TWI605493B - 雷射回火方法以及雷射回火裝置 - Google Patents

雷射回火方法以及雷射回火裝置 Download PDF

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Publication number
TWI605493B
TWI605493B TW102140959A TW102140959A TWI605493B TW I605493 B TWI605493 B TW I605493B TW 102140959 A TW102140959 A TW 102140959A TW 102140959 A TW102140959 A TW 102140959A TW I605493 B TWI605493 B TW I605493B
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TW
Taiwan
Prior art keywords
laser
intensity
steep
pulsed laser
short
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TW102140959A
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English (en)
Chinese (zh)
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TW201423839A (zh
Inventor
次田純一
町田政志
鄭石煥
Original Assignee
日本製鋼所股份有限公司
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Application filed by 日本製鋼所股份有限公司 filed Critical 日本製鋼所股份有限公司
Publication of TW201423839A publication Critical patent/TW201423839A/zh
Application granted granted Critical
Publication of TWI605493B publication Critical patent/TWI605493B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
TW102140959A 2012-11-20 2013-11-12 雷射回火方法以及雷射回火裝置 TWI605493B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012254282A JP5907530B2 (ja) 2012-11-20 2012-11-20 レーザアニール方法およびレーザアニール装置

Publications (2)

Publication Number Publication Date
TW201423839A TW201423839A (zh) 2014-06-16
TWI605493B true TWI605493B (zh) 2017-11-11

Family

ID=50775914

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102140959A TWI605493B (zh) 2012-11-20 2013-11-12 雷射回火方法以及雷射回火裝置

Country Status (6)

Country Link
JP (1) JP5907530B2 (ko)
KR (1) KR102108028B1 (ko)
CN (1) CN104798180B (ko)
SG (1) SG11201503917UA (ko)
TW (1) TWI605493B (ko)
WO (1) WO2014080727A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6803189B2 (ja) 2016-10-06 2020-12-23 株式会社日本製鋼所 レーザ照射装置及び半導体装置の製造方法
CN112864040A (zh) * 2019-11-26 2021-05-28 上海微电子装备（集团）股份有限公司 激光退火装置
CN115903940A (zh) * 2023-01-06 2023-04-04 成都莱普科技股份有限公司 应用于激光退火系统的温度控制方法和激光退火系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2808220B2 (ja) 1992-10-31 1998-10-08 株式会社半導体エネルギー研究所 光照射装置
TW305063B (ko) * 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
JP3477888B2 (ja) * 1995-02-07 2003-12-10 ソニー株式会社 薄膜半導体装置の製造方法
JPH09321310A (ja) 1996-05-31 1997-12-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH1074697A (ja) * 1996-08-29 1998-03-17 Toshiba Corp 多結晶シリコン膜、多結晶シリコンの製造方法、薄膜トランジスタの製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JP2000058835A (ja) * 1998-07-31 2000-02-25 Semiconductor Energy Lab Co Ltd 薄膜トランジスタおよびその作製方法
JP4291539B2 (ja) * 2001-03-21 2009-07-08 シャープ株式会社 半導体装置およびその製造方法
JP4353352B2 (ja) * 2001-05-15 2009-10-28 シャープ株式会社 半導体装置及びその製造方法
JP4583004B2 (ja) * 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ アクティブ・マトリクス基板の製造方法
JP2009018335A (ja) * 2007-07-13 2009-01-29 Sharp Corp ビーム照射装置、ビーム照射方法および機能素子の製造方法
JP5046778B2 (ja) * 2007-07-31 2012-10-10 住友重機械工業株式会社 多結晶膜の製造方法及びレーザ加工装置

Also Published As

Publication number Publication date
SG11201503917UA (en) 2015-06-29
TW201423839A (zh) 2014-06-16
JP5907530B2 (ja) 2016-04-26
CN104798180A (zh) 2015-07-22
CN104798180B (zh) 2017-09-29
KR102108028B1 (ko) 2020-05-07
KR20150087195A (ko) 2015-07-29
WO2014080727A1 (ja) 2014-05-30
JP2014103247A (ja) 2014-06-05

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