TWI605493B - Laser annealing method and laser annealing device - Google Patents
Laser annealing method and laser annealing device Download PDFInfo
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02373—Group 14 semiconducting materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Description
本發明是有關於一種雷射回火方法以及雷射回火裝置，該雷射回火方法使線形光束形狀的脈衝雷射對非單晶半導體一邊掃描一邊進行多次的重疊照射，從而進行非晶質膜的結晶化或結晶膜改質。 The present invention relates to a laser tempering method and a laser tempering method for causing a pulse beam of a linear beam shape to perform multiple overlapping illuminations while scanning a non-single crystal semiconductor. Crystallization of the crystalline film or modification of the crystalline film.
一般來說，電視機(television，TV)或個人電腦(personal computer，PC)顯示器中使用的薄膜電晶體由非晶形(amorphous)矽(以後稱作a-矽)所構成，藉由以某些手段將矽結晶化(以後稱作p-矽)而加以利用，則能夠使其作為薄膜電晶體(Thin Film Transistor，TFT)的性能格外提昇。目前，作為低溫下的Si結晶化製程而準分子雷射回火技術已得到實用化，在用於智慧型電話等小型顯示器用途中被頻繁利用，進而正實現對大畫面顯示器等的實用化。 In general, a thin film transistor used in a television (television, TV) or personal computer (PC) display is composed of an amorphous (hereinafter referred to as a-矽), by some By utilizing ruthenium crystallization (hereinafter referred to as p-矽) and utilizing it, it is possible to particularly improve the performance as a thin film transistor (TFT). At present, the excimer laser tempering technology has been put into practical use as a Si crystallization process at a low temperature, and has been frequently used in small-sized display applications such as smart phones, and is being put into practical use for large-screen displays and the like.
該雷射回火法是如下方法，即，藉由將具有高脈衝能量的準分子雷射照射至非單晶半導體膜，而吸收了光能的半導體成為熔融或半熔融狀態，然後在冷卻凝固時結晶化。此時，為了對 寬廣區域進行處理，而使整形為線形光束形狀的脈衝雷射一邊相對地沿短軸方向掃描一邊照射。通常藉由使設置著非晶半導體膜的設置台移動來進行脈衝雷射的掃描。 The laser tempering method is a method in which a semiconductor having absorbed light energy is melted or semi-molten by irradiating a pseudo-molecular laser having a high pulse energy to a non-single-crystal semiconductor film, and then solidified in cooling. Crystallize at the time. At this time, in order to The wide area is processed, and the pulsed laser beam shaped into the shape of the linear beam is irradiated while being scanned in the short axis direction. The scanning of the pulsed laser is usually performed by moving the mounting table provided with the amorphous semiconductor film.
該雷射回火處理中，通過光學系統而將雷射的光束形狀整形為規定形狀，而且，使光束強度在光束剖面上均勻(平頂(top flat)：平坦部)，進而視需要將光束聚光而照射至被處理物。 In the laser tempering process, the shape of the laser beam is shaped into a predetermined shape by an optical system, and the beam intensity is uniform on the beam profile (top flat: flat portion), and then the beam is required as needed The light is collected and irradiated to the object to be processed.
作為光束形狀的一種，以光束剖面觀察具有短軸寬度與長軸寬度的線形光束形狀已為人所知，使其一邊沿短軸方向掃描一邊照射至被處理物，藉此可總括且高效地對被處理物的廣大面積進行處理。然而，即便為成為平頂的線形光束形狀，因經過各種光學構件等，在短軸方向以及長軸方向的緣部具有能量強度朝向外側而減少的部分(亦稱作陡(steepness)部)。 As a type of beam shape, it is known to observe a linear beam shape having a short axis width and a long axis width in a beam profile, and to illuminate the object to be processed while scanning in the short axis direction, thereby collectively and efficiently The large area of the object to be treated is treated. However, even in the shape of the linear beam which is a flat top, the edge portion in the short-axis direction and the long-axis direction has a portion (also referred to as a steep portion) whose energy intensity decreases toward the outside due to various optical members and the like.
專利文獻1中，因在聚光的雷射光的周邊部產生隨著高斯分佈而強度減弱的區域，故線的端部的末端變得不明確，以此為課題，在聚光至為100μm後，在離開被加工面的位置配設罩幕，根據該罩幕的圖案形狀，例如相對於100μm×30cm的範圍而形成20μm×30cm的極細的開槽圖案以使其周邊部的邊緣變得明確。 In Patent Document 1, since the region where the intensity is weakened by the Gaussian distribution occurs in the peripheral portion of the concentrated laser light, the end of the end portion of the line becomes unclear, and this is a problem, and after concentrating to 100 μm A mask is disposed at a position away from the surface to be processed, and an extremely fine groove pattern of 20 μm × 30 cm is formed in a range of, for example, 100 μm × 30 cm in accordance with the pattern shape of the mask to make the edge of the peripheral portion clear. .
而且，專利文獻2中，藉由使線形光束通過狹縫以規定線寬，而獲得具有大致銳利的邊緣的平坦的性質(段落0011)。 Moreover, in Patent Document 2, a flat property having a substantially sharp edge is obtained by passing a linear beam through a slit to define a line width (paragraph 0011).
[現有技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開平5-206558號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 5-206558
[專利文獻2]日本專利特開平9-321310號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 9-321310
然而，即便使用罩幕或狹縫、或各種光學系統亦難以使陡部完全為零。該陡部的減少亦可藉由光學構件的設計等來實現，但若藉由光學構件的設計等而過度地減少陡部，則如圖8所示，在脈衝雷射150的光束強度分佈中，會局部地形成強度向平坦部151的短軸方向端急遽增加的強度突部151a。而且，在使用了罩幕或狹縫的情況下，因繞射現象，而在穿透的雷射光束的光束強度分佈中，亦同樣地形成強度向平坦部151的短軸方向端急遽增加的強度突部151a。專利文獻1中，藉由紫外線光對透光性導電膜等的加工面進行直線描繪，上述突部不會成為特別的障礙。然而，在雷射回火中，在使用具有形成於平坦部端的突部的脈衝雷射的情況下，因超出最佳能量密度範圍等而會在回火處理中產生異常。 However, even with a mask or slit, or various optical systems, it is difficult to make the steep portion completely zero. The reduction of the steep portion can also be achieved by the design of the optical member, etc., but if the steep portion is excessively reduced by the design of the optical member or the like, as shown in FIG. 8, in the beam intensity distribution of the pulsed laser 150 An intensity protrusion 151a whose intensity increases sharply toward the end in the short axis direction of the flat portion 151 is locally formed. Further, in the case where a mask or a slit is used, in the beam intensity distribution of the penetrating laser beam due to the diffraction phenomenon, the intensity is increased sharply toward the short-axis direction of the flat portion 151. Strength protrusion 151a. In Patent Document 1, the processed surface of the translucent conductive film or the like is drawn in a straight line by ultraviolet light, and the protrusion does not become a particular obstacle. However, in the case of laser tempering, in the case of using a pulsed laser having a projection formed at the end of the flat portion, an abnormality is generated in the tempering treatment due to exceeding the optimum energy density range or the like.
因此，在現有的雷射回火中，不使用罩幕或狹縫，而將陡部的短軸方向寬度設為認為進行雷射照射時比較不會成為障礙的70μm~100μm左右，藉此避免強度突部的出現，且光學構件的設計變得容易。 Therefore, in the conventional laser tempering, the width of the short-axis direction of the steep portion is set to be about 70 μm to 100 μm which is considered to be an obstacle when laser irradiation is not used, without using a mask or a slit, thereby avoiding The appearance of the strength protrusions and the design of the optical member become easy.
然而，根據本發明者等人的深刻觀察，即便在現狀下，在藉由脈衝雷射的照射而結晶化的半導體中仍會看到照射不均，因此可知在形成元件(device)時會對性能造成影響。 However, according to the intensive observation by the inventors of the present invention, even in the current situation, uneven illumination is observed in a semiconductor crystallized by irradiation of a pulsed laser, and thus it is understood that when a device is formed, Performance has an impact.
根據本申請案發明者等人的研究，認為上述照射不均是線形光束的掃描方向端部的多晶矽膜的凸起在每次照射(shot)時形成 得不均勻所引起。該部分相當於經雷射照射的半導體膜的熔融部與未被照射具有足以熔融半導體膜的強度的雷射而保持為固體的部分的交界處。認為該凸起與照射能量的強度成比例地增大。亦即，隨著照射能量變大而在半導體膜的膜厚方向上的熔融得以推進，且膜整體熔融後成為液體的半導體膜層的溫度亦增大。認為在該液相部分伴隨溫度降低而結晶化時，其液體被溫度優先地開始降低的固液界面亦即線形光束短軸邊緣部吸引且固化，因而產生凸起。只要該凸起以規定的間隔且同等的高度形成，則照射不均不會很顯眼。 According to the study by the inventors of the present application, it is considered that the unevenness of the above-mentioned irradiation is that the projection of the polycrystalline ruthenium film at the end of the scanning direction of the linear beam is formed at each shot. Caused by unevenness. This portion corresponds to the junction of the molten portion of the laser-irradiated semiconductor film and the portion that is not irradiated with a laser having a strength sufficient to melt the semiconductor film and remains solid. It is considered that the protrusion increases in proportion to the intensity of the irradiation energy. In other words, as the irradiation energy increases, the melting in the film thickness direction of the semiconductor film proceeds, and the temperature of the semiconductor film layer which becomes a liquid after the film is entirely melted also increases. It is considered that when the liquid phase portion is crystallized with a decrease in temperature, the liquid is attracted and solidified by the solid-liquid interface in which the temperature preferentially starts to decrease, that is, the edge portion of the short-axis of the linear beam, and thus a projection is generated. As long as the projections are formed at a predetermined interval and at an equal height, the uneven illumination is not conspicuous.
然而，若產生雷射的輸出能量的變動，則如圖9所示，陡部的斜度亦發生變動，對半導體膜的回火有影響的區域(例如熔融閥值以上的區域)的短軸寬度發生變化。在圖9所示的光束強度分佈中，在光束強度變動了+10%的情況下，在具有100μm的陡部的光束強度分佈中，熔融閥值區域的短軸寬度在兩端分別增大3%。藉此，因非單晶半導體中的熔融範圍發生變動，故產生上述凸起部的高度或間隔的紊亂而出現照射不均。 However, when the fluctuation of the output energy of the laser is generated, as shown in FIG. 9, the slope of the steep portion also fluctuates, and the short axis of the region that affects the tempering of the semiconductor film (for example, a region having a melting threshold or more) The width changes. In the beam intensity distribution shown in FIG. 9, in the case where the beam intensity is changed by +10%, in the beam intensity distribution having a steep portion of 100 μm, the short-axis width of the melting threshold region is increased at both ends by 3 %. As a result, the melting range in the non-single crystal semiconductor fluctuates, so that the height or the interval of the convex portion is disturbed, and unevenness in irradiation occurs.
本發明以上述情況為背景而完成，其目的在於提供一種能夠減輕由雷射的輸出能量的變動所造成的影響的雷射回火方法以及雷射回火裝置。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a laser tempering method and a laser tempering apparatus capable of reducing the influence of variations in output energy of a laser.
亦即，本發明的雷射回火方法中的第1本發明是在非單晶半導體膜上，使光束剖面形狀設為線形光束的脈衝雷射一邊沿 上述線形光束的短軸方向掃描一邊照射，上述雷射回火方法的特徵在於：上述線形光束在光束強度分佈中，具有位於短軸方向端部的陡部，上述陡部為具有上述光束強度分佈中的最大強度的10%以上且90%以下的強度的區域，以上述陡部中的位於掃描方向後方側的上述陡部的短軸方向寬度在上述非單晶半導體膜的照射面上為50μm以下的方式進行上述照射。 That is, the first invention of the laser tempering method of the present invention is such that the beam cross-sectional shape is set to the pulse laser side of the linear beam on the non-single-crystal semiconductor film. The linear ray tempering method is characterized in that the linear ray tempering method has a steep portion located at an end portion in the short-axis direction in the beam intensity distribution, and the steep portion has the beam intensity distribution. In the region of the intensity of 10% or more and 90% or less of the maximum intensity, the width in the short-axis direction of the steep portion on the rear side in the scanning direction of the steep portion is 50 μm on the irradiation surface of the non-single-crystal semiconductor film. The above irradiation was carried out in the following manner.
第2本發明的雷射回火方法的特徵在於：在上述第1本發明中，上述脈衝雷射的波長為400nm以下。 According to a second aspect of the invention, in the laser tempering method of the first aspect of the invention, the pulse laser has a wavelength of 400 nm or less.
第3本發明的雷射回火方法的特徵在於：在上述第1本發明或第2本發明中，上述脈衝雷射的照射面上的脈衝半寬值為200ns以下。 In the laser tempering method according to the third aspect of the invention, the pulse half width value of the pulsed laser irradiation surface is 200 ns or less.
第4本發明的雷射回火方法的特徵在於：在上述第1本發明至第3本發明中的任一者中，上述脈衝雷射在照射面上，上述光束強度分佈中的最大強度的值為250mJ/cm2~500mJ/cm2。 According to a fourth aspect of the invention, in the laser tempering method, the pulsed laser beam on the irradiation surface, the maximum intensity of the beam intensity distribution The value is from 250 mJ/cm 2 to 500 mJ/cm 2 .
第5本發明的雷射回火方法的特徵在於：在上述第1本發明至第4本發明中的任一者中，上述非單晶半導體為矽。 In the laser tempering method according to the fifth aspect of the invention, the non-single-crystal semiconductor is a crucible.
第6本發明的雷射回火方法的特徵在於：在上述第1本發明至第5本發明中的任一者中，上述脈衝雷射在光束強度分佈中，在短軸方向上具有平坦部，以上述平坦部的強度的平均值而提供上述最大強度。 According to a sixth aspect of the present invention, in the laser tempering method, the pulsed laser has a flat portion in a short-axis direction in a beam intensity distribution. The above maximum strength is provided by the average of the strengths of the flat portions described above.
第7本發明的雷射回火方法的特徵在於：在上述第1本發明至第6本發明中的任一者中，上述脈衝雷射在光束強度分佈中，在兩端部中的任一者或兩者局部地具有強度上升的強度突部的情況下，在除上述強度突部外的範圍內提供上述最大強度。 According to a seventh aspect of the present invention, in the laser tempering method, the pulse laser is in any one of the both ends of the beam intensity distribution. In the case where the two or both of them have strength projections having an increased strength locally, the maximum intensity is provided in a range other than the above-described strength projections.
第8本發明的雷射回火方法的特徵在於：在上述第6本發明或第7本發明中，上述線形光束在上述非單晶半導體膜的照射面上，上述最大強度的96%以上的區域的短軸方向寬度為100μm~500μm。 According to a sixth aspect of the invention, in the sixth aspect of the invention, the linear light beam is 96% or more of the maximum intensity on the irradiation surface of the non-single-crystal semiconductor film. The short-axis direction width of the region is 100 μm to 500 μm.
第9本發明的雷射回火裝置的特徵在於包括：雷射光源，輸出脈衝雷射；衰減器，對上述脈衝雷射的穿透率進行調整；以及光學系統，對上述脈衝雷射的光束剖面形狀進行整形並且將經整形的脈衝雷射導引至非單晶半導體膜的照射面上，上述光學系統包括光學構件，其將上述脈衝雷射的光束剖面形狀整形為在光束強度分佈中具有規定的強度以上的高強度區域的線形光束；以及使位於上述線形光束的短軸方向端部的陡部中的至少掃描方向後方側的短軸方向寬度以在上述非單晶半導體膜的照射面上為50μm以下的方式變得陡峭。 A laser tempering apparatus according to a ninth aspect of the present invention includes: a laser light source that outputs a pulsed laser; an attenuator that adjusts a transmittance of the pulsed laser; and an optical system that beams the pulsed laser beam The profile shape is shaped and the shaped pulsed laser is directed onto the illumination surface of the non-single crystal semiconductor film, the optical system comprising an optical member that shapes the beam profile of the pulsed laser to have a beam intensity distribution a linear beam having a high intensity region having a predetermined intensity or higher; and a width in a short axis direction at least in the scanning direction rear side of the steep portion at the end portion of the linear beam in the short axis direction on the irradiation surface of the non-single crystal semiconductor film The way of being 50 μm or less becomes steep.
第10本發明的雷射回火裝置的特徵在於：在上述第9本發明中，使上述陡部變得陡峭的光學構件為遮蔽部，上述遮蔽部配置於上述脈衝雷射的光路上且遮蔽上述脈衝雷射的光束剖面的一部分。 According to a ninth aspect of the invention, in the ninth aspect of the invention, the optical member that makes the steep portion steep is a shielding portion, and the shielding portion is disposed on the optical path of the pulse laser and shields A portion of the beam profile of the pulsed laser described above.
第11本發明的雷射回火裝置的特徵在於：在上述第10本發明中，上述遮蔽部在比上述高強度區域的短軸方向端靠外側處遮蔽上述脈衝雷射的光束剖面的一部分。 According to a tenth aspect of the invention, in the eleventh aspect of the invention, the shielding portion shields a part of a beam profile of the pulsed laser beam outside an end of the high-intensity region in a short-axis direction.
第12本發明的雷射回火裝置的特徵在於：在上述第9本發明至第11本發明中的任一者中，上述雷射光源輸出波長為400nm以下的上述脈衝雷射。 According to a ninth aspect of the invention, the laser light source of the present invention, wherein the laser light source outputs the pulsed laser having a wavelength of 400 nm or less.
第13本發明的雷射回火裝置的特徵在於：在上述第9本發明至第12本發明中的任一者中，上述雷射光源輸出半寬值為200ns以下的上述脈衝雷射。 According to a thirteenth aspect of the present invention, in the laser illuminating device, the laser light source outputs the pulse laser having a half width value of 200 ns or less.
第14本發明的雷射回火裝置的特徵在於：在上述第9本發明至第13本發明中的任一者中，上述光學系統包括光學構件，上述光學構件將上述脈衝雷射強度調整為具有強度為最大強度的96%以上的上述高強度區域及位於端部的陡部的光束強度分佈。 A laser igniter according to any one of the ninth to thirteenth invention, wherein the optical system includes an optical member, wherein the optical member adjusts the pulsed laser intensity to The beam intensity distribution of the above-described high-intensity region having a maximum intensity of 96% or more and a steep portion at the end portion.
第15本發明的雷射回火裝置的特徵在於：在上述第9本發明至第14本發明中的任一者中，上述衰減器將非單晶半導體膜的照射面上的上述脈衝雷射的光束強度分佈中的最大強度調整為250mJ/cm2~500mJ/cm2。 According to a ninth aspect of the present invention, in the ninth aspect of the invention, the attenuator, the pulsed laser on the irradiation surface of the non-single crystal semiconductor film The maximum intensity in the beam intensity distribution is adjusted to be 250 mJ/cm 2 to 500 mJ/cm 2 .
亦即，根據本發明，藉由使陡部變得陡峭，而可減輕因脈衝雷射的輸出變動所致的照射不均。例如，在規定次數的重疊照射中，具有設為適當的照射能量密度，但該能量密度具有一定程度的容許範圍。然而，若陡部的寬度如現有般大(例如70μm 以上)，則即便為適當的照射能量密度範圍內的變動，亦出現照射不均。 That is, according to the present invention, by making the steep portion steep, it is possible to reduce unevenness in illumination due to fluctuations in the output of the pulsed laser. For example, in a predetermined number of times of overlapping irradiation, an appropriate irradiation energy density is set, but the energy density has a certain allowable range. However, if the width of the steep portion is as large as before (for example, 70 μm) In the above), even if the fluctuation is within an appropriate range of the irradiation energy density, uneven irradiation occurs.
另外，陡部是指能量強度朝向外側而減少的部分，且是指具有短軸方向的光束強度分佈中的最大強度的10%以上且90%以下的強度的區域。 In addition, the steep portion refers to a portion where the energy intensity decreases toward the outside, and refers to a region having an intensity of 10% or more and 90% or less of the maximum intensity in the beam intensity distribution in the short-axis direction.
減小了陡部的寬度的(50μm以下)的本申請案發明中，能量變動所致的影響大幅減小，結果，可減少照射不均。 In the invention of the present application in which the width of the steep portion is reduced (50 μm or less), the influence due to the energy fluctuation is greatly reduced, and as a result, unevenness in irradiation can be reduced.
另外，基於相同的理由，陡部的寬度理想的是進一步設為45μm以下。 Further, for the same reason, the width of the steep portion is desirably further set to 45 μm or less.
本發明的回火處理以非單晶半導體為對象，將非晶質的半導體結晶化，或將結晶質的半導體改質。改質中包括將多結晶的半導體的單晶化，或謀求結晶性的改善。作為非單晶半導體，代表而言可列舉矽，但本發明並不限定於此。 The tempering treatment of the present invention targets a non-single crystal semiconductor, crystallizes an amorphous semiconductor, or reforms a crystalline semiconductor. The modification includes single-crystalization of a polycrystalline semiconductor or improvement in crystallinity. As a non-single crystal semiconductor, 矽 is exemplified, but the present invention is not limited thereto.
脈衝雷射在本發明中並不限定為特定的脈衝雷射，例如例示波長400nm以下、半寬值200ns以下的脈衝雷射。而且脈衝雷射的種類亦不作特別限定，例如可列舉準分子雷射。 The pulsed laser is not limited to a specific pulsed laser in the present invention, and for example, a pulsed laser having a wavelength of 400 nm or less and a half-width of 200 ns or less is exemplified. Further, the type of the pulse laser is not particularly limited, and examples thereof include excimer lasers.
脈衝雷射使用柱狀透鏡等各種光學構件而整形為線形光束。線形光束的形狀不限定為特定的形狀，只要為長軸相對於短軸具有大的比率的形狀即可。例如，可列舉該比率為10以上的形狀。長軸側的長度、短軸側的長度在本發明中不限定為特定的長度，例如，可列舉長軸側的長度為370mm~1300mm、短軸側的長度為100μm~500μm。而且，脈衝雷射藉由均束器 (homogenizer)、柱狀透鏡等光學構件，而可設為如下分佈，即，在光束強度分佈中，以例如具有最大強度的96%以上的強度的高強度區域(較佳為以平坦部為主)為主，且具有位於端部的最大強度的10%~90%的陡部。高強度區域與陡部之間成為強度變化的過渡部分，其範圍小。 The pulsed laser is shaped into a linear beam using various optical members such as a lenticular lens. The shape of the linear beam is not limited to a specific shape as long as it has a shape in which the major axis has a large ratio with respect to the minor axis. For example, a shape in which the ratio is 10 or more can be cited. The length on the long axis side and the length on the short axis side are not limited to a specific length in the present invention. For example, the length on the long axis side is 370 mm to 1300 mm, and the length on the short axis side is 100 μm to 500 μm. Moreover, pulsed lasers are used by a homogenizer An optical member such as a homogenizer or a lenticular lens may be a distribution in which, for example, a high-intensity region having a maximum intensity of 96% or more (preferably a flat portion) is mainly included in the beam intensity distribution. Mainly, and has a steep portion of 10% to 90% of the maximum strength at the end. The high-strength region and the steep portion become transition portions of the intensity change, and the range thereof is small.
另外，高強度區域除上述平坦部外，還可列舉短軸方向上強度具有傾斜傾向的部分或強度為曲線狀分佈的部分等，其間具有最大強度。 Further, the high-strength region includes, in addition to the flat portion, a portion having a tendency to incline in the direction of the short-axis direction or a portion having a curved portion in the intensity of the curve, and the maximum strength therebetween.
陡部的陡峭化(在掃描方向後方側寬度為50μm以下)例如可使用能夠遮蔽光束的端部的遮蔽部來進行。遮蔽可藉由遮斷光束穿透者或減小穿透率來進行。遮蔽部藉由配置於離非單晶半導體膜近的位置而可減小陡部的寬度，該情況下，可使用耐熱性更高的材料。而且，藉由將遮蔽部沿著光路配置成多層，而可減小對遮蔽部的損傷，且可減小陡部的短軸方向寬度。 The steepness of the steep portion (the width on the rear side in the scanning direction is 50 μm or less) can be performed, for example, by using a shielding portion that can shield the end portion of the light beam. Masking can be done by blocking the beam penetration or reducing the penetration. The shielding portion can be reduced in width by being disposed at a position close to the non-single-crystal semiconductor film. In this case, a material having higher heat resistance can be used. Further, by arranging the shielding portions in a plurality of layers along the optical path, damage to the shielding portion can be reduced, and the width in the short-axis direction of the steep portion can be reduced.
理想的是該遮蔽部在比上述高強度區域的短軸方向端靠外側處遮蔽上述脈衝雷射的光束剖面的一部分。在已遮蔽脈衝雷射光束的一部分的情況下，藉由繞射現象而在穿透部分的端部強度變高，從而形成強度突部，該情況為如上所述。若利用該現象以於高強度區域的外側強度開始降低的部分進行遮蔽，則不會產生強度突部，或強度突部可變得極小。但是，若於過於靠外側進行遮蔽，則成為在高強度區域的外側強度暫時降低，且在其外側強度上升的強度分佈，因而理想的是於適當強度的位置進行遮蔽。例 如，理想的是於相對於最大強度而為70%~90%的強度範圍的位置進行遮蔽。 Preferably, the shielding portion shields a portion of the beam profile of the pulsed laser at an outer side of the short-axis end of the high-intensity region. In the case where a part of the pulsed laser beam has been shielded, the intensity of the end portion of the penetrating portion becomes high by the diffraction phenomenon, thereby forming an intensity protrusion, which is as described above. When this phenomenon is used to shield the portion where the outer strength of the high-strength region starts to decrease, the strength protrusion is not generated, or the strength protrusion can be extremely small. However, if the shielding is performed too far on the outer side, the strength of the outer side of the high-strength region is temporarily lowered, and the intensity distribution on the outer side is increased. Therefore, it is preferable to shield at a position of an appropriate strength. example For example, it is desirable to mask at a position ranging from 70% to 90% of the intensity with respect to the maximum intensity.
而且，陡部的陡峭化(寬度50μm以下)例如可藉由光學構件的調整等來進行。例如，可藉由如下來實現，即，由柱狀透鏡進行矽膜位置相對於成像位置的調整或使用成像性能更佳的透鏡組來作為柱狀透鏡等。 Further, the steepness of the steep portion (having a width of 50 μm or less) can be performed, for example, by adjustment of an optical member or the like. For example, it can be realized as a lenticular lens or the like by adjusting a bismuth film position with respect to an imaging position or using a lens group having better imaging performance by a lenticular lens.
脈衝雷射根據重疊次數而不同，例如可列舉以250mJ/cm2~500mJ/cm2的能量密度照射至非單晶半導體的脈衝雷射。關於重疊次數，可例示8次~50次，此時的掃描速度，可列舉1mm/秒~100mm/秒。 The pulsed laser differs depending on the number of times of overlap, and examples thereof include a pulsed laser that is irradiated to a non-single-crystal semiconductor at an energy density of 250 mJ/cm 2 to 500 mJ/cm 2 . The number of times of overlap can be exemplified 8 times to 50 times, and the scanning speed at this time is 1 mm/sec to 100 mm/sec.
亦即，根據本發明，使陡部陡峭化，而可減輕能量輸出變動時的影響並減小照射不均，結果，可提供高品質的半導體元件。 That is, according to the present invention, the steep portion is steepened, the influence on the fluctuation of the energy output can be reduced, and the unevenness of the irradiation can be reduced, and as a result, a high-quality semiconductor element can be provided.
1、1a‧‧‧雷射回火裝置 1, 1a‧‧‧ laser tempering device
2‧‧‧處理室 2‧‧‧Processing room
3‧‧‧掃描裝置 3‧‧‧Scanning device
4‧‧‧基台 4‧‧‧Abutment
5‧‧‧基板配置台 5‧‧‧Substrate configuration table
6‧‧‧導入窗 6‧‧‧Introduction window
10‧‧‧脈衝振盪雷射光源 10‧‧‧Pulsed oscillating laser source
11‧‧‧衰減器 11‧‧‧Attenuator
12‧‧‧光學系統 12‧‧‧Optical system
12a‧‧‧均束器 12a‧‧ ‧ buncher
12b‧‧‧反射鏡 12b‧‧‧Mirror
12c‧‧‧柱狀透鏡 12c‧‧‧ lenticular lens
15‧‧‧脈衝雷射 15‧‧‧pulse laser
20‧‧‧遮蔽部 20‧‧‧Shading Department
21‧‧‧第1遮蔽部 21‧‧‧1st shelter
22‧‧‧第2遮蔽部 22‧‧‧2nd shelter
100‧‧‧矽膜 100‧‧‧矽膜
150‧‧‧脈衝雷射 150‧‧‧pulse laser
151‧‧‧平坦部 151‧‧‧ Flat Department
151a‧‧‧強度突部 151a‧‧‧Strength protrusion
152、153‧‧‧陡部 152, 153‧‧ ‧ steep
圖1是表示本發明的一實施方式的雷射回火裝置的概略圖。 Fig. 1 is a schematic view showing a laser tempering apparatus according to an embodiment of the present invention.
圖2是表示本發明的一實施方式的遮蔽部的形狀的圖。 FIG. 2 is a view showing a shape of a shielding portion according to an embodiment of the present invention.
圖3是表示本發明的一實施方式的經過遮蔽部時的光束強度分佈的變化的圖。 3 is a view showing a change in a beam intensity distribution when passing through a shielding portion according to an embodiment of the present invention.
圖4是表示本發明的一實施方式的照射面上的光束強度分佈的圖。 4 is a view showing a beam intensity distribution on an irradiation surface according to an embodiment of the present invention.
圖5是表示本發明的一實施方式的雷射輸出變動時的照射面上的光束強度分佈的變化的圖。 FIG. 5 is a view showing a change in the intensity distribution of the light beam on the irradiation surface when the laser output is changed according to the embodiment of the present invention.
圖6是表示本發明的另一實施方式的雷射回火裝置的概略圖。 Fig. 6 is a schematic view showing a laser tempering apparatus according to another embodiment of the present invention.
圖7是表示本發明的實施例的照射不均評估結果的圖式代用照片。 Fig. 7 is a pictorial substitute photograph showing the results of the irradiation unevenness evaluation of the embodiment of the present invention.
圖8是表示現有的在平坦部端形成著突部的光束強度分佈的圖。 Fig. 8 is a view showing a conventional beam intensity distribution in which a projection is formed at a flat end.
圖9是表示現有的照射面上的光束強度分佈的圖。 Fig. 9 is a view showing a beam intensity distribution on a conventional irradiation surface.
以下，根據隨附圖式，對本發明的雷射回火裝置1進行說明。 Hereinafter, the laser tempering apparatus 1 of the present invention will be described with reference to the accompanying drawings.
雷射回火裝置1包括處理室2，在處理室2內具備可沿X-Y方向移動的掃描裝置3，且在該掃描裝置3的上部具備基台4。在基台4上設置基板配置台5作為平台。掃描裝置3藉由未圖示的馬達等驅動。而且，處理室2中設置著從外部導入脈衝雷射的導入窗6。 The laser tempering apparatus 1 includes a processing chamber 2, and a scanning device 3 that is movable in the X-Y direction in the processing chamber 2, and a base 4 is provided on an upper portion of the scanning device 3. A substrate table 5 is provided on the base 4 as a stage. The scanner device 3 is driven by a motor or the like (not shown). Further, the processing chamber 2 is provided with an introduction window 6 for introducing a pulsed laser from the outside.
在回火處理時，在該基板配置台5上設置著非晶質的矽膜100等作為非單晶半導體的半導體膜。矽膜100在未圖示的基板上，例如以40nm~100nm厚度(具體而言例如50nm厚度)而形成。該形成可藉由普通方法來進行，本發明中，半導體膜的形成方法不作特別限定。 At the time of the tempering treatment, an amorphous tantalum film 100 or the like is provided on the substrate placing table 5 as a semiconductor film of a non-single-crystal semiconductor. The ruthenium film 100 is formed on a substrate (not shown), for example, at a thickness of 40 nm to 100 nm (specifically, for example, a thickness of 50 nm). This formation can be carried out by an ordinary method. In the present invention, the method of forming the semiconductor film is not particularly limited.
另外，本實施方式中，對關於藉由雷射處理而將非晶質膜結 晶化的雷射處理進行說明，但本發明的雷射處理的內容並不限定於此，例如，亦可將非單晶的半導體膜單晶化，或進行結晶半導體膜的改質。 In addition, in the present embodiment, regarding the amorphous film junction by laser processing Although the laser processing of the crystallization is described, the content of the laser processing of the present invention is not limited thereto. For example, the non-single-crystal semiconductor film may be single-crystallized or the crystalline semiconductor film may be modified.
在處理室2的外部設置著脈衝振盪雷射光源10。該脈衝振盪雷射光源10由準分子雷射振盪器所構成，可輸出波長400nm以下、重複振盪頻率為1Hz~1200Hz的脈衝雷射，該脈衝振盪雷射光源10中，可藉由反饋控制以將脈衝雷射的輸出維持為規定範圍內的方式來進行控制。 A pulsed oscillating laser source 10 is disposed outside the processing chamber 2. The pulsed oscillating laser light source 10 is composed of a quasi-molecular laser oscillator, and can output a pulsed laser having a wavelength of 400 nm or less and a repetitive oscillation frequency of 1 Hz to 1200 Hz. The pulse oscillating laser light source 10 can be controlled by feedback. The control is performed by maintaining the output of the pulsed laser within a predetermined range.
由該脈衝振盪雷射光源10進行脈衝振盪並輸出的脈衝雷射15利用衰減器(attenuator)11調整能量密度，且利用由均束器12a、反射鏡12b、柱狀透鏡12c等光學構件所構成的光學系統12而向線形光束形狀進行整形或偏向，且向具有平坦部及陡部的光束強度分佈形狀進行強度分佈調整等，作為脈衝雷射150，通過設置在處理室2的導入窗6而照射至處理室2內的非晶質矽膜100。另外，構成光學系統12的光學構件不限定為上述，可包括各種透鏡(均束器、柱狀透鏡等)、鏡面、波導部等。 The pulse laser 15 pulse-oscillated and output by the pulse oscillation laser light source 10 adjusts the energy density by an attenuator 11, and is composed of optical members such as a homogenizer 12a, a mirror 12b, and a lenticular lens 12c. The optical system 12 shapes or deflects the linear beam shape, and adjusts the intensity distribution to the beam intensity distribution shape having the flat portion and the steep portion, and the pulse laser 150 is disposed in the introduction window 6 of the processing chamber 2 as the pulse laser 150. The amorphous ruthenium film 100 in the processing chamber 2 is irradiated. Further, the optical member constituting the optical system 12 is not limited to the above, and may include various lenses (a homogenizer, a lenticular lens, etc.), a mirror surface, a waveguide portion, and the like.
而且，處理室2內配置著遮蔽部20。遮蔽部20配置在可遮蔽脈衝雷射150的相對於相對的光束掃描方向而為短軸方向後端部的位置。另外，就遮蔽部而言，亦可將成對的2個遮蔽板設置彼此的間隙量來進行配置，且以遮蔽脈衝雷射的掃描方向兩端部的方式進行配置。 Further, a shielding portion 20 is disposed in the processing chamber 2. The shielding portion 20 is disposed at a position that can block the rear end portion of the pulse laser 150 in the short-axis direction with respect to the opposite beam scanning direction. Further, in the shielding portion, the pair of two shielding plates may be disposed with a gap amount therebetween, and may be disposed so as to shield both ends of the scanning direction of the pulse laser.
其次，對上述雷射回火裝置1的動作進行說明。 Next, the operation of the above-described laser tempering device 1 will be described.
脈衝振盪雷射光源10中進行脈衝振盪而輸出的脈衝雷射15，例如設為波長400nm以下、脈衝半寬值為200ns以下的雷射。然而，本發明並不限定於該些。 The pulse laser 15 that is pulse-oscillated and outputted in the pulsed laser light source 10 is, for example, a laser having a wavelength of 400 nm or less and a pulse half-width value of 200 ns or less. However, the invention is not limited to these.
脈衝雷射15利用衰減器11而調整脈衝能量密度。衰減器11設定為規定的衰減率，且以在對矽膜100的照射面上獲得規定的照射脈衝能量密度的方式來調整衰減率。例如在將非晶質的矽膜100結晶化等的情況下，能夠在其照射面上，調整為能量密度為150mJ/cm2~500mJ/cm2，理想的是調整為250mJ/cm2~500mJ/cm2。 The pulsed laser 15 uses the attenuator 11 to adjust the pulse energy density. The attenuator 11 is set to a predetermined attenuation rate, and the attenuation rate is adjusted so as to obtain a predetermined irradiation pulse energy density on the irradiation surface of the ruthenium film 100. For example, when the amorphous ruthenium film 100 is crystallized or the like, the energy density can be adjusted to 150 mJ/cm 2 to 500 mJ/cm 2 on the irradiation surface, and it is preferably adjusted to 250 mJ/cm 2 to 500 mJ. /cm 2 .
已穿透衰減器11的脈衝雷射15利用光學系統12而整形為線形光束形狀，進而經由光學系統12的柱狀透鏡12c而使短軸寬度聚光，並導入至設置於處理室2的導入窗6。 The pulsed laser 15 having penetrated the attenuator 11 is shaped into a linear beam shape by the optical system 12, and further condenses the short-axis width via the lenticular lens 12c of the optical system 12, and is introduced into the introduction provided in the processing chamber 2. Window 6.
脈衝雷射150如圖3所示包括：高強度區域，包含平坦部151且相對於最大能量強度為96%以上；以及陡部152，位於長軸方向的兩端部，具有比上述平坦部151小的能量強度，且朝向外側而能量強度逐漸降低。陡部為最大強度的10%~90%的範圍的區域。 The pulse laser 150 includes a high-intensity region including a flat portion 151 and having a maximum energy intensity of 96% or more as shown in FIG. 3, and a steep portion 152 at both end portions in the long-axis direction having a flat portion 151 Small energy intensity, and towards the outside, the energy intensity gradually decreases. The steep portion is an area ranging from 10% to 90% of the maximum strength.
脈衝雷射150穿透導入窗6而導入至處理室2內，進而前進並到達遮蔽部20。遮蔽部20以對於脈衝雷射150而遮蔽短軸方向兩端的陡部152的方式，配置於光束強度分佈中的最大強度的70%~90%的位置。藉此，能夠以如下方式進行控制，即，在穿透遮蔽部20時形成於高強度區域的端部的強度突部的大小減小或消失。 The pulsed laser 150 penetrates the introduction window 6 and is introduced into the processing chamber 2 to advance and reach the shielding portion 20. The shielding portion 20 is disposed at a position of 70% to 90% of the maximum intensity in the beam intensity distribution so as to shield the sharp portions 152 at both ends in the short-axis direction with respect to the pulse laser 150. Thereby, it is possible to control such that the size of the strength projection formed at the end portion of the high-strength region when the shielding portion 20 is penetrated is reduced or eliminated.
減小了陡部152的脈衝雷射150如圖3、圖4所示，藉由通過遮蔽部20，而利用繞射等在光束掃描方向上的短軸方向後端部形成陡部153。其中，經過了遮蔽部20的陡部153是將通過遮蔽部20前的陡部152進行遮蔽而形成，因而比起穿透遮蔽部20前的陡部152，擴展寬度變得相當小。另外，光束掃描方向上的短軸方向前端部的陡部152即便保持該狀態也不會成為障礙。另外，圖3、圖4中表示光束的相對的掃描方向(亦圖示於以後的圖5中)。 As shown in FIGS. 3 and 4, the pulsed laser 150 having the steep portion 152 reduced, by the shielding portion 20, forms a steep portion 153 at the rear end portion in the short-axis direction in the beam scanning direction by diffraction or the like. However, since the steep portion 153 that has passed through the shielding portion 20 is formed by shielding the steep portion 152 passing through the shielding portion 20, the expansion width is considerably smaller than the steep portion 152 before the shielding portion 20 is penetrated. Further, the steep portion 152 at the tip end portion in the short-axis direction in the beam scanning direction does not become an obstacle even if this state is maintained. 3 and 4 show the relative scanning directions of the light beams (also shown in FIG. 5 later).
而且，遮蔽部20因在強度比平坦部的強度低的位置遮蔽脈衝雷射150，故即便設置在比遮蔽平坦部的情況離矽膜100更近的位置，對遮蔽部的損傷亦少。藉由設置在離矽膜100近的位置而可進一步減少陡部153的擴展，且可將其短軸寬度在照射面上設為50μm以下。就該點而言，相對於在平坦部中進行遮蔽的現有的罩幕或狹縫，而具有特異性。 Further, since the shielding portion 20 shields the pulse laser 150 at a position where the intensity is lower than the strength of the flat portion, even if it is provided closer to the diaphragm 100 than the flat portion, the damage to the shielding portion is small. The expansion of the steep portion 153 can be further reduced by providing a position close to the ruthenium film 100, and the short axis width can be set to 50 μm or less on the irradiation surface. In this regard, it is specific with respect to an existing mask or slit that is shielded in the flat portion.
在已通過了遮蔽部20的脈衝雷射150中，如圖3、圖4所示，獲得擴展減小的陡部153，該陡部的寬度在照射面上降低為50μm以下，更理想的是降低為45μm以下。 In the pulsed laser 150 having passed through the shielding portion 20, as shown in Figs. 3 and 4, a steep portion 153 having a reduced expansion is obtained, and the width of the steep portion is reduced to 50 μm or less on the irradiation surface, and more desirably Reduced to 45 μm or less.
藉由利用掃描裝置3使矽膜100移動而可使脈衝雷射150一邊對矽膜100相對地掃描一邊照射至矽膜100。另外，本發明中上述掃描的速度並不限定為特定的速度。照射間距可設為5μm~65μm。 By moving the ruthenium film 100 by the scanning device 3, the pulsed laser 150 can be irradiated to the ruthenium film 100 while the ruthenium film 100 is relatively scanned. Further, the speed of the above scanning in the present invention is not limited to a specific speed. The irradiation pitch can be set to 5 μm to 65 μm.
脈衝雷射150中，如上述般陡部153的寬度減小至50μm以 下，即便在脈衝雷射15的輸出發生了變動的情況下，亦可將熔融閥值以上的區域的寬度大小的變動率抑制到很小。例如，如圖5所示，即便在輸出能量增加了10%的情況下陡部153的寬度為50μm以下時，亦可將熔融閥值以上的區域的寬度的變動抑制為0.95%以下。 In the pulsed laser 150, the width of the steep portion 153 is reduced to 50 μm as described above. In the case where the output of the pulse laser 15 fluctuates, the variation rate of the width of the region above the melting threshold can be kept small. For example, as shown in FIG. 5, even when the output energy is increased by 10%, the width of the steep portion 153 is 50 μm or less, and the variation in the width of the region equal to or higher than the melting threshold can be suppressed to 0.95% or less.
圖6表示另一實施方式的雷射回火裝置1a，將遮蔽部設置為多層(該例中設置為2層)。另外，對與上述實施方式相同的構成附上相同的符號並省略或簡化其說明。 Fig. 6 shows a laser tempering device 1a according to another embodiment, in which the shielding portion is provided in a plurality of layers (in this example, two layers are provided). The same components as those in the above-described embodiments are denoted by the same reference numerals, and their description is omitted or simplified.
在作為聚光透鏡的柱狀透鏡12c與導入窗6之間，配置著相當於第1個遮蔽部的第1遮蔽部21，在處理室2內配置著相當於第2個遮蔽部的第2遮蔽部22。如圖6所示，第1遮蔽部21配置在可遮蔽脈衝雷射150的光束掃描方向上的短軸方向後端部的位置。而且，第2遮蔽部22亦同樣地，配置在可遮蔽脈衝雷射150的光束掃描方向上的短軸方向後端部的位置。 The first shielding portion 21 corresponding to the first shielding portion is disposed between the lenticular lens 12c as the condensing lens and the introduction window 6, and the second shielding portion is disposed in the processing chamber 2 The shielding portion 22. As shown in FIG. 6, the first shielding portion 21 is disposed at a position in the short-axis direction rear end portion of the beam scanning direction in which the pulse laser 150 can be shielded. Further, similarly, the second shielding portion 22 is disposed at a position in the short-axis direction rear end portion of the beam scanning direction in which the pulse laser 150 can be shielded.
另外，第1遮蔽部21、第2遮蔽部22中，亦可將成對的2個遮蔽板設置彼此的間隙量來進行配置，且以遮蔽脈衝雷射的掃描方向兩端部的方式進行配置。 In addition, in the first shielding portion 21 and the second shielding portion 22, the pair of two shielding plates may be disposed with a gap amount therebetween, and may be disposed so as to shield both ends of the scanning direction of the pulse laser. .
由第1遮蔽部21而減小了陡部152的脈衝雷射150通過第1遮蔽部21，由此利用繞射等在掃描方向上的短軸方向後端部形成陡部153。其中，陡部153是對陡部152進行遮蔽而形成，因而相比於陡部152，擴展寬度變得相當小。 The pulse laser 150 having the steep portion 152 reduced by the first shielding portion 21 passes through the first shielding portion 21, whereby the steep portion 153 is formed at the rear end portion in the short-axis direction in the scanning direction by diffraction or the like. Among them, since the steep portion 153 is formed by shielding the steep portion 152, the expansion width is considerably smaller than that of the steep portion 152.
在該第1遮蔽部21中，理想的是在比高強度區域的短軸方向 端靠外側處遮蔽上述脈衝雷射的光束剖面的一部分，更理想的是配置於光束強度分佈中的最大強度的70%~90%的位置。 In the first shielding portion 21, it is desirable to be in the short axis direction of the high intensity region. A portion of the beam profile that shields the pulsed laser beam at the outer side is more preferably placed at a position of 70% to 90% of the maximum intensity in the beam intensity distribution.
此外，具有陡部153的脈衝雷射150穿透導入窗6而導入至處理室2內，進而前進並到達第2遮蔽部22。由第1遮蔽部21減小的陡部153位於第2遮蔽部22。因此，第2遮蔽部22中，除短軸方向內側的陡部的一部分外，遮蔽剩餘部分的陡部。已通過第2遮蔽部22的脈衝雷射150中，藉由繞射等形成陡部，但比起到達第2遮蔽部22前的陡部，擴展寬度進一步減小，從而陡部進一步減小。 Further, the pulsed laser 150 having the steep portion 153 penetrates the introduction window 6 and is introduced into the processing chamber 2 to advance and reach the second shielding portion 22. The steep portion 153 which is reduced by the first shielding portion 21 is located in the second shielding portion 22. Therefore, in the second shielding portion 22, the steep portion of the remaining portion is shielded except for a part of the steep portion on the inner side in the short-axis direction. In the pulse laser 150 that has passed through the second shielding portion 22, a steep portion is formed by diffraction or the like, but the expansion width is further reduced as compared with the steep portion before reaching the second shielding portion 22, and the steep portion is further reduced.
該第2遮蔽部22中，理想的是在比高強度區域的短軸方向端靠外側處遮蔽上述脈衝雷射的光束剖面的一部分，理想的是配置在通過第1遮蔽部21後的光束強度分佈中的最大強度的70%~90%的位置。 In the second shielding portion 22, it is preferable that a part of the beam cross section of the pulse laser is shielded outside the end in the short-axis direction of the high-intensity region, and it is preferable to arrange the beam intensity after passing through the first shielding portion 21. The position of the maximum intensity in the distribution is 70% to 90%.
另外，上述各實施方式中，藉由將遮蔽部配置在光路上，而減小了掃描方向上的短軸方向後端的陡部寬度，例如，亦可由柱狀透鏡12c進行矽膜位置相對於成像位置的調整，或使用成像性能更佳的透鏡組等來作為柱狀透鏡12c而實現陡部寬度減小，亦可與遮蔽部組合而進行。 Further, in each of the above embodiments, the shielding portion is disposed on the optical path, and the width of the steep portion at the rear end in the short-axis direction in the scanning direction is reduced. For example, the position of the diaphragm is relative to the imaging by the lenticular lens 12c. The adjustment of the position or the use of a lens group or the like having a better imaging performance as the lenticular lens 12c realizes a reduction in the steep portion width, and may be performed in combination with the shielding portion.
[實施例1] [Example 1]
其次，對本發明的實施例進行說明。 Next, an embodiment of the present invention will be described.
準備形成著50nm厚的非晶形矽膜的基板，在圖1的實施方式的雷射處理裝置中，將脈衝振盪雷射光源設為準分子雷射振盪 器(商品名：LSX540C)，以脈衝頻率300Hz輸出波長308nm的脈衝雷射。 Preparing a substrate having a 50 nm thick amorphous germanium film, and in the laser processing apparatus of the embodiment of FIG. 1, the pulsed laser light source is set to excimer laser oscillation. (trade name: LSX540C), a pulsed laser with a wavelength of 308 nm is output at a pulse frequency of 300 Hz.
藉由光學系統將光束尺寸整形為370mm×0.4mm的線形光束，藉由罩幕將光束掃描方向上的短軸方向後端部的陡部的寬度設為40μm。而且，為了進行比較，而準備將罩幕設置於相對於非晶形矽膜高的位置，且將短軸方向的陡部的寬度設為70μm的基板。 The beam size was shaped into a linear beam of 370 mm × 0.4 mm by an optical system, and the width of the steep portion at the rear end portion in the short-axis direction in the beam scanning direction was set to 40 μm by the mask. Further, for comparison, a mask was placed at a position higher than the amorphous ruthenium film, and the width of the steep portion in the short-axis direction was set to 70 μm.
重疊次數設為20次。該條件下，對於結晶化而言最佳的照射能量密度為310mJ/cm2~330mJ/cm2的範圍。另外，該條件下掃描間距為20μm。 The number of overlaps is set to 20 times. Under these conditions, the optimum irradiation energy density for crystallization is in the range of 310 mJ/cm 2 to 330 mJ/cm 2 . In addition, the scanning pitch was 20 μm under this condition.
進而，藉由衰減器的調整將照射能量密度變更為310mJ/cm2、320mJ/cm2、330mJ/cm2、340mJ/cm2、350mJ/cm2、360mJ/cm2、370mJ/cm2而進行照射試驗，並對結晶性進行評估。該例的結晶化時的最佳能量密度範圍(OED)為310mJ/cm2~340mJ/cm2，但為了使由能量密度的變動所造成的影響更為顯著，關於350mJ/cm2的試驗例，藉由光學顯微鏡進行表面觀察，將在暗視野觀察下所獲得的表面像表示於圖7中。 Further, by adjusting the attenuator to change the irradiation energy density of 310mJ / cm 2, 320mJ / cm 2, 330mJ / cm 2, 340mJ / cm 2, 350mJ / cm 2, 360mJ / cm 2, 370mJ / cm 2 is carried out The irradiation test was conducted and the crystallinity was evaluated. The preferred embodiment of the energy density range (the OED) during crystallization of 310mJ / cm 2 ~ 340mJ / cm 2, but in order to influence the energy density variation caused by the more significant, regarding Test Example 350mJ / cm 2 of The surface image obtained by observation under a dark field is shown in Fig. 7 by surface observation by an optical microscope.
結果，發明例中，因每次照射的短軸方向熔融區域端部的凸起的間隔為固定值亦即20μm，故未識別為照射不均。 As a result, in the inventive example, since the interval of the projections at the end portions of the short-axis direction melting region per irradiation was a fixed value, that is, 20 μm, it was not recognized as uneven irradiation.
比較例中，儘管每次雷射照射的矽膜的機械移動量為20μm，但實際的熔融寬度變寬而產生短軸方向熔融區域端部的凸起增大的部分。由於照射該部分時的雷射的脈衝能量變為相對高的值， 從而識別為照射不均。 In the comparative example, although the mechanical movement amount of the ruthenium film per laser irradiation was 20 μm, the actual melt width was widened to cause a portion where the projection of the end portion of the short-axis direction melting region was increased. Since the pulse energy of the laser when irradiating the portion becomes a relatively high value, It is thus identified as uneven illumination.
以上，根據上述實施方式對本發明進行了說明，但本發明不限定於上述說明的內容，只要不脫離本發明的範圍則可進行適當的變更。 The present invention has been described above based on the above embodiments, but the present invention is not limited to the above description, and may be appropriately modified without departing from the scope of the invention.
150‧‧‧脈衝雷射 150‧‧‧pulse laser
151‧‧‧平坦部 151‧‧‧ Flat Department
152、153‧‧‧陡部 152, 153‧‧ ‧ steep
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