TWI631825B - 具有降低功率消耗之濾波輻射強化正反器 - Google Patents

具有降低功率消耗之濾波輻射強化正反器 Download PDF

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Publication number
TWI631825B
TWI631825B TW103120996A TW103120996A TWI631825B TW I631825 B TWI631825 B TW I631825B TW 103120996 A TW103120996 A TW 103120996A TW 103120996 A TW103120996 A TW 103120996A TW I631825 B TWI631825 B TW I631825B
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Taiwan
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stage
flip
flop
filter
input
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TW103120996A
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English (en)
Chinese (zh)
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TW201524123A (zh
Inventor
赫爾曼 曼努爾Ｆ 卡班那斯
伊桑 坎儂
薩琳Ａ 拉巴
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波音公司
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Publication of TW201524123A publication Critical patent/TW201524123A/zh
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Publication of TWI631825B publication Critical patent/TWI631825B/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails

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  • Pulse Circuits (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW103120996A 2013-09-11 2014-06-18 具有降低功率消耗之濾波輻射強化正反器 TWI631825B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/024,310 2013-09-11
US14/024,310 US9013219B2 (en) 2013-09-11 2013-09-11 Filtered radiation hardened flip flop with reduced power consumption

Publications (2)

Publication Number Publication Date
TW201524123A TW201524123A (zh) 2015-06-16
TWI631825B true TWI631825B (zh) 2018-08-01

Family

ID=52625008

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103120996A TWI631825B (zh) 2013-09-11 2014-06-18 具有降低功率消耗之濾波輻射強化正反器

Country Status (6)

Country Link
US (1) US9013219B2 (enExample)
JP (1) JP6438237B2 (enExample)
CN (1) CN104426532B (enExample)
AU (1) AU2014203283B2 (enExample)
SG (1) SG10201405181VA (enExample)
TW (1) TWI631825B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11374567B2 (en) * 2017-02-11 2022-06-28 Klas Olof Lilja Circuit for low power, radiation hard logic cell
SG11202005673VA (en) * 2017-12-29 2020-07-29 Bae Systems Radiation-hardened d flip-flop circuit
CN111656688B (zh) 2018-01-22 2024-12-31 卓思私人有限公司 用于设定电路晶体管的宽长比的方法、电路及电路布置
CN112119591B (zh) 2018-03-19 2024-12-20 南洋理工大学 电路布置及其形成方法
WO2019235363A1 (ja) * 2018-06-04 2019-12-12 国立大学法人京都工芸繊維大学 Ｄ型フリップフロップ回路
US12294363B2 (en) 2019-10-08 2025-05-06 Zero-Error Systems Pte. Ltd Circuit for mitigating single-event-transients
US11177795B1 (en) * 2020-04-22 2021-11-16 Xilinx, Inc. Master latch design for single event upset flip-flop
US11601119B2 (en) 2020-12-18 2023-03-07 The Boeing Company Radiation hardened flip-flop circuit for mitigating single event transients
CN112737560B (zh) * 2020-12-24 2022-09-13 中国人民解放军国防科技大学 一种无频率损耗的集成电路抗单粒子瞬态加固方法
JP2023034938A (ja) * 2021-08-31 2023-03-13 ローム株式会社 フリップフロップ回路、半導体集積回路装置、及び車両
CN120567108B (zh) * 2025-07-30 2025-10-03 中国电子科技集团公司第五十八研究所 一种基于互连线串扰计算的抗辐照d触发器

Citations (7)

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US5831463A (en) * 1995-08-14 1998-11-03 U.S. Philips Corporation MOS master-slave flip-flop with reduced number of pass gates
US6429713B2 (en) * 2000-02-24 2002-08-06 Ando Electric Co., Ltd. D-FF circuit
TW200737225A (en) * 2006-03-27 2007-10-01 Honeywell Int Inc Radiation-hardened memory element with multiple delay elements
CN101610078A (zh) * 2008-06-17 2009-12-23 东部高科股份有限公司 双模边沿触发的触发器
US20110025372A1 (en) * 2009-07-29 2011-02-03 The Boeing Company Method and apparatus for reducing radiation and cross-talk induced data errors
US20110102042A1 (en) * 2007-09-19 2011-05-05 International Business Machines Corporation Apparatus and method for hardening latches in soi cmos devices
TW201237882A (en) * 2011-03-10 2012-09-16 Advanced Risc Mach Ltd Storage circuitry and method with increased resilience to single event upsets

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US7523371B2 (en) * 2004-06-30 2009-04-21 Intel Corporation System and shadow bistable circuits coupled to output joining circuit
JP4551731B2 (ja) * 2004-10-15 2010-09-29 株式会社東芝 半導体集積回路
US20060267653A1 (en) 2005-05-25 2006-11-30 Honeywell International Inc. Single-event-effect hardened circuitry
JP4332652B2 (ja) * 2005-12-12 2009-09-16 独立行政法人 宇宙航空研究開発機構 シングルイベント耐性のラッチ回路及びフリップフロップ回路
US20080115023A1 (en) * 2006-10-27 2008-05-15 Honeywell International Inc. Set hardened register
US7795927B2 (en) 2007-08-17 2010-09-14 Raytheon Company Digital circuits with adaptive resistance to single event upset
CN101499788A (zh) * 2009-02-19 2009-08-05 上海交通大学 抗单粒子翻转和单粒子瞬态脉冲的d触发器
JP5372613B2 (ja) * 2009-06-18 2013-12-18 株式会社日立製作所 フリップフロップ、半導体集積回路、半導体デバイスおよびブレードサーバ
JP2012023436A (ja) * 2010-07-12 2012-02-02 Nippon Telegr & Teleph Corp <Ntt> 多チャンネルｏｓｎｒモニタ
CN102394595B (zh) * 2011-10-21 2013-12-11 中国人民解放军国防科学技术大学 抗单粒子翻转的可置位和复位d触发器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831463A (en) * 1995-08-14 1998-11-03 U.S. Philips Corporation MOS master-slave flip-flop with reduced number of pass gates
US6429713B2 (en) * 2000-02-24 2002-08-06 Ando Electric Co., Ltd. D-FF circuit
TW200737225A (en) * 2006-03-27 2007-10-01 Honeywell Int Inc Radiation-hardened memory element with multiple delay elements
US20110102042A1 (en) * 2007-09-19 2011-05-05 International Business Machines Corporation Apparatus and method for hardening latches in soi cmos devices
CN101610078A (zh) * 2008-06-17 2009-12-23 东部高科股份有限公司 双模边沿触发的触发器
US20110025372A1 (en) * 2009-07-29 2011-02-03 The Boeing Company Method and apparatus for reducing radiation and cross-talk induced data errors
TW201237882A (en) * 2011-03-10 2012-09-16 Advanced Risc Mach Ltd Storage circuitry and method with increased resilience to single event upsets

Also Published As

Publication number Publication date
US9013219B2 (en) 2015-04-21
AU2014203283B2 (en) 2018-10-18
JP2015056892A (ja) 2015-03-23
AU2014203283A1 (en) 2015-03-26
TW201524123A (zh) 2015-06-16
US20150070062A1 (en) 2015-03-12
SG10201405181VA (en) 2015-04-29
CN104426532A (zh) 2015-03-18
JP6438237B2 (ja) 2018-12-12
CN104426532B (zh) 2019-06-28

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