JP6438237B2 - 消費電力を低減したフィルタ付き放射線耐性フリップフロップ - Google Patents

消費電力を低減したフィルタ付き放射線耐性フリップフロップ Download PDF

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JP6438237B2
JP6438237B2 JP2014173585A JP2014173585A JP6438237B2 JP 6438237 B2 JP6438237 B2 JP 6438237B2 JP 2014173585 A JP2014173585 A JP 2014173585A JP 2014173585 A JP2014173585 A JP 2014173585A JP 6438237 B2 JP6438237 B2 JP 6438237B2
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stage
flip
input
gate
output
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JP2015056892A (ja
JP2015056892A5 (enExample
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エフ・カバニャス−ホルメン マヌエル
エフ・カバニャス−ホルメン マヌエル
キャノン イーサン
キャノン イーサン
エー・ラバー サリム
エー・ラバー サリム
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
JP2014173585A 2013-09-11 2014-08-28 消費電力を低減したフィルタ付き放射線耐性フリップフロップ Active JP6438237B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/024,310 2013-09-11
US14/024,310 US9013219B2 (en) 2013-09-11 2013-09-11 Filtered radiation hardened flip flop with reduced power consumption

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JP2015056892A JP2015056892A (ja) 2015-03-23
JP2015056892A5 JP2015056892A5 (enExample) 2017-01-26
JP6438237B2 true JP6438237B2 (ja) 2018-12-12

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JP2014173585A Active JP6438237B2 (ja) 2013-09-11 2014-08-28 消費電力を低減したフィルタ付き放射線耐性フリップフロップ

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US (1) US9013219B2 (enExample)
JP (1) JP6438237B2 (enExample)
CN (1) CN104426532B (enExample)
AU (1) AU2014203283B2 (enExample)
SG (1) SG10201405181VA (enExample)
TW (1) TWI631825B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11374567B2 (en) * 2017-02-11 2022-06-28 Klas Olof Lilja Circuit for low power, radiation hard logic cell
SG11202005673VA (en) * 2017-12-29 2020-07-29 Bae Systems Radiation-hardened d flip-flop circuit
CN111656688B (zh) 2018-01-22 2024-12-31 卓思私人有限公司 用于设定电路晶体管的宽长比的方法、电路及电路布置
CN112119591B (zh) 2018-03-19 2024-12-20 南洋理工大学 电路布置及其形成方法
WO2019235363A1 (ja) * 2018-06-04 2019-12-12 国立大学法人京都工芸繊維大学 Ｄ型フリップフロップ回路
US12294363B2 (en) 2019-10-08 2025-05-06 Zero-Error Systems Pte. Ltd Circuit for mitigating single-event-transients
US11177795B1 (en) * 2020-04-22 2021-11-16 Xilinx, Inc. Master latch design for single event upset flip-flop
US11601119B2 (en) 2020-12-18 2023-03-07 The Boeing Company Radiation hardened flip-flop circuit for mitigating single event transients
CN112737560B (zh) * 2020-12-24 2022-09-13 中国人民解放军国防科技大学 一种无频率损耗的集成电路抗单粒子瞬态加固方法
JP2023034938A (ja) * 2021-08-31 2023-03-13 ローム株式会社 フリップフロップ回路、半導体集積回路装置、及び車両
CN120567108B (zh) * 2025-07-30 2025-10-03 中国电子科技集团公司第五十八研究所 一种基于互连线串扰计算的抗辐照d触发器

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EP0786170A1 (en) * 1995-08-14 1997-07-30 Koninklijke Philips Electronics N.V. Mos master-slave flip-flop with reduced number of pass gates
JP2001237675A (ja) * 2000-02-24 2001-08-31 Ando Electric Co Ltd Ｄ−ｆｆ回路
US7523371B2 (en) * 2004-06-30 2009-04-21 Intel Corporation System and shadow bistable circuits coupled to output joining circuit
JP4551731B2 (ja) * 2004-10-15 2010-09-29 株式会社東芝 半導体集積回路
US20060267653A1 (en) 2005-05-25 2006-11-30 Honeywell International Inc. Single-event-effect hardened circuitry
JP4332652B2 (ja) * 2005-12-12 2009-09-16 独立行政法人 宇宙航空研究開発機構 シングルイベント耐性のラッチ回路及びフリップフロップ回路
US8767444B2 (en) * 2006-03-27 2014-07-01 Honeywell International Inc. Radiation-hardened memory element with multiple delay elements
US20080115023A1 (en) * 2006-10-27 2008-05-15 Honeywell International Inc. Set hardened register
US7795927B2 (en) 2007-08-17 2010-09-14 Raytheon Company Digital circuits with adaptive resistance to single event upset
US7888959B2 (en) * 2007-09-19 2011-02-15 International Business Machines Corporation Apparatus and method for hardening latches in SOI CMOS devices
KR20090131010A (ko) * 2008-06-17 2009-12-28 주식회사 동부하이텍 듀얼 모드 에지 트리거 플립플롭
CN101499788A (zh) * 2009-02-19 2009-08-05 上海交通大学 抗单粒子翻转和单粒子瞬态脉冲的d触发器
JP5372613B2 (ja) * 2009-06-18 2013-12-18 株式会社日立製作所 フリップフロップ、半導体集積回路、半導体デバイスおよびブレードサーバ
US8054099B2 (en) * 2009-07-29 2011-11-08 The Boeing Company Method and apparatus for reducing radiation and cross-talk induced data errors
JP2012023436A (ja) * 2010-07-12 2012-02-02 Nippon Telegr & Teleph Corp <Ntt> 多チャンネルｏｓｎｒモニタ
US8493120B2 (en) * 2011-03-10 2013-07-23 Arm Limited Storage circuitry and method with increased resilience to single event upsets
CN102394595B (zh) * 2011-10-21 2013-12-11 中国人民解放军国防科学技术大学 抗单粒子翻转的可置位和复位d触发器

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Publication number Publication date
TWI631825B (zh) 2018-08-01
US9013219B2 (en) 2015-04-21
AU2014203283B2 (en) 2018-10-18
JP2015056892A (ja) 2015-03-23
AU2014203283A1 (en) 2015-03-26
TW201524123A (zh) 2015-06-16
US20150070062A1 (en) 2015-03-12
SG10201405181VA (en) 2015-04-29
CN104426532A (zh) 2015-03-18
CN104426532B (zh) 2019-06-28

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