TWI600100B - 將晶片接合於一基板之壓力傳遞裝置 - Google Patents

將晶片接合於一基板之壓力傳遞裝置 Download PDF

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TWI600100B
TWI600100B TW102107118A TW102107118A TWI600100B TW I600100 B TWI600100 B TW I600100B TW 102107118 A TW102107118 A TW 102107118A TW 102107118 A TW102107118 A TW 102107118A TW I600100 B TWI600100 B TW I600100B
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pressure
substrate
wafers
bonding
transmitting device
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TW201351531A (zh
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馬克斯 威普林格
阿法瑞德 席格
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Ｅｖ集團Ｅ塔那有限公司
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Description

將晶片接合於一基板之壓力傳遞裝置
本發明係關於一種如技術方案1之用於將複數個晶片接合於一基板之壓力傳遞裝置及一種如技術方案8之用於將複數個晶片接合於一基板之接合器件。
在半導體業內，存在將不同功能單元彼此連接(尤其接合)之數種可能性。此等可能性中之一者係晶片至晶圓(C2W)方法，其中將個別晶片個別地接合於一基板。另一重要方法係所謂的「進階晶片至晶圓」(AC2W)方法，其中首先實驗性地(暫時地)將晶片連結於基板且一永久連接在一個接合步驟中發生，同時將所有晶片永久地接合於基板。在接合步驟中，將晶片及基板加熱，同時將晶片按壓至基板上(接合力)。
前述壓力及加熱程序使得尤其針對變得越來越小之結構成為技術問題，舉例而言由於在加熱期間之熱膨脹。
因此，本發明之目的係設想出一種壓力傳遞裝置及一種接合器件，藉此可最佳化前述方法且在接合期間最小化產品報廢。
藉助技術方案1及技術方案8之特徵達成此目的。在附屬請求項中給出本發明之有利發展。說明書、申請專利範圍及/或圖中所給出之特徵中之至少兩者之所有組合亦歸屬於本發明之範疇內。在既定值範圍，在所指示之限制內之值亦將被視為揭示為邊界值且將以任何組合予以主張。
本發明之基本理念係組態一壓力傳遞裝置用於將複數個晶片接合於一基板以使得其經製作以允許壓力主體橫向於接合方向B之一滑動運動。但若存在用於限制橫向於接合方向B之滑動運動之限制構件(尤其呈用於沿接合方向B將壓力傳遞裝置固定於一固持主體上之固定構件之形式)，則其係有利的。本發明與其中暫時地將晶片連結於基板且然後在一接合程序中使用壓力傳遞裝置接合之一AC2W方法一起使用尤其有利。如本發明中所主張，若在壓力傳遞之前至少大部分完成加熱至接合溫度之程序，則此處係有利的。以此方式，壓力主體可比藉助沿接合方向B之一毗鄰接合力更自由地橫向於接合方向B滑動。
基板尤其係一半導體，較佳地係一晶圓。
本發明在很大程度上解決在接合期間發生在壓力傳遞裝置與晶片表面之間之熱應力的技術問題，此乃因僅壓力主體自身之應力係相關的，此乃因如本發明中所主張其至少大部分地藉由滑動層與橫向於接合方向B之滑動層之另一側上之所有組件脫離。滑動層因此允許與其界接的組件幾乎完全無摩擦地相對運動。如本發明中所主張，尤其將滑動層製作為一較佳主要含碳固體。其基面經對準至少在很大程度上垂直於接合方向B之石墨經挑選作為該材料。
根據本發明之一項有利實施例，提供固定構件經製作橫向於接合方向B具有彈性。因此，同時，該固定構件可提供沿接合方向B將壓力傳遞裝置固持在一起，同時允許壓力主體橫向於接合方向B之滑動運動。同時，固定構件可以此方式充當上文所闡述之限制構件且因此可承擔如本發明中所主張之數種功能。
此處，若固定構件經製作為夾具以用於沿固持主體之方向夾緊一壓力主體，尤其是在之間定位有滑動層的情況下，則其係尤其有利的。此組態可以一節省空間之方式尤其容易地實施且執行前述之多種 功能。
在本發明之一項發展中，提供壓力主體尤其關於材料及/或尺寸經選擇以使得其熱膨脹性質至少沿至接合方向B之橫向方向對應於產品基板之熱膨脹性質。材料較佳地為基板及/或晶片之材料。如本發明中所主張，若壓力主體之尺寸基本上與基板之尺寸一致，尤其橫向於接合方向B，則其係尤其有利的。熱膨脹性質尤其包括壓力主體及/或基板及/或晶片之熱膨脹係數。特定而言，但非排他性地，可使用諸如金屬、陶瓷、塑膠或複合材料之材料種類，特定而言Si、CTE匹配玻璃(因此其熱膨脹係數已經對準於產品基板之彼熱膨脹係數之玻璃)、低CTE金屬等。亦已知CTE匹配玻璃及低CTE金屬。主要地，其導熱性極高之材料較佳。矽之熱膨脹係數舉例而言係2.6.10-6K-1。產品基板與如本發明中所主張之實施例之熱膨脹係數之差之絕對量小於100.10-6K-1，較佳地小於10.10-6K-1，更佳地小於1.10-6K-1，最佳地小於0.1.10-6K-1，尤為最佳地小於0.01.10-6K-1，最理想地為0K-1。
藉由存在至少沿接合方向B具有彈性且尤其在晶片之中間空間上至少部分地中斷以用於壓力補償之一層，壓力傳遞裝置亦補償沿接合方向B之膨脹、應力及高度差以使得能夠達成均勻壓力施加。彈性層因此用作一補償層。特定而言，彈性層具有在1MPa與100GPa之間的一彈性模數，較佳地在1MPa與10GPa之間，甚至更佳地在1MPa與1GPa之間。較佳之材料為聚合物。將具有大致1MPa之一有效各向同性彈性模數之橡膠用作彈性模數之比較值。纖維補強聚合物較佳為沿纖維之縱向軸具有大致100GPa之一有效彈性模數。其標記彈性材料之上限。
在本發明之另一有利實施例中，提供在壓力主體與晶片之間存在一硬層，該硬層尤其在晶片之中間空間上至少部分地中斷以用於至晶片之直接壓力傳遞。硬層比彈性層具有一較大彈性模數(尤其兩倍 大)，將硬層用作一保護層。特定而言，硬層亦用以形成一平面表面，尤其具有小於10μm之一平均表面粗糙度，較佳地小於1μm，甚至更佳地小於100nm，最佳地小於10nm。硬層較佳地經製作為一超硬層。較佳之材料為金屬及陶瓷，尤其鐵材料、非鐵金屬、硬金屬、氮化物層、碳化物層、硼化物層及氧化物陶瓷。沿接合方向B之硬層之厚度小於10mm、更佳地小於5mm、甚至更佳地小於2mm、最佳地小於500μm、尤為最佳地小於100μm。
有利地，根據另一實施例，提供壓力主體具有位於第一壓力側之周邊上尤其呈一較佳環形偏移形式之固定位點。以此方式，壓力主體在固持主體上之空間節省固定成為可能，由於在接合期間自固持主體至欲接合之晶片之可能熱轉移，因此沿接合方向B儘可能薄之壓力傳遞裝置之一組態係有利的。
如本發明中所主張，壓力傳遞裝置之所闡述特徵類似地應用於接合器件。
在圖中以相同元件符號識別相同或等效組件。
圖1展示具有一外殼11之一接合器件之一示意性及高度簡化表示，該外殼11環繞一接合室16且可經由一開口裝載及卸載外殼，該開口未展示且可用一門(未展示)關閉。在接合室16中，可設定針對其可存在對應進料管線及排放管線或加熱構件之一經定義氛圍及溫度。尤其將固持主體9及/或接收器10用作加熱構件。
在接合室16之底面上，存在用於容納一產品基板14之一接收器10，且產品基板之固定可尤其藉由真空路徑、機械夾緊或藉由靜電而發生。
產品基板14由擱置於接收器10上且固定於後者上之一基板12及暫時固定於基板12上且接合器件意欲用於其永久固定之晶片13組成。
在接收器10上方存在一固持主體9，固持主體9能夠相對於接收器10具體而言沿一個X方向、一個Y方向及一個Z方向移動。固持主體9較佳地亦可圍繞X、Y及/或Z軸轉動以便補償楔形故障(wedge fault)或改良表面至彼此之定向。較佳地，相對運動因固持主體9之移動而發生，而接收器10係剛性的或不具有任何自由度。
在將產品基板14裝載至接合室16中且將一壓力傳遞裝置1附接至固持主體9之一下部側9u之後，將壓力傳遞裝置1相對於產品基板14對準且降低直至壓力傳遞裝置1使其與產品基板14相對之側1u貼近且藉由對沿接合方向B之移動之一對應控制將一經定義接合力施加至晶片13之晶片表面13o為止。同時或隨後將產品基板14加熱至一接合溫度。程序由一控制裝置控制。
圖2a詳細說明壓力傳遞裝置1及產品基板14，出於表示之目的，使所圖解說明部分之關係為高度示意性，且尤其晶片13並不對應於真實情形。
在根據圖2a之第一所圖解說明之實施例中，除所有實施例均具有之一壓力主體2之外，壓力傳遞裝置1亦另外具有經由呈數個夾具之形式之一固定構件8夾緊至壓力主體2之一固持主體4，該數個夾具已夾持在壓力主體2及固持主體4之周邊上。
在壓力主體2與固持主體4之間存在一滑動層3，尤其在整個表面上方，藉此使得能夠達成壓力主體2橫向於接合方向B滑動運動。
壓力主體2具有橫向於接合方向B延續之一第一壓力側2o及一相對第二壓力側2f。壓力主體2及固持主體4尤其經製作成鏡像(反映在滑動層3上)。
壓力傳遞裝置1藉由固定構件8(尤其模製於夾具上之臂8a)固定於接合器件之固持主體9上。另一選擇係或另外，固持主體4還可藉由真空路徑固定於固持主體9上。
固定構件8具有一U形區段8u，在該U形區段8u之臂之間壓力主體2至固持主體4之夾緊發生。因此，U形區段8u環繞壓力主體2及固持主體4之周邊之一部分。為嚙合U形區段8u，在第一壓力側2o上之壓力主體2上存在固定位點17，尤其在壓力主體2之周邊上呈一尤其較佳環形偏移形式。橫向於接合方向B在固定位點處存在遊隙18以使得能夠達成壓力主體2橫向於接合方向B之一滑動運動。
U形區段8u之相對臂嚙合固持主體4之一對應固定位點，較佳地此處存在無遊隙固定。
在背離滑動層3之壓力主體2之第一壓力側2o上附接壓力元件5，具體而言在沿著X及Y方向(因此沿著第一壓力側2o)對應於基板12上之晶片13之位置處。壓力元件5由一彈性層6(其對應於晶片13之間的中間空間15而中斷)及一硬層7(已施加至彈性層6)組成。硬層同樣地在中間空間15之區域中類似於彈性層6而中斷以使得當施加壓力至 晶片13時最小化橫向於接合方向延續之任何側力。
當以壓力表面1u將壓力施加至晶片13時，此處在硬層7之一表面7o上，壓力元件5之重心5s中心對準於個別晶片13之重心13s。由於壓力主體2及基板12之類似或相同之熱膨脹係數且由於壓力主體2橫向於接合方向B之基本上無摩擦相對運動使得未導致橫向位移及橫向力，因此壓力元件5準確地跟隨晶片13。
圖2b中存在一經簡化固定構件8'，其中藉由一經修改固定構件8'固定壓力主體2及固持主體4'，該經修改固定構件8'排他性地固定在壓力主體2之固定位點處但不在固持主體4'上以使得固定沿接合方向B發生在壓力主體2與固持主體9之間。在具有遊隙18之情況下壓力主體2與滑動層3之運動學為圖2a中之運動學。因此，形成在一較簡單執行中之一經變更壓力傳遞裝置1'，此乃因固定構件8'及固持主體4'經製作而較簡單。
在圖2c之實施例中，省略固持主體4且將滑動層3直接提供在壓力主體2與固持主體9之間。形成一經變更壓力傳遞裝置1"，其經製作比上文所闡述之壓力傳遞裝置1、1'簡單，此乃因可省略一固持主體4、4'且壓力傳遞裝置1"可經製作而較薄且更好地轉移熱，就熱由固持主體9產生而言。
相反地，在圖3a中所展示之實施例中，省略圖2a至圖2c中所展示之壓力元件5以使得壓力主體2之第一壓力側2o承擔硬層7之功能。在壓力主體2與固持主體4之間存在一彈性層6'。在彈性層6'與壓力主體2之間的界面上存在滑動層3，而固定構件8對應於來自圖2a之固定構件8。因此，壓力傳遞裝置1'''之一經變更實施例出現。
在此實施例中，第一壓力側2o充當藉助其將壓力施加至晶片13之表面13o之一壓力表面1u'。
在圖3b中所展示之實施例中，根據圖2b中所展示之實施例存在 省略與固持主體4'之嚙合之固定構件8'。因此，壓力傳遞裝置1''''之一經變更實施例出現。
在圖3c中所展示之壓力傳遞裝置1'''''之執行中，根據圖2c中所闡述之執行省略固持主體4、4'。因此，使用類似於固定構件8"之固定構件。
1、1'、1"、1'''、1''''‧‧‧壓力傳遞裝置
1u、1u'‧‧‧壓力表面
2‧‧‧壓力主體
2o‧‧‧第一壓力側
2f‧‧‧第二壓力側
3‧‧‧滑動層
4、4'‧‧‧固持主體
5‧‧‧壓力元件
5s‧‧‧重心
6、6'‧‧‧彈性層
7‧‧‧硬層
7o‧‧‧表面
8、8'、8"‧‧‧固定構件
8a‧‧‧臂
8u‧‧‧U形區段
9‧‧‧固持主體
9u‧‧‧下部側
10‧‧‧接收器
11‧‧‧外殼
12‧‧‧基板
13‧‧‧晶片
13o‧‧‧晶片表面
13s‧‧‧重心
14‧‧‧產品基板
15‧‧‧中間空間
16‧‧‧接合室
17‧‧‧固定位點
18‧‧‧遊隙
B‧‧‧接合方向
自對較佳例示性實施例之以下說明及使用圖式將明瞭本發明之其他優點、特徵及細節。
圖1展示如本發明中所主張之接合器件之一示意性側視圖，圖2a展示一第一實施例中如本發明中所主張之接合器件之一示意性細節圖，圖2b展示如本發明中所主張之壓力傳遞裝置之另一實施例之一示意性正視圖，圖2c展示另一實施例中如本發明中所主張之壓力傳遞裝置之一示意性側視圖，圖3a展示如本發明中所主張之接合器件之另一實施例之一示意性細節圖， 圖3b展示另一實施例中如本發明中所主張之壓力傳遞裝置之一示意性側視圖，及圖3c展示另一實施例中如本發明中所主張之壓力傳遞裝置之一示意性側視圖。
1‧‧‧壓力傳遞裝置
1u‧‧‧壓力表面
2‧‧‧壓力主體
2o‧‧‧第一壓力側
3‧‧‧滑動層
4‧‧‧固持主體
5‧‧‧壓力元件
5s‧‧‧重心
6‧‧‧彈性層
7‧‧‧硬層
7o‧‧‧表面
8‧‧‧固定構件
8a‧‧‧臂
8u‧‧‧U形區段
9‧‧‧固持主體
10‧‧‧接收器
12‧‧‧基板
13‧‧‧晶片
13o‧‧‧晶片表面
13s‧‧‧重心
14‧‧‧產品基板
15‧‧‧中間空間
17‧‧‧固定位點
18‧‧‧遊隙

Claims (10)

  1. 一種將複數個晶片接合於一基板之壓力傳遞裝置，該壓力傳遞裝置包括：一壓力主體，其用於沿一接合方向(B)將一接合力施加至該複數個晶片，該壓力主體具有一第一壓力側及相對一第二壓力側，該第一壓力側及該第二壓力側定向於橫向該接合方向(B)之一方向，固定構件，其附接至該壓力主體之一周邊以用於將該壓力主體固定於一固持主體，該等固定構件1)經製作橫向於該接合方向(B)之該方向具有彈性，及/或2)經製作為夾具以用於夾緊該壓力主體於該固持主體，及一滑動層，其佈置於該壓力主體與該固持主體之間以用於允許該壓力主體橫向於該接合方向(B)之該方向滑動。
  2. 如請求項1之壓力傳遞裝置，進一步包括一層，該層至少沿該接合方向(B)具有彈性且至少在該複數個晶片之中間空間上中斷以用於壓力補償。
  3. 如請求項1之壓力傳遞裝置，其中在該壓力主體與該複數個晶片之間存在一硬層，該硬層在該複數個晶片之中間空間上中斷以用於直接壓力傳遞至該複數個晶片。
  4. 如請求項1、2或3之壓力傳遞裝置，其中該壓力主體具有位於該第一壓力側之一周邊上尤其呈一較佳環形偏移形式之固定位點。
  5. 一種將複數個晶片接合於一基板之接合器件，其包括：如請求項1、2或3之一壓力傳遞裝置，一接收器，其用於容納該基板， 一加熱構件，其用於加熱該複數個晶片及該基板，及一驅動構件，其用於藉由該固持主體沿該接合方向(B)之移動來施加該接合力。
  6. 一種以如請求項1之一壓力傳遞裝置用於將複數個晶片接合於一基板上之方法。
  7. 如請求項6之方法，其中該壓力主體尤其關於材料及/或尺寸經選擇以使得其熱膨脹性質至少沿橫向於該接合方向(B)之該方向對應於該基板之熱膨脹性質。
  8. 一種用於將複數個晶片接合於一基板之一裝置，該裝置具有一固持主體可沿一接合方向(B)移動及如請求項1之一壓力傳遞裝置。
  9. 一種以如請求項5之一接合器件用於將複數個晶片接合於一基板上之方法。
  10. 如請求項9之方法，其中該壓力主體尤其關於材料及/或尺寸經選擇以使得其熱膨脹性質至少沿橫向於該接合方向(B)之該方向對應於該基板之熱膨脹性質。
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Publication number Priority date Publication date Assignee Title
US6337509B2 (en) * 1998-07-16 2002-01-08 International Business Machines Corporation Fixture for attaching a conformal chip carrier to a flip chip
DE10140133A1 (de) * 2001-08-16 2003-03-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Herstellen einer klebenden Verbindung zwischen einer Halbleiterscheibe und einer Trägerplatte
JP3767812B2 (ja) 2002-07-11 2006-04-19 三菱電機株式会社 電子部品製造装置および電子部品製造方法
JP4696110B2 (ja) * 2005-03-17 2011-06-08 パナソニック株式会社 電子部品の実装方法及び電子部品実装装置
US20060292823A1 (en) * 2005-06-28 2006-12-28 Shriram Ramanathan Method and apparatus for bonding wafers
JP4925669B2 (ja) * 2006-01-13 2012-05-09 ソニーケミカル＆インフォメーションデバイス株式会社 圧着装置及び実装方法
WO2007142802A2 (en) 2006-05-23 2007-12-13 Vladimir Vaganov Method of wafer-to-wafer bonding
JP2009123577A (ja) 2007-11-16 2009-06-04 Ulvac Japan Ltd 基板加熱装置
JP2011009357A (ja) * 2009-06-24 2011-01-13 Fujitsu Ltd 実装装置
JP2011253940A (ja) * 2010-06-02 2011-12-15 Sony Chemical & Information Device Corp ウエハのダイシング方法、接続方法及び接続構造体

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EP2826064A1 (de) 2015-01-21
CN104303281A (zh) 2015-01-21
EP2826064B1 (de) 2015-10-21
JP5883510B2 (ja) 2016-03-15
JP2014534636A (ja) 2014-12-18
US9305813B2 (en) 2016-04-05
WO2013135302A1 (de) 2013-09-19
TW201351531A (zh) 2013-12-16
CN104303281B (zh) 2017-03-08

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