TWI628729B - 具有可客製之流動注入之磊晶腔室 - Google Patents

具有可客製之流動注入之磊晶腔室 Download PDF

Info

Publication number
TWI628729B
TWI628729B TW102136586A TW102136586A TWI628729B TW I628729 B TWI628729 B TW I628729B TW 102136586 A TW102136586 A TW 102136586A TW 102136586 A TW102136586 A TW 102136586A TW I628729 B TWI628729 B TW I628729B
Authority
TW
Taiwan
Prior art keywords
outlets
gas
substrate
process gas
injector
Prior art date
Application number
TW102136586A
Other languages
English (en)
Chinese (zh)
Other versions
TW201419438A (zh
Inventor
劉樹寬
叢哲鵬
薩米爾梅莫特圖格魯爾
葉祉淵
卡爾森大衛Ｋ
李學斌
桑徹斯艾羅安東尼歐Ｃ
史林尼法森史瓦米奈森
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201419438A publication Critical patent/TW201419438A/zh
Application granted granted Critical
Publication of TWI628729B publication Critical patent/TWI628729B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW102136586A 2012-10-26 2013-10-09 具有可客製之流動注入之磊晶腔室 TWI628729B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261719009P 2012-10-26 2012-10-26
US61/719,009 2012-10-26
US14/047,047 US20140137801A1 (en) 2012-10-26 2013-10-07 Epitaxial chamber with customizable flow injection
US14/047,047 2013-10-07

Publications (2)

Publication Number Publication Date
TW201419438A TW201419438A (zh) 2014-05-16
TWI628729B true TWI628729B (zh) 2018-07-01

Family

ID=50545102

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102136586A TWI628729B (zh) 2012-10-26 2013-10-09 具有可客製之流動注入之磊晶腔室

Country Status (7)

Country Link
US (2) US20140137801A1 (OSRAM)
JP (1) JP6281958B2 (OSRAM)
KR (1) KR102135229B1 (OSRAM)
CN (1) CN104756231B (OSRAM)
SG (2) SG11201502761RA (OSRAM)
TW (1) TWI628729B (OSRAM)
WO (1) WO2014066033A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI775073B (zh) * 2020-05-07 2022-08-21 台灣積體電路製造股份有限公司 光固化的方法及其設備

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US9840778B2 (en) * 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
US10344380B2 (en) 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
CN105981133B (zh) * 2014-02-14 2019-06-28 应用材料公司 具有注入组件的上部圆顶
WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
JP6629248B2 (ja) * 2014-06-20 2020-01-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャルチャンバへのガス注入装置
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
US10760161B2 (en) 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
JP6402058B2 (ja) * 2015-03-23 2018-10-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
CN107690487B (zh) * 2015-06-12 2021-03-09 应用材料公司 用于半导体外延生长的注射器
KR102350588B1 (ko) 2015-07-07 2022-01-14 삼성전자 주식회사 인젝터를 갖는 박막 형성 장치
EP3449500A4 (en) * 2016-04-25 2020-04-22 Applied Materials, Inc. CHEMICAL DISTRIBUTION CHAMBER FOR SINGLE-ASSEMBLED SINGLE-LAYER TREATMENTS
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
DE102016211614A1 (de) * 2016-06-28 2017-12-28 Siltronic Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Halbleiterscheiben
WO2018022137A1 (en) * 2016-07-28 2018-02-01 Applied Materials, Inc. Gas purge system and method for outgassing control
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
JP6773880B2 (ja) * 2017-02-23 2020-10-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、コンピュータプログラムおよび処理容器
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
US11077410B2 (en) * 2017-10-09 2021-08-03 Applied Materials, Inc. Gas injector with baffle
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
CN214848503U (zh) * 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
JP6902060B2 (ja) 2019-02-13 2021-07-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、およびプログラム
JP7159986B2 (ja) * 2019-06-27 2022-10-25 株式会社Sumco エピタキシャル成長装置およびエピタキシャルウェーハの製造方法
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN111455458B (zh) * 2019-09-18 2021-11-16 北京北方华创微电子装备有限公司 外延装置及应用于外延装置的进气结构
DE102020103946A1 (de) 2020-02-14 2021-08-19 AIXTRON Ltd. Gaseinlasseinrichtung für einen CVD-Reaktor
EP4074861A1 (de) 2021-04-13 2022-10-19 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer
EP4337814A4 (en) * 2021-05-11 2025-10-08 Applied Materials Inc GAS INJECTOR FOR EPITAXY AND CHEMICAL VAPOR DEPOSITION CHAMBER
US12060651B2 (en) * 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
KR20240093998A (ko) * 2021-11-03 2024-06-24 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버를 위한 주입 모듈
US20240141493A1 (en) * 2022-10-27 2024-05-02 Applied Materials, Inc. Single piece or two piece susceptor
DE102023107111A1 (de) * 2022-12-09 2024-06-20 Aixtron Se Vorrichtung zum Abscheiden von SiC-Schichten auf einem Substrat mit einem verstellbaren Gasaustrittselement
WO2024121230A1 (de) 2022-12-09 2024-06-13 Aixtron Se VORRICHTUNG ZUM ABSCHEIDEN VON SiC-SCHICHTEN AUF EINEM SUBSTRAT MIT EINEM VERSTELLBAREN GASAUSTRITTSELEMENT
US20240218562A1 (en) * 2022-12-30 2024-07-04 Globalwafers Co., Ltd. Methods of processing epitaxial semiconductor wafers
US20240360588A1 (en) * 2023-04-25 2024-10-31 Applied Materials, Inc. Macrocell architectural structures for heat exchange in epitaxial growth processing equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032169A (ja) * 1996-07-17 1998-02-03 Nippon Sanso Kk 気相成長方法及び装置
JP2010040541A (ja) * 2008-07-31 2010-02-18 Sumco Corp エピタキシャル装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653633B1 (fr) * 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
JP4381489B2 (ja) * 1997-06-24 2009-12-09 ソニー株式会社 化学気相成長装置
US6291800B1 (en) * 1998-02-20 2001-09-18 Tokyo Electron Limited Heat treatment apparatus and substrate processing system
JP3203225B2 (ja) * 1998-02-23 2001-08-27 東京エレクトロン株式会社 熱処理装置
JP2000331939A (ja) * 1999-05-17 2000-11-30 Applied Materials Inc 成膜装置
US6656831B1 (en) * 2000-01-26 2003-12-02 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of a metal nitride layer
AU2002226329B2 (en) * 2000-11-11 2006-02-02 Haldor Topsoe A/S Improved hydroprocessing process and method of retrofitting existing hydroprocessing reactors
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US20070137794A1 (en) * 2003-09-24 2007-06-21 Aviza Technology, Inc. Thermal processing system with across-flow liner
KR100578136B1 (ko) * 2004-01-27 2006-05-10 삼성전자주식회사 플라즈마로 강화된 반도체 증착 장비
TW200729300A (en) * 2005-11-30 2007-08-01 Nuflare Technology Inc Film-forming method and film-forming equipment
CA2677857A1 (en) * 2007-04-24 2008-11-06 Linde North America, Inc. Flash processing of asphaltic residual oil
US20100108263A1 (en) * 2008-10-30 2010-05-06 Applied Materials, Inc. Extended chamber liner for improved mean time between cleanings of process chambers
JP5268766B2 (ja) * 2009-04-23 2013-08-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置及び成膜基板製造方法
JP2010263112A (ja) * 2009-05-08 2010-11-18 Sumco Corp エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法
US9127360B2 (en) * 2009-10-05 2015-09-08 Applied Materials, Inc. Epitaxial chamber with cross flow

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032169A (ja) * 1996-07-17 1998-02-03 Nippon Sanso Kk 気相成長方法及び装置
JP2010040541A (ja) * 2008-07-31 2010-02-18 Sumco Corp エピタキシャル装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI775073B (zh) * 2020-05-07 2022-08-21 台灣積體電路製造股份有限公司 光固化的方法及其設備

Also Published As

Publication number Publication date
WO2014066033A1 (en) 2014-05-01
US20140137801A1 (en) 2014-05-22
SG10201703437WA (en) 2017-05-30
TW201419438A (zh) 2014-05-16
JP2015534283A (ja) 2015-11-26
KR20150074165A (ko) 2015-07-01
CN104756231A (zh) 2015-07-01
CN104756231B (zh) 2020-08-28
KR102135229B1 (ko) 2020-07-17
US20180209043A1 (en) 2018-07-26
JP6281958B2 (ja) 2018-02-21
SG11201502761RA (en) 2015-06-29

Similar Documents

Publication Publication Date Title
TWI628729B (zh) 具有可客製之流動注入之磊晶腔室
TWI512871B (zh) 具交叉流之磊晶腔室
TWI615500B (zh) 用於操控磊晶沉積腔室流量的注入及排放設計
CN103597580B (zh) 用于将材料沉积在基板上的设备
CN104205290B (zh) 气体输送系统和气体输送系统的使用方法
KR101699815B1 (ko) 기상 성장 장치
US20080283086A1 (en) Substrate processing apparatus and cleaning method therefor
US20200203149A1 (en) Method of growing doped group iv materials
JP2000349030A (ja) 気相反応装置
US20150329969A1 (en) Uniformity and selectivity of low gas flow velocity processes in a cross flow epitaxy chamber with the use of alternative highly reactive precursors though an alternative path
CN111128696A (zh) 外延硅晶片的制造方法及外延硅晶片
JPH02152224A (ja) 気相成長装置
JPH01144624A (ja) 半導体の製造方法
KR20160149753A (ko) 박막증착방법 및 박막증착구조