TWI612575B - 基板載置系統、基板處理裝置、靜電夾具及基板冷卻方法 - Google Patents

基板載置系統、基板處理裝置、靜電夾具及基板冷卻方法 Download PDF

Info

Publication number
TWI612575B
TWI612575B TW101141467A TW101141467A TWI612575B TW I612575 B TWI612575 B TW I612575B TW 101141467 A TW101141467 A TW 101141467A TW 101141467 A TW101141467 A TW 101141467A TW I612575 B TWI612575 B TW I612575B
Authority
TW
Taiwan
Prior art keywords
substrate
gas
heat transfer
transfer space
electrostatic
Prior art date
Application number
TW101141467A
Other languages
English (en)
Chinese (zh)
Other versions
TW201334062A (zh
Inventor
Atsuki Furuya
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201334062A publication Critical patent/TW201334062A/zh
Application granted granted Critical
Publication of TWI612575B publication Critical patent/TWI612575B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW101141467A 2011-11-09 2012-11-08 基板載置系統、基板處理裝置、靜電夾具及基板冷卻方法 TWI612575B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011245443A JP5993568B2 (ja) 2011-11-09 2011-11-09 基板載置システム、基板処理装置、静電チャック及び基板冷却方法

Publications (2)

Publication Number Publication Date
TW201334062A TW201334062A (zh) 2013-08-16
TWI612575B true TWI612575B (zh) 2018-01-21

Family

ID=48314875

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101141467A TWI612575B (zh) 2011-11-09 2012-11-08 基板載置系統、基板處理裝置、靜電夾具及基板冷卻方法

Country Status (4)

Country Link
JP (1) JP5993568B2 (ko)
KR (1) KR101432375B1 (ko)
CN (1) CN103107119B (ko)
TW (1) TWI612575B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465450B (zh) * 2013-09-22 2017-05-10 中微半导体设备(上海)有限公司 一种用于冷却静电吸盘的供气装置及供气方法
KR101594928B1 (ko) * 2014-03-06 2016-02-17 피에스케이 주식회사 기판 처리 장치 및 방법
JP6554387B2 (ja) * 2015-10-26 2019-07-31 東京エレクトロン株式会社 ロードロック装置における基板冷却方法、基板搬送方法、およびロードロック装置
CN108292619B (zh) * 2016-11-07 2023-02-24 应用材料公司 用于保持基板的载体、载体在处理系统中的使用、应用载体的处理系统、及用于控制基板的温度的方法
WO2018135420A1 (ja) * 2017-01-17 2018-07-26 富士フイルム株式会社 流体セル、三次元構造流体セルおよび三次元構造流体セルの製造方法
JP6615153B2 (ja) * 2017-06-16 2019-12-04 東京エレクトロン株式会社 基板処理装置、基板載置機構、および基板処理方法
JP7210896B2 (ja) * 2018-04-23 2023-01-24 東京エレクトロン株式会社 基板載置装置及び基板載置方法
CN109037100A (zh) * 2018-07-10 2018-12-18 武汉华星光电半导体显示技术有限公司 基板冷却装置
US11315759B2 (en) * 2019-02-08 2022-04-26 Hitachi High-Tech Corporation Plasma processing apparatus
KR102188261B1 (ko) * 2019-08-02 2020-12-09 세미기어, 인코포레이션 기판 냉각 장치 및 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04304941A (ja) * 1991-03-29 1992-10-28 Ngk Insulators Ltd ウエハー保持具の製造方法
JP2000114359A (ja) * 1999-09-13 2000-04-21 Hitachi Ltd 基板保持方法及び基板保持装置
US20030095370A1 (en) * 2000-01-20 2003-05-22 Ngk Insulators, Ltd. Electrostatic chucks
TW200524075A (en) * 2003-12-05 2005-07-16 Tokyo Electron Ltd Electrostatic sucker
TW200836291A (en) * 2006-10-04 2008-09-01 Applied Materials Inc Apparatus and method for substrate clamping in a plasma chamber

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
JPH09219442A (ja) * 1996-02-09 1997-08-19 Kobe Steel Ltd 静電チャックおよびその製造方法
GB2325939B (en) * 1997-01-02 2001-12-19 Cvc Products Inc Thermally conductive chuck for vacuum processor
JP3819538B2 (ja) * 1997-06-16 2006-09-13 芝浦メカトロニクス株式会社 静電チャック装置及び載置台
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP2001110883A (ja) * 1999-09-29 2001-04-20 Applied Materials Inc 基板支持装置及びその伝熱方法
JP4317329B2 (ja) * 2000-01-20 2009-08-19 日本碍子株式会社 静電チャック
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP4061131B2 (ja) * 2002-06-18 2008-03-12 キヤノンアネルバ株式会社 静電吸着装置
JP4367685B2 (ja) * 2002-11-18 2009-11-18 キヤノンアネルバ株式会社 静電チャック装置
JP2005019700A (ja) * 2003-06-26 2005-01-20 Sumitomo Osaka Cement Co Ltd 吸着固定装置の製造方法
CN100382275C (zh) * 2004-10-29 2008-04-16 东京毅力科创株式会社 基板载置台、基板处理装置及基板的温度控制方法
JP2006245563A (ja) 2006-02-06 2006-09-14 Hitachi Ltd 真空処理装置
JP2006253703A (ja) * 2006-04-07 2006-09-21 Toto Ltd 静電チャック及び絶縁性基板静電吸着処理方法
JP5138195B2 (ja) * 2006-09-26 2013-02-06 東京エレクトロン株式会社 伝熱ガス供給機構および伝熱ガス供給方法、ならびに基板処理装置および基板処理方法
JP5222442B2 (ja) * 2008-02-06 2013-06-26 東京エレクトロン株式会社 基板載置台、基板処理装置及び被処理基板の温度制御方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04304941A (ja) * 1991-03-29 1992-10-28 Ngk Insulators Ltd ウエハー保持具の製造方法
JP2000114359A (ja) * 1999-09-13 2000-04-21 Hitachi Ltd 基板保持方法及び基板保持装置
US20030095370A1 (en) * 2000-01-20 2003-05-22 Ngk Insulators, Ltd. Electrostatic chucks
TW200524075A (en) * 2003-12-05 2005-07-16 Tokyo Electron Ltd Electrostatic sucker
TW200836291A (en) * 2006-10-04 2008-09-01 Applied Materials Inc Apparatus and method for substrate clamping in a plasma chamber

Also Published As

Publication number Publication date
TW201334062A (zh) 2013-08-16
JP5993568B2 (ja) 2016-09-14
KR20130051419A (ko) 2013-05-20
KR101432375B1 (ko) 2014-08-20
CN103107119B (zh) 2016-08-03
JP2013102076A (ja) 2013-05-23
CN103107119A (zh) 2013-05-15

Similar Documents

Publication Publication Date Title
TWI612575B (zh) 基板載置系統、基板處理裝置、靜電夾具及基板冷卻方法
JP5202050B2 (ja) シャワーヘッド及び基板処理装置
JP6345030B2 (ja) プラズマ処理装置及びフォーカスリング
JP5029089B2 (ja) プラズマ処理装置用の載置台及びプラズマ処理装置
US8366828B2 (en) Shower head and substrate processing apparatus
KR101672856B1 (ko) 플라즈마 처리 장치
TWI517242B (zh) 頂部電極板及基板處理裝置
TWI475610B (zh) Electrode construction and substrate processing device
JP4615464B2 (ja) プラズマ処理装置用電極アッセンブリ及びプラズマ処理装置
KR101898079B1 (ko) 플라즈마 처리 장치
JP2000323456A (ja) プラズマ処理装置およびそれに用いられる電極
US11183371B2 (en) Plasma processing apparatus and plasma processing method
US10497545B2 (en) Plasma processing apparatus and cleaning method
WO2014013864A1 (ja) 上部電極、及びプラズマ処理装置
JP5602282B2 (ja) プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP2011119708A (ja) 基板保持装置、及び、プラズマ処理装置
JP5313375B2 (ja) プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP5235033B2 (ja) 電極アッセンブリ及びプラズマ処理装置
KR20170052492A (ko) 기판 탑재대 및 기판 처리 장치
JP2012114463A (ja) エッチング方法
JP4115155B2 (ja) プラズマ処理装置の真空処理室内部品の帯電抑制方法
JP2004006813A (ja) 静電吸着ホルダー及び基板処理装置
JP2001217304A (ja) 基板ステージ、それを用いた基板処理装置および基板処理方法
JP2013110440A (ja) 電極ユニット及び基板処理装置