CN107210223B - 硅晶圆的制造方法 - Google Patents

硅晶圆的制造方法 Download PDF

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Publication number
CN107210223B
CN107210223B CN201680006293.1A CN201680006293A CN107210223B CN 107210223 B CN107210223 B CN 107210223B CN 201680006293 A CN201680006293 A CN 201680006293A CN 107210223 B CN107210223 B CN 107210223B
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Prior art keywords
silicon wafer
processed
temperature
heat treatment
wafer
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Chinese (zh)
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CN107210223A (zh
Inventor
铃木克佳
竹野博
江原幸治
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
CN201680006293.1A 2015-02-19 2016-01-07 硅晶圆的制造方法 Active CN107210223B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-030213 2015-02-19
JP2015030213A JP6044660B2 (ja) 2015-02-19 2015-02-19 シリコンウェーハの製造方法
PCT/JP2016/000050 WO2016132661A1 (ja) 2015-02-19 2016-01-07 シリコンウェーハの製造方法

Publications (2)

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CN107210223A CN107210223A (zh) 2017-09-26
CN107210223B true CN107210223B (zh) 2020-08-21

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CN201680006293.1A Active CN107210223B (zh) 2015-02-19 2016-01-07 硅晶圆的制造方法

Country Status (7)

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US (1) US10297463B2 (enExample)
JP (1) JP6044660B2 (enExample)
KR (1) KR102317547B1 (enExample)
CN (1) CN107210223B (enExample)
DE (1) DE112016000465B4 (enExample)
TW (1) TWI625789B (enExample)
WO (1) WO2016132661A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017058152A1 (en) * 2015-09-29 2017-04-06 Kimberly-Clark Worldwide, Inc. Materials that shrink in one dimension and expand in another dimension
JP6810591B2 (ja) * 2016-12-12 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス シリコン基板の熱処理方法
DE102016225138A1 (de) * 2016-12-15 2018-06-21 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium
JP6731161B2 (ja) * 2017-04-26 2020-07-29 信越半導体株式会社 シリコン単結晶の欠陥領域特定方法
CN109576795A (zh) * 2017-09-29 2019-04-05 胜高股份有限公司 硅外延晶片的制备方法
CN109576796A (zh) * 2017-09-29 2019-04-05 胜高股份有限公司 硅外延晶片的制备方法
JP7057122B2 (ja) * 2017-12-22 2022-04-19 グローバルウェーハズ・ジャパン株式会社 金属汚染評価方法
JP6897598B2 (ja) * 2018-02-16 2021-06-30 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
DE102018203945B4 (de) 2018-03-15 2023-08-10 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben
WO2020213230A1 (ja) * 2019-04-16 2020-10-22 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ
JP7207204B2 (ja) * 2019-07-02 2023-01-18 信越半導体株式会社 炭素ドープシリコン単結晶ウェーハの製造方法
CN110571172A (zh) * 2019-09-06 2019-12-13 大同新成新材料股份有限公司 一种硅晶圆制造方法及制造装置
EP4151782B1 (de) * 2021-09-16 2024-02-21 Siltronic AG Verfahren zur herstellung einer halbleiterscheibe aus einkristallinem silizium und halbleiterscheibe aus einkristallinem silizium

Citations (5)

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JP2008294256A (ja) * 2007-05-25 2008-12-04 Sumco Corp シリコン単結晶ウェーハの製造方法
US20090242843A1 (en) * 2006-06-20 2009-10-01 Shin-Etsu Handotai Co., Ltd Method for Manufacturing Silicon Wafer and Silicon Wafer Manufactured by this Method
CN101622381A (zh) * 2007-02-26 2010-01-06 信越半导体股份有限公司 单晶硅芯片的制造方法
CN102396055A (zh) * 2009-04-13 2012-03-28 信越半导体股份有限公司 退火晶片、退火晶片的制造方法以及器件的制造方法
CN103003927A (zh) * 2010-07-14 2013-03-27 信越半导体股份有限公司 硅基板的制造方法及硅基板

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JPS503009B1 (enExample) 1968-12-19 1975-01-30
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
MY135749A (en) 1997-04-09 2008-06-30 Memc Electronic Materials Process for producing low defect density, ideal oxygen precipitating silicon
US5882989A (en) 1997-09-22 1999-03-16 Memc Electronic Materials, Inc. Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
KR100378184B1 (ko) 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
JP4720058B2 (ja) * 2000-11-28 2011-07-13 株式会社Sumco シリコンウェーハの製造方法
JP2003297839A (ja) * 2002-04-03 2003-10-17 Sumitomo Mitsubishi Silicon Corp シリコンウエーハの熱処理方法
JP4699675B2 (ja) * 2002-10-08 2011-06-15 信越半導体株式会社 アニールウェーハの製造方法
US20080292523A1 (en) * 2007-05-23 2008-11-27 Sumco Corporation Silicon single crystal wafer and the production method
JP5613994B2 (ja) * 2009-04-14 2014-10-29 株式会社Sumco シリコンウェーハおよびその製造方法
WO2010109873A1 (ja) * 2009-03-25 2010-09-30 株式会社Sumco シリコンウェーハおよびその製造方法
JP5572569B2 (ja) 2011-02-24 2014-08-13 信越半導体株式会社 シリコン基板の製造方法及びシリコン基板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090242843A1 (en) * 2006-06-20 2009-10-01 Shin-Etsu Handotai Co., Ltd Method for Manufacturing Silicon Wafer and Silicon Wafer Manufactured by this Method
CN101622381A (zh) * 2007-02-26 2010-01-06 信越半导体股份有限公司 单晶硅芯片的制造方法
JP2008294256A (ja) * 2007-05-25 2008-12-04 Sumco Corp シリコン単結晶ウェーハの製造方法
CN102396055A (zh) * 2009-04-13 2012-03-28 信越半导体股份有限公司 退火晶片、退火晶片的制造方法以及器件的制造方法
CN103003927A (zh) * 2010-07-14 2013-03-27 信越半导体股份有限公司 硅基板的制造方法及硅基板

Also Published As

Publication number Publication date
KR102317547B1 (ko) 2021-10-27
JP6044660B2 (ja) 2016-12-14
CN107210223A (zh) 2017-09-26
WO2016132661A1 (ja) 2016-08-25
TW201639036A (zh) 2016-11-01
US20180247830A1 (en) 2018-08-30
DE112016000465B4 (de) 2022-01-27
TWI625789B (zh) 2018-06-01
JP2016152370A (ja) 2016-08-22
DE112016000465T5 (de) 2017-09-28
US10297463B2 (en) 2019-05-21
KR20170117418A (ko) 2017-10-23

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