TWI622179B - Compound semiconductor solar battery unit and method for manufacturing compound semiconductor solar battery unit - Google Patents

Compound semiconductor solar battery unit and method for manufacturing compound semiconductor solar battery unit Download PDF

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Publication number
TWI622179B
TWI622179B TW104108534A TW104108534A TWI622179B TW I622179 B TWI622179 B TW I622179B TW 104108534 A TW104108534 A TW 104108534A TW 104108534 A TW104108534 A TW 104108534A TW I622179 B TWI622179 B TW I622179B
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TW
Taiwan
Prior art keywords
unit body
compound semiconductor
pinhole
main surface
electrode
Prior art date
Application number
TW104108534A
Other languages
English (en)
Chinese (zh)
Other versions
TW201547037A (zh
Inventor
Hidetoshi Washio
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW201547037A publication Critical patent/TW201547037A/zh
Application granted granted Critical
Publication of TWI622179B publication Critical patent/TWI622179B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
TW104108534A 2014-03-18 2015-03-17 Compound semiconductor solar battery unit and method for manufacturing compound semiconductor solar battery unit TWI622179B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014055134A JP6327896B2 (ja) 2014-03-18 2014-03-18 化合物半導体太陽電池セルおよび化合物半導体太陽電池セルの製造方法

Publications (2)

Publication Number Publication Date
TW201547037A TW201547037A (zh) 2015-12-16
TWI622179B true TWI622179B (zh) 2018-04-21

Family

ID=54144419

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104108534A TWI622179B (zh) 2014-03-18 2015-03-17 Compound semiconductor solar battery unit and method for manufacturing compound semiconductor solar battery unit

Country Status (3)

Country Link
JP (1) JP6327896B2 (ja)
TW (1) TWI622179B (ja)
WO (1) WO2015141443A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1224933A (zh) * 1997-12-03 1999-08-04 佳能株式会社 光电元件的制造方法
TW201135962A (en) * 2010-04-13 2011-10-16 Applied Materials Inc Multi-layer sin for functional and optical graded ARC layers on crystalline solar cells
EP2421052A2 (en) * 2009-04-17 2012-02-22 MCScience Inc. Solar cell ac electroluminescence image inspecting apparatus
US8355562B2 (en) * 2007-08-23 2013-01-15 Hitachi High-Technologies Corporation Pattern shape evaluation method
TW201405749A (zh) * 2012-04-18 2014-02-01 Lg Chemical Ltd 導電結構體及其製備方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63208280A (ja) * 1987-02-24 1988-08-29 Sharp Corp 化合物半導体基板
JPH04355972A (ja) * 1990-09-07 1992-12-09 Canon Inc 電気的に短絡している半導体デバイスの修繕方法、及び修繕装置、該修繕方法を利用した半導体デバイスの製造方法
JPH0621487A (ja) * 1992-06-29 1994-01-28 Canon Inc 光起電力素子の短絡除去方法
JPH06196732A (ja) * 1992-12-24 1994-07-15 Canon Inc 太陽電池
JPH06204525A (ja) * 1992-12-28 1994-07-22 Canon Inc 半導体デバイスの短絡修繕方法とその修繕装置、半導体デバイスの製造方法、並びに半導体デバイス
JPH06204520A (ja) * 1992-12-28 1994-07-22 Canon Inc 太陽電池の欠陥部分封止法
JPH07263735A (ja) * 1994-03-25 1995-10-13 Tokio Nakada 太陽電池およびその製造方法
JPH11233802A (ja) * 1997-12-03 1999-08-27 Canon Inc 光起電力素子の製造方法
JP2000188410A (ja) * 1998-12-24 2000-07-04 Canon Inc 光起電力素子の製造方法
JP4471584B2 (ja) * 2003-04-28 2010-06-02 シャープ株式会社 化合物太陽電池の製造方法
JP2005072459A (ja) * 2003-08-27 2005-03-17 Shinko Electric Ind Co Ltd 化合物半導体太陽電池の製造方法
CN101069072A (zh) * 2004-11-30 2007-11-07 国立大学法人奈良先端科学技术大学院大学 太阳能电池的评价方法和评价装置及其利用
JP5295369B2 (ja) * 2009-06-29 2013-09-18 京セラ株式会社 光電変換素子の製造方法
JP2012124262A (ja) * 2010-12-07 2012-06-28 Fuji Electric Co Ltd 太陽電池の製造方法
JP6078870B2 (ja) * 2012-06-28 2017-02-15 株式会社Ｓｃｒｅｅｎホールディングス 検査装置および検査方法
JP2014017366A (ja) * 2012-07-09 2014-01-30 Sharp Corp 薄膜化合物太陽電池セルおよびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1224933A (zh) * 1997-12-03 1999-08-04 佳能株式会社 光电元件的制造方法
US8355562B2 (en) * 2007-08-23 2013-01-15 Hitachi High-Technologies Corporation Pattern shape evaluation method
EP2421052A2 (en) * 2009-04-17 2012-02-22 MCScience Inc. Solar cell ac electroluminescence image inspecting apparatus
TW201135962A (en) * 2010-04-13 2011-10-16 Applied Materials Inc Multi-layer sin for functional and optical graded ARC layers on crystalline solar cells
TW201405749A (zh) * 2012-04-18 2014-02-01 Lg Chemical Ltd 導電結構體及其製備方法

Also Published As

Publication number Publication date
JP2015177177A (ja) 2015-10-05
JP6327896B2 (ja) 2018-05-23
TW201547037A (zh) 2015-12-16
WO2015141443A1 (ja) 2015-09-24

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