KR101759003B1 - Method for Silicon Single Crystal - Google Patents
Method for Silicon Single Crystal Download PDFInfo
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- KR101759003B1 KR101759003B1 KR1020150189844A KR20150189844A KR101759003B1 KR 101759003 B1 KR101759003 B1 KR 101759003B1 KR 1020150189844 A KR1020150189844 A KR 1020150189844A KR 20150189844 A KR20150189844 A KR 20150189844A KR 101759003 B1 KR101759003 B1 KR 101759003B1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- Crystallography & Structural Chemistry (AREA)
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- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The embodiment of the present invention includes a lower heater for growing a silicon single crystal ingot by a Czochralski method and applying heat at a lower portion of the silicon melt, a side heater for heating the side surface, and a magnetic field applying means for applying a magnetic field to the silicon melt A single crystal ingot is grown by setting at least one of the intensity of the magnetic field, the output value of the lower heater, and the output value of the side heater to satisfy a predetermined relational expression. Therefore, it is possible to set a process parameter that does not cause fluctuation of the pulling rate of pulling up the silicon ingot, so that the quality of the grown single crystal ingot can be improved.
Description
The present invention relates to a method of growing a silicon single crystal, and more particularly, to a method of growing a single crystal by setting a power ratio of a heater provided in a single crystal growing apparatus in consideration of a magnetic field strength.
A silicon single crystal is mainly used as a substrate of a semiconductor element, and a czochralski (CZ) method is mainly used as a method of growing a single crystal silicon in the form of an ingot. A single crystal ingot manufacturing method using the Czochralski method includes filling a quartz crucible with a solid raw material such as polysilicon to fill the quartz crucible, heating the quartz crucible with a heater to melt the seed, dipping the seed into the silicon melt, A single crystal ingot having a predetermined diameter and length is grown.
In the course of performing such a method of growing a single crystal ingot, crystal defects that degrade the performance of a device are generated. In particular, oxygen is included in the silicon single crystal. Oxygen is grown as oxygen precipitates by the heat applied during the growth of the monocrystalline ingot. This oxygen precipitate enhances the strength of silicon wafers and captures metal pollutants. As an internal gettering site However, it exhibits harmful characteristics that cause leakage current and fail of semiconductor devices. Such defects may be caused by various factors such as the pulling rate of the silicon single crystal, the temperature gradient of the silicon melt, and the like.
FIG. 1 is a graph showing the pulling rate, the diameter of the ingot and the oxygen concentration for each grown length during the growth of the single crystal ingot. Referring to FIG. 1, it can be seen that a region where the pulling rate greatly varies at a point where the solidification rate of the silicon ingot becomes 55%. As a result of the change of the pulling rate, the diameter of the silicon ingot that is being grown to the target value is changed, and this affects the target oxygen concentration value.
Fig. 2 is a view showing defects of the silicon ingot grown under the pulling rate condition shown in Fig. 1. Fig. The ingot is in a vacancy-rich (V) region in which a defect due to void is present when the pull-up speed is raised to a predetermined threshold value of V / G or higher (a rapid increase) with respect to the pulling rate V and the temperature gradient G in the vicinity of the solid- When it is lowered to the V / G threshold (low speed increase), it grows to the Oxidation Induced Stacking Fault (OSF) region, and when it is lowered to a lower speed, it becomes an interstitial rich region It grows. Between the V region and the I region, there exists a defect-free region which is neither vacancy rich nor interstitial rich. This defect-free area is further divided into a residual vacancy-free defect-free area (Pv area) and a residual interstitial defect-free area (Pi area).
2, it can be seen that LDP, which is a defective region, is formed based on the point of time when the pulling rate is changed.
It is necessary to control the temperature gradient of the silicon melt which convects inside the quartz crucible in order to maintain the target pulling rate of the silicon melt. The heater for applying heat to the silicon melt includes a side heater provided on the side of the quartz crucible and a lower heater provided on the lower side. Japanese Unexamined Patent Application Publication No. 2007-261846 discloses a method of manufacturing a single crystal ingot However, there is a need for a method capable of further improving the oxygen concentration and the quality of the defect-free region.
Embodiments can extend the defect-free region by deriving the output ratios of the side and lower heaters that are placed inside the single crystal growth device and apply heat to the quartz crucible through other process factors, thereby stably growing the silicon single crystal The present invention relates to a method of growing a silicon single crystal.
The embodiment of the present invention includes a lower heater for growing a silicon single crystal ingot by a Czochralski method and applying heat at a lower portion of the silicon melt, a side heater for heating the side surface, and a magnetic field applying means for applying a magnetic field to the silicon melt A method for growing a silicon single crystal using a silicon single crystal growing apparatus comprising the steps of: growing a single crystal ingot in the single crystal growing apparatus; varying a pulling rate according to a set value of a ratio of an intensity of a magnetic field and an output value of the lower heater to an output value of the side heater Deriving a profile indicating whether a section occurs; In the profile and the X-so as to satisfy the relationship of La Y when setting the ratio of the output value of the lower heater for the output value of the heater side, and setting the intensity of the horizontal magnetic field, X d, X-0.459 -5 Y≥4e And a Y value is set to grow a single crystal ingot.
The ratio of the output value of the lower heater to the output value of the side heater is selected in the range of 0.02 to 0.16, and when the intensity of the horizontal magnetic field is higher than 2800G And X and Y values are set so as to satisfy the relational expression.
The process of setting the X and Y values to satisfy the relational expression is performed by changing at least one of the intensity of the horizontal magnetic field, the output value of the side heater, and the output value of the lower heater.
According to the embodiment of the present invention, in the growth of a silicon single crystal ingot, a process parameter that does not cause fluctuation of the pulling rate is set in consideration of the ratio of the output value of the lower heater and the side heater that transmit heat to the silicon melt, So that the quality of the monocrystalline ingot to be grown can be improved.
According to the embodiment of the present invention, a defective region such as LDP is not generated in the grown single crystal ingot and the yield of the single crystal ingot can be improved as the defect free region is expanded.
According to the embodiment of the present invention, since the process parameters are set so that the convection of the silicon melt is stabilized, the oxygen concentration contained in the silicon melt can be uniformly controlled and the quality of the crystal region can be improved.
FIG. 1 is a graph showing the pulling rate, the diameter of the ingot and the oxygen concentration for each length grown during the growth of the single crystal ingot
FIG. 2 is a view showing defects of a silicon ingot grown under the pulling rate condition shown in FIG. 1
3 is a cross-sectional view showing a silicon single crystal growing apparatus according to an embodiment
4 is a graph showing the temperature at the top and bottom of the crucible according to the output ratios of the lower heater and the side heater in a state where the intensity of the magnetic field is fixed
5 is a graph showing the relationship between the output ratio and the magnetic field between the lower heater and the side heater according to the embodiment
6 is a flow chart illustrating a single crystal growth method according to an embodiment
The embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to these embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for the sake of clarity of the present invention.
An embodiment is a method for growing a silicon ingot in which a defect-free region is expanded by preventing a pull-up rate from deviating from a target value during a single crystal growth process. By controlling the oxygen concentration contained in a silicon ingot to a target value, To a silicon single crystal growing method capable of growing a silicon single crystal.
3 is a cross-sectional view showing a silicon single crystal growth apparatus according to an embodiment.
Referring to FIG. 3, the apparatus for growing silicon single crystal is provided with a
A
Then, after the seed seed crystal is fixed to the
FIG. 4 is a graph showing the temperature at the top and bottom of the crucible according to the power value of the lower heater while the magnetic field strength is fixed.
4, the temperature of the upper and lower portions of the silicon melt in the crucible is measured while fixing the magnetic field intensity by the magnetic field applying means in the single crystal growth apparatus and increasing the power value of the lower heater uniformly. I think. This is accomplished in two types of single crystal growth apparatuses, one is a single crystal growth apparatus as in the embodiment, and the other is a single crystal growth apparatus additionally provided with members for additionally insulating the silicon melt.
When the output value of the lower heater becomes larger, the output value of the side heater becomes smaller and the total amount of electric power can be controlled constantly. The upper temperature of the silicon melt is the solid-
As shown in the two measured graphs, it can be seen that as the output value of the lower heater increases, the temperature difference between the upper and lower portions of the silicon melt gradually decreases. As the temperature at the upper and lower portions of the solution for silicon decreases, the difference in density of the melt becomes smaller and the melt isolated at the lower portion of the crucible is not formed, and convection stably occurs inside the crucible.
If the temperature difference between the upper and lower portions of the silicon melt is higher than a predetermined value, the melt exchange at the upper and lower portions of the crucible is weakened. As a result, the relatively cold melt is isolated and the amount of the molten melt is decreased. The melt which has been isolated by the buoyancy moves toward the upper part of the crucible, causing a sudden temperature change in the area of the crystal being grown, so that the pulling rate varies.
In order to prevent variations in the pulling rate due to the temperature difference between the upper portion and the lower portion of the silicon melt, in the embodiment, the output value of the lower heater, which influences the temperature of the upper portion of the silicon melt and the lower portion of the silicon melt, The single crystal ingot is to be grown. On the specification, the output value can be understood as a power value.
5 is a graph showing the relationship between the output ratio and the magnetic field between the lower heater and the side heater according to the embodiment. FIG. 5 shows the relationship between the output ratio and the magnetic field between the heaters in which convection stability is secured. As shown in FIG. 4, the index of convective stability of the silicon melt is an interval during which the pulling rate is suddenly changed during the growth of the silicon single crystal Whether or not it occurred. The output ratio is defined as a value obtained by dividing the output value of the side heater from the output value of the lower heater.
The abscissa of FIG. 5 represents the intensity of the magnetic field, and the ordinate represents the ratio of the lower heater power to the lateral heater power, and the process conditions in which the pulling rate is changed while changing the output ratio according to the intensity in the magnetic field.
For example, when the magnetic field intensity is set to 2000 G, no change period of the pulling rate is generated when the output ratio is set to 0, 0.043, or 0.08, and when the magnetic field intensity is set to 2800 G, 0.02, the growth rate of the single crystal growth was changed.
As shown in FIG. 5, the relationship between the magnitude of the magnetic field and the output ratio between the heater and the heater is different depending on whether the pulling rate varies or not It can be seen that it is divided into regions.
That is, a two-dimensional function having a predetermined slope can be defined along the boundary between the section where the variation of the pulling-up speed appears and the section where the variation of the pulling-up speed does not appear. When the ratio of the output value of the lower heater to the output value of the side heater (the output value of the lower heater / the output value of the side heater) is defined as Y, the two-dimensional function defines the intensity of the magnetic field as X, As shown in FIG.
The two-dimensional function corresponding to the boundary line dividing the graph of FIG. 5 according to the presence or absence of the change area of the pulling rate in the single crystal ingot growing apparatus of the embodiment can be expressed by the following equation (1).
(X: intensity of magnetic field, Y: ratio of output value of lower heater to output value of side heater)
The above equation (1) is a two-dimensional function shown in the graph according to the correlation between the intensity of the magnetic field applied to the silicon melt and the output ratio between the heaters. By selecting the X and Y values located at the upper part with the two- The growth conditions can be set so that fluctuation of the pulling rate does not occur when the single crystal ingot grows. That is, it is preferable that the Y value is set to be equal to or larger than the function concerning X.
5, if the magnetic field strength is 2800 G or less, any value may be applied to the power ratio between the heaters. In particular, when the magnetic field intensity is 2800 G or more, a section satisfying the condition of Y? 4e -5 X-0.459 It can be confirmed that the output ratio should be set.
The higher the intensity of the magnetic field, the slower the convection velocity of the silicon melt and the stagnation of the upper and lower convection of the silicon melt in the crucible. In other words, the upper and lower convection of the silicon melt is limited by the magnetic field, so that the temperature difference becomes larger, and the boundary at which the fluctuation range of the pulling speed is generated can be judged to occur on the basis of 2800G.
In FIG. 5, when the magnetic field intensity is 2000 G, even if the output value of the lower heater is set to 0, no variation period of the pulling rate occurs, which indicates that the temperature difference between the upper and lower portions of the silicon melt is not large. That is, when the magnetic field intensity is less than 2800G, the factor of the variation of the pulling rate is that the output ratio between the heaters is not a major factor.
In FIG. 3, it was confirmed that the convection stability of the silicon melt became unstable when the temperature difference between the upper and lower portions of the silicon melt was 93 degrees or more. The temperature difference between the upper and lower portions of the silicon melt was found to be within about 93 degrees in the range of the magnetic field strength of 2200 to 2800G can do.
That is, the embodiment sets the value of the magnetic field strength X and the output ratio Y to satisfy the function of Y? 4e -5 X-0.459 when the intensity of the magnetic field is greater than 2800 G, The output ratio Y between the heaters can be set within the range of 0.02 to 0.16.
Embodiments can grow a single crystal ingot by changing at least one of the intensity of the magnetic field, the output value of the side heater, and the output value of the lower heater. It is possible to change either the output value of the lower heater or the side heater in a state where the intensity of the magnetic field is fixed and to control the strength of the magnetic field in the state where the output ratio is set so as to prevent the change of the pulling rate during growth of the single crystal ingot .
6 is a flowchart illustrating a single crystal growth method according to an embodiment.
Referring to FIG. 6, in the single crystal growth method of the embodiment, first, the step (S10) of filling the crucible with solid polysilicon as a raw material is performed. (Step S20) of setting an output value (power value) so as to raise the temperature of the side heater provided inside the single crystal growing apparatus and heating the side heater of the quartz crucible and the lower heater that applies heat at the bottom of the quartz crucible ). Then, a magnetic field applying unit provided outside the single crystal growth apparatus applies a horizontal magnetic field of a predetermined value to the silicon melt formed in the crucible (S30).
The embodiment refers to the profile derived in consideration of the ratio (output ratio) of the output value of the lower heater to the output value of the side heater and the intensity of the magnetic field in the process of performing steps S20 and S30, It is possible to perform the setting process.
The embodiment is characterized in that, before the step S10 is performed to derive the profile, the step of growing the monocrystalline ingot in the single crystal growing apparatus is performed in accordance with the setting value of the ratio of the output value of the lower heater to the output value of the side heater, A step of deriving a profile indicating whether or not a section in which a speed fluctuates occurs may be preceded.
The profile shows whether the upper and lower temperature differences of the silicon melt occur due to the convection velocity of the silicon melt, and whether the speed at which the single crystal ingot is pulled up during the single crystal growth process is changed occurs. The profile is a diagram showing a region in which a change period of the pulling rate appears, with the magnetic field strength and the output ratio being control conditions.
According to the profile, the convection velocity of the silicon melt decreases in a section having a magnetic field of 2800 G or more, and a temperature difference is generated in the upper and lower portions of the silicon melt, and a section in which the pulling rate is changed according to the output power of the heater is generated.
Therefore, in the embodiment, when the magnetic field is set to an intensity of 2800G or more, the X and Y values are set so as to satisfy the relational expression of Y? 4e -5 X-0.459 (X: magnetic field strength, Y: heater output ratio). When the magnetic field is set to an intensity of 2800 G or less, the output ratio of the heater may be set to be 0.02 to 0.16.
A step S50 of performing growth of the silicon single crystal with the output ratio of the heater and the intensity of the magnetic field being set as described above may be performed.
When the silicon single crystal ingot is grown as in the embodiment, it is possible to set process parameters that do not cause the pulling up speed of the silicon ingot to fluctuate, thereby improving the quality of the grown single crystal ingot. Accordingly, a defective region such as LDP is not generated in the grown single crystal ingot, and the yield of the single crystal ingot can be improved as the defect free region is expanded.
Setting the process parameters in consideration of the output ratios of the side heaters and the lower heaters and the intensity of the magnetic field so as to stabilize the convection of the silicon melt as in the embodiment can improve the quality of the crystal region by uniformly controlling the oxygen concentration included in the silicon melt .
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications other than those described above are possible. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Claims (5)
Wherein a ratio of the output value to the intensity of the horizontal magnetic field is set to a value of a ratio of an intensity of a horizontal magnetic field applied to the silicon melt to an output value of the lower heater with respect to an output value of the side heater when the single crystal ingot is grown in the single crystal growth apparatus, Deriving a profile indicating whether or not a section in which the pulling rate fluctuates during the growth of silicon single crystal according to the change as a graph consisting of the x-axis and the y-axis;
In the profile and the X-so as to satisfy the relationship of La Y when setting the ratio of the output value of the lower heater for the output value of the heater side, and setting the intensity of the horizontal magnetic field, X d, X-0.459 -5 Y≥4e Y value is set to grow a single crystal ingot.
Wherein a ratio of an output value of the lower heater to an output value of the side heater is selected in the range of 0.02 to 0.16 when the intensity of the horizontal magnetic field is set to be smaller than 2800G.
Wherein the X and Y values are set so as to satisfy the relational expression when the intensity of the horizontal magnetic field is set to 2800 G or more.
The process of setting the X and Y values to satisfy the relational expression includes:
And changing the at least one of the intensity of the horizontal magnetic field, the output value of the side heater, and the output value of the lower heater.
Wherein the profile is derived in consideration of a correlation that a pulling up speed for pulling up the single crystal ingot due to a temperature difference between the uppermost surface and the lowermost surface of the silicon melt is changed during growth.
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| JP6930458B2 (en) * | 2018-02-28 | 2021-09-01 | 株式会社Sumco | Silicon melt convection pattern estimation method, silicon single crystal oxygen concentration estimation method, silicon single crystal manufacturing method, and silicon single crystal pulling device |
| JP6844560B2 (en) * | 2018-02-28 | 2021-03-17 | 株式会社Sumco | Silicon melt convection pattern control method, silicon single crystal manufacturing method, and silicon single crystal pulling device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002226293A (en) | 2000-11-30 | 2002-08-14 | Memc Japan Ltd | Method for growing silicon single crystal |
| JP2004083317A (en) | 2002-08-26 | 2004-03-18 | Sumitomo Mitsubishi Silicon Corp | Pulling up method for silicon single crystal |
| JP2007261846A (en) * | 2006-03-28 | 2007-10-11 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Method for manufacturing defect-free silicon single crystal |
| JP2008081352A (en) * | 2006-09-27 | 2008-04-10 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Apparatus and method for producing single crystal |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002226293A (en) | 2000-11-30 | 2002-08-14 | Memc Japan Ltd | Method for growing silicon single crystal |
| JP2004083317A (en) | 2002-08-26 | 2004-03-18 | Sumitomo Mitsubishi Silicon Corp | Pulling up method for silicon single crystal |
| JP2007261846A (en) * | 2006-03-28 | 2007-10-11 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Method for manufacturing defect-free silicon single crystal |
| JP2008081352A (en) * | 2006-09-27 | 2008-04-10 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Apparatus and method for producing single crystal |
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