TWI625789B - 矽 Wafer manufacturing method - Google Patents

矽 Wafer manufacturing method Download PDF

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Publication number
TWI625789B
TWI625789B TW105100715A TW105100715A TWI625789B TW I625789 B TWI625789 B TW I625789B TW 105100715 A TW105100715 A TW 105100715A TW 105100715 A TW105100715 A TW 105100715A TW I625789 B TWI625789 B TW I625789B
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TW
Taiwan
Prior art keywords
wafer
processed
heat treatment
tantalum wafer
temperature
Prior art date
Application number
TW105100715A
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English (en)
Chinese (zh)
Other versions
TW201639036A (zh
Inventor
鈴木克佳
竹野博
江原幸治
Original Assignee
信越半導體股份有限公司
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Publication of TW201639036A publication Critical patent/TW201639036A/zh
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Publication of TWI625789B publication Critical patent/TWI625789B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H10P34/00—
    • H10P36/00—
    • H10P95/90—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW105100715A 2015-02-19 2016-01-11 矽 Wafer manufacturing method TWI625789B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015030213A JP6044660B2 (ja) 2015-02-19 2015-02-19 シリコンウェーハの製造方法
JP2015-030213 2015-02-19

Publications (2)

Publication Number Publication Date
TW201639036A TW201639036A (zh) 2016-11-01
TWI625789B true TWI625789B (zh) 2018-06-01

Family

ID=56689388

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105100715A TWI625789B (zh) 2015-02-19 2016-01-11 矽 Wafer manufacturing method

Country Status (7)

Country Link
US (1) US10297463B2 (enExample)
JP (1) JP6044660B2 (enExample)
KR (1) KR102317547B1 (enExample)
CN (1) CN107210223B (enExample)
DE (1) DE112016000465B4 (enExample)
TW (1) TWI625789B (enExample)
WO (1) WO2016132661A1 (enExample)

Families Citing this family (13)

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WO2017058152A1 (en) * 2015-09-29 2017-04-06 Kimberly-Clark Worldwide, Inc. Materials that shrink in one dimension and expand in another dimension
JP6810591B2 (ja) * 2016-12-12 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス シリコン基板の熱処理方法
DE102016225138A1 (de) * 2016-12-15 2018-06-21 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium
JP6731161B2 (ja) * 2017-04-26 2020-07-29 信越半導体株式会社 シリコン単結晶の欠陥領域特定方法
CN109576795A (zh) * 2017-09-29 2019-04-05 胜高股份有限公司 硅外延晶片的制备方法
CN109576796A (zh) * 2017-09-29 2019-04-05 胜高股份有限公司 硅外延晶片的制备方法
JP7057122B2 (ja) * 2017-12-22 2022-04-19 グローバルウェーハズ・ジャパン株式会社 金属汚染評価方法
JP6897598B2 (ja) * 2018-02-16 2021-06-30 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
DE102018203945B4 (de) 2018-03-15 2023-08-10 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben
KR102741720B1 (ko) * 2019-04-16 2024-12-11 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼
JP7207204B2 (ja) * 2019-07-02 2023-01-18 信越半導体株式会社 炭素ドープシリコン単結晶ウェーハの製造方法
CN110571172A (zh) * 2019-09-06 2019-12-13 大同新成新材料股份有限公司 一种硅晶圆制造方法及制造装置
EP4151782B1 (de) * 2021-09-16 2024-02-21 Siltronic AG Verfahren zur herstellung einer halbleiterscheibe aus einkristallinem silizium und halbleiterscheibe aus einkristallinem silizium

Citations (4)

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US20090242843A1 (en) * 2006-06-20 2009-10-01 Shin-Etsu Handotai Co., Ltd Method for Manufacturing Silicon Wafer and Silicon Wafer Manufactured by this Method
US20100105191A1 (en) * 2007-02-26 2010-04-29 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal wafer
US20120001301A1 (en) * 2009-04-13 2012-01-05 Shin-Etsu Handotai Co., Ltd. Annealed wafer, method for producing annealed wafer and method for fabricating device
US20130093060A1 (en) * 2010-07-14 2013-04-18 Shin-Etsu Handotai Co., Ltd. Method for producing silicon wafer and silicon wafer

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US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
KR20040102230A (ko) 1997-04-09 2004-12-03 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 저결함밀도, 이상적 산소침전 실리콘
US5882989A (en) 1997-09-22 1999-03-16 Memc Electronic Materials, Inc. Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
KR100378184B1 (ko) 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
JP4720058B2 (ja) * 2000-11-28 2011-07-13 株式会社Sumco シリコンウェーハの製造方法
JP2003297839A (ja) * 2002-04-03 2003-10-17 Sumitomo Mitsubishi Silicon Corp シリコンウエーハの熱処理方法
JP4699675B2 (ja) * 2002-10-08 2011-06-15 信越半導体株式会社 アニールウェーハの製造方法
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JP5613994B2 (ja) * 2009-04-14 2014-10-29 株式会社Sumco シリコンウェーハおよびその製造方法
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US20090242843A1 (en) * 2006-06-20 2009-10-01 Shin-Etsu Handotai Co., Ltd Method for Manufacturing Silicon Wafer and Silicon Wafer Manufactured by this Method
US20100105191A1 (en) * 2007-02-26 2010-04-29 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal wafer
US20120001301A1 (en) * 2009-04-13 2012-01-05 Shin-Etsu Handotai Co., Ltd. Annealed wafer, method for producing annealed wafer and method for fabricating device
US20130093060A1 (en) * 2010-07-14 2013-04-18 Shin-Etsu Handotai Co., Ltd. Method for producing silicon wafer and silicon wafer

Also Published As

Publication number Publication date
US10297463B2 (en) 2019-05-21
JP2016152370A (ja) 2016-08-22
DE112016000465B4 (de) 2022-01-27
DE112016000465T5 (de) 2017-09-28
US20180247830A1 (en) 2018-08-30
KR102317547B1 (ko) 2021-10-27
KR20170117418A (ko) 2017-10-23
TW201639036A (zh) 2016-11-01
JP6044660B2 (ja) 2016-12-14
CN107210223B (zh) 2020-08-21
WO2016132661A1 (ja) 2016-08-25
CN107210223A (zh) 2017-09-26

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