TWI632011B - Laser processing method and laser processing device - Google Patents
Laser processing method and laser processing device Download PDFInfo
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Abstract
本發明降低因脈衝雷射的重疊照射而形成於半導體膜的凸起部的不良影響。本發明的雷射處理方法在非單晶半導體膜上一邊掃描具有規定的光束剖面形狀的脈衝雷射一邊以規定的掃描間距重疊照射而形成結晶半導體膜，將凸起部的底邊的掃描方向長度設為b，將掃描間距設為p，其中上述凸起部是藉由對半導體膜的脈衝雷射的照射而形成於在半導體膜上所照射的脈衝雷射光束的掃描方向後端側，將掃描間距設定為滿足式0.75b≧p≧0.25b的範圍而進行脈衝雷射的重疊照射，藉此使凸起部彼此接近地形成而減小凸起部的高低差，從而減少照射不均。 The present invention reduces the adverse effects of the bumps formed on the semiconductor film due to overlapping laser pulse irradiation. The laser processing method of the present invention forms a crystalline semiconductor film by superimposing and irradiating at a predetermined scanning pitch on a non-single-crystal semiconductor film while scanning a pulsed laser having a predetermined beam cross-sectional shape, and scanning the bottom side of the protrusion The length is set to b, and the scanning pitch is set to p, wherein the convex portion is formed on the rear end side in the scanning direction of the pulsed laser beam irradiated on the semiconductor film by irradiating the semiconductor film with pulsed laser, The scanning pitch is set to satisfy the range of formula 0.75b≧p≧0.25b and pulse laser overlapping irradiation is performed, whereby the convex portions are formed close to each other to reduce the height difference of the convex portions, thereby reducing uneven irradiation .
Description
本發明是有關於一種雷射回火方法以及雷射回火裝置，該雷射回火方法一邊對非單晶半導體掃描線形光束形狀的脈衝雷射一邊進行多次的重疊照射而進行非晶質膜的結晶化或結晶膜的改質。 The present invention relates to a laser tempering method and a laser tempering device. The laser tempering method performs a plurality of overlapping irradiations on a non-single crystal semiconductor scanning linear beam shape pulse laser to perform amorphous Crystallization of the film or modification of the crystalline film.
一般來說，電視機(television，TV)或個人電腦(personal computer，PC)顯示器中使用的薄膜電晶體由非晶形(amorphous)矽(以後稱作a-矽)所構成，藉由以某些手段將矽結晶化(以後稱作p-矽)而加以利用，則能夠使其作為薄膜電晶體(Thin Film Transistor，TFT)的性能格外提昇。目前，作為低溫下的Si結晶化製程，準分子雷射回火技術已得到實用化，在用於智慧型電話等小型顯示器用途中被頻繁利用，進而正實現對大畫面顯示器等的實用化。 Generally speaking, thin-film transistors used in television (TV) or personal computer (PC) monitors are composed of amorphous silicon (hereinafter referred to as a-silicon), and by certain Means of crystallizing silicon (hereinafter referred to as p-silicon) and making use of it can improve its performance as a thin film transistor (Thin Film Transistor, TFT). At present, as a Si crystallization process at a low temperature, excimer laser tempering technology has been put into practical use, and it is frequently used in small display applications such as smart phones, and is now being put to practical use on large-screen displays.
該雷射回火法是如下方法，即，藉由將具有高脈衝能量的準分子雷射照射至非單晶半導體膜，而吸收了光能的半導體成為熔融或半熔融狀態，然後在冷卻凝固時結晶化。此時，為了對 寬廣區域進行處理，而例如使整形為線形光束形狀的脈衝雷射一邊相對地沿短軸方向掃描一邊照射。通常藉由使設置著非單晶半導體膜的設置台移動來進行脈衝雷射的掃描。 This laser tempering method is a method in which, by irradiating an excimer laser with high pulse energy to a non-single crystal semiconductor film, the semiconductor that has absorbed light energy becomes molten or semi-molten, and then solidifies on cooling Time crystallization. At this time, in order to A wide area is processed, and for example, a pulse laser shaped into a linear beam shape is irradiated while scanning relatively in the short axis direction. Usually, the laser scanning is performed by moving the installation stage on which the non-single-crystal semiconductor film is installed.
上述脈衝雷射的掃描中，以對非單晶半導體膜的同一位置多次照射(重疊照射)脈衝雷射的方式，以規定的掃描間距使脈衝雷射在掃描方向上移動。藉此，可進行尺寸大的半導體膜的雷射回火處理。 In the above-mentioned pulse laser scanning, the pulse laser is moved in the scanning direction at a predetermined scanning pitch so that the same position of the non-single-crystal semiconductor film is irradiated multiple times (overlapping irradiation). This makes it possible to perform laser tempering of a large-sized semiconductor film.
而且，在使用了現有的線形光束的雷射回火處理中，將雷射脈衝的掃描方向的光束寬度固定為0.35mm~0.4mm左右，為了確保多個薄膜電晶體的性能的均勻性而將每一脈衝的基板輸送量設定為光束寬度的5%到8%左右，考慮到生產效率後規定雷射的照射次數。 In addition, in the laser tempering process using the existing linear beam, the beam width in the scanning direction of the laser pulse is fixed at about 0.35 mm to 0.4 mm. In order to ensure the uniformity of the performance of a plurality of thin film transistors, The amount of substrate transport per pulse is set to about 5% to 8% of the beam width, and the number of laser irradiations is specified after considering the production efficiency.
此外，在脈衝雷射的光束剖面的強度分佈中，具有在掃描方向端部強度逐漸降低而為零的區域。專利文獻1中，在重疊照射具有此種強度分佈的脈衝雷射時，在不同的強度區域經多次照射的照射區域間在形成電晶體時的遷移率中產生差異成為課題(段落0015~段落0019)，為了解決該課題而提出根據強度區域將掃描間距設為規定的值以下的方法。專利文獻1中，藉由該方法可製造遷移率的不均極小的薄膜電晶體(段落0026)。 In addition, the intensity distribution of the beam profile of the pulsed laser has a region where the intensity gradually decreases to zero at the end in the scanning direction. In Patent Document 1, when pulse lasers having such an intensity distribution are irradiated by overlap, it is a problem that a difference in the mobility when forming a transistor is formed between the irradiation areas that are irradiated multiple times in different intensity areas (paragraph 0015 to paragraph In order to solve this problem, a method of setting the scanning pitch to a predetermined value or less based on the intensity region is proposed. In Patent Document 1, a thin-film transistor with extremely small variation in mobility can be manufactured by this method (paragraph 0026).
[先前技術文獻] [Prior Technical Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開平9-45926號公報 [Patent Document 1] Japanese Patent Laid-Open No. 9-45926
上述專利文獻1中，解決由在雷射光束的掃描方向前方強度逐漸降低的強度分佈所引起的問題，作為具體例，則例示1mm的掃描間距。 The above Patent Document 1 solves the problem caused by the intensity distribution in which the intensity gradually decreases in the forward direction in the scanning direction of the laser beam. As a specific example, a scanning pitch of 1 mm is illustrated.
然而，根據本申請案發明者等人的研究可知，在專利文獻1所示的掃描間距下，因在雷射光束的掃描方向後端部強度逐漸降低的區域(以下稱作陡部(steepness))而對半導體的性能產生影響。 However, according to the research of the inventors of the present application, it is known that at the scanning pitch shown in Patent Document 1, the intensity of the rear end portion in the scanning direction of the laser beam gradually decreases (hereinafter referred to as steepness) ) And affect the performance of the semiconductor.
亦即，如圖6所示，在被照射脈衝雷射的例如矽膜101上，根據線形光束短軸的端部而每次照射脈衝時形成多晶矽膜的凸起部102。該部分相當於雷射照射的半導體膜的熔融部與未被照射具有足以熔融半導體膜的強度的雷射而保持為固體的部分的交界處。認為該凸起與照射能量的強度成比例地增大。亦即，隨著照射能量變大而在半導體膜的膜厚方向上的熔融推進，且膜整體熔融後成為液體的半導體膜層的溫度亦增大。在該液相部分伴隨溫度降低而結晶化時，液體一邊被溫度優先地開始降低的固液界面亦即線形光束短軸邊緣部吸引一邊固化，因而產生凸起。 That is, as shown in FIG. 6, on the silicon film 101 irradiated with pulse laser, for example, the convex portion 102 of the polycrystalline silicon film is formed every time the pulse is irradiated according to the end of the short axis of the linear beam. This portion corresponds to the boundary between the melted portion of the semiconductor film irradiated with laser light and the portion that is not irradiated with a laser beam having sufficient strength to melt the semiconductor film and remains solid. It is considered that this protrusion increases in proportion to the intensity of the irradiation energy. That is, as the irradiation energy becomes larger, the melting in the film thickness direction of the semiconductor film advances, and the temperature of the semiconductor film layer that becomes a liquid after the entire film is melted also increases. When the liquid phase portion is crystallized with a decrease in temperature, the liquid solidifies while being attracted by the solid-liquid interface, which is a temperature-priority lowering edge of the linear beam, and then solidifies, thereby causing protrusions.
在上述凸起部中，雷射的能量變動、線形光束短軸形狀的變化、相對於雷射光束而相對移動的半導體膜的位置的紊亂等成為因素，從而表現為凸起部的高度或間隔的紊亂。該紊亂被認知為照射不均，在將半導體膜用作元件時成為特性的不均。 In the above-mentioned bumps, the variation of the laser energy, the change of the short-axis shape of the linear beam, and the disorder of the position of the semiconductor film relatively moved relative to the laser beam become factors, which are expressed as the height or spacing of the bumps Of disorder. This disorder is recognized as unevenness in irradiation, and becomes unevenness in characteristics when a semiconductor film is used as an element.
本發明以上述情況為背景而完成，其目的在於提供一種 可減輕光束的掃描方向端部的陡部的影響而製造照射不均少的結晶半導體膜的雷射處理方法以及雷射處理裝置。 The present invention was completed on the background of the above circumstances, and its purpose is to provide a A laser processing method and a laser processing apparatus that can reduce the influence of the steep portion at the end in the scanning direction of the light beam and produce a crystalline semiconductor film with little unevenness in irradiation.
亦即，本發明的雷射處理方法中的第1本發明，是一邊在非單晶半導體膜上掃描具有規定的光束剖面形狀的脈衝雷射，一邊以規定的掃描間距重疊照射而形成結晶半導體膜，上述雷射處理方法的特徵在於： 將凸起部的底邊的掃描方向長度設為b，將上述掃描間距設為p，其中上述凸起部是藉由對上述半導體膜的脈衝雷射的照射而形成於在上述半導體膜上所照射的脈衝雷射光束的掃描方向後端側， 將上述掃描間距設定為滿足下述式(1)的範圍而進行上述脈衝雷射的重疊照射： 0.75b≧p≧0.25b...(1)。 That is, the first invention of the laser processing method of the present invention is to form a crystalline semiconductor while scanning and irradiating a pulse laser having a predetermined beam cross-sectional shape on a non-single-crystal semiconductor film at a predetermined scanning pitch Membrane, the above laser processing method is characterized by: The length of the bottom of the convex portion in the scanning direction is b, and the scanning pitch is p, wherein the convex portion is formed on the semiconductor film by pulse laser irradiation of the semiconductor film The back side of the scanning direction of the irradiated pulsed laser beam, The above-mentioned scanning pitch is set to satisfy the range of the following formula (1) to perform the overlapping irradiation of the above-mentioned pulse laser: 0.75b≧p≧0.25b...(1).
第2本發明的雷射處理方法的特徵在於：在上述第1本發明中，在上述半導體膜上，以對於結晶化而言最佳的照射能量密度進行對上述半導體膜的脈衝雷射的照射。 The second laser processing method of the present invention is characterized in that in the first invention, the semiconductor film is irradiated with pulsed laser light on the semiconductor film at an irradiation energy density optimum for crystallization .
第3本發明的雷射處理方法的特徵在於：在上述第1本發明或第2本發明中，上述脈衝雷射的波長為400nm以下。 The laser processing method of the third invention is characterized in that in the first invention or the second invention, the wavelength of the pulse laser is 400 nm or less.
第4本發明的雷射處理方法的特徵在於：在上述第1本發明至第3本發明中的任一者中，上述脈衝雷射的脈衝半寬值為 200ns以下。 A fourth laser processing method of the present invention is characterized in that in any of the first to third inventions described above, the pulse half width of the pulsed laser is Below 200ns.
第5本發明的雷射處理方法的特徵在於：在上述第1本發明至第4本發明中的任一者中，上述非單晶半導體為矽。 A fifth laser processing method of the present invention is characterized in that in any of the first to fourth inventions, the non-single-crystal semiconductor is silicon.
第6本發明的雷射處理方法的特徵在於：在上述第1本發明至第5本發明中的任一者中，上述掃描間距為5μm~20μm。 The sixth laser processing method of the present invention is characterized in that in any of the first to fifth inventions, the scanning pitch is 5 μm to 20 μm.
第7本發明的雷射處理方法的特徵在於：在上述第1本發明至第6本發明中的任一者中，對凸起部的底邊的掃描方向長度進行測定，並根據上述測定結果來決定上述掃描間距，其中上述凸起部是藉由對上述半導體膜的脈衝雷射的照射而形成於在上述半導體膜上所照射的脈衝雷射光束的掃描方向後端側。 The seventh laser processing method of the present invention is characterized in that in any one of the first to sixth inventions described above, the length of the bottom side of the convex portion in the scanning direction is measured and based on the above measurement result The scanning pitch is determined, wherein the convex portion is formed on the rear end side in the scanning direction of the pulsed laser beam irradiated on the semiconductor film by irradiating the semiconductor film with pulsed laser light.
第8本發明的雷射處理裝置的特徵在於包括：脈衝振盪雷射光源，以規定的重複頻率輸出脈衝雷射；光學系統，對上述脈衝雷射的光束剖面形狀進行整形並導引至非單晶半導體膜；衰減器，對上述脈衝雷射的能量密度進行調整；掃描裝置，使上述脈衝雷射對上述非單晶半導體膜以規定的掃描速度相對地進行掃描；以及控制部，對上述雷射光源、上述衰減器以及上述掃描裝置進行控制，上述控制部獲取凸起部的底邊的掃描方向長度b，上述凸起部是藉由對半導體膜的脈衝雷射的照射而形成於在上述半導體膜上所照射的脈衝雷射光束的掃描方向後端側，並依據上述掃描方向 長度，以上述脈衝雷射對上述非單晶半導體膜照射時的掃描間距p滿足下述式(1)的方式，來決定上述雷射光源中的重複頻率與上述掃描裝置的掃描速度：0.75b≧p≧0.25b...(1)。 An eighth laser processing apparatus of the present invention is characterized by including: a pulsed oscillating laser light source that outputs a pulsed laser at a prescribed repetition frequency; and an optical system that shapes the beam profile of the pulsed laser and guides it to a non-single A crystalline semiconductor film; an attenuator that adjusts the energy density of the pulsed laser; a scanning device that causes the pulsed laser to relatively scan the non-single-crystal semiconductor film at a predetermined scanning speed; and a control unit that controls the laser The light source, the attenuator, and the scanning device are controlled. The control unit acquires the length b of the bottom of the convex portion in the scanning direction. The convex portion is formed by irradiating the semiconductor film with pulsed laser light. The rear end side of the scanning direction of the pulsed laser beam irradiated on the semiconductor film, and according to the above scanning direction The length determines the repetition frequency in the laser light source and the scanning speed of the scanning device so that the scanning pitch p when the pulsed laser irradiates the non-single-crystal semiconductor film satisfies the following formula (1): 0.75b ≧p≧0.25b...(1).
第9本發明的雷射處理裝置的特徵在於：在上述第8本發明中，包括膜表面形狀計測裝置，上述膜表面形狀計測裝置對凸起部的底邊的掃描方向長度b進行計測，上述凸起部是藉由對半導體膜的脈衝雷射的照射而形成於在上述半導體膜上所照射的脈衝雷射光束的掃描方向後端側。 A laser processing apparatus according to a ninth aspect of the present invention is characterized in that the eighth aspect of the present invention includes a film surface shape measuring device that measures the scanning direction length b of the bottom edge of the convex portion. The convex portion is formed on the rear end side in the scanning direction of the pulsed laser beam irradiated on the semiconductor film by irradiation of the pulsed laser light on the semiconductor film.
本申請案發明中，藉由將掃描間距設為適當範圍，而由雷射光束剖面的掃描方向後端側的陡部形成的凸起部彼此接近地形成。此處，對規定掃描間距的理由進行說明。 In the invention of the present application, by setting the scanning pitch to an appropriate range, the convex portions formed by the steep portions on the rear end side in the scanning direction of the laser beam profile are formed close to each other. Here, the reason for specifying the scanning pitch will be described.
將凸起部的底邊設為b，藉由減小掃描間距p而可減小凸起部間的高低差。若p大於0.75b，則無法充分獲得減小高低差的效果。 而且，若p減小至小於0.25b，則重疊次數增多，生產效率下降。 因此，關於掃描間距p，設為0.75b以下且0.25b以上。另外，基於相同的理由，理想的是分別設為小於0.7b且為0.5b以上。 Let the bottom of the convex portion be b, and by reducing the scanning pitch p, the height difference between the convex portions can be reduced. If p is larger than 0.75b, the effect of reducing the height difference cannot be sufficiently obtained. Furthermore, if p is reduced to less than 0.25b, the number of overlaps increases, and production efficiency decreases. Therefore, the scan pitch p is set to 0.75b or less and 0.25b or more. In addition, for the same reason, it is desirable to set each to less than 0.7b and 0.5b or more.
另外，掃描間距p的絕對數值不受限定，例如可例示5μm~20μm。 In addition, the absolute value of the scanning pitch p is not limited, and for example, 5 μm to 20 μm can be exemplified.
凸起部的底邊的大小在本發明中不作特別限定，例如例 示10μm~30μm的範圍。 The size of the bottom of the protrusion is not particularly limited in the present invention, for example Shows the range of 10μm ~ 30μm.
凸起部設為如下，即，以藉由雷射光束的掃描方向後端部側的照射而形成的半導體膜的熔融部與未被照射具有足以熔融半導體膜的強度的雷射而保持固體狀態的部分的交界處為起點，經由半導體膜的凸起高度為最大的位置並到達該凸起高度的減少傾向結束的地點為止。另外，凸起部高度的增減傾向可藉由使用凸起部高度的近似線(多項式近似線等)等而表現得明確。 The convex portion is set as follows, that is, the solid portion of the semiconductor film formed by irradiation of the laser beam in the scanning direction at the rear end side and the laser beam that has not been irradiated and has a strength sufficient to melt the semiconductor film to maintain a solid state The boundary of the part is the starting point, and the height of the protrusion passing through the semiconductor film is the largest and reaches the point where the reduction tendency of the protrusion height ends. In addition, the tendency to increase or decrease the height of the convex portion can be clearly expressed by using an approximate line (polynomial approximate line, etc.) of the height of the convex portion.
而且，凸起部的底邊的大小受到脈衝雷射的掃描方向後端的陡部的寬度的大小的影響。另外，陡部可作為具有光束強度分佈中的最大強度的10%以上且90%以下的強度的區域來表示。 本發明的脈衝雷射中的掃描方向後端側的陡部的寬度例如例示為100μm以下。陡部的寬度可藉由光學構件的設計或狹縫在光路上的配置等來進行調整。然而，若使陡部變得過窄，則會在光束強度分佈中的平坦部的短軸方向端部形成強度急遽增加的突部。因此，陡部的寬度例如調整為30μm以上。 Moreover, the size of the bottom of the convex portion is affected by the width of the steep portion at the rear end in the scanning direction of the pulse laser. In addition, the steep portion can be expressed as a region having an intensity of 10% or more and 90% or less of the maximum intensity in the beam intensity distribution. The width of the steep portion on the rear end side in the scanning direction in the pulse laser of the present invention is exemplified as 100 μm or less, for example. The width of the steep portion can be adjusted by the design of the optical member or the arrangement of the slit on the optical path. However, if the steep portion is made too narrow, a protrusion with a sharply increased intensity will be formed at the short-axis direction end of the flat portion in the beam intensity distribution. Therefore, the width of the steep portion is adjusted to 30 μm or more, for example.
另外，理想的是在上述半導體膜上以對於結晶化而言最佳的照射能量密度來進行脈衝雷射對半導體膜的照射。對於結晶化而言最佳的照射能量密度能夠以適當的基準來決定，例如，可設為與藉由N次的多次照射而結晶粒徑成長達到飽和的照射脈衝能量密度E同等程度的照射脈衝能量密度。具體而言，理想的是E×0.98~E×1.03的範圍。最佳的照射能量密度因照射次數等而不同，本申請案發明中不限定為特定的數值，例如可例示250mJ/cm2 ~500mJ/cm2。 In addition, it is desirable to irradiate the semiconductor film with a pulse laser on the semiconductor film at an irradiation energy density optimal for crystallization. The optimal irradiation energy density for crystallization can be determined on an appropriate basis. For example, the irradiation energy density E can be set to the same level as the irradiation pulse energy density E obtained by saturating the crystal particle size by N times of multiple irradiations. Pulse energy density. Specifically, the range of E×0.98 to E×1.03 is ideal. The optimal irradiation energy density differs depending on the number of irradiations and the like, and is not limited to a specific value in the invention of the present application, for example, 250 mJ/cm 2 to 500 mJ/cm 2 can be exemplified.
而且，本發明中使用的脈衝雷射不限定為特定的脈衝雷射，例如可例示波長400nm以下、半寬值200ns以下的脈衝雷射。 而且，脈衝雷射的種類亦不作特別限定，例如可列舉準分子雷射。 In addition, the pulse laser used in the present invention is not limited to a specific pulse laser. For example, a pulse laser having a wavelength of 400 nm or less and a half-width value of 200 ns or less can be exemplified. In addition, the type of pulsed laser is not particularly limited, and examples include excimer laser.
藉由脈衝雷射而形成為結晶半導體膜的非單晶半導體膜在本發明中不限定為特定的材料，例如可例示以矽作為材料。 本發明中，無論為什麼材料均可獲得效果。 The non-single-crystal semiconductor film formed as a crystalline semiconductor film by pulse laser is not limited to a specific material in the present invention, and for example, silicon can be exemplified as the material. In the present invention, the effect can be obtained regardless of the material.
而且，本發明的雷射處理裝置中，以規定的重複頻率輸出脈衝雷射。該重複頻率在本發明中不作特別限定，例如可列舉1Hz~1200Hz的重複頻率。重複頻率可受到控制部的控制而在雷射光源中進行設定。 Furthermore, in the laser processing apparatus of the present invention, pulse laser is output at a predetermined repetition frequency. The repetition frequency is not particularly limited in the present invention, and examples include repetition frequencies of 1 Hz to 1200 Hz. The repetition frequency can be set in the laser light source under the control of the control unit.
而且，脈衝雷射使用柱狀透鏡等各種光學構件而整形為適當形狀，例如整形為四邊形狀或線形光束形狀。另外，線形光束的形狀不限定為特定的形狀，只要為長軸相對於短軸具有大的比率的形狀即可。例如，可列舉該比率為10以上的形狀。長軸側的長度、短軸側的長度在本發明中不限定為特定的長度，例如，可列舉長軸側的長度為370mm~1300mm、短軸側的長度為100μm~500μm。而且，脈衝雷射藉由均束器、柱狀透鏡等光學構件，而可設為如下分佈，即，在光束強度分佈中例如具有最大強度的96%以上的平坦部與位於端部的最大強度的10%~90%的陡部。 Furthermore, the pulsed laser is shaped into an appropriate shape using various optical members such as a lenticular lens, for example, shaped into a quadrilateral shape or a linear beam shape. In addition, the shape of the linear beam is not limited to a specific shape, as long as the shape has a large ratio of the long axis to the short axis. For example, a shape in which the ratio is 10 or more can be mentioned. The length of the long-axis side and the length of the short-axis side are not limited to specific lengths in the present invention. For example, the length of the long-axis side is 370 mm to 1300 mm, and the length of the short-axis side is 100 μm to 500 μm. In addition, the pulse laser can be set as a distribution by an optical member such as a beam homogenizer, a lenticular lens, etc., in the beam intensity distribution, for example, a flat portion having 96% or more of the maximum intensity and a maximum intensity at the end 10%~90% of the steep part.
衰減器能夠以脈衝雷射光在非單晶半導體膜上獲得規定的能量密度的方式來調整脈衝雷射的穿透率，且可受到控制部 的控制來調整上述穿透率。 The attenuator can adjust the penetration rate of the pulsed laser in such a way that the pulsed laser light obtains a prescribed energy density on the non-single crystal semiconductor film, and can be controlled by the control section Control to adjust the above penetration rate.
而且，作為使脈衝雷射對非單晶半導體膜相對地進行掃描的裝置，可具備使脈衝雷射或非單晶半導體膜中的一者或兩者移動的移動裝置。脈衝雷射的移動中，除了水平方向的移動外，可藉由使用了多面鏡(polygon mirror)或電鏡(galvanomirror)的機構而執行。非單晶半導體膜的移動可藉由使保持非單晶半導體膜的平台等移動的機構等而執行。 Further, as a device that relatively scans the non-single-crystal semiconductor film by the pulsed laser, a moving device that moves one or both of the pulsed laser or the non-single-crystal semiconductor film may be provided. The movement of the pulsed laser can be performed by a mechanism using a polygon mirror or a galvanomirror in addition to the horizontal movement. The movement of the non-single-crystal semiconductor film can be performed by a mechanism or the like that moves a platform or the like that holds the non-single-crystal semiconductor film.
另外，掃描速度在本發明中不作特別限定，例如可例示1mm/秒~100mm/秒。掃描裝置可受到控制部的控制來設定掃描速度。 In addition, the scanning speed is not particularly limited in the present invention, and for example, 1 mm/sec to 100 mm/sec can be exemplified. The scanning device can be controlled by the control unit to set the scanning speed.
控制部可獲取凸起部的底邊的掃描方向長度來決定掃描間距，凸起部的長度可藉由膜表面形狀計測裝置而計測。膜表面形狀計測裝置只要為可計測接受到脈衝雷射的照射的半導體膜的膜表面形狀的裝置即可，不限定為特定者，例如，可列舉原子力顯微鏡(atomic force microscope，AFM)、探針式表面形狀測定器等。控制部基於掃描方向長度來決定掃描間距，並控制雷射光源、衰減器以及掃描裝置而執行處理。掃描間距藉由雷射光源的重複頻率與掃描裝置的掃描速度而規定，因而控制部可藉由設定該些中的一個或兩個來設定掃描間距。控制部由中央處理單元(Central Processing Unit，CPU)、使該CPU動作的程式、及記憶動作參數的記憶部等所構成。 The control part can acquire the length of the bottom of the convex part in the scanning direction to determine the scanning pitch, and the length of the convex part can be measured by a film surface shape measuring device. The film surface shape measuring device may be any device as long as it can measure the film surface shape of the semiconductor film which has been irradiated by the pulse laser, and is not limited to a specific one, and examples thereof include an atomic force microscope (AFM) and a probe Type surface shape measuring instrument etc. The control unit determines the scanning pitch based on the length in the scanning direction, and controls the laser light source, the attenuator, and the scanning device to execute processing. The scanning pitch is defined by the repetition frequency of the laser light source and the scanning speed of the scanning device, so the control section can set the scanning pitch by setting one or both of these. The control unit is composed of a central processing unit (Central Processing Unit, CPU), a program for operating the CPU, and a memory unit that stores operation parameters.
如以上說明般，根據本發明，藉由使由雷射光束剖面的 掃描方向後端側的陡部形成的凸起部彼此接近地形成而減小凸起部的高低差，從而具有降低照射不均的效果。 As explained above, according to the present invention, by The convex portions formed by the steep portion on the rear end side in the scanning direction are formed close to each other to reduce the height difference of the convex portions, thereby having an effect of reducing unevenness in irradiation.
1‧‧‧雷射回火裝置 1‧‧‧Laser tempering device
2‧‧‧處理室 2‧‧‧Processing room
3‧‧‧掃描裝置 3‧‧‧Scanning device
4‧‧‧基台 4‧‧‧Abutment
5‧‧‧基板配置台 5‧‧‧Substrate configuration table
6‧‧‧導入窗 6‧‧‧Import window
7‧‧‧控制部 7‧‧‧Control Department
10‧‧‧脈衝振盪雷射光源 10‧‧‧Pulse oscillation laser light source
11‧‧‧衰減器 11‧‧‧Attenuator
12‧‧‧光學系統 12‧‧‧Optical system
12a‧‧‧均束器 12a‧‧‧Beam homogenizer
12b‧‧‧反射鏡 12b‧‧‧Reflecting mirror
12c‧‧‧柱狀透鏡 12c‧‧‧Cylinder lens
15、150‧‧‧脈衝雷射 15, 150‧‧‧ pulse laser
20‧‧‧膜面形狀計測裝置 20‧‧‧ Membrane surface shape measuring device
100‧‧‧基板 100‧‧‧ substrate
101‧‧‧矽膜 101‧‧‧Silicon film
102‧‧‧凸起部 102‧‧‧Bump
151‧‧‧平坦部 151‧‧‧flat
152‧‧‧陡部 152‧‧‧Steep
圖1是表示本發明的一實施方式的雷射處理裝置的概略圖。 FIG. 1 is a schematic diagram showing a laser processing apparatus according to an embodiment of the present invention.
圖2是表示本發明的一實施方式的經整形的脈衝雷射的短軸方向上的光束強度分佈的圖。 FIG. 2 is a diagram showing the beam intensity distribution in the short-axis direction of the shaped pulse laser according to an embodiment of the present invention.
圖3是說明本發明的一實施方式的以本發明的掃描間距照射脈衝雷射時的凸起的形成的圖。 FIG. 3 is a diagram illustrating the formation of bumps when a pulse laser is irradiated at the scanning pitch of the present invention according to an embodiment of the present invention.
圖4是表示將本發明的一實施方式的照射不均加以數值化所得的試驗例的曲線圖。 4 is a graph showing a test example obtained by quantifying the unevenness of irradiation according to an embodiment of the present invention.
圖5是將本發明的一實施方式的照射不均進行加強所得的試驗例的圖像。 FIG. 5 is an image of a test example obtained by enhancing unevenness in irradiation according to an embodiment of the present invention.
圖6是說明以現有的掃描間距照射脈衝雷射時的凸起的形成的圖。 FIG. 6 is a diagram illustrating the formation of bumps when a pulse laser is irradiated at a conventional scanning pitch.
以下，根據隨附圖式對本發明的實施方式的雷射處理裝置1進行說明。 Hereinafter, the laser processing device 1 according to the embodiment of the present invention will be described based on the accompanying drawings.
雷射處理裝置1包括處理室2，在處理室2內具備可沿X-Y方向移動的掃描裝置3，且在該掃描裝置3的上部具備基台4。在基台4上設置基板配置台5作為平台。掃描裝置3藉由未圖示的馬達等驅動。而且，處理室2中設置著從外部導入脈衝雷射的導 入窗6。 The laser processing apparatus 1 includes a processing chamber 2, a scanning device 3 movable in the X-Y direction is provided in the processing chamber 2, and a base 4 is provided above the scanning device 3. The base station 4 is provided with a substrate placement table 5 as a platform. The scanning device 3 is driven by a motor or the like (not shown). In addition, the processing chamber 2 is provided with a guide for introducing a pulsed laser from the outside 入窗6.
在回火處理時，在該基板配置台5上設置著基板100等，該基板100形成著作為半導體膜的非單晶半導體即非晶質的矽膜101。矽膜101在未圖示的基板上，例如以40nm~100nm的厚度(具體而言例如以50nm厚度)而形成。該形成可藉由普通方法來進行，本發明中，半導體膜的形成方法不作特別限定。 During the tempering process, a substrate 100 and the like are provided on the substrate placement table 5, and the substrate 100 forms an amorphous silicon film 101 that is a non-single-crystal semiconductor which is a semiconductor film. The silicon film 101 is formed on a substrate (not shown) with a thickness of, for example, 40 nm to 100 nm (specifically, with a thickness of 50 nm, for example). This formation can be performed by a general method, and in the present invention, the method of forming the semiconductor film is not particularly limited.
另外，本實施方式中，對關於藉由雷射處理而將非晶質膜結晶化的雷射處理的內容進行說明，但本發明的雷射處理的內容並不限定於此，例如，亦可將非單晶的半導體膜單晶化，或進行結晶半導體膜的改質。 In addition, in this embodiment, the content of the laser processing for crystallizing the amorphous film by the laser processing will be described, but the content of the laser processing of the present invention is not limited to this, for example, it may be The non-single crystal semiconductor film is single crystallized, or the crystalline semiconductor film is modified.
在處理室2的外部設置著脈衝振盪雷射光源10。脈衝振盪雷射光源10由準分子雷射振盪器所構成，可輸出波長400nm以下、重複振盪頻率為1Hz~1200Hz的脈衝雷射，該脈衝振盪雷射光源10中，可藉由反饋控制以將脈衝雷射的輸出維持為規定範圍內的方式來進行控制。控制部7可進行控制地連接在脈衝振盪雷射光源10上，藉由控制部7而可調整由脈衝振盪雷射光源10輸出的脈衝雷射的重複頻率或輸出。 A pulsed laser light source 10 is provided outside the processing chamber 2. The pulsed oscillating laser light source 10 is composed of an excimer laser oscillator, and can output a pulsed laser with a wavelength below 400 nm and a repetitive oscillation frequency of 1 Hz to 1200 Hz. The pulsed oscillating laser light source 10 can be controlled by feedback The output of the pulse laser is controlled within a prescribed range. The control unit 7 is controllably connected to the pulse oscillation laser light source 10, and the control unit 7 can adjust the repetition frequency or output of the pulse laser output from the pulse oscillation laser light source 10.
控制部可以CPU或使該CPU動作的程式作為主要構成，此外亦可具備非揮發記憶體或隨機存取記憶體(Random Access Memory，RAM)等。 The control unit may have a CPU or a program for operating the CPU as a main component, and may further include a non-volatile memory or a random access memory (Random Access Memory, RAM).
由脈衝振盪雷射光源10進行脈衝振盪而輸出的脈衝雷射15利用衰減器11調整能量密度。衰減器11可由控制部7控制 地與其連接，可藉由控制部7調整穿透衰減器11的脈衝雷射15的穿透率。 The pulse laser 15 output by the pulse oscillation laser light source 10 performing pulse oscillation is adjusted by the attenuator 11 for energy density. The attenuator 11 can be controlled by the control section 7 The ground is connected to it, and the penetration rate of the pulse laser 15 penetrating the attenuator 11 can be adjusted by the control section 7.
已穿透衰減器11的脈衝雷射15到達光學系統12。光學系統12由均束器12a、反射鏡12b、柱狀透鏡12c等光學構件所構成，對脈衝雷射15向線形光束形狀進行整形或偏向，形成具有平坦部與陡部的光束強度分佈等，從而作為脈衝雷射150，通過設置在處理室2的導入窗6而照射至處理室2內的非晶質矽膜101。 另外，構成光學系統12的光學構件不限定為上述，可包括各種透鏡(均束器、柱狀透鏡等)、鏡面、波導部等。 The pulsed laser 15 that has penetrated the attenuator 11 reaches the optical system 12. The optical system 12 is composed of optical components such as a beam homogenizer 12a, a mirror 12b, a lenticular lens 12c, and the like, and shapes or deflects the shape of the pulsed laser 15-direction linear beam to form a beam intensity distribution having flat portions and steep portions. Therefore, as the pulse laser 150, the amorphous silicon film 101 in the processing chamber 2 is irradiated through the introduction window 6 provided in the processing chamber 2. In addition, the optical member constituting the optical system 12 is not limited to the above, and may include various lenses (beam homogenizer, lenticular lens, etc.), a mirror surface, a waveguide portion, and the like.
其次，對上述雷射處理裝置1的動作進行說明。 Next, the operation of the laser processing device 1 will be described.
脈衝振盪雷射光源10中，藉由控制部7的控制而以規定的重複頻率進行脈衝振盪，且以規定輸出而輸出脈衝雷射15。脈衝雷射15例如設為波長400nm以下、脈衝半寬值為200ns以下的脈衝雷射。然而，本發明並不限定於該些。 In the pulse oscillation laser light source 10, under the control of the control unit 7, pulse oscillation is performed at a predetermined repetition frequency, and pulse laser 15 is output at a predetermined output. The pulse laser 15 is, for example, a pulse laser having a wavelength of 400 nm or less and a pulse half-width value of 200 ns or less. However, the present invention is not limited to these.
脈衝雷射15利用由控制部7控制的衰減器11而調整脈衝能量密度。衰減器11設定為規定的衰減率，且以在對矽膜101的照射面上獲得對於結晶化而言最佳的照射脈衝能量密度的方式來調整衰減率。例如在將非晶質的矽膜101結晶化等的情況下，可在其照射面上調整為能量密度為250mJ/cm2~500mJ/cm2。 The pulse laser 15 uses the attenuator 11 controlled by the control unit 7 to adjust the pulse energy density. The attenuator 11 is set to a predetermined attenuation rate, and the attenuation rate is adjusted so that the energy density of the irradiation pulse that is optimal for crystallization on the irradiation surface of the silicon film 101 is obtained. For example, in the case of crystallizing the amorphous silicon film 101, the energy density on the irradiated surface can be adjusted to 250 mJ/cm 2 to 500 mJ/cm 2 .
已穿透衰減器11的脈衝雷射15利用光學系統12而整形為線形光束形狀，進而經由光學系統12的柱狀透鏡12c而使短軸寬度聚光，並導入至設置於處理室2的導入窗6。 The pulsed laser 15 that has passed through the attenuator 11 is shaped into a linear beam shape by the optical system 12, and then the short axis width is condensed through the cylindrical lens 12 c of the optical system 12 and introduced into the introduction provided in the processing chamber 2 Window 6.
線形光束例如整形為長軸側的長度為370mm~1300mm、短軸側的長度為100μm~500μm的形狀。 For example, the linear beam is shaped to have a length of 370 mm to 1300 mm on the long axis side and a length of 100 μm to 500 μm on the short axis side.
線形光束150如圖2所示，包括：平坦部151，相對於最大能量強度為96%以上；及陡部152，位於長軸方向的兩端部，具有比上述平坦部151小的能量強度，且朝向外側而能量強度逐漸降低。陡部為最大強度的10%~90%的範圍的區域。 As shown in FIG. 2, the linear beam 150 includes a flat portion 151 with a maximum energy intensity of 96% or more; and a steep portion 152 located at both ends in the long axis direction and having a smaller energy intensity than the flat portion 151, And toward the outside, the energy intensity gradually decreases. The steep part is an area in the range of 10% to 90% of the maximum intensity.
線形光束150的在矽膜101上的陡部152的寬度例如為40μm~100μm。 The width of the steep portion 152 of the linear beam 150 on the silicon film 101 is, for example, 40 μm to 100 μm.
利用由控制部7控制的掃描裝置3而以規定的掃描速度使矽膜101移動，藉此可一邊使線形光束150對矽膜101相對地掃描一邊照射至矽膜101。此時的掃描速度例如設為1mm/秒~100mm/秒的範圍內。然而，本發明中，上述掃描速度並不限定為特定者。 By using the scanning device 3 controlled by the control unit 7 to move the silicon film 101 at a predetermined scanning speed, the silicon film 101 can be irradiated while the linear beam 150 is relatively scanning the silicon film 101. The scanning speed at this time is set in the range of 1 mm/sec to 100 mm/sec, for example. However, in the present invention, the above scanning speed is not limited to a specific one.
另外，在決定掃描速度以及重複頻率時，如圖3所示，將藉由脈衝雷射15的照射而形成於矽膜101上的凸起部102的底邊的掃描方向長度設為b，以掃描間距p滿足下述式的方式決定。 In addition, when determining the scanning speed and the repetition frequency, as shown in FIG. 3, let the length of the bottom of the bottom side of the convex portion 102 formed on the silicon film 101 by the irradiation of the pulse laser 15 be b, The scanning pitch p is determined so as to satisfy the following formula.
0.75b≧p≧0.25b...(1) 0.75b≧p≧0.25b...(1)
掃描間距必須滿足上述(1)式的條件，且不限定為特定的數值，但例如可列舉5μm~15μm的範圍。 The scanning pitch must satisfy the condition of the above formula (1) and is not limited to a specific value, but, for example, a range of 5 μm to 15 μm may be mentioned.
另外，凸起部102的底邊的掃描方向長度可由控制部7而預 先獲取，藉此可決定掃描間距。 In addition, the length of the bottom side of the convex portion 102 in the scanning direction can be predicted by the control portion 7 Obtain first to determine the scan pitch.
凸起部102的底邊的掃描方向長度可利用原子力顯微鏡(AFM)、探針式表面形狀測定器等膜表面形狀計測裝置20來測定。具體而言，以與所假定的重疊次數相應的對於結晶化而言最佳的能量密度來照射雷射脈衝，並測定藉由光束的短軸方向端部的照射而形成的凸起部的底邊長度。對於測定而言，可預先作為基準來進行，且亦可在經處理的矽膜中進行測定。 The length of the bottom side of the convex portion 102 in the scanning direction can be measured by a film surface shape measuring device 20 such as an atomic force microscope (AFM) or a probe-type surface shape measuring device. Specifically, the laser pulse is irradiated with the optimal energy density for crystallization according to the assumed number of overlaps, and the bottom of the convex portion formed by the irradiation of the end portion in the short axis direction of the light beam is measured Edge length. For the measurement, it can be performed as a reference in advance, and the measurement can also be performed in the processed silicon film.
在預先進行測定時，亦可藉由一次照射(one shot)脈衝雷射而作為掃描方向長度進行測定。若獲得凸起部的底邊長度，則可決定掃描間距，藉由掃描間距的決定而在規定的光束形狀中規定照射次數。該照射次數中的最佳的能量密度有時與測定凸起部102的底邊長度時的能量密度不同。該情況下，若根據照射次數的變更而最佳的能量密度發生變化，則可在變更後的最佳的能量密度中，測定凸起部102的底邊的掃描方向長度，並根據其結果來決定掃描間距。 When the measurement is performed in advance, it can also be measured as a length in the scanning direction by one shot pulse laser. If the length of the bottom of the convex portion is obtained, the scanning pitch can be determined, and the number of irradiations can be specified in a predetermined beam shape by the determination of the scanning pitch. The optimum energy density among the number of irradiations may be different from the energy density when measuring the length of the bottom of the protrusion 102. In this case, if the optimal energy density changes according to the change in the number of irradiations, the length of the bottom side of the convex portion 102 in the scanning direction can be measured at the changed optimal energy density and based on the result Determine the scanning pitch.
適當的掃描間距的結果為，凸起部102如圖3所示般彼此接近地形成，凸起部102間的高低差減小。藉此，即便發生雷射的能量變動、線形光束短軸形狀的變化、相對於雷射光束而相對移動的半導體膜的位置的紊亂等，亦可減輕其影響。 As a result of an appropriate scanning pitch, the convex portions 102 are formed close to each other as shown in FIG. 3, and the height difference between the convex portions 102 is reduced. This can reduce the influence of laser energy changes, linear beam short-axis shape changes, and positional disturbance of the semiconductor film relative to the laser beam.
[實施例1] [Example 1]
其次，進行使用實施方式所示的雷射處理裝置進行評估的試驗。試驗條件為以下所示。 Next, an evaluation test using the laser processing apparatus shown in the embodiment was performed. The test conditions are shown below.
a-Si(非單晶半導體)膜厚：50nm a-Si (non-single crystal semiconductor) film thickness: 50nm
脈衝振盪雷射光源 LSX315C(相干(Coherent)公司製造)/波長308nm，重複頻率300Hz Pulse oscillating laser light source LSX315C (made by Coherent)/wavelength 308nm, repetition frequency 300Hz
光束尺寸 370mm×0.4mm Beam size 370mm×0.4mm
雷射脈衝半寬值 50ns Laser pulse half width 50ns
照射能量密度 結晶化最佳能量密度：370mJ/cm2(半導體膜上) Irradiation energy density Crystallization optimal energy density: 370mJ/cm 2 (on semiconductor film)
凸起部底邊長度b 18μm(一次照射測定) The length of the bottom of the convex part b 18μm (one-time irradiation measurement)
掃描間距p 15μm、10μm、5μm(15μm為比較例) Scanning pitch p 15μm, 10μm, 5μm (15μm is a comparative example)
凸起部底邊長度測定裝置精工電子奈米科技(SII NanoTechnology)股份有限公司製造 掃描型探針顯微鏡單元商品名「S-image」 Bottom length measurement device of the convex part manufactured by SII NanoTechnology Co., Ltd. Scanning probe microscope unit trade name "S-image"
在上述條件下照射脈衝雷射，對所獲得的多晶矽中的照射不均進行評估。照射不均按照以下的基準來進行評估。 The pulsed laser was irradiated under the above conditions, and the unevenness of irradiation in the obtained polysilicon was evaluated. Irradiation unevenness was evaluated according to the following criteria.
對結晶矽膜的多個部位照射檢查光，分別接收反射光而獲取彩色圖像，對彩色圖像的色成分進行檢測，根據所檢測的色成分將彩色圖像單色化。然後，將經單色化的圖像的資料卷積而獲取加強了圖像濃淡的圖像資料，對加強了圖像濃淡的圖像資料進行投影轉換，根據經投影轉換的圖像資料來評估表面不均。單色化可使用經檢測的色成分中的主要色成分來進行，主要色成分可設為光分佈比其他色成分相對較大的色成分。 A plurality of parts of the crystalline silicon film are irradiated with inspection light, respectively receive reflected light to obtain a color image, detect color components of the color image, and monochromize the color image according to the detected color components. Then, convolve the monochromatic image data to obtain image data with enhanced image density, perform projection conversion on the image data with enhanced image density, and evaluate based on the projected image data Uneven surface. Monochromization can be performed using the main color component among the detected color components, and the main color component can be set to a color component whose light distribution is relatively larger than other color components.
單色化的圖像資料由將雷射的光束方向設為行、雷射的掃描方向設為列的矩陣資料來表示，藉由將規定係數的矩陣乘以經單色化的圖像的資料的矩陣來進行卷積。 Monochromatic image data is represented by matrix data that sets the direction of the laser beam to rows and the scanning direction of the laser to columns, by multiplying the matrix of specified coefficients by the data of the monochromated image To perform convolution.
規定係數的矩陣中分別使用加強光束方向的圖像資料及加強掃描方向的圖像資料，而分別獲取加強了光束方向的圖像濃淡的圖像資料及加強了掃描方向的圖像濃淡的圖像資料。 The matrix of prescribed coefficients uses image data with enhanced beam direction and image data with enhanced scanning direction, respectively, and obtains image data with enhanced image density in the beam direction and image with enhanced image density in the scanning direction. data.
具體而言進行以下的卷積。另外，規定係數的矩陣不限定於下述。 Specifically, the following convolution is performed. In addition, the matrix defining the coefficient is not limited to the following.
對於加強了圖像的濃淡的圖像資料，利用掃描方向、照射方向上出現大量條紋，而分別求出各個方向的投影。 For the image data that enhances the density of the image, a large number of stripes appear in the scanning direction and the irradiation direction, and the projections in each direction are separately obtained.
具體而言，藉由下述所示的式而在照射方向、掃描方向上分別進行投影轉換。 Specifically, projection conversion is performed in the irradiation direction and the scanning direction by the following formula.
照射方向=(Max(Σf(x)/Nx)-Min(Σf(x)/Nx))/平均 掃描方向=(Max(Σf(y)/Ny)-Min(Σf(y)/Ny))/平均 Irradiation direction=(Max(Σf(x)/Nx)-Min(Σf(x)/Nx))/average Scanning direction = (Max(Σf(y)/Ny)-Min(Σf(y)/Ny))/average
其中，x表示照射方向的圖像的位置，y表示掃描方向的圖像的位置，f(x)表示x位置的圖像資料，f(y)表示y位置的圖像資料，Nx表示照射方向的圖像的數量，Ny表示掃描方向的圖像的數量。 Where x represents the position of the image in the irradiation direction, y represents the position of the image in the scanning direction, f(x) represents the image data at the x position, f(y) represents the image data at the y position, and Nx represents the irradiation direction The number of images, Ny represents the number of images in the scanning direction.
因投影為各個方向上的總和，故雜訊強，而隨機值相抵消。亦即，照射不均可藉由計算出照射方向的投影的差而作為數值來表示。照射不均強的圖像的照射方向的投影的差增大，照射不均弱的圖像的投影的差減小。同樣地，掃描不均可藉由計算掃描方向的投影的差而作為數值來表示。掃描不均多的圖像的掃描方向的投影的差增大，掃描不均弱的圖像的投影的差減小。這樣，可基於投影的差，將照射不均與掃描不均加以數值化。 Because the projection is the sum of all directions, the noise is strong and the random values cancel out. That is, the irradiation irrelevance is expressed as a numerical value by calculating the difference in the projection of the irradiation direction. The difference in the projection direction of the image in which the uneven illumination is strong increases, and the difference in the projection of the image in which the uneven illumination is weak decreases. Similarly, scan failures can be expressed as numerical values by calculating the difference in projection in the scan direction. The difference in projection in the scanning direction of an image with many scan unevenness increases, and the difference in projection of an image with weak scan unevenness decreases. In this way, it is possible to quantify the unevenness of illumination and the unevenness of scanning based on the difference in projection.
圖4表示將改變掃描間距進行試驗的情況下的照射不均加以數值化所得的曲線圖。 FIG. 4 shows a graph obtained by quantifying the unevenness of irradiation when the test is performed by changing the scanning pitch.
比較例中，照射不均的程度為0.22~0.27的指標。 In the comparative example, the degree of uneven irradiation was an index of 0.22 to 0.27.
另一方面，掃描間距10μm、5μm滿足本發明的條件式(1)，掃描間距10μm時照射不均為0.13~0.18的指標，掃描間距5μm時照射不均為0.081~0.11的指標，照射不均明顯得到緩和。 On the other hand, the scanning pitches of 10 μm and 5 μm satisfy the conditional expression (1) of the present invention. When the scanning pitch is 10 μm, the irradiation unevenness is 0.13 to 0.18. When the scanning pitch is 5 μm, the irradiation unevenness is 0.081 to 0.11. The irradiation is uneven. Obviously eased.
圖5的圖式代用照片(倍率6倍)表示上述評估中加強了濃淡的畫面。可知在掃描間距為15μm的比較例中，不均顯眼，與此相對，掃描間距為10μm、5μm時，不均減少。 The graphical surrogate photograph of FIG. 5 (magnification 6 times) shows a screen in which the shades are enhanced in the above evaluation. It can be seen that in the comparative example in which the scanning pitch is 15 μm, unevenness is conspicuous. On the other hand, when the scanning pitch is 10 μm and 5 μm, the unevenness decreases.
以上，根據上述實施方式對本發明進行了說明，本發明並不限定於上述實施方式的內容，只要不脫離本發明的範圍則可進行適當的變更。 As described above, the present invention has been described based on the above-mentioned embodiments. The present invention is not limited to the contents of the above-mentioned embodiments, and can be appropriately changed as long as it does not depart from the scope of the present invention.
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| CN1137171A (en) * | 1995-02-02 | 1996-12-04 | 株式会社半导体能源研究所 | Laser annealing method |
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| JPS62130510A (en) * | 1985-12-02 | 1987-06-12 | Agency Of Ind Science & Technol | Manufacture of semiconductor substrate |
| JP2748377B2 (en) * | 1987-11-12 | 1998-05-06 | 富士通株式会社 | Laser recrystallization with multiple beams |
| JP4357006B2 (en) * | 1995-08-03 | 2009-11-04 | 東芝モバイルディスプレイ株式会社 | Method for forming polycrystalline semiconductor thin film and method for manufacturing thin film transistor |
| JPH09321311A (en) * | 1996-05-24 | 1997-12-12 | Sony Corp | Manufacture of thin film semiconductor device |
| JPH1074697A (en) * | 1996-08-29 | 1998-03-17 | Toshiba Corp | Polycrystalline silicon film, manufacture thereof, manufacture of thin film transistor and liquid crystal display device, and laser annealing device |
| JP2002083769A (en) * | 2000-09-05 | 2002-03-22 | Sony Corp | Semiconductor film, and method of manfuacturing semiconductor film |
| JP2005040806A (en) * | 2003-07-24 | 2005-02-17 | Daihen Corp | Laser beam irradiation arc welding method for galvanized steel sheet |
| US8927898B2 (en) * | 2006-05-01 | 2015-01-06 | Tcz, Llc | Systems and method for optimization of laser beam spatial intensity profile |
| JP4919717B2 (en) * | 2006-07-07 | 2012-04-18 | 三菱電機株式会社 | Method for manufacturing polycrystalline silicon film |
| US20080030877A1 (en) * | 2006-08-07 | 2008-02-07 | Tcz Gmbh | Systems and methods for optimizing the crystallization of amorphous silicon |
| JP2008311494A (en) * | 2007-06-15 | 2008-12-25 | Sharp Corp | Manufacturing method of crystalline semiconductor film, and laser device |
| JP2013510443A (en) * | 2009-11-03 | 2013-03-21 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | System and method for partial dissolution membrane treatment with non-periodic pulses |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1137171A (en) * | 1995-02-02 | 1996-12-04 | 株式会社半导体能源研究所 | Laser annealing method |
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| SG11201503919QA (en) | 2015-06-29 |
| JP5788855B2 (en) | 2015-10-07 |
| TW201424903A (en) | 2014-07-01 |
| JP2014103248A (en) | 2014-06-05 |
| WO2014080728A1 (en) | 2014-05-30 |
| CN104838472B (en) | 2018-03-20 |
| KR20150087196A (en) | 2015-07-29 |
| CN104838472A (en) | 2015-08-12 |
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