KR101862157B1 - Method and apparatus for manufacturing silicon monocrystalline ingot - Google Patents

Method and apparatus for manufacturing silicon monocrystalline ingot Download PDF

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KR101862157B1
KR101862157B1 KR1020160148655A KR20160148655A KR101862157B1 KR 101862157 B1 KR101862157 B1 KR 101862157B1 KR 1020160148655 A KR1020160148655 A KR 1020160148655A KR 20160148655 A KR20160148655 A KR 20160148655A KR 101862157 B1 KR101862157 B1 KR 101862157B1
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single crystal
crystal silicon
silicon ingot
melt
crucible
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KR1020160148655A
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KR20180051827A (en
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정호섭
송도원
이성찬
강인구
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에스케이실트론 주식회사
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Priority to PCT/KR2017/001166 priority patent/WO2018088633A1/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method of manufacturing a single crystal silicon ingot according to an embodiment wherein a single crystal silicon ingot is produced from a melt contained in a crucible is characterized in that at least one of the strength of a horizontal magnetic field applied to the melt, the first rotational speed of the single crystal silicon ingot, Obtaining information indicating the convection characteristic of the melt, obtaining an oxygen concentration gradient in the radial direction of the single crystal silicon ingot by using the obtained information, and calculating a gradient of oxygen concentration in the radial direction of the single crystal silicon ingot, Varying at least one of the intensity of the horizontal magnetic field, the second rotational speed of the single crystal silicon ingot, or the temperature characteristic.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method and apparatus for manufacturing a single crystal silicon ingot,

Embodiments relate to a method and apparatus for producing a single crystal silicon ingot.

In general, as a method of manufacturing a silicon wafer, a Floating Zone (FZ) method or a CZ (CZochralski) method is widely used. In the case of growing a single crystal silicon ingot by applying the FZ method, it is difficult to manufacture a large diameter silicon wafer, and there is a problem in that the process cost is very high. Therefore, it is general to grow a single crystal silicon ingot according to the CZ method.

According to the CZ method, polycrystalline silicon is charged into a quartz crucible, the graphite heating body is heated to melt it, and then seed crystals are immersed in the silicon melt formed as a result of melting and crystallization occurs at the interface of the melt, So that the single crystal silicon ingot is grown. Thereafter, the grown single crystal silicon ingot is sliced, etched and polished into a wafer shape.

The interstitial oxygen interstitials incorporated in the single crystal silicon ingot and present in the silicon lattice remain after processing into the wafer and affect the properties of the wafer. The supersaturated interstitial oxygen atoms form oxygen precipitates in the bulk region of the wafer during the heat treatment process of the wafer, thereby forming a positive gettering site that serves as a gettering site for removing contamination by metal impurities formed through the semiconductor device manufacturing process There is also an effect. However, presence of interstitial oxygen above a proper level acts as a source for generating dislocation loops and stacking faults, which are crystal defects of a single crystal silicon ingot, and is very bad for the yield and quality of semiconductor devices. . Therefore, the interstitial oxygen concentration in the wafer must be determined according to the final semiconductor device product, and the oxygen concentration in the single crystal silicon ingot must be maintained and the radial oxygen concentration gradient (ORG) in the single crystal silicon ingot , The deviation of the oxygen concentration in the radial direction) is very important and various studies are underway.

If the ORG deviates from the target level at the beginning and the end of the vertical part of the single crystal silicon ingot, the length of the single crystal silicon ingot (also called the prime section) for wafer production may decrease and the manufacturing yield may be lowered.

Japanese Patent Laid-Open No. 5-194077

The embodiment provides a method and apparatus for manufacturing a single crystal silicon ingot with an improved oxygen concentration gradient in the radial direction.

According to one embodiment, a single crystal silicon ingot manufacturing method for manufacturing a single crystal silicon ingot by growing a single crystal silicon ingot from a melt contained in a crucible is characterized in that the strength of the horizontal magnetic field applied to the melt, the first rotational speed of the single crystal silicon ingot, (A) obtaining information indicating the convective characteristic of the melt by using at least one of the characteristics of the melt; (B) obtaining an oxygen concentration gradient in the radial direction of the single crystal silicon ingot by using the obtained information; And (c) varying at least one of the intensity of the horizontal magnetic field, the second rotational speed of the single crystal silicon ingot, or the temperature characteristic until the oxygen concentration gradient to the radial echo reaches a target value have.

For example, the step (a) may include: obtaining a first value related to forced convection of the melt using the first rotational speed; Obtaining a second value related to natural convection of the melt using the temperature characteristic; And obtaining the ratio of the second value to the first value as the information.

For example, the step (a) may further include obtaining the temperature characteristic. The step of obtaining the temperature characteristic of the crucible may include a step of obtaining a temperature difference between a start point and an end point of the convection of the melt. Determining the temperature difference comprises: measuring a first temperature of the sidewall of the crucible in contact with the edge of the surface of the melt; Measuring a second temperature of the bottom surface of the crucible; And obtaining the absolute value of the difference between the first temperature and the second temperature as the temperature characteristic.

For example, the above ratios can be obtained as follows.

Figure 112016109452417-pat00001

Here, R represents the ratio, Re represents the Reynolds number as the first value, and Ra represents the Rayleigh number as the second value.

For example, the first value may be obtained as follows.

Figure 112016109452417-pat00002

Here,? Represents the first rotation speed, L represents the horizontal diameter of the single crystal silicon ingot, and v represents the kinematic viscosity of the melt.

For example, the second value may be obtained as follows.

Figure 112016109452417-pat00003

Where Gr denotes a Grash of number, Pr denotes a Prandtl number,? Denotes a thermal expansion coefficient of the melt, g denotes a gravitational acceleration, Cp represents a specific heat of the melt, DELTA T represents a temperature characteristic of the crucible, and k represents a thermal conductivity of the melt.

For example, the horizontal diameter can be obtained as follows.

Figure 112016109452417-pat00004

Where H represents the depth of the melt, r s represents the first radius of the single crystal silicon ingot, and r c represents the second radius of the crucible.

For example, from the intensity of the horizontal magnetic field, the ratio can be obtained as follows.

Figure 112016109452417-pat00005

Here, G represents the intensity of the horizontal magnetic field, and K 2 = 0.9232.

For example, the oxygen concentration gradient can be obtained from the ratio using the following relational expression.

Figure 112016109452417-pat00006

Here, ORG represents the oxygen concentration gradient, and R represents the ratio.

For example, the target value may be between 2% and 3%, and the ratio when the oxygen concentration gradient reaches the target value may be between 0.0085 and 0.0093.

For example, the relational expression of R and ORG can be obtained by using the maximum value and the minimum value of the oxygen concentration at the center of the single crystal silicon ingot and the oxygen concentration at plural points of the edge of the single crystal silicon ingot, Can be derived using the measured values of the concentration gradient.

Figure 112016109452417-pat00007

Here, ORGr represents an actual value of the oxygen concentration gradient in the radial direction, Max represents the maximum value, and Min represents the minimum value.

For example, the step of varying the temperature characteristic may vary at least one of a first heat applied to the sidewall of the crucible or a second heat applied to the bottom surface of the crucible.

For example, the step (c) may include increasing at least one of the magnitude of the horizontal magnetic field or the second rotational speed to decrease the ratio, thereby approximating the oxygen concentration gradient to the target value.

For example, the step (c) may vary at least one of the intensity of the horizontal magnetic field, the second rotational speed, and the temperature characteristic to increase the forced convection and reduce the natural convection.

For example, the first rotation speed corresponds to the rotation speed of the previously prepared single crystal silicon ingot, and the second rotation speed may correspond to the rotation speed of the single crystal silicon ingot currently produced.

A single crystal silicon ingot manufacturing apparatus according to another embodiment comprises: a crucible for containing a melt; A heater disposed around the crucible to heat the crucible; A magnetic field generator for applying a magnetic field to the crucible; A pulling portion for pulling the single crystal silicon ingot from the melt while rotating the single crystal ingot; An information calculation unit for calculating information indicating a convection characteristic of the melt by using at least one of an intensity of a horizontal magnetic field applied to the melt, a first rotation speed of the single crystal silicon ingot, and a temperature characteristic of the crucible; An oxygen concentration calculating unit for calculating an oxygen concentration gradient in the radial direction of the single crystal silicon ingot using the calculated information; And a control unit for comparing the calculated oxygen concentration gradient with a target value, and controlling at least one of the magnetic field generating unit, the lifting unit, and the heater in response to the compared result.

For example, the heater may include a first heater for heating a sidewall of the crucible; And a second heater for heating the bottom surface of the crucible.

The method and apparatus for producing a single crystal silicon ingot according to an embodiment predicts a convection characteristic of a melt by using at least one of a strength of a horizontal magnetic field, a previous rotation speed of a single crystal silicon ingot, or a temperature characteristic of a crucible, It is possible to reduce the oxygen concentration gradient in the radial direction of the single crystal silicon ingot by varying the intensity of the horizontal magnetic field, the current rotational speed of the single crystal silicon ingot or the temperature characteristic of the crucible so as to increase the forced convection of the single crystal silicon ingot and reduce the natural convection.

Fig. 1 is a flowchart for explaining a single crystal silicon ingot manufacturing method according to the embodiment.
2 is a view schematically showing a single crystal silicon ingot manufacturing apparatus according to an embodiment.
FIG. 3 is a flowchart for illustrating operation 110 of FIG. 1 according to an embodiment of the present invention.
FIG. 4 is a flowchart for explaining an embodiment of operation 114 shown in FIG.
5 is a graph showing the temperature characteristics of the crucible by the intensity of the horizontal magnetic field.
6 is a graph showing the ratio of the convection characteristic information by the intensity of the horizontal magnetic field.
7 is a graph showing the change of the ORG with respect to the intensity of the horizontal magnetic field.
8 is a graph showing a change in ORG according to the intensity and the ratio of the horizontal magnetic field.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate understanding of the present invention. However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art.

Fig. 1 is a flowchart for explaining a single crystal silicon ingot manufacturing method 100 according to the embodiment.

Fig. 2 is a view schematically showing a single crystal silicon ingot manufacturing apparatus 200 according to the embodiment.

The single crystal silicon ingot manufacturing method 100 shown in Fig. 1 can be performed by the apparatus 200 shown in Fig. The device 200 shown in FIG. 2 is only one embodiment for facilitating understanding of the method 100 shown in FIG. Thus, the method 100 shown in FIG. 1 may also be performed by other devices than the device 200 shown in FIG.

In addition, the apparatus 200 shown in Fig. 2 may perform a method of manufacturing a single crystal silicon ingot according to another embodiment other than the method 100 shown in Fig.

Prior to describing the method 100 shown in FIG. 1, the configuration and operation of the device 200 shown in FIG. 2 will be briefly described as follows.

The apparatus 200 shown in Figure 2 includes a crucible 210, a support shaft drive 216, a support rotation shaft 218, a melt 220, a single crystal silicon ingot 230, a seed crystal 232, A heating member 260, a heating member 260, a heat insulating member 270, a magnetic field generating unit 280, an information calculating unit 282, an oxygen concentration calculating unit 284, (290).

The single crystal silicon ingot manufacturing method 100 and the apparatus 200 according to the embodiment can grow the single crystal silicon ingot 230 by the CZ method as described below, but the embodiments are not limited thereto.

First, a high-purity polycrystalline silicon raw material is charged in the crucible 210 and heated by the heaters 260 and 262 at a temperature not lower than the melting point temperature to be converted into a silicon melt (hereinafter referred to as a melt) 220. In this case, the crucible 210 for containing the melt 220 may have a dual structure of quartz 212 inside and graphite 214 outside.

Then, the lifting portion 240 loosens the pulling wire 242 to contact or immerse the tip of the seed crystal 232 at the approximate center of the surface of the melt 220. At this time, the silicon seed crystal 232 can be held using a seed chuck (not shown).

The support shaft driving unit 216 rotates the support rotation axis 218 of the crucible 220 in the direction of the arrow and the pulling unit 240 rotates the single crystal silicon ingot 230 by the pulling wire 242, And then pulled up. At this time, the circumferential single crystal silicon ingot 230 can be completed by controlling the speed V and the temperature gradients G and G to pull up the single crystal silicon ingot 230. 2, the direction in which the crucible 220 rotates is counterclockwise, and the direction in which the single crystal silicon ingot 230 rotates is illustrated as clockwise, but the embodiment is not limited to this. According to another embodiment, the direction in which the crucible 220 is rotated is clockwise, and the direction in which the single crystal silicon ingot 230 is rotated may be counterclockwise. Alternatively, the direction in which the crucible 220 and the single crystal silicon ingot 230 are rotated may be counterclockwise or clockwise.

The heat shield member 250 is disposed to surround the single crystal silicon ingot 230 between the single crystal silicon ingot 230 and the crucible 210 and serves to cut off heat radiated from the single crystal silicon ingot 230.

The heater 260 is disposed around the crucible 210 to heat the crucible 210. As illustrated in FIG. 2, the heater 260 may include first and second heaters 260 and 262. The first heater 260 serves to heat the sidewall of the crucible 210 and the second heater 262 serves to heat the bottom surface of the crucible 210. The second heater 262 may be omitted, as the case may be.

The first heater 260 may generate heat uniformly in the vertical direction under the control of the controller 290 and may control the amount of heat generated in the vertical direction. If the first heater 260 uniformly generates heat in the vertical direction, the maximum heat generating portion may be located slightly above the center or the center of the first heater 260. However, when the first heater 260 can adjust the amount of heat generated in the vertical direction, the maximum heat generating portion can be arbitrarily adjusted. The controller 290 can determine the position of the maximum heat generating portion of the first heater 260.

The magnetic field generator 280 serves to apply a magnetic field to the crucible 210. The magnetic field generating unit 280 may be thermally isolated from the first heater 260 by the heat insulating material 270. The magnetic field generator 280 may apply a magnetic field to the crucible 210 to form a maximum gauss plane (MGP) at a determined position under the control of the controller 290. Here, MGP means a portion where the horizontal component of the magnetic field generated from the magnetic field generating portion 280 becomes maximum. For example, the controller 290 may determine the position of the MGP according to the determined position of the maximum heater of the first heater 260. Further, when the position of the maximum heat generating portion is changed, the controller 290 can adjust the position of the MGP according to the changed position of the maximum heat generating portion. The controller 290 controls the magnetic field generator 280 so that the MGP is formed at the determined or adjusted position to apply the magnetic field to the crucible 210. [

The operation of the control unit 290, the first heater 260, and the magnetic field generating unit 280 is only one example, and the embodiment is not limited thereto.

Hereinafter, with reference to Figures 1 and 2, the method 100 shown in Figure 1 will be described as follows.

The melting point of the molten liquid 220 may be controlled by using at least one of the intensity of the horizontal magnetic field generated in the magnetic field generating section 280 and applied to the melt 220, the first rotation speed of the single crystal silicon ingot 230, (Hereinafter referred to as " convection characteristic information ") (step 110). Here, the "first rotational speed" refers to the rotational speed of the single crystal silicon ingot manufactured before the current production of the single crystal silicon ingot 230 by the method 100 and apparatus 200 shown in FIGS. 1 and 2 . Further, in order to avoid confusion with the first rotational speed, the rotational speed of the single crystal silicon ingot 230 currently being manufactured is referred to as a "second rotational speed".

The information calculating unit 282 performing step 110 acquires the intensity of the horizontal magnetic field from the magnetic field generating unit 280 and acquires the first rotation speed of the single crystal silicon ingot 230 from the lifting unit 240, IN, and the temperature characteristics of the crucible 210 can be obtained through the first and second heaters 260 and 262. [ In this manner, the information calculating unit 282 can calculate the convection characteristic information using at least one of the intensity of the obtained horizontal magnetic field, the first rotational speed, and the temperature characteristic.

Hereinafter, all calculations for calculating the convection characteristic information can be performed in the information calculating section 282, but the embodiments are not limited thereto.

In general, the convection characteristics of the molten liquid 220 can be changed by the first rotational speed of the single crystal silicon ingot 230, the rotational speed of the crucible 210, the temperature characteristic of the crucible 210, and the intensity of the horizontal magnetic field. Therefore, according to the embodiment, at least one of the first rotational speed of the single crystal silicon ingot 230, the temperature characteristic of the crucible 210, or the intensity of the horizontal magnetic field is used to obtain the convection characteristic information of the melted liquid 220.

FIG. 3 is a flowchart illustrating an embodiment 110A of operation 110 shown in FIG.

Referring to FIG. 3, an embodiment 110A of operation 110 is as follows.

A first value Re related to forced convection of the melt 220 is obtained using the first rotation speed of the single crystal silicon ingot 230 in operation 112. For example, the first value Re, which is the Reynolds number, can be obtained by the following equation (1).

Figure 112016109452417-pat00008

Where L is the horizontal diameter of the single crystal silicon ingot 230 and v is the kinematic viscosity of the melt 220. The term " . In Equation (1), the viscosity (v) may be a constant. The kinematic viscosity (v) used to obtain the first value Re may be 3.25e-07 (m < 2 > / s). Here, when the unit of the first rotation speed? Is rpm, the first radius? Of the single crystal silicon ingot 230 at the first rotation speed? Is converted to the linear velocity r s ).

As described above, according to the embodiment, the Reynolds number (Re) is used to analyze the forced convection of the melt 220.

After operation 112, the temperature characteristic of the crucible 210 is obtained (operation 114).

4 is a flowchart illustrating an embodiment 114A of operation 114 shown in FIG.

The step 114 of obtaining the temperature characteristic of the crucible 210 shown in FIG. 3 may include a step of obtaining a temperature difference between the point of time when the convection of the melt 220 and the end point of the melt 220 is obtained. For example, the step of obtaining the temperature difference may include Steps 114-1 to 114-3 shown in FIG.

First, the first temperature T1 of the sidewall of the crucible 210 in contact with the edge of the surface of the melt 220 is measured (Step 114-1). After Step 114-1, the second temperature T2 of the bottom surface of the crucible 210 is measured (Step 114-2). However, the embodiment is not limited to this. That is, according to another embodiment, step 114-1 may be performed after step 114-2, and steps 114-1 and 114-2 may be performed simultaneously.

After obtaining the first and second temperatures T1 and T2, the absolute value? T of the difference between the first temperature T1 and the second temperature T2 can be obtained as a temperature characteristic as shown in the following equation (2).

Figure 112016109452417-pat00009

Referring to FIG. 2, as the single crystal silicon ingot 230 rotates while being pulled, the first region (SRC: Seed Rotation Cell) where the forced convection of the melt 220 is affected and the crucible 210 are rotated, There may be a second region (CRC: Crucial Rotation Cell) where the natural convection of the first region 220 is affected.

Since the melt 220 flows along the wall surface of the crucible 210 and conveys the molten solution 220, the absolute value of the difference between the first and second temperatures T1 and T2 DELTA T) is obtained as the temperature characteristic of the crucible 210. [

3, after step 114, a second value Ra related to the natural convection of the melt 220 is obtained using the temperature characteristic of the crucible 210 (step 116). Here, the second value Ra is a Rayleigh number, which can be obtained by the following equation (3).

Figure 112016109452417-pat00010

Where Gr denotes a Grash of number, Pr denotes a Prandtl number,? Denotes a thermal expansion coefficient of the melt 220, g denotes a gravitational acceleration, represents the density of the melt 220 and C r represents the specific heat of the melt 220 and k represents the thermal conductivity of the melt 220. In Equation (3), the factors (?, G,?, C ?, v, k) excluding the temperature characteristic? T and the horizontal diameter L may all be constants. Β for obtaining a second value (Ra) of Equation (3) 1.32e-04 (1 / K) a, g is 9.81 (m / s 2) and, ρ is 2530 (kg / ㎥), Cp is 942.727 (J / kg-K), v is 3.25e-07 (m 2 / s), and k can be 42.9 (W / mK).

In equation (3), the gas uses a grayscale number (Gr) to interpret the natural convection and the liquid has the number of Rayleighs (Ra) multiplied by the number of Pras number (Pr) ) Is used.

In each of the above-described expressions (1) and (3), the horizontal diameter (L) can be obtained by the following equation (4).

Figure 112016109452417-pat00011

Here, H represents the depth of the melt 220. That is, H represents the vertical distance from the surface of the melt 220 to the bottom surface of the crucible 210. In equation (4), r s represents the first radius of the single crystal silicon ingot 230, and r c represents the second radius of the crucible 210.

In the case of FIG. 3, steps 114 and 116 are performed after step 112, but the embodiments are not limited thereto. That is, according to another embodiment, step 112 may be performed after steps 114 and 116 are performed, and step 112 may be performed simultaneously when steps 114 and 116 are performed.

3, after calculating the first value Re and the second value Ra, the ratio of the second value Ra to the first value Re is obtained as the convection characteristic information (Operation 118). For example, the ratio (R) can be obtained by the following equation (5).

Figure 112016109452417-pat00012

Referring to Equation (5), it can be seen that the ratio R of the number of Rayleighs (Ra) and the number of Reynolds Re (Re) related to the forced convection is used to predict the convective flow of the melt 220. Here, the ratio R does not have a dimension.

The ratio R corresponding to the convection characteristic information is determined by the first rotational speed? And the temperature characteristic? T of the crucible 210 and the depth H of the melt 220, as described above, The first radius r s of the single crystal silicon ingot 230 and the second radius r c of the crucible 210.

According to another embodiment, the ratio R corresponding to the convection characteristic information may be obtained by using the intensity of the horizontal magnetic field applied from the magnetic field generator 280 to the crucible 210. [ The details of this are as follows.

5 is a graph showing the temperature characteristic T of the crucible 210 by the magnitude of the horizontal magnetic field. The horizontal axis represents the intensity of the horizontal magnetic field and the vertical axis represents the temperature characteristic T of the crucible 210 .

FIG. 6 is a graph showing a ratio R, which is convection characteristic information per magnitude of a horizontal magnetic field, in which the horizontal axis represents the intensity of the horizontal magnetic field and the vertical axis represents the ratio R, which is the convection characteristic information.

The present applicant has experimentally examined the relationship between the intensity of the horizontal magnetic field and the ratio (R) of Equation (5) corresponding to the convection characteristic information. In other words, the tendency of the convective characteristic information to change with the change of the horizontal magnetic field was examined. As a result, as the intensity of the horizontal magnetic field increases, the temperature characteristic T of the crucible 210 decreases as shown in FIG. 5, and the ratio R decreases as shown in FIG.

In FIG. 6, when the ratio (R) 310 of the horizontal magnetic field is approximated by a straight line, the ratio R with respect to the intensity of the horizontal magnetic field can be expressed by Equation (6).

Figure 112016109452417-pat00013

Here, G represents the intensity of the horizontal magnetic field, and K 2 = 0.9232. Considering that the predicted (trendline) accuracy of the experimental value using the trend equation is 100% as the K 2 value approaches 1, the trend equation of Equation 6 has an accuracy of about 92.3% (0.9232).

That is, according to the embodiment 110A, the first value Re and the second value Ra are obtained, and the values Re and Ra are substituted into Equation 5 to obtain the ratio R corresponding to the convection characteristic information Can be obtained. Alternatively, according to another embodiment 110B, the ratio R corresponding to the convection characteristic information can be obtained by substituting the intensity of the horizontal magnetic field into Equation (6).

1, the oxygen concentration gradient (ORG) in the radial direction of the single crystal silicon ingot 230 is obtained using the convection characteristic information R obtained in operation 110 (operation 120 ). Step 120 may be performed in the oxygen concentration calculation unit 284 shown in FIG. That is, the oxygen concentration calculating unit 284 can calculate the ORG using the information calculated by the information calculating unit 282, and output the calculated ORG to the control unit 290. [

For example, the oxygen concentration gradient (ORG) can be obtained by substituting the ratio R obtained in operation 110 into the following equation (7).

Figure 112016109452417-pat00014

Equation (7) can be obtained as follows.

First, the oxygen concentration at the center of the single crystal silicon ingot 230 is measured, and the oxygen concentration at a plurality of points on the edge of the single crystal silicon ingot 230 is measured. For example, the oxygen concentration can be measured at four points on the edge of the single crystal silicon ingot 230. Here, the four points at the edges may be positions spaced by 90 [deg.] Apart from the outermost radial direction of the single crystal silicon ingot 230 by 6 mm.

As described above, the maximum value and the minimum value among the measured plurality of oxygen concentrations are selected, and the measured value ORGr of the oxygen concentration gradient (ORG) can be derived using the selected maximum value and minimum value as shown in the following equation (8).

Figure 112016109452417-pat00015

Here, Max represents the maximum value among the plurality of measured oxygen concentrations, and Min represents the minimum value among the plurality of oxygen concentrations measured. Generally, the oxygen concentration at the center of the single crystal silicon ingot 230 is the maximum, and the oxygen concentration decreases from the center of the single crystal silicon ingot 230 to the edge.

As described above, the relationship between the measured value ORGr of the ORG and the ratio R can be derived several times to obtain a graph showing the relationship between ORG and R shown in FIG. 8, which will be described later. That is, Equation (8) is a mathematical expression derived from the relationship between ORG and R shown in FIG.

Referring again to FIG. 1, it is checked whether the oxygen concentration gradient (ORG) to the radius echoes of the single crystal silicon ingot 230 has reached a target value (operation 130). According to the embodiment, the target value may be, for example, 2% to 3%, but the embodiment is not limited to this. Referring to Equation (7), it can be seen that the oxygen concentration gradient (ORG) falls within a target range of 2% to 3% when the ratio R obtained in Step 110 is 0.0085 to 0.0093.

If the oxygen concentration gradient (ORG) reaches the target value, the method 100 shown in FIG. 1 is terminated. However, when the oxygen concentration gradient ORG does not reach the target value, at least one of the intensity G of the horizontal magnetic field, the second rotational speed of the single crystal silicon ingot 230, or the temperature characteristic T is varied step).

When the ORG does not reach the target value, the OR of the horizontal magnetic field G, the second rotational speed or the temperature characteristic of the single crystal silicon ingot 230 DELTA T), the ORG can be made to reach the target value.

Steps 130 and 140 may be performed by the control unit 290. [ That is, the control unit 290 compares the ORG calculated by the oxygen concentration calculation unit 284 with a previously stored target value, and may generate the first to third control signals C1 to C3 in response to the compared results. That is, the horizontal magnetic field generated by the magnetic field generating unit 280 can be varied by the first control signal C1 generated by the controller 290. [ The second rotation speed for rotating the single crystal silicon ingot 230 in the pulling up part 240 in response to the second control signal C2 generated by the controller 290 can be varied. The temperature characteristic T of the crucible 210 can be varied in response to the third control signal C3 generated by the controller 290. [ The third control signal C3 may include the 3-1 and 3-2 control signals C31 and C32. The calorific value of the first heater 260 is controlled in response to the third control signal C31 generated from the control unit 290 to vary the first temperature T1 of the sidewall of the crucible 210, The heating value of the second heater 262 is controlled in response to the third-second control signal C32 generated from the control unit 290 to vary the second temperature T2 of the bottom surface of the crucible 210, The temperature characteristic [Delta] T can be varied.

That is, the control unit 290 controls the first heater 260 to change the temperature characteristic? T of the crucible 210 to the first row or the second heater 262 applied to the sidewall of the crucible 210, So that at least one of the second rows applied to the bottom surface of the crucible 210 can be varied. If the first heat increases, the first temperature T of the sidewall of the crucible 210 increases and the second temperature increases, the second temperature T2 of the bottom surface of the crucible 210 may increase.

FIG. 7 is a graph showing the change of the ORG with respect to the intensity of the horizontal magnetic field, wherein the horizontal axis represents the intensity of the horizontal magnetic field and the vertical axis represents the ORG.

8 is a graph showing a change in ORG according to a magnitude of intensity of a horizontal magnetic field (magnitude intensity) and a ratio (R), wherein the horizontal axis represents the ratio, the vertical axis on the left represents ORG and the vertical axis represents the magnitude of the horizontal magnetic field .

According to the embodiment, at least one of the intensity of the horizontal magnetic field or the second rotational speed is increased to approximate the oxygen concentration gradient (ORG) in the radial direction of the single crystal silicon ingot 230 to the target value, thereby reducing the ratio R .

If the second rotational speed is increased, the ratio R may decrease.

Referring to FIG. 6, it can be seen that the ratio R decreases as the intensity of the horizontal magnetic field increases. As shown in FIG. 7, as the intensity of the horizontal magnetic field is increased, the ORG continuously decreases. Referring to FIGS. 5 to 7 and 8, the temperature characteristic T, ratio R and ORG of the crucible 210 according to the intensity of the horizontal magnetic field can be summarized as shown in Table 1 below.

The intensity of the horizontal magnetic field (G) 2700 3300 3900 Temperature characteristic (? T) (K) 6.47 5.14 4.76 R x 10 -2 1.28 1.02 0.94 ORG (%) 5.72 4.33 3.13

The first value Re at the above-mentioned ratio R reflects the characteristics of the forced convection of the melt 220 and the second value Ra reflects the characteristics of the natural convection. Therefore, if the forced convection is increased by increasing the first value Re and the natural convection is reduced by decreasing the second value Ra, the ratio R can be reduced and the ORG can be improved. That is, in step 140, it is possible to vary at least one of the intensity of the horizontal magnetic field, the second rotational speed, and the temperature characteristic so that the ORG reaches the target value. That is, in order to produce a single-crystal silicon ingot having an ORG of a desired target value, the method and apparatus for producing a single crystal silicon ingot according to the embodiment is characterized in that, in process conditions, the intensity of the horizontal magnetic field, At least one of them is adjusted.

Therefore, in the method and apparatus for producing a single crystal silicon ingot according to the embodiment, a single crystal silicon ingot having an ORG in the range of 2% to 3% can be produced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

210: crucible 216: support shaft driving part
218: support rotating shaft 220: melt
230: single crystal silicon ingot 232: seed crystal
240: lifting portion 242: pulling wire
250: heat shield member 260, 262: heater
270: Heat insulating material 280: Magnetic field generating part
282: Information calculating section 284: Oxygen concentration calculating section
290:

Claims (19)

A method for producing a single crystal silicon ingot by growing a single crystal silicon ingot from a melt contained in a crucible,
(a) obtaining information indicating the convection characteristic of the melt using at least one of an intensity of a horizontal magnetic field applied to the melt, a first rotation speed of the single crystal silicon ingot, or a temperature characteristic of the crucible;
(b) obtaining an oxygen concentration gradient in the radial direction of the single crystal silicon ingot by using the obtained information; And
(c) varying at least one of the intensity of the horizontal magnetic field, the second rotational speed of the single crystal silicon ingot, or the temperature characteristic until the oxygen concentration gradient in the radial echo reaches a target value,
The step (a)
Obtaining a first value associated with forced convection of the melt using the first rotational speed;
Obtaining a second value related to natural convection of the melt using the temperature characteristic; And
And obtaining the ratio of the second value to the first value as the information. delete The method of claim 1, wherein step (a)
Further comprising the step of determining the temperature characteristic. 4. The method of claim 3, wherein the step of obtaining the temperature characteristic of the crucible
And obtaining a temperature difference between a start point and an end point of the convection of the melt. 5. The method of claim 4, wherein the step
Measuring a first temperature of the sidewall of the crucible in contact with the edge of the surface of the melt;
Measuring a second temperature of the bottom surface of the crucible; And
And obtaining an absolute value of a difference between the first temperature and the second temperature as the temperature characteristic. The method for producing a single crystal silicon ingot according to claim 1, wherein the ratio is obtained as follows.
Figure 112018004941922-pat00016

(Where R represents the ratio, Re represents the Reynolds number as the first value, and Ra represents the Rayleigh number as the second value.) 7. The method according to claim 6, wherein the first value is obtained as follows.
Figure 112016109452417-pat00017

(Where? Represents the first rotational speed, L represents the horizontal diameter of the single crystal silicon ingot, and v represents the kinematic viscosity of the melt). 8. The method according to claim 7, wherein the second value is obtained as follows.
Figure 112016109452417-pat00018

Where Gr denotes a Grash of number, Pr denotes a Prandtl number,? Denotes a thermal expansion coefficient of the melt, g denotes a gravitational acceleration ) Represents the density of the melt, Cp represents the specific heat of the melt, DELTA T represents the temperature characteristic of the crucible, and k represents the thermal conductivity of the melt. The method for producing a single crystal silicon ingot according to claim 7 or 8, wherein the horizontal diameter is obtained as follows.
Figure 112016109452417-pat00019

(Where H represents the depth of the melt, r s represents the first radius of the single crystal silicon ingot, and r c represents the second radius of the crucible.) The method according to claim 6, wherein the ratio is calculated as follows from the intensity of the horizontal magnetic field.
Figure 112016109452417-pat00020

(Where G represents the intensity of the horizontal magnetic field, and K 2 = 0.9232). 11. The method for producing a single crystal silicon ingot according to claim 6 or 10, wherein the oxygen concentration gradient is obtained from the ratio using the following relational expression.
Figure 112016109452417-pat00021

(Wherein ORG represents the oxygen concentration gradient, and R represents the ratio). 12. The method according to claim 11, wherein the target value is 2% to 3%, and the ratio when the oxygen concentration gradient reaches the target value is 0.0085 to 0.0093. 12. The method of claim 11,
Wherein the oxygen concentration at the center of the single crystal silicon ingot and the maximum value and the minimum value of the oxygen concentration at the plurality of positions of the edge of the single crystal silicon ingot are used to calculate the oxygen concentration gradient of the single crystal silicon Method of manufacturing an ingot.
Figure 112016109452417-pat00022

Wherein ORGr represents an actual value of the oxygen concentration gradient in the radial direction, Max represents the maximum value, and Min represents the minimum value. 6. The method of claim 5, wherein varying the temperature characteristic comprises:
Controlling a first heater to heat the sidewall of the crucible to vary the first temperature; And
And controlling a second heater that heats the bottom surface of the crucible to vary the second temperature. 2. The method of claim 1, wherein step (c)
Increasing the at least one of the intensity of the horizontal magnetic field or the second rotational speed to decrease the ratio to bring the oxygen concentration gradient close to the target value. 2. The method of claim 1, wherein step (c)
Varying at least one of the intensity of the horizontal magnetic field, the second rotational speed or the temperature characteristic to increase the forced convection and reduce the natural convection. The method of any one of claims 1, 7, 15, and 16, wherein the first rotational speed corresponds to a rotational speed of a previously fabricated single crystal silicon ingot, And the rotation speed of the single crystal silicon ingot is the same as the rotation speed of the single crystal silicon ingot. A crucible for containing a melt;
A heater disposed around the crucible to heat the crucible;
A magnetic field generator for applying a magnetic field to the crucible;
A pulling portion for pulling the single crystal silicon ingot from the melt while rotating the single crystal ingot;
An information calculation unit for calculating information indicating a convection characteristic of the melt by using at least one of an intensity of a horizontal magnetic field applied to the melt, a first rotation speed of the single crystal silicon ingot, and a temperature characteristic of the crucible;
An oxygen concentration calculating unit for calculating an oxygen concentration gradient in the radial direction of the single crystal silicon ingot using the calculated information; And
And a control unit for comparing the calculated oxygen concentration gradient with a target value and controlling at least one of the magnetic field generating unit, the lifting unit, and the heater in response to the comparison result,
The information calculation unit may calculate,
A first value associated with forced convection of the melt using the first rotational speed;
A second value associated with natural convection of the melt using the temperature characteristic; And
And calculates the ratio of the second value to the first value as the convection characteristic information. 19. The apparatus of claim 18, wherein the heater
A first heater for heating a sidewall of the crucible; And
And a second heater for heating the bottom surface of the crucible.
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