward a crucible 21 made of quartz, and is composed of an electromagnetic coil. The magnetic field generating device 41 will control The convection of heat generated by the molten metal M in the crucible 21 in the inch system stabilizes the crystal growth and suppresses fine unevenness in the distribution of impurities in the crystal growth direction. Especially in the case of manufacturing large-diameter single crystal silicon, the effect is greater. In addition, the magnetic field strength shown below is the value measured at the center position of the liquid surface of the solution M in the crucible 21 made of quartz.

Using the manufacturing apparatus 1 of this embodiment mode, if single crystal silicon is to be grown by the CZ method, first, a crucible 21 made of quartz is filled with polycrystalline silicon and silicon raw materials added with dopants as necessary, and the heater 25 is turned on. The silicon raw material is melted in the crucible 21 made into silicon melt M. Next, the magnetic field generating device 41 is turned on to start applying a horizontal magnetic field to the crucible 21 made of quartz, while raising the temperature of the silicon melt M to adjust the temperature to the starting temperature. When the temperature and the magnetic field strength of the silicon melt M are stable, the inert gas is introduced from the gas inlet 13 and discharged from the gas discharge port 14 while the crucible 21 made of quartz is rotated at a predetermined speed by the drive mechanism 24, The seed crystal S of the wire 31 is immersed in the silicon melt. Then, the wire 31 is slowly pulled up while rotating at a predetermined speed to form a shrinkage seed, and then the diameter is increased to a desired diameter to grow a single-crystal silicon C having a straight cylindrical portion with a slightly cylindrical shape.

As the single crystal silicon C is pulled up, the liquid level of the silicon melt M of the quartz crucible 21 drops, including the application of the horizontal magnetic field from the magnetic field generating device 41 to the quartz crucible 21, and the conditions of the hot zone vary. In order to suppress this change in the liquid level conditions, the vertical height of the liquid level of the silicon melt M during the pulling of the single crystal silicon C is controlled by the drive mechanism 24 to a certain value. The control of this drive mechanism 24 may, for example, be in accordance with the position of the crucible 21, the position of the liquid surface of the silicon melt M measured by a CCD camera, etc., the pulling length of the single crystal silicon C, the temperature in the first chamber 11, the silicon Information such as the surface temperature of the molten metal M, the flow rate of inert gas, etc. is performed, and the crucible made of quartz The vertical position of the crucible 21 is moved by the driving mechanism 24.

In addition, for example, when manufacturing a 300 mm wafer, the pull-up diameter of the single crystal silicon C is set to a predetermined value slightly larger than 300 mm in consideration of inconsistency. FIG. 4 shows an example of the distribution characteristics of the oxygen concentration in the wafer state of the single crystal silicon C manufactured in this way. The horizontal axis shows the position in the diameter direction with the wafer center at 0, and the vertical axis shows the oxygen concentration (× 10 ¹⁷ atoms / cm ³ ). In addition, all the oxygen concentrations mentioned in this specification are measured values by the FT-IR method (Fourier transform infrared spectrophotometry) standardized in ASTM F-121 (1979). In addition, the outer peripheral portion of the wafer referred to in this specification refers to the area from the outer peripheral end of the wafer to the inner side of 10 mm. In the following example, the decrease in the oxygen concentration at the outer periphery of the wafer will be shown in Figures 2, 3, and 5 from the outer end to the inside 5mm, but this is only a representative example of the outer periphery of the wafer. It is not limited to the position of 5 mm. According to this example, the oxygen concentration at the outer peripheral portion of the wafer is lower by about 0.5 × 10 ¹⁷ atoms / cm ³ than other portions. As the diameter of the wafer becomes larger, a horizontal magnetic field is applied to control the thermal convection generated by the silicon melt M in the quartz crucible 21, thereby improving the controllability of the pull-up diameter. It is difficult to perform stirring, and the melt of the surface layer evaporated by oxygen is sucked into the outer periphery of the crystal, so that the oxygen concentration in the outer periphery of the crystal is easily reduced.

Therefore, when the horizontal magnetic field intensity of the magnetic field generating device 41 is reduced, the decrease in the oxygen concentration in the outer peripheral portion of the wafer can be suppressed. However, if the horizontal magnetic field intensity of the magnetic field generating device 41 is reduced, the controllability of the heat convection generated by the silicon melt M in the quartz crucible 21 decreases, so the controllability of the pull-up speed decreases. Furthermore, if the horizontal magnetic field strength of the magnetic field generating device 41 is reduced, the controllability of the heat convection generated by the silicon melt M in the crucible 21 made of quartz decreases Low, so the oxygen concentration rises. Therefore, even if the horizontal magnetic field strength is decreased, there is a certain limit value.

In addition, when increasing the crystal rotation speed of the single crystal silicon C at the time of pulling up (refers to the speed at which the single crystal silicon C is rotated by the line 31 alone, it is not a relative rotation speed including the rotation speed of the crucible 21 made of quartz), It is possible to suppress the decrease in the oxygen concentration in the outer peripheral portion of the wafer. However, when the crystal rotation speed of the single crystal silicon C at the time of pulling up is increased, the single crystal silicon C bends. In addition, when the crystal rotation speed of the single crystal silicon C at the time of pulling up is increased, the oxygen concentration increases. Therefore, even if the crystal rotation speed of the single crystal silicon C at the time of pulling up is increased, there is a certain limit value.

In addition, the diameter of the pulled single crystal silicon is set to a minimum value considering the unevenness of the diameter caused by the uneven control of the pulling speed, etc. If this diameter is increased, the amount of waste increases and the manufacturing yield decline. In addition, the size of the quartz crucible 21 and the like of the manufacturing apparatus 1 is also limited. Therefore, even if the diameter of the single-crystal silicon C when it is pulled up is increased, there is a certain limit value.

Therefore, the inventors verified the correlation between the crystal rotation speed and the diameter of the single-crystal silicon C with respect to the distribution characteristics of the oxygen concentration in the outer periphery of the crystal.

FIG. 2 shows an example of the relationship between the horizontal magnetic field strength and the oxygen concentration distribution characteristic at the outer periphery of the wafer when the single crystal silicon C is manufactured under predetermined conditions using the manufacturing apparatus 1 shown in FIG. 1. The horizontal axis shows the horizontal magnetic field strength of the magnetic field generating device 41 (Gaussian, G, large on the right side, small on the left side), and the vertical axis shows the position 5 mm from the outer peripheral end of the wafer toward the center (hereinafter also referred to as In5), and Similarly, the oxygen concentration difference (Oi [In10] -Oi [In5], 10 ¹⁷ atoms / cm ³ ) from the outer peripheral end of the wafer toward the center 10 mm (hereinafter also referred to as In10). As mentioned above, it can be known that if the horizontal magnetic field strength is reduced, the difference in oxygen concentration will approach zero.

Fig. 3 shows the crystal rotation speed of the single crystal (referred to as the rotation speed of the single crystal C itself) and the outer periphery of the wafer when the single crystal silicon C is manufactured under predetermined conditions using the manufacturing apparatus 1 shown in Fig. 1 An example of the relationship between the oxygen concentration distribution characteristics of the part. The horizontal axis shows the rotation speed of the single crystal (rpm, the right side shows large, the left side shows small), and the vertical axis shows the same oxygen concentration difference as in Figure 2 (Oi [In10] -Oi [In5], 10 ¹⁷ atoms / cm ³ ) . As described above, it can be known that when the crystal rotation speed is increased, the difference in oxygen concentration becomes close to zero.

FIG. 4 is an example of the distribution characteristics of the oxygen concentration in the wafer state of the single crystal silicon C when the 300 mm wafer is manufactured as described above. Fig. 5 uses the results shown in Fig. 4 to assume that the oxygen concentration distribution characteristic (oxygen behavior) of the outer diameter of the drawn diameter is not affected by the diameter and does not change, and the oxygen concentration when the diameter is increased is estimated. The horizontal axis shows the diameter of the single crystal set when it is pulled up (mm, the right side indicates large, the left side indicates small), and the vertical axis indicates the same oxygen concentration difference as in Figures 2 and 3 (Oi [In10] -Oi [In5] , 10 ¹⁷ atoms / cm ³ ). As described above, it is known that when the diameter of the single crystal at the time of pulling up is increased, the difference in oxygen concentration becomes close to zero.

From the results of Figure 2 to Figure 5, the distribution characteristics of the oxygen concentration in the outer periphery of the crystal (Oi [In10] -Oi [In5], 10 ¹⁷ atoms / cm ³ ), the horizontal magnetic field strength, and the rotation of the single crystal silicon C The speed and the diameter are related, so the inventors assume that the diameter of the single crystal when it is pulled up is D (mm), the horizontal magnetic field strength is G (Gaussian), and the crystal rotation speed of the single crystal when it is pulled up. V (rpm), assuming that the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is δ (10 ¹⁷ atoms / cm ³ ), assuming a, b, c, and d are constants, the following correlation formula is defined: [Number 1] δ = aD + bG + cV + d… (Equation 1)

The constants a, b, c, and d correspond to the weight of the horizontal magnetic field strength, the rotation speed and diameter of the single crystal silicon.

Then, the constants a, b, c, and d are obtained in advance under the predetermined manufacturing conditions of the manufacturing device 1 for each single crystal silicon, and the limit value of the distribution characteristic δ of the oxygen concentration at the outer periphery of the wafer (may also be Allowable value), the limit value of the horizontal magnetic field strength, and the limit value of the crystal rotation speed of the single crystal at the time of pulling are substituted into the above formula 1, and the diameter D (= (δ-bG-cV-d) of the single crystal silicon obtained / a), set to the diameter of the single crystal silicon C to be pulled up.

Here, the limit value (permissible value) of the distribution characteristic δ of the oxygen concentration on the outer periphery of the wafer refers to the maximum value of the distribution value (falling value) of the oxygen concentration that is allowed on the outer periphery of the wafer as a product , Is the product shipping standard set according to the device, etc. For example, Oi [In10] -Oi [In5] = 0.5 × 10 ¹⁷ atoms / cm ³ . In addition, the limit value of the horizontal magnetic field strength refers to the lower limit value considering the controllability of the pull-up speed or the increase in oxygen concentration as described above, and each time for each manufacturing device 1 of single crystal silicon based on empirical values or simulations Manufacturing condition setting. For example, 2000G, 3000G, or 4000G. In addition, the limit value of the crystal rotation speed of the single crystal at the time of pulling up refers to the upper limit value considering the bending or the increase in the oxygen concentration, and each time for each single crystal silicon manufacturing apparatus 1 based on empirical values or simulations Manufacturing condition setting. For example, 8 rpm, 9 rpm, 10 rpm, 12 rpm, or 15 rpm.

By regression analysis of the examples shown in Figures 2 to 5, find the constants a, b, c, and d in Equation 1, as follows: [Number 2] δ = -0.0166D + 0.0005G-0.4836V + 8.1984… (Formula 2)

In the above formula 2, the limit value (permissible value) of the distribution characteristic δ of the oxygen concentration on the outer periphery of the wafer is set to 0.1 × 10 ¹⁷ atoms / cm ³ , and the limit value of the horizontal magnetic field strength is set to 2500G. The limit value of the crystal rotation speed of the single crystal was substituted into the above Equation 2 at 8 rpm, and the diameter D of the single crystal silicon was determined to be 330 mm. When single-crystal silicon is manufactured with this diameter D as the set value, a crystal ingot can be obtained, which satisfies the distribution characteristic of the oxygen concentration at the outer periphery of the wafer at 0.5 × 10 ¹⁷ atoms / cm ³ or less, and the controllability of the pull-up speed is good , The increase in oxygen concentration or bending is suppressed, and the amount of the outer peripheral portion discarded when processed to a predetermined diameter becomes minimum.

In the above example, the limit value of the distribution characteristic δ of the oxygen concentration at the outer periphery of the wafer, the limit value of the horizontal magnetic field strength, and the limit value of the crystal rotation speed of the single crystal at the time of pulling are substituted into Equation 2 to obtain The diameter D of the single crystal silicon is obtained, but in addition to this, the limit value of the distribution characteristic δ of the oxygen concentration at the outer periphery of the wafer, the limit value of the diameter of the single crystal silicon, and the single crystal at the time of pulling up The limit value of the rotation speed of the crystal is substituted into Equation 2, whereby the horizontal magnetic field strength is obtained, and the determined horizontal magnetic field strength is set to manufacture single crystal silicon. Or in addition to this, the limit value of the distribution characteristic δ of the oxygen concentration at the outer periphery of the wafer, the limit value of the diameter of the single crystal silicon, and the limit value of the horizontal magnetic field strength may also be substituted into Equation 2 to thereby The crystal rotation speed of the single crystal at the time of pulling is obtained, and the obtained crystal rotation speed is set to produce single crystal silicon.

Claims (4)

A method of manufacturing single crystal silicon, including: through regression analysis, according to predetermined conditions, the diameter of the single crystal when pulled up by the CZ method, the horizontal magnetic field strength applied to the melt, and the single crystal when pulled up are obtained in advance The relationship between the crystal rotation speed and the distribution characteristic of the oxygen concentration at the outer periphery of the wafer; by using the limit value of the distribution characteristic of the oxygen concentration at the outer periphery of the wafer, the limit value of the horizontal magnetic field strength, the The limit value of the crystal rotation speed of the single crystal at the time of pull-in is substituted into this relational formula to obtain the minimum diameter of the single crystal at the time of pull-up; using the obtained minimum diameter as the target diameter, under the given manufacturing conditions, Manufacturing of monocrystalline silicon. A method of manufacturing single crystal silicon, including: through regression analysis, according to predetermined conditions, the diameter of the single crystal when pulled up by the CZ method, the horizontal magnetic field strength applied to the melt, and the single crystal when pulled up are obtained in advance The relationship between the crystal rotation speed and the distribution characteristic of the oxygen concentration at the outer periphery of the wafer; by limiting the distribution characteristic of the oxygen concentration at the outer periphery of the wafer and the diameter of the single crystal at the time of pulling up The limit value of the crystalline rotation speed of the single crystal at the time of pulling is substituted into the relational expression to obtain the horizontal magnetic field strength to be applied; under the determined horizontal magnetic field strength and the predetermined manufacturing conditions, the manufacturing order crystal. A method of manufacturing single crystal silicon, including: through regression analysis, according to predetermined conditions, the diameter of the single crystal when pulled up by the CZ method, the horizontal magnetic field strength applied to the melt, and the single crystal when pulled up are obtained in advance The relationship between the crystal rotation speed and the distribution characteristic of the oxygen concentration at the outer periphery of the wafer; by limiting the distribution characteristic of the oxygen concentration at the outer periphery of the wafer and the diameter of the single crystal at the time of pulling up The limit value of, and the limit value of the horizontal magnetic field strength are substituted into the relational expression to obtain the crystal rotation speed of the single crystal at the time of pulling up; under the determined crystal rotation speed and the predetermined manufacturing conditions, the single crystal is manufactured. The method for manufacturing single crystal silicon according to any one of items 1 to 3 of the patent application range, wherein: the diameter of the single crystal when pulled up is assumed to be D (mm), and the horizontal magnetic field strength is assumed to be G (Gaussian) ), Assuming that the crystal rotation speed of the single crystal at the time of pulling is V (rpm), the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is assumed to be δ (10 ¹⁷ atoms / cm ³ ), and a, b When c and d are constants, the relationship is defined by the regression analysis formula δ = aD + bG + cV + d, and the constants a, b, c, and d are obtained in advance under the predetermined manufacturing conditions.