CN103107119B - 基板冷却系统、基板处理装置、静电吸盘及基板冷却方法 - Google Patents

基板冷却系统、基板处理装置、静电吸盘及基板冷却方法 Download PDF

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Publication number
CN103107119B
CN103107119B CN201210445105.9A CN201210445105A CN103107119B CN 103107119 B CN103107119 B CN 103107119B CN 201210445105 A CN201210445105 A CN 201210445105A CN 103107119 B CN103107119 B CN 103107119B
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Prior art keywords
substrate
gas
heat conduction
mentioned
electrostatic chuck
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CN103107119A (zh
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古屋敦城
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN201210445105.9A 2011-11-09 2012-11-08 基板冷却系统、基板处理装置、静电吸盘及基板冷却方法 Active CN103107119B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011245443A JP5993568B2 (ja) 2011-11-09 2011-11-09 基板載置システム、基板処理装置、静電チャック及び基板冷却方法
JP2011-245443 2011-11-09

Publications (2)

Publication Number Publication Date
CN103107119A CN103107119A (zh) 2013-05-15
CN103107119B true CN103107119B (zh) 2016-08-03

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ID=48314875

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CN201210445105.9A Active CN103107119B (zh) 2011-11-09 2012-11-08 基板冷却系统、基板处理装置、静电吸盘及基板冷却方法

Country Status (4)

Country Link
JP (1) JP5993568B2 (ko)
KR (1) KR101432375B1 (ko)
CN (1) CN103107119B (ko)
TW (1) TWI612575B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465450B (zh) * 2013-09-22 2017-05-10 中微半导体设备(上海)有限公司 一种用于冷却静电吸盘的供气装置及供气方法
KR101594928B1 (ko) * 2014-03-06 2016-02-17 피에스케이 주식회사 기판 처리 장치 및 방법
JP6554387B2 (ja) * 2015-10-26 2019-07-31 東京エレクトロン株式会社 ロードロック装置における基板冷却方法、基板搬送方法、およびロードロック装置
CN108292619B (zh) * 2016-11-07 2023-02-24 应用材料公司 用于保持基板的载体、载体在处理系统中的使用、应用载体的处理系统、及用于控制基板的温度的方法
WO2018135420A1 (ja) * 2017-01-17 2018-07-26 富士フイルム株式会社 流体セル、三次元構造流体セルおよび三次元構造流体セルの製造方法
JP6615153B2 (ja) * 2017-06-16 2019-12-04 東京エレクトロン株式会社 基板処理装置、基板載置機構、および基板処理方法
JP7210896B2 (ja) * 2018-04-23 2023-01-24 東京エレクトロン株式会社 基板載置装置及び基板載置方法
CN109037100A (zh) * 2018-07-10 2018-12-18 武汉华星光电半导体显示技术有限公司 基板冷却装置
US11315759B2 (en) * 2019-02-08 2022-04-26 Hitachi High-Tech Corporation Plasma processing apparatus
KR102188261B1 (ko) * 2019-08-02 2020-12-09 세미기어, 인코포레이션 기판 냉각 장치 및 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1779939A (zh) * 2004-10-29 2006-05-31 东京毅力科创株式会社 基板载置台、基板处理装置及基板的温度控制方法
CN101504928A (zh) * 2008-02-06 2009-08-12 东京毅力科创株式会社 基板载置台、基板处理装置和被处理基板的温度控制方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0755423B2 (ja) * 1991-03-29 1995-06-14 日本碍子株式会社 ウエハー保持具の製造方法
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
JPH09219442A (ja) * 1996-02-09 1997-08-19 Kobe Steel Ltd 静電チャックおよびその製造方法
GB2325939B (en) * 1997-01-02 2001-12-19 Cvc Products Inc Thermally conductive chuck for vacuum processor
JP3819538B2 (ja) * 1997-06-16 2006-09-13 芝浦メカトロニクス株式会社 静電チャック装置及び載置台
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3264438B2 (ja) * 1999-09-13 2002-03-11 株式会社日立製作所 真空処理装置及び真空処理方法
JP2001110883A (ja) * 1999-09-29 2001-04-20 Applied Materials Inc 基板支持装置及びその伝熱方法
JP4317329B2 (ja) * 2000-01-20 2009-08-19 日本碍子株式会社 静電チャック
TW473792B (en) * 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP4061131B2 (ja) * 2002-06-18 2008-03-12 キヤノンアネルバ株式会社 静電吸着装置
JP4367685B2 (ja) * 2002-11-18 2009-11-18 キヤノンアネルバ株式会社 静電チャック装置
JP2005019700A (ja) * 2003-06-26 2005-01-20 Sumitomo Osaka Cement Co Ltd 吸着固定装置の製造方法
US7663860B2 (en) * 2003-12-05 2010-02-16 Tokyo Electron Limited Electrostatic chuck
JP2006245563A (ja) 2006-02-06 2006-09-14 Hitachi Ltd 真空処理装置
JP2006253703A (ja) * 2006-04-07 2006-09-21 Toto Ltd 静電チャック及び絶縁性基板静電吸着処理方法
JP5138195B2 (ja) * 2006-09-26 2013-02-06 東京エレクトロン株式会社 伝熱ガス供給機構および伝熱ガス供給方法、ならびに基板処理装置および基板処理方法
TWI424524B (zh) * 2006-10-04 2014-01-21 Applied Materials Inc 電漿腔室中用於基板夾持之設備與方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1779939A (zh) * 2004-10-29 2006-05-31 东京毅力科创株式会社 基板载置台、基板处理装置及基板的温度控制方法
CN101504928A (zh) * 2008-02-06 2009-08-12 东京毅力科创株式会社 基板载置台、基板处理装置和被处理基板的温度控制方法

Also Published As

Publication number Publication date
TW201334062A (zh) 2013-08-16
JP5993568B2 (ja) 2016-09-14
KR20130051419A (ko) 2013-05-20
KR101432375B1 (ko) 2014-08-20
JP2013102076A (ja) 2013-05-23
TWI612575B (zh) 2018-01-21
CN103107119A (zh) 2013-05-15

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