JP2018043901A - Method and apparatus for manufacturing silicon single crystal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a silicon single crystal, capable of enhancing the controllability and robustness of pulling speed of the silicon single crystal.SOLUTION: A method for manufacturing a silicon single crystal comprises growing a silicon single crystal C from a silicon melt M stored in a crucible 2 by the Czochralski method. When the temperature of a meniscus portion P1 having a contact between the outermost periphery of the silicon single crystal during growth and the silicon melt is A (K); a distance in the radially outer direction of the silicon melt from the meniscus portion of the silicon single crystal during the growth is L (mm); and the temperature of the free surface FS of the silicon melt at a position P2 having the distance L is B (K), the silicon single crystal is grown on the manufacturing condition that a temperature gradient Gs on the free surface of the silicon melt defined by Gs(K/mm)=(B-A)/1000L monotonously decreases with the increase of the distance L.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a method and an apparatus for manufacturing a silicon single crystal.

  In a silicon single crystal manufacturing apparatus using the Czochralski method, concentric multi-stage sub-heaters each capable of temperature control are provided above the surface of the silicon melt, and when producing a silicon single crystal, a multi-stage sub-heater is used. It is known that the temperature of the inner wall of the crucible is lowered by lowering the temperature of the main heater while the surface of the silicon melt is heated, thereby reducing the oxygen concentration in the silicon single crystal (Patent Document 1).

Japanese Patent Laid-Open No. 5-294882

  However, even if the oxygen concentration can be reduced, the controllability (variation) of the pulling rate of the silicon single crystal cannot be improved.

  The problem to be solved by the present invention is to provide a silicon single crystal manufacturing method, a silicon single crystal manufacturing apparatus, a pulling rate controllability or a robust property that can improve the pulling rate controllability and robustness of the silicon single crystal. It is to provide an evaluation method and a design method of a silicon single crystal manufacturing apparatus.

The invention according to the first aspect is a silicon single crystal manufacturing method for growing a silicon single crystal from a silicon melt contained in a crucible by the Czochralski method.
The temperature of the meniscus portion that is the contact point between the outermost periphery of the growing silicon single crystal and the silicon melt is A (K), and the outer radius of the silicon melt starts from the meniscus portion of the growing silicon single crystal. When the distance in the direction is L (mm) and the temperature of the free surface of the silicon melt at the position of the distance L is B (K), Gs (K / mm) = (B−A) / L The above-mentioned problem is solved by a silicon single crystal manufacturing method for growing the silicon single crystal under a manufacturing condition in which the temperature gradient Gs on the free surface of the defined silicon melt monotonously decreases as the distance L increases. To do. Here, the monotonic decrease means a decrease without having an extreme value, and it means that the temperature gradient Gs decreases without increasing as the distance L increases.

  Although not particularly limited, in the invention according to the first aspect, the profile of the temperature gradient Gs with respect to the distance L does not indicate an inflection point (an inflection point refers to a point at which the sign of curvature changes). It is desirable.

The invention according to the second aspect comprises a chamber,
A quartz crucible provided in the chamber and containing a silicon melt;
A graphite crucible protecting the outer peripheral surface of the quartz crucible;
A heater provided around the crucible in the chamber;
A cylindrical heat shield member provided on the crucible in the chamber and covering the growing silicon single crystal;
A heat insulating cylinder provided around the heater in the chamber,
In a silicon single crystal manufacturing apparatus for growing a silicon single crystal from a silicon melt contained in a crucible by the Czochralski method,
The temperature of the meniscus portion that is the contact point between the outermost periphery of the growing silicon single crystal and the silicon melt is A (K), and the outer radius of the silicon melt starts from the meniscus portion of the growing silicon single crystal. When the distance in the direction is L (mm) and the temperature of the free surface of the silicon melt at the position of the distance L is B (K), Gs (K / mm) = (B−A) / L The above problem is solved by a silicon single crystal manufacturing apparatus having a characteristic that the temperature gradient Gs on the free surface of the defined silicon melt is monotonously decreased as the distance L increases.

  In the invention according to the second aspect, at least the chamber, the quartz crucible, the graphite crucible, the heater, the heat shield so that the temperature gradient Gs monotonously decreases as the distance L increases. You may set the shape of a member and the said heat insulation cylinder, a dimension, arrangement | positioning relationship, a material, and the thermal characteristic resulting from these.

  Further, in the invention according to the second aspect, the opening diameter of the lower end of the heat shielding member, the lower end of the heat shielding member, and the silicon fusion are such that the temperature gradient Gs monotonously decreases as the distance L increases. You may set the distance with a liquid level.

The invention according to the third aspect is a method for evaluating controllability or robustness of pulling speed in a method for producing a silicon single crystal by the Czochralski method.
The temperature of the meniscus portion that is the contact point between the outermost periphery of the growing silicon single crystal and the silicon melt is A (K), and the outer radius of the silicon melt starts from the meniscus portion of the growing silicon single crystal. When the distance in the direction is L (mm) and the temperature of the free surface of the silicon melt at the position of the distance L is B (K), Gs (K / mm) = (B−A) / L It is determined whether or not the temperature gradient Gs on the free surface of the defined silicon melt decreases monotonously as the distance L increases. If the temperature gradient Gs decreases monotonously, the pulling speed controllability or robustness is determined. The above-mentioned problem is solved by evaluating that is good.

  The invention according to the fourth aspect is based on the method for evaluating pulling rate controllability or robustness according to the third aspect, by the silicon single crystal manufacturing apparatus evaluated as having good pulling rate controllability or robustness. Solve the above problems.

  The invention according to the fifth aspect solves the above problem by a method for producing a silicon single crystal using the silicon single crystal production apparatus according to the fourth aspect.

An invention according to a sixth aspect comprises a chamber,
A quartz crucible provided in the chamber and containing a silicon melt;
A graphite crucible protecting the outer peripheral surface of the quartz crucible;
A heater provided around the crucible in the chamber;
A cylindrical heat shield member provided on the crucible in the chamber and covering the growing silicon single crystal;
A heat insulating cylinder provided around the heater in the chamber,
In the design method of the hot zone of the silicon single crystal manufacturing equipment by the Czochralski method,
The temperature of the meniscus portion that is the contact point between the outermost periphery of the growing silicon single crystal and the silicon melt is A (K), and the outer radius of the silicon melt starts from the meniscus portion of the growing silicon single crystal. When the distance in the direction is L (mm) and the temperature of the free surface of the silicon melt at the position of the distance L is B (K), Gs (K / mm) = (B−A) / L The shape, size, arrangement relationship, material, and material of at least one member constituting the hot zone so that the temperature gradient Gs on the free surface of the defined silicon melt decreases monotonously as the distance L increases. The above-mentioned problems are solved by designing the thermal characteristics resulting from these.

  In the present invention, when the manufacturing condition is set such that the temperature gradient Gs on the free surface of the silicon melt decreases monotonously with the increase of the distance L, and the silicon single crystal is grown under the manufacturing condition, the silicon melt is freed. Since the surface convection is presumed to be stable, the controllability and robustness of the pulling speed of the silicon single crystal can be improved.

It is sectional drawing which shows one Embodiment of the manufacturing apparatus of the silicon single crystal of this invention. FIG. 2 is a half sectional view showing an enlarged hot zone HZ in FIG. 1. It is a graph which shows the relationship between the distance L measured using the Example of the manufacturing apparatus of the silicon single crystal from which the conditions of the hot zone HZ of FIG. 1 differ, and the temperature of the free surface B of a silicon melt. It is a graph which shows the relationship between the distance L and the temperature gradient Gs of the Example and comparative example of FIG.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing a silicon single crystal manufacturing apparatus according to an embodiment of the present invention. The silicon single crystal manufacturing apparatus 1 shown in FIG. 1 also applies the silicon single crystal manufacturing method according to the present invention. The silicon single crystal manufacturing apparatus 1 shown in the figure includes a cylindrical first chamber 11 and a cylindrical second chamber 12, which are hermetically connected.

  Inside the first chamber 11, a quartz crucible 21 containing the silicon melt M and a graphite crucible 22 protecting the quartz crucible 21 are supported by a support shaft 23 and driven. The mechanism 24 can be rotated and lifted. Further, an annular heater 25 and an annular heat insulating cylinder 26 made of a heat insulating material are disposed so as to surround the quartz crucible 21 and the graphite crucible 22. The graphite crucible 22 may be made of a carbon fiber reinforced-carbon matrix-composite. A heater may be added below the quartz crucible 21.

  A cylindrical heat shielding member 27 is provided inside the first chamber 11 and above the quartz crucible 21. The heat shielding member 27 is made of a refractory metal such as molybdenum or tungsten, or carbon, blocks radiation from the silicon melt M to the silicon single crystal C, and rectifies the gas flowing in the first chamber 11. The heat shielding member 27 is fixed to the heat retaining cylinder 26 using a bracket 28. A heat shield part is provided at the lower end of the heat shield member 27 so as to face the liquid surface of the silicon melt M, so that radiation from the surface of the silicon melt M is cut and the surface of the silicon melt M is kept warm. It may be.

  The second chamber 12 connected to the upper part of the first chamber 11 is a chamber for accommodating the grown silicon single crystal C and taking it out. A pulling mechanism 32 for pulling up the silicon single crystal while rotating it with the wire 31 is provided in the upper part of the second chamber 12. A seed crystal S is mounted on the chuck at the lower end of the wire 31 suspended from the pulling mechanism 32. An inert gas such as argon gas is introduced from a gas inlet 13 provided in the upper portion of the first chamber 11. This inert gas passes between the silicon single crystal C being pulled and the heat shielding member 27, then passes between the lower end of the heat shielding member 27 and the melt surface of the silicon melt M, and further quartz. After rising to the upper end of the made crucible 21, it is discharged from the gas discharge port 14.

  A magnetic field generator 41 that applies a magnetic field to the melt M in the quartz crucible 21 is disposed outside the first chamber 11 (made of a nonmagnetic shield material) so as to surround the first chamber 11. The magnetic field generator 41 generates a horizontal magnetic field toward the quartz crucible 21 and is constituted by an electromagnetic coil. The magnetic field generator 41 controls the thermal convection generated in the melt M in the quartz crucible 21, thereby stabilizing the crystal growth and suppressing micro variations in the impurity distribution in the crystal growth direction. In particular, when producing a large-diameter silicon single crystal, the effect is great. In addition, it is good also as a magnetic field generator which produces | generates a longitudinal magnetic field or a cusp magnetic field as needed, and it is not necessary to use the magnetic field generator 41 as needed.

  In order to grow a silicon single crystal by the CZ method using the silicon single crystal manufacturing apparatus 1 of the present embodiment, first, a silicon raw material made of polycrystalline silicon or, if necessary, a dopant in a quartz crucible 21. The heater 25 is operated while the inert gas is introduced from the gas inlet 13 and discharged from the gas outlet 14, and the silicon raw material is melted in the quartz crucible 21 to obtain a silicon melt M. Subsequently, the temperature of the silicon melt M is raised to the starting temperature while the magnetic field generator 41 is operated to start application of a horizontal magnetic field to the quartz crucible 21. When the temperature and magnetic field strength of the silicon melt M are stabilized, the quartz crucible 21 is rotated at a predetermined speed by the drive mechanism 24 so that the seed crystal S attached to the wire 31 is immersed in the silicon melt M. Then, the wire 31 is also gently pulled up while rotating at a predetermined speed to form a seed stop, and then the diameter is increased to a desired diameter, and a silicon single crystal C having a substantially cylindrical straight body is grown.

  As the silicon single crystal C is pulled up, the liquid level of the quartz crucible 21 falls, and the condition of the hot zone HZ fluctuates including the application of a horizontal magnetic field from the magnetic field generator 41 to the quartz crucible 21. In order to suppress the fluctuation of the liquid level, the height in the vertical direction of the liquid level of the melt M during the pulling of the silicon single crystal C is controlled by the drive mechanism 24 to be constant. The control of the driving mechanism 24 is executed according to information such as the position of the quartz crucible 21, the position of the silicon melt M measured with a CCD camera, the pulling length of the silicon single crystal C, and the like. Thereby, the vertical position of the quartz crucible 21 is moved by the drive mechanism 24.

  The hot zone HZ refers to a region that is heated by heat from the heater 25 during the growth of the silicon single crystal. The conditions of the hot zone HZ include the first chamber 11, the quartz crucible 21, the graphite 22, The support shaft 23, the heater 25, the heat insulation cylinder 26, the heat shielding member 27, the silicon melt M, the silicon single crystal C, and the like, the shape, the dimensions, the arrangement relationship, the material, and various thermal characteristics resulting from them. FIG. 2 is an enlarged half-sectional view showing the main part of the hot zone HZ. As conditions for the hot zone HZ, the first chamber 11, the quartz crucible 21, the graphite 22, the support shaft 23, the heater 25, the heat retaining cylinder 26, the heat shielding member 27, the silicon melt M, the silicon single crystal C, and the like An example of the shape, size, arrangement relationship, material, and various thermal characteristics resulting from these, the opening diameter D (diameter or radius) of the lower end of the heat shielding member 27 shown in FIG. A distance Ga between the lower end and the silicon melt surface FS is mentioned.

Here, for an actual silicon single crystal manufacturing apparatus, n = 156 silicon single crystals are pulled up using a manufacturing apparatus according to an example in which D (diameter) = D1 mm and Ga = Ga1 mm, while D (diameter) ) = D1 + 60 mm, Ga = Ga1 + 15 mm was used to pull up n = 81 silicon single crystals using the manufacturing apparatus according to the comparative example. And when the dispersion | variation (mm / min) of the moving average of the speed actual value of the pulling-up speed V in these Examples and a comparative example was measured, it was as Table 1 below. In addition, the variation of the moving average of the speed actual values in Table 1 is as follows: (1) First, the moving average speed is obtained by averaging the instantaneous value of the crystal growth speed collected every minute in the 50 mm section in the crystal growth direction. (2) Next, the difference between the set value of the crystal growth rate and the moving average rate is obtained every minute, and the average of the differences is obtained for the entire length of the product acquisition region for one pulled silicon single crystal. (3) Finally, the average value for one silicon single crystal thus obtained is calculated as the total number of pulled silicon single crystals (in the example) In this case, after obtaining each of 156 silicon single crystals and 81 silicon single crystals in the case of the comparative example, the average value for all the numbers (in the case of the embodiment, the average value of 156 silicon single crystals, in the case of the comparative example) Of 81 silicon single crystals Average value) of seeking, which was used as a "variation of the moving average of the actual speed" in Table 1.
According to this result, when the controllability of the pulling rate by the production control method of the silicon single crystal by the defect-free region in which no grown-in defect exists by the CZ method is compared, as shown in Table 1, the comparative example is the example. It was 1.86 times worse than that.

  Therefore, with respect to the manufacturing apparatus according to the example set to D (diameter) = D1 mm and Ga = Ga1 mm, and the manufacturing apparatus according to the comparative example set to D (diameter) = D1 + 60 mm and Ga = Ga1 + 15 mm, other hot zones HZ Shapes and dimensions of the first chamber 11, quartz crucible 21, graphite 22, support shaft 23, heater 25, heat insulation cylinder 26, heat shield member 27, silicon melt M, silicon single crystal C, etc., which are conditions The arrangement relationship, material, and various thermal characteristics resulting from these were set to the same conditions in the examples and comparative examples, and the 300 mm silicon single crystal of CrysMAS (comprehensive heat transfer analysis simulation software manufactured by Fraunhofer Institute) was used on an electronic computer. A production simulation was performed. In the simulation analysis using CrysMAS, the convection of the melt in the crucible is not taken into consideration, and a two-dimensional axisymmetric model (a three-dimensional model may be used, but a simpler two-dimensional model is used in this example). A heat transfer analysis simulation was carried out. In the simulation in this case, as described in, for example, Japanese Patent No. 40486660, within the scope of the method of manufacturing a defect-free silicon single crystal in which no grown-in defects exist by the Czochralski method (CZ method). Carried out. That is, when the temperature gradient of the crystal center in the pulling axis direction is Gc and the temperature gradient of the crystal outer periphery is Ge, Gc / Ge = −0.007T / 10.62 in the range of T> 1360 ° C. In the range of 1230 ° C. ≦ T ≦ 130 ° C., a silicon single crystal is manufactured under manufacturing conditions satisfying Gc / Ge ≧ 1.0.

  Here, as shown in FIG. 2, the temperature of the meniscus portion P1, which is the contact point between the outermost periphery of the growing silicon single crystal C and the silicon melt M, is A (K), and the growing silicon single crystal C is the starting point. The distance to the radially outer side of the silicon melt M (specifically, starting from the meniscus portion P1) (P3 is a contact point between the free surface FS and the inner wall surface of the quartz crucible 21) is L (mm), the distance The relationship between the distance L and the temperature of the free surface B of the silicon melt was analyzed by Crys MAS when the temperature of the free surface FS of the silicon melt at the position P2 of L was B (K). The result is shown in FIG. According to the simulation result of FIG. 3, in both the example and the comparative example, the temperature rises monotonously toward the radially outward direction of the silicon melt M, and the temperature of the outer peripheral portion is higher in the comparative example. It seems that the convection of the free surface FS of the melt M is more stable.

  However, in order to match the results shown in FIG. 3 and the results shown in Table 1, the inventors have determined that the free surface of the silicon melt M defined by Gs (K / mm) = (BA) / L. When the temperature gradient Gs on FS was calculated, the result shown in FIG. 4 was obtained. That is, in the embodiment, as the distance L increases, the temperature gradient Gs monotonously decreases, and the temperature profile does not show an inflection point. On the other hand, the comparative example is not clear in FIG. 3, but as shown in FIG. 4, when the distance L increases, the temperature gradient Gs rapidly decreases and then increases gently and then decreases again. That is, the temperature profile shows a downwardly convex extreme value in the vicinity of the meniscus portion P1. When the profile of the relationship between the temperature gradient Gs and the distance L defined as described above is obtained, the convection stability of the free surface FS of the silicon melt M that cannot be found in the profile of the relationship between the temperature and the distance shown in FIG. Became clear. That is, as shown in the embodiment of FIG. 4, the monotonous decrease in the temperature gradient Gs as the distance L increases is presumed that the convection of the free surface FS of the silicon melt M is stable. Therefore, the pulling speed does not vary greatly. On the other hand, as shown in the comparative example of FIG. 4, the profile of the temperature gradient Gs indicates an inflection point as the distance L increases, which means that a stagnation portion exists in the convection of the free surface FS of the silicon melt M. It is presumed that it has occurred. Therefore, the pulling speed varies greatly.

  As described above, the manufacturing condition in which the temperature gradient Gs on the free surface of the silicon melt defined by Gs (K / mm) = (B−A) / L monotonously decreases as the distance L increases, particularly When the conditions of the hot zone HZ are set and the silicon single crystal is grown under the manufacturing conditions, the controllability and the robustness of the pulling rate of the silicon single crystal can be improved. As a result, a silicon single crystal having a defect-free region in which no grown-in defects exist can be manufactured relatively easily by the Czochralski method (CZ method).

  In addition, the setting condition of the opening diameter D (diameter or radius) of the lower end of the heat shielding member 27 and the distance Ga between the lower end of the heat shielding member 27 and the silicon melt surface FS of the embodiment described above is the heat of the hot zone HZ. In addition to this, the shape, dimensions, arrangement relationship, materials, and the like of at least the first chamber 11, the quartz crucible 21, the graphite crucible 22, the heater 25, the heat shielding member 27, and the heat insulating cylinder 26 are also included. Similarly, by setting the thermal characteristics resulting from these to appropriate values, it is possible to obtain a manufacturing condition in which the temperature gradient Gs on the free surface of the silicon melt decreases monotonically as the distance L increases. As a specific method, if the above-described CrysMAS simulation software is used and the shape, dimensions, arrangement relationship, and material of the components constituting the hot zone HZ are changed on the electronic computer in various ways, the temperature gradient Gs becomes the distance L. Conditions that monotonously decrease with increase can be easily obtained.

DESCRIPTION OF SYMBOLS 1 ... Manufacturing apparatus of a silicon single crystal 11 ... 1st chamber 12 ... 2nd chamber 13 ... Gas inlet 14 ... Gas outlet 21 ... Quartz crucible 22 ... Graphite crucible 23 ... Support shaft 24 ... Drive mechanism 25 ... Heater 26 ... Insulating cylinder 27 ... Heat shielding member 28 ... Bracket 31 ... Wire 32 ... Pulling mechanism 41 ... Magnetic field generator M ... Silicon melt C ... Silicon single crystal S ... Seed crystal HZ ... Hot zone

Claims (9)

In the method for producing a silicon single crystal for growing a silicon single crystal from a silicon melt stored in a crucible by the Czochralski method,
The temperature of the meniscus portion that is the contact point between the outermost periphery of the growing silicon single crystal and the silicon melt is A (K), and the outer radius of the silicon melt starts from the meniscus portion of the growing silicon single crystal. When the distance in the direction is L (mm) and the temperature of the free surface of the silicon melt at the position of the distance L is B (K), Gs (K / mm) = (B−A) / L A method for producing a silicon single crystal, wherein the silicon single crystal is grown under a production condition in which a temperature gradient Gs on a free surface of a defined silicon melt decreases monotonously as the distance L increases.   The method for producing a silicon single crystal according to claim 1, wherein the profile of the temperature gradient Gs with respect to the distance L does not show an inflection point. A chamber;
A quartz crucible provided in the chamber and containing a silicon melt;
A graphite crucible protecting the outer peripheral surface of the quartz crucible;
A heater provided around the crucible in the chamber;
A cylindrical heat shield member provided on the crucible in the chamber and covering the growing silicon single crystal;
A heat insulating cylinder provided around the heater in the chamber,
In a silicon single crystal production apparatus for growing a silicon single crystal from a silicon melt contained in a crucible by the Czochralski method,
The temperature of the meniscus portion that is the contact point between the outermost periphery of the growing silicon single crystal and the silicon melt is A (K), and the outer radius of the silicon melt starts from the meniscus portion of the growing silicon single crystal. When the distance in the direction is L (mm) and the temperature of the free surface of the silicon melt at the position of the distance L is B (K), Gs (K / mm) = (B−A) / L An apparatus for producing a silicon single crystal having a characteristic that a temperature gradient Gs on a free surface of a defined silicon melt monotonously decreases as the distance L increases.   Shapes and dimensions of at least the chamber, the quartz crucible, the graphite crucible, the heater, the heat shielding member, and the heat retaining cylinder so that the temperature gradient Gs monotonously decreases as the distance L increases. 4. The apparatus for producing a silicon single crystal according to claim 3, wherein the arrangement relationship, the material, and the thermal characteristics resulting therefrom are set.   The opening diameter of the lower end of the heat shielding member and the distance between the lower end of the heat shielding member and the silicon melt surface are set so that the temperature gradient Gs monotonously decreases as the distance L increases. Item 5. The apparatus for producing a silicon single crystal according to Item 3 or 4. In a method for evaluating the controllability or robustness of the pulling rate in the method for producing a silicon single crystal by the Czochralski method using an electronic computer,
The temperature of the meniscus portion that is the contact point between the outermost periphery of the growing silicon single crystal and the silicon melt is A (K), and the outer radius of the silicon melt starts from the meniscus portion of the growing silicon single crystal. When the distance in the direction is L (mm) and the temperature of the free surface of the silicon melt at the position of the distance L is B (K), Gs (K / mm) = (B−A) / L It is determined whether or not the temperature gradient Gs on the free surface of the defined silicon melt decreases monotonously as the distance L increases. If the temperature gradient Gs decreases monotonously, the pulling speed controllability or robustness is determined. How to evaluate that is good.   An apparatus for producing a silicon single crystal, which has been evaluated by the evaluation method according to claim 6 as having good controllability or robustness of the pulling rate.   A method for producing a silicon single crystal using the silicon single crystal production apparatus according to claim 7. A chamber;
A quartz crucible provided in the chamber and containing a silicon melt;
A graphite crucible protecting the outer peripheral surface of the quartz crucible;
A heater provided around the crucible in the chamber;
A cylindrical heat shield member provided on the crucible in the chamber and covering the growing silicon single crystal;
A heat insulating cylinder provided around the heater in the chamber,
In the design method on the electronic computer of the hot zone of the silicon single crystal manufacturing equipment by the Czochralski method,
The temperature of the meniscus portion that is the contact point between the outermost periphery of the growing silicon single crystal and the silicon melt is A (K), and the outer radius of the silicon melt starts from the meniscus portion of the growing silicon single crystal. When the distance in the direction is L (mm) and the temperature of the free surface of the silicon melt at the position of the distance L is B (K), Gs (K / mm) = (B−A) / L The shape, size, arrangement relationship, material, and material of at least one member constituting the hot zone so that the temperature gradient Gs on the free surface of the defined silicon melt decreases monotonously as the distance L increases. A method for designing a hot zone of a silicon single crystal manufacturing apparatus for designing thermal characteristics resulting from these.

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