TW201800626A - Manufacturing method of single crystal silicon - Google Patents
Manufacturing method of single crystal silicon Download PDFInfo
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- TW201800626A TW201800626A TW106105220A TW106105220A TW201800626A TW 201800626 A TW201800626 A TW 201800626A TW 106105220 A TW106105220 A TW 106105220A TW 106105220 A TW106105220 A TW 106105220A TW 201800626 A TW201800626 A TW 201800626A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
Description
本發明係有關於單晶矽的製造方法。 The invention relates to a method for manufacturing single crystal silicon.
有一種提案是在水平磁場施加柴可拉斯基法(HMCZ法)下，藉由在坩堝內的熔液的表面部使對流容易產生，在坩堝的底部抑制對流，使結晶成長軸方向的氧濃度分布均一化(專利文獻1)。 There is a proposal to apply the Tchaisky method (HMCZ method) under a horizontal magnetic field to facilitate the generation of convection by the surface of the melt in the crucible, suppress the convection at the bottom of the crucible, and make oxygen in the direction of the crystal growth axis. The concentration distribution is uniform (Patent Document 1).
先行技術文獻 Advanced technical literature
專利文獻1：日本特開平9-188590號公報 Patent Document 1: Japanese Patent Laid-Open No. 9-188590
另外，晶圓的外周端部往內10mm左右以內的範圍(以下也稱為外周部)的氧濃度會比在其他的中央部分低。這樣的外周部會成為發生裝置製程不良的主要原因，因此為了提高裝置的良率，會追求到外周部為止的氧濃度的均一化。 In addition, the oxygen concentration in the range of about 10 mm inward from the outer peripheral end portion of the wafer (hereinafter also referred to as the outer peripheral portion) may be lower than in other central portions. Such an outer peripheral portion becomes a main cause of a defect in the manufacturing process of the device. Therefore, in order to improve the yield of the device, the uniformity of the oxygen concentration up to the outer peripheral portion is pursued.
本發明所欲解決的問題是提供一種單晶矽的製造方法，能夠一邊將單晶矽的製造成本抑制到最小限定，一邊使晶圓面上的氧濃度到外周部為止能夠均一化。 The problem to be solved by the present invention is to provide a method for manufacturing single crystal silicon, which can make the concentration of oxygen on the wafer surface uniform to the outer periphery while minimizing the manufacturing cost of single crystal silicon.
第1觀點的發明，依據既定的製造條件，預先求出拉起時的單晶的直徑、水平磁場強度與單晶的結晶旋轉速度、以及在晶圓外周部的氧濃度的分布特性之間的相關關係；從該 被容許的在晶圓外周部的氧濃度的分布特性、該水平磁場強度的界限值與單晶的結晶旋轉速度的界限值、以及該相關關係，求出拉起時的單晶的直徑；在該既定的製造條件下，製造該求出的直徑之單晶矽。藉此，解決上述的問題。 In the first aspect of the invention, the diameter of the single crystal at the time of pulling up, the horizontal magnetic field strength and the crystal rotation speed of the single crystal, and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer are determined in advance based on predetermined manufacturing conditions Related relationship The permissible distribution characteristics of the oxygen concentration on the outer periphery of the wafer, the limit value of the horizontal magnetic field strength and the limit value of the crystal rotation speed of the single crystal, and the correlation, and the diameter of the single crystal at the time of pulling up is obtained; Under the predetermined manufacturing conditions, single crystal silicon of the determined diameter is manufactured. With this, the above-mentioned problems are solved.
第2觀點的發明，依據既定的製造條件，預先求出拉起時的單晶的直徑、水平磁場強度、單晶的結晶旋轉速度、以及在晶圓外周部的氧濃度的分布特性之間的相關關係；從該被容許的在晶圓外周部的氧濃度的分布特性、該拉起時的單晶的直徑的界限值、該拉起時的單晶的結晶旋轉速度的界限值、以及該相關關係，求出要施加的水平磁場強度；在該求出的水平磁場強度以及該既定的製造條件下，製造單晶。藉此，解決上述的問題。 According to the second aspect of the invention, the diameter of the single crystal at the time of pulling up, the horizontal magnetic field strength, the crystal rotation speed of the single crystal, and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer are determined in advance based on predetermined manufacturing conditions Correlation; from the distribution characteristic of the allowable oxygen concentration at the outer periphery of the wafer, the limit value of the diameter of the single crystal during the pull-up, the limit value of the crystal rotation speed of the single crystal during the pull-up, and the Correlation relationship, the horizontal magnetic field strength to be applied is obtained; under the determined horizontal magnetic field strength and the predetermined manufacturing conditions, a single crystal is manufactured. With this, the above-mentioned problems are solved.
第3觀點的發明，依據既定的製造條件，預先求出拉起時的單晶的直徑、水平磁場強度、單晶的結晶旋轉速度、以及在晶圓外周部的氧濃度的分布特性之間的相關關係；從該被容許的在晶圓外周部的氧濃度的分布特性、該拉起時的單晶的界限值、該水平磁場強度的界限值、以及該相關關係，求出該單晶的結晶旋轉速度；在該求出的結晶旋轉速度以及該既定的製造條件下，製造單晶。藉此，解決上述的問題。 According to the invention of the third aspect, the diameter of the single crystal at the time of pulling up, the horizontal magnetic field strength, the crystal rotation speed of the single crystal, and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer are determined in advance based on predetermined manufacturing conditions Correlation; from the distribution characteristics of the allowable oxygen concentration at the outer periphery of the wafer, the limit value of the single crystal at the time of pulling up, the limit value of the horizontal magnetic field strength, and the correlation Crystal rotation speed; under the determined crystal rotation speed and the predetermined manufacturing conditions, a single crystal is manufactured. With this, the above-mentioned problems are solved.
雖然沒有特別限定，但在上述第1至第3觀點的發明中，將該拉起時的單晶的直徑假設為D(mm)，將水平磁場強度假設為G(高斯)，將拉起時的單晶的結晶旋轉速度假設為V(rpm)，將該在晶圓外周部的氧濃度的分布特性假設為δ(1017atoms/cm3)，假設a、b、c、d為常數時，藉由δ= aD+bG+cV+d這個式子定義出上述相關關係，在該既定的製造條件下預先求出該常數a、b、c、d為佳。 Although not particularly limited, in the inventions of the first to third aspects described above, the diameter of the single crystal at the time of pulling up is assumed to be D (mm), the strength of the horizontal magnetic field is assumed to be G (Gaussian), and at the time of pulling up The crystal rotation speed of the single crystal is assumed to be V (rpm), the distribution characteristic of the oxygen concentration on the outer periphery of the wafer is assumed to be δ (10 17 atoms / cm 3 ), and a, b, c, d are assumed to be constant , The above correlation is defined by the expression δ = aD + bG + cV + d, and it is better to obtain the constants a, b, c, and d in advance under the predetermined manufacturing conditions.
根據第1觀點的發明，預先求出水平磁場強度、單晶的結晶旋轉、在晶圓外周部的氧濃度的分布特性、再加上拉起的單晶的直徑之間的相關關係，製造單晶時，從在晶圓外周部的氧濃度的分布特性的界限值、水平磁場強度的界限值、單晶的結晶旋轉速度的界限值、以及相關關係，求出要拉起的單晶的最小的直徑。藉此，被拉起的單晶的直徑變為最小，因此能夠將單晶矽的生產成本抑制到最小限度。又，在晶圓外周部的氧濃度的分布特性維持在界限值，因此能夠使晶圓面的氧濃度均一化。 According to the invention of the first aspect, the correlation between the horizontal magnetic field strength, the crystal rotation of the single crystal, the distribution characteristics of the oxygen concentration at the outer periphery of the wafer, and the diameter of the pulled single crystal is obtained in advance to produce a single crystal When crystallizing, the minimum value of the single crystal to be pulled is obtained from the limit value of the distribution characteristic of the oxygen concentration on the outer periphery of the wafer, the limit value of the horizontal magnetic field strength, the limit value of the crystal rotation speed of the single crystal, and the correlation diameter of. By this, the diameter of the single crystal pulled up becomes the smallest, so the production cost of the single crystal silicon can be suppressed to the minimum. In addition, the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is maintained at the limit value, so that the oxygen concentration on the wafer surface can be made uniform.
根據第2觀點的發明，預先求出水平磁場強度、單晶的結晶旋轉、在晶圓外周部的氧濃度的分布特性、再加上拉起的單晶的直徑之間的相關關係，製造單晶時，從在晶圓外周部的氧濃度的分布特性的界限值、要拉起的單晶的直徑的界限值、單晶的結晶旋轉速度的界限值、以及相關關係，求出要施加的水平磁場強度。藉此，被拉起的單晶的直徑變為最小，因此能夠將單晶矽的生產成本抑制到最小限度。又，在晶圓外周部的氧濃度的分布特性維持在界限值，因此能夠使晶圓面的氧濃度均一化。 According to the invention of the second aspect, the correlation between the horizontal magnetic field strength, the crystal rotation of the single crystal, the distribution characteristic of the oxygen concentration at the outer periphery of the wafer, and the diameter of the pulled single crystal is obtained in advance to produce a single crystal When crystallizing, the limit value of the distribution characteristic of the oxygen concentration at the outer periphery of the wafer, the limit value of the diameter of the single crystal to be pulled up, the limit value of the crystal rotation speed of the single crystal, and the correlation relationship are obtained Horizontal magnetic field strength. By this, the diameter of the single crystal pulled up becomes the smallest, so the production cost of the single crystal silicon can be suppressed to the minimum. In addition, the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is maintained at the limit value, so that the oxygen concentration on the wafer surface can be made uniform.
根據第3觀點的發明，預先求出水平磁場強度、單晶的結晶旋轉、在晶圓外周部的氧濃度的分布特性、再加上拉起的單晶的直徑之間的相關關係，製造單晶時，從在晶圓外周部的氧濃度的分布特性的界限值、要拉起的單晶的直徑的界限 值、水平磁場強度的界限值、以及相關關係，求出單晶的結晶旋轉速度。藉此，被拉起的單晶的直徑變為最小，因此能夠將單晶矽的生產成本抑制到最小限度。又，在晶圓外周部的氧濃度的分布特性維持在界限值，因此能夠使晶圓面的氧濃度均一化。 According to the invention of the third aspect, the correlation between the horizontal magnetic field strength, the crystal rotation of the single crystal, the distribution characteristics of the oxygen concentration at the outer periphery of the wafer, and the diameter of the pulled single crystal is obtained in advance to produce a single crystal During the crystal, from the limit value of the distribution characteristic of the oxygen concentration on the outer periphery of the wafer, the limit of the diameter of the single crystal to be pulled Value, the limit value of the horizontal magnetic field strength, and the correlation, the crystal rotation speed of the single crystal is obtained. By this, the diameter of the single crystal pulled up becomes the smallest, so the production cost of the single crystal silicon can be suppressed to the minimum. In addition, the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is maintained at the limit value, so that the oxygen concentration on the wafer surface can be made uniform.
1‧‧‧單晶矽的製造裝置 1‧‧‧Single crystal silicon manufacturing equipment
11‧‧‧第1腔室 11‧‧‧ First chamber
12‧‧‧第2腔室 12‧‧‧ 2nd chamber
13‧‧‧氣體導入口 13‧‧‧Gas inlet
14‧‧‧氣體排出口 14‧‧‧ gas outlet
21‧‧‧石英製的坩堝 21‧‧‧Crucible made of quartz
22‧‧‧石墨製的坩堝 22‧‧‧Graphite crucible
23‧‧‧支持軸 23‧‧‧Support shaft
24‧‧‧驅動機構 24‧‧‧Drive mechanism
25‧‧‧加熱器 25‧‧‧heater
26‧‧‧保溫筒 26‧‧‧Insulation tube
27‧‧‧熱遮蔽構件 27‧‧‧heat shielding member
28‧‧‧托架 28‧‧‧Bracket
31‧‧‧線 31‧‧‧ line
32‧‧‧拉起機構 32‧‧‧Pulling mechanism
41‧‧‧磁場產生裝置 41‧‧‧ magnetic field generating device
C‧‧‧單晶矽 C‧‧‧Single crystal silicon
M‧‧‧矽熔液 M‧‧‧silicon melt
S‧‧‧種晶 S‧‧‧ Seed crystal
第1圖係顯示適用本發明的單晶矽的製造方法的製造裝置的一例的剖面圖。 FIG. 1 is a cross-sectional view showing an example of a manufacturing apparatus to which the method for manufacturing single crystal silicon of the present invention is applied.
第2圖係顯示第1圖所示的製造裝置的水平磁場強度、與在晶圓外周部的氧濃度分布特性之間的關係的一例。 FIG. 2 shows an example of the relationship between the horizontal magnetic field strength of the manufacturing apparatus shown in FIG. 1 and the oxygen concentration distribution characteristics on the outer periphery of the wafer.
第3圖係顯示第1圖所示的製造裝置的單晶的結晶旋轉、與在晶圓外周部的氧濃度的分布特性之間的關係的一例。 FIG. 3 shows an example of the relationship between the crystal rotation of the single crystal of the manufacturing apparatus shown in FIG. 1 and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer.
第4圖係顯示由第1圖所示的製造裝置所製造的單晶矽的晶圓的直徑方法的位置、與氧濃度之間的關係的一例。 FIG. 4 shows an example of the relationship between the position of the diameter method of the single crystal silicon wafer manufactured by the manufacturing apparatus shown in FIG. 1 and the oxygen concentration.
第5圖係顯示由第1圖所示的製造裝置所拉起的單晶的直徑、與在晶圓外周部的氧濃度的分布特性之間的關係的一例。 FIG. 5 shows an example of the relationship between the diameter of the single crystal pulled up by the manufacturing apparatus shown in FIG. 1 and the distribution characteristics of the oxygen concentration at the outer periphery of the wafer.
以下，根據圖式說明本發明的實施型態。第1圖係顯示適用本發明的單晶矽的製造方法的製造裝置的一例的剖面圖。適用本實施型態的製造方法的單晶矽的製造裝置1(以下簡單稱為製造裝置1)具備圓筒狀的第1腔室11、相同圓筒狀的第2腔室12，它們氣密地連接。 Hereinafter, an embodiment of the present invention will be described based on the drawings. FIG. 1 is a cross-sectional view showing an example of a manufacturing apparatus to which the method for manufacturing single crystal silicon of the present invention is applied. A single crystal silicon manufacturing apparatus 1 (hereinafter simply referred to as manufacturing apparatus 1) to which the manufacturing method of the present embodiment is applied includes a cylindrical first chamber 11 and an identical cylindrical second chamber 12, which are airtight地 连接。 Ground connection.
在第1腔室11的內部，收容矽熔液M的石英製的坩 堝21、以及保護這個石英製的坩堝21的石墨製的坩堝22會被支持軸23支持，且被驅動機構24旋轉或升降。又，以包圍石英製的坩堝21與黑鉛製的坩堝22的方式，配置了環狀的加熱器25以及同樣是環狀的由隔熱材所組成的保溫筒26。坩堝21的下方追加加熱器。 Inside the first chamber 11, a crucible made of quartz containing the silicon melt M The crucible 21 and the crucible 22 made of graphite that protects the crucible 21 made of quartz are supported by the support shaft 23 and are rotated or moved up and down by the drive mechanism 24. In addition, a ring-shaped heater 25 and a ring-shaped heat insulating tube 26 composed of a heat insulating material are also arranged so as to surround the crucible 21 made of quartz and the crucible 22 made of black lead. A heater is added below the crucible 21.
在第1腔室11的內部，石英製的坩堝21的上部設置有圓筒狀的熱遮蔽構件27。熱遮蔽構件27是由鉬、鎢等的等價金屬或碳所組成，遮斷從矽熔液M往單晶矽C的放射，且整流在第1腔室11內的氣體。熱遮蔽構件27會透過托架28固定到保溫筒26。這個熱遮蔽構件27的下端也可以設置與矽熔液M的全面相對的遮熱部，阻隔來自矽熔液M的表面的輻射，且保溫矽熔液M的表面。 Inside the first chamber 11, a cylindrical heat shield member 27 is provided above the crucible 21 made of quartz. The heat shielding member 27 is composed of equivalent metal such as molybdenum, tungsten, or carbon, blocks radiation from the silicon melt M to the single crystal silicon C, and rectifies the gas in the first chamber 11. The heat shielding member 27 is fixed to the heat preservation tube 26 through the bracket 28. The lower end of the heat shielding member 27 may be provided with a heat shielding portion that is opposed to the entire surface of the silicon melt M, blocks radiation from the surface of the silicon melt M, and keeps the surface of the silicon melt M insulated.
連接到第1腔室11的上部的第2腔室12是收容育成的單晶矽C且將其取出用的腔室。第2腔室12的上部設置有拉起機構32，以線31一邊旋轉一邊拉起單晶矽。從拉起機構32垂下的線31的下端的夾頭安裝了種晶S。氬氣等的非活性氣體從設置在第1腔室11的上部的氣體導入口13導入。這個非活性氣體過拉起中的單晶矽C與熱遮蔽構件27之間後，通過熱遮蔽構件27的下端與矽熔液M的熔液面之間，再往石英製的坩堝21的上端升起後，從氣體排出口14排出。 The second chamber 12 connected to the upper portion of the first chamber 11 is a chamber for accommodating the grown single crystal silicon C and taking it out. A pull-up mechanism 32 is provided on the upper part of the second chamber 12 to pull up the single-crystal silicon while rotating with the wire 31. The seed crystal S is attached to the chuck at the lower end of the wire 31 hanging from the pulling mechanism 32. Inert gas such as argon gas is introduced from the gas inlet 13 provided in the upper part of the first chamber 11. After this inactive gas is pulled up between the single crystal silicon C and the heat shielding member 27, it passes between the lower end of the heat shielding member 27 and the molten surface of the silicon melt M, and then to the upper end of the crucible 21 made of quartz After being raised, it is discharged from the gas discharge port 14.
第1腔室11(由非磁性材料組成)的外側，配置有包圍第1腔室11的磁場產生裝置41，對石英製的坩堝21內的熔液M施加磁場。磁場產生裝置41是朝向石英製的坩堝21產生水平磁場的裝置，由電磁線圈構成。磁場產生裝置41會控制在石 英製的坩堝21內的熔液M產生的熱對流，藉此使結晶成長穩定，抑制結晶成長方向的不純物分布的微細的不均。特別是製造大口徑的單晶矽的情況下，其效果較大。另外，以下所示的磁場強度是在石英製的坩堝21內的溶液M的液面的中心位置測量的值。 Outside the first chamber 11 (composed of a non-magnetic material), a magnetic field generating device 41 surrounding the first chamber 11 is arranged to apply a magnetic field to the melt M in a crucible 21 made of quartz. The magnetic field generating device 41 is a device that generates a horizontal magnetic field toward a crucible 21 made of quartz, and is composed of an electromagnetic coil. The magnetic field generating device 41 will control The convection of heat generated by the molten metal M in the crucible 21 in the inch system stabilizes the crystal growth and suppresses fine unevenness in the distribution of impurities in the crystal growth direction. Especially in the case of manufacturing large-diameter single crystal silicon, the effect is greater. In addition, the magnetic field strength shown below is the value measured at the center position of the liquid surface of the solution M in the crucible 21 made of quartz.
使用本實施型態的製造裝置1，要以CZ法育成單晶矽的話，首先在石英製的坩堝21內，填充多晶矽及因應必要而添加摻雜物的矽原料，開啟加熱器25，在石英製的坩堝21內熔解矽原料，做成矽熔液M。接著，開啟磁場產生裝置41開始對石英製的坩堝21施加水平磁場，一邊提高矽熔液M的溫度以調溫至開始溫度。矽熔液M的溫度與磁場強度穩定的話，一邊將非活性氣體從氣體導入口13導入並從氣體排出口14排出，一邊利用驅動機構24以既定的速度旋轉石英製的坩堝21，將安裝於線31的種晶S浸漬於矽熔液。然後，一邊以既定的速度旋轉線31一邊慢慢拉起，形成縮種後，再將直徑增大到希望的直徑大小，成長出具有略圓柱形狀的直胴部的單晶矽C。 Using the manufacturing apparatus 1 of this embodiment mode, if single crystal silicon is to be grown by the CZ method, first, a crucible 21 made of quartz is filled with polycrystalline silicon and silicon raw materials added with dopants as necessary, and the heater 25 is turned on. The silicon raw material is melted in the crucible 21 made into silicon melt M. Next, the magnetic field generating device 41 is turned on to start applying a horizontal magnetic field to the crucible 21 made of quartz, while raising the temperature of the silicon melt M to adjust the temperature to the starting temperature. When the temperature and the magnetic field strength of the silicon melt M are stable, the inert gas is introduced from the gas inlet 13 and discharged from the gas discharge port 14 while the crucible 21 made of quartz is rotated at a predetermined speed by the drive mechanism 24, The seed crystal S of the wire 31 is immersed in the silicon melt. Then, the wire 31 is slowly pulled up while rotating at a predetermined speed to form a shrinkage seed, and then the diameter is increased to a desired diameter to grow a single-crystal silicon C having a straight cylindrical portion with a slightly cylindrical shape.
隨著單晶矽C的拉起，石英製的坩堝21的矽熔液M的液面下降，包括從磁場產生裝置41對石英製的坩堝21的水平磁場的施加，熱區的條件變動。為了抑制這個液面條件的變動，在單晶矽C的拉起中的矽熔液M的液面的鉛直方向的高度會被驅動機構24控制為一定值。這個驅動機構24的控制，例如會因應坩堝21的位置，CCD相機等所測量的矽熔液M的液面的位置、單晶矽C的拉起長度、第1腔室11內的溫度、矽熔液M的表面溫度、非活性氣體流量等的資訊來執行，藉此石英製的坩 堝21的上下方向的位置會被驅動機構24所移動。 As the single crystal silicon C is pulled up, the liquid level of the silicon melt M of the quartz crucible 21 drops, including the application of the horizontal magnetic field from the magnetic field generating device 41 to the quartz crucible 21, and the conditions of the hot zone vary. In order to suppress this change in the liquid level conditions, the vertical height of the liquid level of the silicon melt M during the pulling of the single crystal silicon C is controlled by the drive mechanism 24 to a certain value. The control of this drive mechanism 24 may, for example, be in accordance with the position of the crucible 21, the position of the liquid surface of the silicon melt M measured by a CCD camera, etc., the pulling length of the single crystal silicon C, the temperature in the first chamber 11, the silicon Information such as the surface temperature of the molten metal M, the flow rate of inert gas, etc. is performed, and the crucible made of quartz The vertical position of the crucible 21 is moved by the driving mechanism 24.
另外，例如製造300mm的晶圓的情況下，單晶矽C的拉起直徑在考慮不一致的情況下會設定成比300mm稍大的既定值。第4圖係顯示這樣製造的單晶矽C的晶圓狀態下的氧濃度的分布特性的一例。橫軸顯示以晶圓中心為0的直徑方向的位置，縱軸顯示氧濃度(×1017atoms/cm3)。另外，本說明書中所說的氧濃度全部都是規範於ASTM F-121(1979)的FT-IR法(傅立葉轉換紅外分光光度法)所作的測量值。又，本說明書中所說的晶圓外周部是指從晶圓的外周端部往10mm內側的領域。以下的例子中，關於晶圓外周部的氧濃度的下跌，會於第2、3、5圖來顯示從外周端部往內5mm的事例，但這只是做為晶圓外周部的代表例，並不是限定於5mm的位置。根據這個例子，在晶圓的外周部的氧濃度比其他的部位低0.5×1017atoms/cm3左右。隨著晶圓的大徑化，施加水平磁場來控制在石英製的坩堝21內的矽熔液M產生的熱對流，藉此改善拉起直徑的控制性的話，熱對流產生的熔液氧的攪拌執行困難，氧蒸發的表層的熔液會被吸入結晶外周部，而使得結晶外周部的氧濃度容易降低。 In addition, for example, when manufacturing a 300 mm wafer, the pull-up diameter of the single crystal silicon C is set to a predetermined value slightly larger than 300 mm in consideration of inconsistency. FIG. 4 shows an example of the distribution characteristics of the oxygen concentration in the wafer state of the single crystal silicon C manufactured in this way. The horizontal axis shows the position in the diameter direction with the wafer center at 0, and the vertical axis shows the oxygen concentration (× 10 17 atoms / cm 3 ). In addition, all the oxygen concentrations mentioned in this specification are measured values by the FT-IR method (Fourier transform infrared spectrophotometry) standardized in ASTM F-121 (1979). In addition, the outer peripheral portion of the wafer referred to in this specification refers to the area from the outer peripheral end of the wafer to the inner side of 10 mm. In the following example, the decrease in the oxygen concentration at the outer periphery of the wafer will be shown in Figures 2, 3, and 5 from the outer end to the inside 5mm, but this is only a representative example of the outer periphery of the wafer. It is not limited to the position of 5 mm. According to this example, the oxygen concentration at the outer peripheral portion of the wafer is lower by about 0.5 × 10 17 atoms / cm 3 than other portions. As the diameter of the wafer becomes larger, a horizontal magnetic field is applied to control the thermal convection generated by the silicon melt M in the quartz crucible 21, thereby improving the controllability of the pull-up diameter. It is difficult to perform stirring, and the melt of the surface layer evaporated by oxygen is sucked into the outer periphery of the crystal, so that the oxygen concentration in the outer periphery of the crystal is easily reduced.
因此，將磁場產生裝置41的水平磁場強度下降的話，能夠抑制在晶圓的外周部的氧濃度的降低。然而，降低磁場產生裝置41的水平磁場強度的話，因為在石英製的坩堝21內的矽熔液M產生的熱對流的控制性降低，所以拉起速度的控制性下降。又，降低磁場產生裝置41的水平磁場強度的話，因為在石英製的坩堝21內的矽熔液M產生的熱對流的控制性降 低，所以氧濃度上昇。因此即使下降水平磁場強度，也有一定的界限值。 Therefore, when the horizontal magnetic field intensity of the magnetic field generating device 41 is reduced, the decrease in the oxygen concentration in the outer peripheral portion of the wafer can be suppressed. However, if the horizontal magnetic field intensity of the magnetic field generating device 41 is reduced, the controllability of the heat convection generated by the silicon melt M in the quartz crucible 21 decreases, so the controllability of the pull-up speed decreases. Furthermore, if the horizontal magnetic field strength of the magnetic field generating device 41 is reduced, the controllability of the heat convection generated by the silicon melt M in the crucible 21 made of quartz decreases Low, so the oxygen concentration rises. Therefore, even if the horizontal magnetic field strength is decreased, there is a certain limit value.
又，增加拉起時的單晶矽C的結晶旋轉速度(指單以線31讓單晶矽C旋轉的速度，並不是加入石英製的坩堝21的旋轉速度在內的相對旋轉速度)的話，能夠抑制在晶圓的外周部的氧濃度的降低。然而，增大拉起時的單晶矽C的結晶旋轉速度的話，單晶矽C會發生彎曲。又，增大拉起時的單晶矽C的結晶旋轉速度的話，氧濃度會上升。因此即使增大拉起時的單晶矽C的結晶旋轉速度，也有一定的界限值。 In addition, when increasing the crystal rotation speed of the single crystal silicon C at the time of pulling up (refers to the speed at which the single crystal silicon C is rotated by the line 31 alone, it is not a relative rotation speed including the rotation speed of the crucible 21 made of quartz), It is possible to suppress the decrease in the oxygen concentration in the outer peripheral portion of the wafer. However, when the crystal rotation speed of the single crystal silicon C at the time of pulling up is increased, the single crystal silicon C bends. In addition, when the crystal rotation speed of the single crystal silicon C at the time of pulling up is increased, the oxygen concentration increases. Therefore, even if the crystal rotation speed of the single crystal silicon C at the time of pulling up is increased, there is a certain limit value.
另外，拉起的單晶矽的直徑會設定考慮了起因於拉起速度等的控制不均造成的直徑的不均的情況的最小值，加大這個直徑的話，廢棄的量變多、製造良率下降。又，製造裝置1的石英製的坩堝21等的大小也有限制。因此，即使增大拉起時的單晶矽C的直徑，也有一定的界限值。 In addition, the diameter of the pulled single crystal silicon is set to a minimum value considering the unevenness of the diameter caused by the uneven control of the pulling speed, etc. If this diameter is increased, the amount of waste increases and the manufacturing yield decline. In addition, the size of the quartz crucible 21 and the like of the manufacturing apparatus 1 is also limited. Therefore, even if the diameter of the single-crystal silicon C when it is pulled up is increased, there is a certain limit value.
因此，本發明人們對於水平磁場強度單晶矽C的結晶旋轉速度及直徑各自相對於結晶外周部的氧濃度的分布特性有什麼影響，驗證了它們的相關關係。 Therefore, the inventors verified the correlation between the crystal rotation speed and the diameter of the single-crystal silicon C with respect to the distribution characteristics of the oxygen concentration in the outer periphery of the crystal.
第2圖係顯示使用第1圖所示的製造裝置1以既定條件製造單晶矽C的情況下，水平磁場強度、以及在晶圓外周部的氧濃度分布特性之間的關係的一例。橫軸顯示磁場產生裝置41的水平磁場強度(高斯，G，右側表示大，左側表示小)，縱軸顯示在從晶圓的外周端朝向中心5mm的位置(以下也稱為In5)、以及在同樣從晶圓的外周端朝向中心10mm的位置(以下也稱為In10)的氧濃度差(Oi[In10]-Oi[In5]，1017 atoms/cm3)。如上述，可知道降低水平磁場強度的話，氧濃度的差會接近0。 FIG. 2 shows an example of the relationship between the horizontal magnetic field strength and the oxygen concentration distribution characteristic at the outer periphery of the wafer when the single crystal silicon C is manufactured under predetermined conditions using the manufacturing apparatus 1 shown in FIG. 1. The horizontal axis shows the horizontal magnetic field strength of the magnetic field generating device 41 (Gaussian, G, large on the right side, small on the left side), and the vertical axis shows the position 5 mm from the outer peripheral end of the wafer toward the center (hereinafter also referred to as In5), and Similarly, the oxygen concentration difference (Oi [In10] -Oi [In5], 10 17 atoms / cm 3 ) from the outer peripheral end of the wafer toward the center 10 mm (hereinafter also referred to as In10). As mentioned above, it can be known that if the horizontal magnetic field strength is reduced, the difference in oxygen concentration will approach zero.
第3圖係顯示使用第1圖所示的製造裝置1以既定條件製造單晶矽C的情況下，單晶的結晶旋轉速度(稱為單晶C本身的旋轉速度)、以及在晶圓外周部的氧濃度分布特性之間的關係的一例。橫軸顯示單晶的旋轉速度(rpm，右側表示大，左側表示小)，縱軸顯示與第2圖同樣的氧濃度差(Oi[In10]-Oi[In5]，1017atoms/cm3)。如上述，可知道加大結晶旋轉速度的話，氧濃度的差會接近0。 Fig. 3 shows the crystal rotation speed of the single crystal (referred to as the rotation speed of the single crystal C itself) and the outer periphery of the wafer when the single crystal silicon C is manufactured under predetermined conditions using the manufacturing apparatus 1 shown in Fig. 1 An example of the relationship between the oxygen concentration distribution characteristics of the part. The horizontal axis shows the rotation speed of the single crystal (rpm, the right side shows large, the left side shows small), and the vertical axis shows the same oxygen concentration difference as in Figure 2 (Oi [In10] -Oi [In5], 10 17 atoms / cm 3 ) . As described above, it can be known that when the crystal rotation speed is increased, the difference in oxygen concentration becomes close to zero.
第4圖係製造如上述300mm的晶圓的情況下，單晶矽C的晶圓狀態下的氧濃度的分布特性一例。第5圖係使用第4圖所示的結果，假設拉起直徑的外周部的氧濃度的分布特性(氧舉動)不受直徑影響而沒有變化的條件下，推測直徑增加時的氧濃度。橫軸顯示拉起時設定的單晶的直徑(mm，右側表示大，左側表示小)，縱軸顯示與第2圖及第3圖同樣的氧濃度差(Oi[In10]-Oi[In5]，1017atoms/cm3)。如上述，可知道加大拉起時的單晶的直徑的話，氧濃度的差會接近0。 FIG. 4 is an example of the distribution characteristics of the oxygen concentration in the wafer state of the single crystal silicon C when the 300 mm wafer is manufactured as described above. Fig. 5 uses the results shown in Fig. 4 to assume that the oxygen concentration distribution characteristic (oxygen behavior) of the outer diameter of the drawn diameter is not affected by the diameter and does not change, and the oxygen concentration when the diameter is increased is estimated. The horizontal axis shows the diameter of the single crystal set when it is pulled up (mm, the right side indicates large, the left side indicates small), and the vertical axis indicates the same oxygen concentration difference as in Figures 2 and 3 (Oi [In10] -Oi [In5] , 10 17 atoms / cm 3 ). As described above, it is known that when the diameter of the single crystal at the time of pulling up is increased, the difference in oxygen concentration becomes close to zero.
從第2圖~第5圖的結果，可知結晶外周部的氧濃度的分布特性(Oi[In10]-Oi[In5]，1017atoms/cm3)與水平磁場強度、單晶矽C的旋轉速度及直徑分別有關係，因此本發明人們將拉起時的單晶的直徑假設為D(mm)，將水平磁場強度假設為G(高斯)，將拉起時的單晶的結晶旋轉速度假設為V(rpm)，將在晶圓外周部的氧濃度的分布特性假設為δ(1017atoms/cm3)，假設a、b、c、d為常數，定義出以下的相關式： [數1]δ=aD+bG+cV+d…(式1) From the results of Figure 2 to Figure 5, the distribution characteristics of the oxygen concentration in the outer periphery of the crystal (Oi [In10] -Oi [In5], 10 17 atoms / cm 3 ), the horizontal magnetic field strength, and the rotation of the single crystal silicon C The speed and the diameter are related, so the inventors assume that the diameter of the single crystal when it is pulled up is D (mm), the horizontal magnetic field strength is G (Gaussian), and the crystal rotation speed of the single crystal when it is pulled up. V (rpm), assuming that the distribution characteristic of the oxygen concentration at the outer periphery of the wafer is δ (10 17 atoms / cm 3 ), assuming a, b, c, and d are constants, the following correlation formula is defined: [Number 1] δ = aD + bG + cV + d… (Equation 1)
其中常數a、b、c、d相當於對於水平磁場強度、單晶矽的旋轉速度及直徑的權重。 The constants a, b, c, and d correspond to the weight of the horizontal magnetic field strength, the rotation speed and diameter of the single crystal silicon.
然後，在每個單晶矽的製造裝置1的既定的製造條件下預先求出常數a、b、c、d，將在晶圓外周部的氧濃度的分布特性δ的界限值(也可以是容許值)、水平磁場強度的界限值、拉起時的單結晶的結晶旋轉速度的界限值代入上式1，將求出的單晶矽的直徑D(=(δ-bG-cV-d)/a)，設定為要拉起的單晶矽C的直徑。 Then, the constants a, b, c, and d are obtained in advance under the predetermined manufacturing conditions of the manufacturing device 1 for each single crystal silicon, and the limit value of the distribution characteristic δ of the oxygen concentration at the outer periphery of the wafer (may also be Allowable value), the limit value of the horizontal magnetic field strength, and the limit value of the crystal rotation speed of the single crystal at the time of pulling are substituted into the above formula 1, and the diameter D (= (δ-bG-cV-d) of the single crystal silicon obtained / a), set to the diameter of the single crystal silicon C to be pulled up.
在此，所謂在晶圓外周部的氧濃度的分布特性δ的界限值(容許值)是指做為產品的晶圓所被容許的外周部的氧濃度的分布值(下跌值)的最大值，是因應裝置等而設定的產品出貨基準等。例如Oi[In10]-Oi[In5]=0.5×1017atoms/cm3。又，所謂水平磁場強度的界限值是指如上述考慮了拉起速度的控制性或氧濃度的增加的下限值，根據經驗值或模擬而對每個單晶矽的製造裝置1的每次製造條件設定。例如2000G、3000G或4000G。又，所謂拉起時的單晶的結晶旋轉速度的界限值是指考慮了彎曲或氧濃度的增加的上限值，根據經驗值或模擬而對每個單晶矽的製造裝置1的每次製造條件設定。例如8rpm、9rpm、10rpm、12rpm或15rpm。 Here, the limit value (permissible value) of the distribution characteristic δ of the oxygen concentration on the outer periphery of the wafer refers to the maximum value of the distribution value (falling value) of the oxygen concentration that is allowed on the outer periphery of the wafer as a product , Is the product shipping standard set according to the device, etc. For example, Oi [In10] -Oi [In5] = 0.5 × 10 17 atoms / cm 3 . In addition, the limit value of the horizontal magnetic field strength refers to the lower limit value considering the controllability of the pull-up speed or the increase in oxygen concentration as described above, and each time for each manufacturing device 1 of single crystal silicon based on empirical values or simulations Manufacturing condition setting. For example, 2000G, 3000G, or 4000G. In addition, the limit value of the crystal rotation speed of the single crystal at the time of pulling up refers to the upper limit value considering the bending or the increase in the oxygen concentration, and each time for each single crystal silicon manufacturing apparatus 1 based on empirical values or simulations Manufacturing condition setting. For example, 8 rpm, 9 rpm, 10 rpm, 12 rpm, or 15 rpm.
藉由回歸分析第2圖~第5圖所示的實例，求出式1的常數a、b、c、d，如下：[數2] δ=-0.0166D+0.0005G-0.4836V+8.1984…(式2) By regression analysis of the examples shown in Figures 2 to 5, find the constants a, b, c, and d in Equation 1, as follows: [Number 2] δ = -0.0166D + 0.0005G-0.4836V + 8.1984… (Formula 2)
上述式2中，將在晶圓外周部的氧濃度的分布特性δ的界限值(容許值)以0.1×1017atoms/cm3，將水平磁場強度的界限值以2500G，將拉起時的單晶的結晶旋轉速度的界限值以8rpm代入上述式2，藉此求出單晶矽的直徑D為330mm。以這個直徑D為設定值來製造單晶矽的話，能夠得到一種晶棒，滿足在晶圓外周部的氧濃度的分布特性在0.5×1017atoms/cm3以下，拉起速度的控制性良好，氧濃度的增加或彎曲被抑制，又加工到規定直徑時所廢棄的外周部的量變為最小。 In the above formula 2, the limit value (permissible value) of the distribution characteristic δ of the oxygen concentration on the outer periphery of the wafer is set to 0.1 × 10 17 atoms / cm 3 , and the limit value of the horizontal magnetic field strength is set to 2500G. The limit value of the crystal rotation speed of the single crystal was substituted into the above Equation 2 at 8 rpm, and the diameter D of the single crystal silicon was determined to be 330 mm. When single-crystal silicon is manufactured with this diameter D as the set value, a crystal ingot can be obtained, which satisfies the distribution characteristic of the oxygen concentration at the outer periphery of the wafer at 0.5 × 10 17 atoms / cm 3 or less, and the controllability of the pull-up speed is good , The increase in oxygen concentration or bending is suppressed, and the amount of the outer peripheral portion discarded when processed to a predetermined diameter becomes minimum.
在上述例子中，將在晶圓外周部的氧濃度的分布特性δ的界限值、水平磁場強度的界限值、以及拉起時的單晶的結晶旋轉速度的界限值代入式2，藉此求出單晶矽的直徑D，但也除此之外，也可以將在晶圓外周部的氧濃度的分布特性δ的界限值、單晶矽的直徑的界限值、以及拉起時的單晶的結晶旋轉速度的界限值代入式2，藉此求出水平磁場強度，設定求出來的水平磁場強度來製造單晶矽。或者是除此之外，也可以也可以將在晶圓外周部的氧濃度的分布特性δ的界限值、單晶矽的直徑的界限值、以及水平磁場強度的界限值代入式2，藉此求出拉起時的單晶的結晶旋轉速度，設定求出來的結晶旋轉速度來製造單晶矽。 In the above example, the limit value of the distribution characteristic δ of the oxygen concentration at the outer periphery of the wafer, the limit value of the horizontal magnetic field strength, and the limit value of the crystal rotation speed of the single crystal at the time of pulling are substituted into Equation 2 to obtain The diameter D of the single crystal silicon is obtained, but in addition to this, the limit value of the distribution characteristic δ of the oxygen concentration at the outer periphery of the wafer, the limit value of the diameter of the single crystal silicon, and the single crystal at the time of pulling up The limit value of the rotation speed of the crystal is substituted into Equation 2, whereby the horizontal magnetic field strength is obtained, and the determined horizontal magnetic field strength is set to manufacture single crystal silicon. Or in addition to this, the limit value of the distribution characteristic δ of the oxygen concentration at the outer periphery of the wafer, the limit value of the diameter of the single crystal silicon, and the limit value of the horizontal magnetic field strength may also be substituted into Equation 2 to thereby The crystal rotation speed of the single crystal at the time of pulling is obtained, and the obtained crystal rotation speed is set to produce single crystal silicon.
1‧‧‧單晶矽的製造裝置 1‧‧‧Single crystal silicon manufacturing equipment
11‧‧‧第1腔室 11‧‧‧ First chamber
12‧‧‧第2腔室 12‧‧‧ 2nd chamber
13‧‧‧氣體導入口 13‧‧‧Gas inlet
14‧‧‧氣體排出口 14‧‧‧ gas outlet
21‧‧‧石英製的坩堝 21‧‧‧Crucible made of quartz
22‧‧‧石墨製的坩堝 22‧‧‧Graphite crucible
23‧‧‧支持軸 23‧‧‧Support shaft
24‧‧‧驅動機構 24‧‧‧Drive mechanism
25‧‧‧加熱器 25‧‧‧heater
26‧‧‧保溫筒 26‧‧‧Insulation tube
27‧‧‧熱遮蔽構件 27‧‧‧heat shielding member
28‧‧‧托架 28‧‧‧Bracket
31‧‧‧線 31‧‧‧ line
32‧‧‧拉起機構 32‧‧‧Pulling mechanism
41‧‧‧磁場產生裝置 41‧‧‧ magnetic field generating device
C‧‧‧單晶矽 C‧‧‧Single crystal silicon
M‧‧‧矽熔液 M‧‧‧silicon melt
S‧‧‧種晶 S‧‧‧ Seed crystal
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| JPH06172080A (en) * | 1992-12-02 | 1994-06-21 | Kawasaki Steel Corp | Method for pulling-up single crystal |
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