JP6044660B2 - シリコンウェーハの製造方法 - Google Patents

シリコンウェーハの製造方法 Download PDF

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Publication number
JP6044660B2
JP6044660B2 JP2015030213A JP2015030213A JP6044660B2 JP 6044660 B2 JP6044660 B2 JP 6044660B2 JP 2015030213 A JP2015030213 A JP 2015030213A JP 2015030213 A JP2015030213 A JP 2015030213A JP 6044660 B2 JP6044660 B2 JP 6044660B2
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Prior art keywords
silicon wafer
silicon
temperature
wafer
processed
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JP2015030213A
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English (en)
Japanese (ja)
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JP2016152370A (ja
JP2016152370A5 (enExample
Inventor
鈴木　克佳
克佳 鈴木
竹野　博
博 竹野
江原　幸治
幸治 江原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to JP2015030213A priority Critical patent/JP6044660B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to CN201680006293.1A priority patent/CN107210223B/zh
Priority to PCT/JP2016/000050 priority patent/WO2016132661A1/ja
Priority to KR1020177022568A priority patent/KR102317547B1/ko
Priority to DE112016000465.6T priority patent/DE112016000465B4/de
Priority to US15/544,359 priority patent/US10297463B2/en
Priority to TW105100715A priority patent/TWI625789B/zh
Publication of JP2016152370A publication Critical patent/JP2016152370A/ja
Publication of JP2016152370A5 publication Critical patent/JP2016152370A5/ja
Application granted granted Critical
Publication of JP6044660B2 publication Critical patent/JP6044660B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015030213A 2015-02-19 2015-02-19 シリコンウェーハの製造方法 Active JP6044660B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015030213A JP6044660B2 (ja) 2015-02-19 2015-02-19 シリコンウェーハの製造方法
PCT/JP2016/000050 WO2016132661A1 (ja) 2015-02-19 2016-01-07 シリコンウェーハの製造方法
KR1020177022568A KR102317547B1 (ko) 2015-02-19 2016-01-07 실리콘 웨이퍼의 제조방법
DE112016000465.6T DE112016000465B4 (de) 2015-02-19 2016-01-07 Verfahren zur Fertigung von Silicium-Wafern
CN201680006293.1A CN107210223B (zh) 2015-02-19 2016-01-07 硅晶圆的制造方法
US15/544,359 US10297463B2 (en) 2015-02-19 2016-01-07 Method for manufacturing silicon wafer
TW105100715A TWI625789B (zh) 2015-02-19 2016-01-11 矽 Wafer manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015030213A JP6044660B2 (ja) 2015-02-19 2015-02-19 シリコンウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2016152370A JP2016152370A (ja) 2016-08-22
JP2016152370A5 JP2016152370A5 (enExample) 2016-10-13
JP6044660B2 true JP6044660B2 (ja) 2016-12-14

Family

ID=56689388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015030213A Active JP6044660B2 (ja) 2015-02-19 2015-02-19 シリコンウェーハの製造方法

Country Status (7)

Country Link
US (1) US10297463B2 (enExample)
JP (1) JP6044660B2 (enExample)
KR (1) KR102317547B1 (enExample)
CN (1) CN107210223B (enExample)
DE (1) DE112016000465B4 (enExample)
TW (1) TWI625789B (enExample)
WO (1) WO2016132661A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112018004894B1 (pt) * 2015-09-29 2021-03-16 Kimberly-Clark Worldwide, Inc substrato e método para sua fabricação
JP6810591B2 (ja) * 2016-12-12 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス シリコン基板の熱処理方法
DE102016225138A1 (de) * 2016-12-15 2018-06-21 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium
JP6731161B2 (ja) * 2017-04-26 2020-07-29 信越半導体株式会社 シリコン単結晶の欠陥領域特定方法
CN109576796A (zh) * 2017-09-29 2019-04-05 胜高股份有限公司 硅外延晶片的制备方法
CN109576795A (zh) * 2017-09-29 2019-04-05 胜高股份有限公司 硅外延晶片的制备方法
JP7057122B2 (ja) 2017-12-22 2022-04-19 グローバルウェーハズ・ジャパン株式会社 金属汚染評価方法
JP6897598B2 (ja) * 2018-02-16 2021-06-30 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
DE102018203945B4 (de) 2018-03-15 2023-08-10 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben
KR102741720B1 (ko) * 2019-04-16 2024-12-11 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼
JP7207204B2 (ja) * 2019-07-02 2023-01-18 信越半導体株式会社 炭素ドープシリコン単結晶ウェーハの製造方法
CN110571172A (zh) * 2019-09-06 2019-12-13 大同新成新材料股份有限公司 一种硅晶圆制造方法及制造装置
EP4151782B1 (de) * 2021-09-16 2024-02-21 Siltronic AG Verfahren zur herstellung einer halbleiterscheibe aus einkristallinem silizium und halbleiterscheibe aus einkristallinem silizium

Family Cites Families (17)

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JPS503009B1 (enExample) 1968-12-19 1975-01-30
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
DE69806369T2 (de) 1997-04-09 2003-07-10 Memc Electronic Materials, Inc. Silicium mit niedriger fehlerdichte und idealem sauerstoffniederschlag
US5882989A (en) 1997-09-22 1999-03-16 Memc Electronic Materials, Inc. Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
KR100378184B1 (ko) 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
JP4720058B2 (ja) * 2000-11-28 2011-07-13 株式会社Sumco シリコンウェーハの製造方法
JP2003297839A (ja) * 2002-04-03 2003-10-17 Sumitomo Mitsubishi Silicon Corp シリコンウエーハの熱処理方法
JP4699675B2 (ja) * 2002-10-08 2011-06-15 信越半導体株式会社 アニールウェーハの製造方法
JP5239155B2 (ja) * 2006-06-20 2013-07-17 信越半導体株式会社 シリコンウエーハの製造方法
JP5167654B2 (ja) 2007-02-26 2013-03-21 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
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JP5211550B2 (ja) * 2007-05-25 2013-06-12 株式会社Ｓｕｍｃｏ シリコン単結晶ウェーハの製造方法
EP2722423B1 (en) 2009-03-25 2017-01-11 Sumco Corporation Method of manufacturing a silicon wafer
JP5613994B2 (ja) * 2009-04-14 2014-10-29 株式会社Sumco シリコンウェーハおよびその製造方法
KR101657970B1 (ko) * 2009-04-13 2016-09-20 신에쯔 한도타이 가부시키가이샤 어닐 웨이퍼 및 어닐 웨이퍼의 제조방법, 그리고 디바이스의 제조방법
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Also Published As

Publication number Publication date
US10297463B2 (en) 2019-05-21
JP2016152370A (ja) 2016-08-22
WO2016132661A1 (ja) 2016-08-25
CN107210223B (zh) 2020-08-21
TWI625789B (zh) 2018-06-01
CN107210223A (zh) 2017-09-26
TW201639036A (zh) 2016-11-01
DE112016000465B4 (de) 2022-01-27
US20180247830A1 (en) 2018-08-30
DE112016000465T5 (de) 2017-09-28
KR102317547B1 (ko) 2021-10-27
KR20170117418A (ko) 2017-10-23

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