TW202325536A - 靜電夾盤 - Google Patents

靜電夾盤 Download PDF

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TW202325536A
TW202325536A TW111142344A TW111142344A TW202325536A TW 202325536 A TW202325536 A TW 202325536A TW 111142344 A TW111142344 A TW 111142344A TW 111142344 A TW111142344 A TW 111142344A TW 202325536 A TW202325536 A TW 202325536A
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adhesive
resin layer
electrostatic chuck
ceramic plate
temperature
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TW111142344A
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佐藤渓太
山田陽平
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日商新光電氣工業股份有限公司
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Publication of TW202325536A publication Critical patent/TW202325536A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B27/00—Layered products comprising a layer of synthetic resin
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    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
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    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/08—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
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    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
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    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/045—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/04—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving separate application of adhesive ingredients to the different surfaces to be joined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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Abstract

本發明揭示一種靜電夾盤，其包括：一底板；一陶瓷板，其固定至該底板且包括嵌入於該陶瓷板中之一電極；及一樹脂層，其接合該底板與該陶瓷板且包括一或多種黏合劑。在該一或多種黏合劑之至少一者中，於-150℃至250℃之溫度範圍中與一損耗正切之一極值對應的溫度係 -70℃或更低。

Description

靜電夾盤
本發明係關於一種靜電夾盤。
例如，當製造一半導體組件及諸如此類時，可使用經組態以吸附及固持一晶圓之一靜電夾盤(ESC)。該靜電夾盤具有一結構，在該結構中，其中嵌入有一電極之一陶瓷板藉由一樹脂層接合至一金屬底板。該靜電夾盤經組態以當一電壓施加至嵌入於該陶瓷板中之電極時藉由使用一靜電力將該晶圓吸附至該陶瓷板。
例如，作為形成樹脂層之一黏合劑，使用一撓性基於矽氧樹脂之黏合劑以便有利地維持導熱率且吸收底板與陶瓷板之間的熱膨脹之一差。 [引用列表] [專利文獻]
專利文獻1：JP2020-23088A
同時，例如，可在-60℃或更低之一低溫下執行使用一靜電夾盤製造一半導體組件。當在-60℃或更低之低溫下使用靜電夾盤時，靜電夾盤中之底板與陶瓷板之間的樹脂層之撓性可降低。此係由於一儲存彈性模數（其係表示形成樹脂層之黏合劑之硬度之一物理性質值）在-60℃附近快速增加且黏合劑經固化。當樹脂層之撓性在低溫下降低時，樹脂層未充分地放鬆由底板與陶瓷板之間的熱膨脹之一差產生之應力，且因此樹脂層可被毀壞。對樹脂層之破壞局部降低底板與陶瓷板之間經由樹脂層之一傳熱特性，且因此降低陶瓷板作為一吸附表面之一表面上之溫度均勻性。
本發明之一目的係提供能夠在低溫下抑制對一樹脂層破壞之一靜電夾盤。
根據本發明之一態樣，一靜電夾盤包括一底板、一陶瓷板及一樹脂層。該陶瓷板固定至該底板，且經組態以藉由因對一嵌入電極通電而產生之一靜電力來吸附一目標物件。該樹脂層係用於接合底板與陶瓷板之一樹脂層，且由一或多種經層壓黏合劑形成，且該一或多種黏合劑之至少一者具有在-150℃至250℃之溫度範圍中與一損耗正切之一極值對應之-70℃或更低的溫度。
根據本發明之靜電夾盤之一態樣，展現了能夠在低溫下抑制對樹脂層破壞之一效應。
在下文中，將參照圖式詳細闡述本發明之靜電夾盤之具體例。需注意所揭示技術不限於該等具體例。
(具體例) 圖1係根據一具體例展示一靜電夾盤100之一組態之一透視圖。圖1中展示之靜電夾盤100包括一底板110及一陶瓷板120。
例如，底板110係由諸如鋁之金屬製成之一圓形構件。底板110係靜電夾盤100之一基底構件。諸如冷卻水之一冷凍劑穿過之一冷凍劑通道形成於底板110中，以調整陶瓷板120及吸附至陶瓷板120之一晶圓或諸如此類之溫度。
陶瓷板120係由絕緣陶瓷製成之一圓形構件。陶瓷板120之一直徑小於底板110之一直徑，且陶瓷板120固定至底板110之一中心。亦即，陶瓷板120之一個表面用作接合至底板110之一黏合劑表面，且黏合劑表面藉由樹脂層接合至底板110，使得固定陶瓷板120。例如，在與陶瓷板120之黏合劑表面相對之一側上之一表面係用於吸附一目標物件(諸如待吸附之一晶圓)之一吸附表面。
一導電電極係配置在陶瓷板120中，藉由對該電極通電而產生一靜電力，且目標物件藉由該靜電力經吸附至陶瓷板120之吸附表面。
另外，一加熱器電極係配置在陶瓷板120中，且當通電時加熱器電極產生熱量，藉此調整陶瓷板120及目標物件(諸如待吸附至陶瓷板120之一晶圓)之溫度。
圖2係根據具體例展示靜電夾盤100之一剖面之一示意圖。在圖2中，展示沿著圖1中之一線II-II截取之一剖面。如圖2中所展示，靜電夾盤100藉由經由樹脂層130將陶瓷板120接合至底板110而組態。
例如，底板110係具有約20mm至50mm之一厚度之一金屬構件，在該底板中，形成作為諸如冷卻水和冷卻氣體之冷凍劑之一通道之一冷凍劑通道111。該冷凍劑穿過冷凍劑通道111，以冷卻陶瓷板120及吸附至陶瓷板120之晶圓。冷卻陶瓷板120，以冷卻目標物件(諸如吸附至陶瓷板120之一晶圓)。
例如，陶瓷板120係由陶瓷製成之一板，該陶瓷板具有約1mm至10 mm之一厚度且在其中包括一電極121及一加熱器電極122。例如，陶瓷係藉由燒製使用氧化鋁製作之一生坯片材而獲得。陶瓷板120之一下表面係待接合至底板110之一黏合劑表面，且藉由樹脂層130接合至底板110之一上表面。
當一電壓施加至陶瓷板120之電極121時，例如，陶瓷板120藉由一靜電力吸附諸如一晶圓之一目標物件。亦即，在圖2中，陶瓷板120之一上表面用作一吸附表面，且當一電壓施加至電極121時，將目標物件吸附至吸附表面。
另外，當一電壓施加至陶瓷板120之加熱器電極122時，加熱器電極122產生熱量，以將陶瓷板120加熱且將吸附至陶瓷板120之目標物件加熱。藉由加熱器電極122進行加熱及藉由底板110進行冷卻調整陶瓷板120之溫度且將吸附至陶瓷板120之目標物件之溫度調整至一期望溫度。
例如，可使用諸如鎢之一導體作為電極121及加熱器電極122。
例如，樹脂層130係由一基於矽氧樹脂之黏合劑形成且具有約0.05 mm至3.0mm之一厚度之一層，且將陶瓷板120之下表面接合至底板110之上表面。在形成樹脂層130之黏合劑中，與一損耗正切之一極值對應的溫度係-70℃或更低。圖3係展示形成樹脂層130之黏合劑之損耗正切之一量測結果之一曲線圖。圖3展示藉由對用作形成樹脂層130之黏合劑之一黏合劑A及一黏合劑B之每一試樣進行動態黏彈性量測(DMA)獲得之一量測結果。
圖3中所展示之量測結果之量測條件係如下。 量測裝置：DMA6100(由日立高科技公司(Hitachi High-Tech Corporation)生產) 量測溫度範圍：-150℃至250℃ 溫度增長率：5℃/min 量測模式：拉伸 量測頻率：1Hz 試樣形狀：矩形形狀 試樣尺寸：長度15mm×寬度15mm×厚度0.1mm至1mm 失真振幅：10μm
在DMA中，量測由以下式(1)表達之複彈性模數(G*)、儲存彈性模數(G')及損耗彈性模數(G")。 G*=G'+G"i … (1) 此處，儲存彈性模數(G')係表示黏彈性體之硬度之一值，且損耗彈性模數(G")係表示黏彈性體之黏度之一值。
另外，在DMA中，由以下式(2)表達之損耗正切tanδ係自儲存彈性模數(G')及損耗彈性模數(G")計算的。損耗正切tanδ係表示黏度對黏彈性體之一貢獻程度之一值。與損耗正切tanδ之極值對應之溫度亦稱為玻璃轉變溫度(Tg)。 tanδ=G"/G' … (2)
如圖3中所展示，自試樣獲得之量測數據展示：對於黏合劑A，與損耗正切tanδ之極值對應之溫度係-102.5℃，且對於黏合劑B，與損耗正切tanδ之極值對應之溫度係-118.5℃。亦即，可看出，形成樹脂層130之黏合劑(黏合劑A或黏合劑B)具有與損耗正切之極值對應的溫度，即，-70℃或更低之一玻璃轉變溫度(Tg)。
當樹脂層130之玻璃轉變溫度(Tg)高於-70℃時，例如，在-60℃或更低之一低溫下樹脂層130之撓性可降低。此係由於形成樹脂層130之黏合劑之儲存彈性模數(G')在-60℃附近快速增加且黏合劑經固化。當樹脂層130之撓性在低溫下降低時，樹脂層130未充分地放鬆由底板110與陶瓷板120之間的熱膨脹之一差產生之應力，且因此樹脂層130可被毀壞。樹脂層130之破壞局部降低底板110與陶瓷板120之間經由樹脂層130之傳熱特性，且因此降低陶瓷板120作為一吸附表面之表面上之溫度均勻性。
相比之下，樹脂層130係由具有在-150℃至250℃之溫度範圍中 -70℃或更低之一玻璃轉變溫度(Tg)的一黏合劑形成，使得即使當在 -60℃或更低之低溫下使用靜電夾盤100時，例如，樹脂層130維持有利之撓性。亦即，由於樹脂層130之玻璃轉變溫度(Tg)係-70℃或更低，因此在-60℃或更低之低溫下樹脂層130之儲存模數(G')維持在與在一室溫下之值相同之水準且抑制樹脂層130之固化。出於此原因，即使當在低溫下使用靜電夾盤100時，樹脂層130變形，且因此可充分地放鬆由底板110與陶瓷板120之間的熱膨脹之差產生之應力。藉此，可抑制在低溫下對樹脂層130之破壞，且因此，陶瓷板120之吸附表面上之溫度差變小，且靜電夾盤100可獲得充分高之溫度均勻性。形成樹脂層130之黏合劑之玻璃轉變溫度(Tg)更佳地係-100℃或更低。
此外，形成樹脂層130之黏合劑在-60℃下具有0.5W/mK或更大的導熱率。例如，圖3中所展示之黏合劑A在-60℃下具有2.16W/mK的導熱率，且黏合劑B在-60℃下具有1.12W/mK的導熱率。需注意導熱率係基於熱擴散率、比熱容及密度而計算的。例如，可藉由一種雷射閃光方法量測熱擴散率，例如，可藉由一種絕熱連續方法量測比熱容，且例如，可藉由一種液體稱重方法量測密度。
例如，若形成樹脂層130之黏合劑在-60℃下的導熱率小於0.5 W/mK，則降低樹脂層130在-60℃或更低之低溫下的導熱率。相比之下，藉由在-60℃下具有0.5W/mK或更大的導熱率之一黏合劑形成樹脂層130，樹脂層130在低溫下之導熱率之一降低可被抑制。形成樹脂層130之黏合劑在-60℃下之導熱率較佳地係1W/mK或更大。
另一方面，當樹脂層130之厚度較薄時，樹脂層130因接合不同材料引起之應力而無法充分地放鬆，此導致對樹脂層130之破壞。因此，本申請之發明人進行一實驗以研究形成樹脂層130之黏合劑之厚度、層之間的分層(分層)以及吸附表面上之溫度均勻性之間的一關係。此實驗之一結果係展示在圖4中。圖4圖解說明形成樹脂層130之黏合劑之厚度、分層及吸附表面上之溫度均勻性之間的關係之一實施例。需注意，例如，層之間的分層(分層)係指樹脂層130與陶瓷板120之間的分層。
在圖4中所展示之實驗中，形成樹脂層130之黏合劑之厚度設定為4種類型，進行在一預定溫度範圍中之一熱迴圈測試1000次迴圈，且關於吸附表面上存在或不存在分層發生及溫度差對在熱迴圈測試之後的靜電夾盤100進行評估。在此實驗中，形成樹脂層130之黏合劑之厚度設定為0.3mm、0.25mm、0.2mm及0.15mm之四種類型。另外，在此實驗中，熱迴圈測試中之溫度範圍設定為-40℃至60℃。
如圖4中所展示，當黏合劑之厚度係0.25mm或更大時，樹脂層130與陶瓷板120之間的分層不會發生。另外，當黏合劑之厚度係0.25mm或更大時，與黏合劑之厚度小於0.25mm之一情況相比較，陶瓷板120之吸附表面上之溫度差更小。亦即，可自圖4之結果看出，當形成樹脂層130之黏合劑之厚度係0.25mm或更大時，可抑制分層之發生且可維持吸附表面上之高溫度均勻性。因此，較佳係形成樹脂層130之黏合劑之厚度係0.25 mm或更大。
(經修改具體例) 需注意在以上具體例中，接合底板110與陶瓷板120之樹脂層130藉由一個層之黏合劑形成之情況已展示為一實施例。然而，接合層可藉由層壓複數個黏合劑而形成。亦即，接合層可由一或多種經層壓黏合劑形成。具體而言，例如圖5中所展示，在根據一第一經修改具體例之一靜電夾盤100A中，一樹脂層130A可藉由層壓一第一黏合劑131及一第二黏合劑132而形成。圖5係根據第一經修改具體例展示靜電夾盤100A之一剖面之一示意圖。第一黏合劑131施加至底板110。第二黏合劑132施加在第一黏合劑131與陶瓷板120之間。第一黏合劑131及第二黏合劑132各自具有與損耗正切之極值對應的溫度，即，在-150℃至250℃之溫度範圍中-70℃或更低之一玻璃轉變溫度(Tg)。第一黏合劑131之玻璃轉變溫度(Tg)與第二黏合劑132之玻璃轉變溫度(Tg)可相同或不同。以此方式，藉由施加第一黏合劑131及第二黏合劑132以形成樹脂層130A，促進樹脂層130A在一低溫下之變形且吸收在一水平方向上之位移，以可進一步抑制樹脂層130在低溫下之破壞。需注意樹脂層130可藉由層壓片狀第一黏合劑131及片狀第二黏合劑132而形成。
另外，當接合層由一或多種經層壓黏合劑形成時，一或多種黏合劑之至少一者可具有在-150℃至250℃之溫度範圍中與損耗正切之極值對應之-70℃或更低之一溫度。例如，僅針對形成接合層之一或多種黏合劑中之一者，在-150℃至250℃之溫度範圍中與損耗正切之極值對應之溫度可係-70℃或更低。在此情況中一經修改實施例展示在圖6中。圖6係根據一第二經修改具體例展示一靜電夾盤100B之一剖面之一示意圖。如圖6中所展示，在根據第二經修改具體例之靜電夾盤100B中，一樹脂層130B係藉由層壓一片狀第一黏合劑133及一片狀第二黏合劑132而形成。第一黏合劑133經層壓在底板110上。第二黏合劑132經層壓在第一黏合劑133與陶瓷板120之間。第一黏合劑133及第二黏合劑132具有在 -150℃至250℃之溫度範圍中與損耗正切之極值對應之-70℃或更低之一溫度。另一方面，在第一黏合劑133之情況下，與損耗正切之極值對應之溫度高於70℃。在此情況中，第一黏合劑133在熱固之前的黏度及在熱固之後的儲存彈性模數可大於第二黏合劑132之彼等。藉此，由於視情況維持第一黏合劑133之硬度，因此可藉由第一黏合劑133之厚度適當調整樹脂層130B之厚度。在圖6之實施例中，第一黏合劑133之厚度大於第二黏合劑132之厚度。例如，第一黏合劑133之厚度係約0mm至1mm，且第二黏合劑132之厚度係約0.05mm至0.5mm。
需注意在圖5及圖6之實施例中，樹脂層130A及130B係藉由層壓兩個層之黏合劑而形成。然而，樹脂層可藉由層壓三個或更多層之黏合劑而形成。
(其他經修改具體例) 需注意，在上文闡述之靜電夾盤100中，樹脂層130之導熱率可藉由在樹脂層130中含有諸如氧化鋁、碳化矽或氧化鋅之一填料而改良。另外，自藉由樹脂層130改良底板110與陶瓷板120之間的黏合性之一角度來看，可根據需要在樹脂層130之上表面及下表面上提供一矽烷耦合層。
如上文所闡述，根據具體例之靜電夾盤(例如，靜電夾盤100)包括一底板(例如，底板110)、一陶瓷板(例如，陶瓷板120)及一樹脂層(例如，一樹脂層130；130A；130B)。該陶瓷板固定至該底板，且經組態以藉由因對一嵌入電極通電而產生之一靜電力來吸附一目標物件。樹脂層係用於接合底板與陶瓷板之一樹脂層，且由一或多種經層壓黏合劑形成，且一或多種黏合劑之至少一者具有在-150℃至250℃之溫度範圍中與一損耗正切之一極值對應之-70℃或更低的溫度。藉此，根據具體例之靜電夾盤，在一低溫下抑制對樹脂層之破壞且因此獲得充分高之溫度均勻性係可能的。
另外，一或多種黏合劑之至少一者在-60℃下可具有0.5W/mK或更大的導熱率。藉此，根據具體例之靜電夾盤，抑制樹脂層在低溫下之導熱率之降低係可能的。
此外，一或多種黏合劑之至少一者可含有一填料。藉此，根據具體例之靜電夾盤，改良樹脂層之導熱率係可能的。
此外，樹脂層可包括施加至底板之一第一黏合劑(例如，第一黏合劑131；133)，及施加在第一黏合劑與陶瓷板之間的一第二黏合劑(例如，第二黏合劑132)。第一黏合劑及第二黏合劑之至少一者可具有在-150℃至250℃之溫度範圍中與損耗正切之極值對應之-70℃或更低之一溫度。藉此，根據具體例之靜電夾盤，促進樹脂層在低溫下之變形且吸收在一水平方向上之位移，使得可進一步抑制樹脂層在低溫下之破壞。
此外，第一黏合劑及第二黏合劑中之一者可具有在-150℃至250℃之溫度範圍中與損耗正切之極值對應之-70℃或更低之溫度。另外，第一黏合劑及第二黏合劑中之另一者在熱固之前的黏度及在熱固之後的儲存彈性模數可大於第一黏合劑及第二黏合劑中之一者。藉此，根據具體例之靜電夾盤，適當調整樹脂層之厚度係可能的。
此外，第一黏合劑及第二黏合劑中之另一者之厚度可大於第一黏合劑及第二黏合劑中之一者之厚度。藉此，根據具體例之靜電夾盤，適當調整樹脂層之厚度係可能的。
100:靜電夾盤 100A:靜電夾盤 100B:靜電夾盤 110:底板 111:冷凍劑通道 120:陶瓷板 121:電極 122:加熱器電極 130:樹脂層 130A:樹脂層 130B:樹脂層 131:第一黏合劑 132:第二黏合劑 133:第一黏合劑
圖1係根據一具體例展示一靜電夾盤之一組態之一透視圖。 圖2係根據具體例展示靜電夾盤之一剖面之一示意圖。 圖3係展示一黏合劑之一損耗正切之一量測結果之一曲線圖。 圖4圖解說明形成一樹脂層之一黏合劑之一厚度、分層及一吸附表面上之溫度均勻性之間的一關係之一實施例。 圖5係根據具體例之一第一經修改具體例展示一靜電夾盤之一剖面之一示意圖。 圖6係根據具體例之一第二經修改具體例展示一靜電夾盤之一剖面之一示意圖。
100:靜電夾盤
110:底板
111:冷凍劑通道
120:陶瓷板
121:電極
122:加熱器電極
130:樹脂層

Claims (6)

  1. 一種靜電夾盤，其包含： 一底板； 一陶瓷板，其固定至該底板且包括嵌入於該陶瓷板中之一電極；及 一樹脂層，其接合該底板與該陶瓷板且包括一或多種黏合劑， 其中在該一或多種黏合劑之至少一者中，於-150℃至250℃之溫度範圍中與一損耗正切之一極值對應的溫度係-70℃或更低。
  2. 如請求項1之靜電夾盤，其中，該一或多種黏合劑之該至少一者在-60℃下具有0.5W/mK或更高的導熱率。
  3. 如請求項1之靜電夾盤，其中，該一或多種黏合劑之該至少一者含有一填料。
  4. 如請求項1之靜電夾盤，其中，該樹脂層具有： 一第一黏合劑，其施加至該底板，及 一第二黏合劑，其施加在該第一黏合劑與該陶瓷板之間，且 其中在該第一黏合劑及該第二黏合劑之至少一者中，於-150℃至250℃之溫度範圍中與該損耗正切之該極值對應的溫度係-70℃或更低。
  5. 如請求項4之靜電夾盤，其中，在該第一黏合劑及該第二黏合劑中之一者中，於-150℃至250℃之溫度範圍中與該損耗正切之該極值對應的溫度係-70℃或更低，且 其中該第一黏合劑及該第二黏合劑中之另一者在熱固之前的黏度及在熱固之後的儲存彈性模數係大於該第一黏合劑及該第二黏合劑中之該一者。
  6. 如請求項5之靜電夾盤，其中，該第一黏合劑及該第二黏合劑中之另一者的厚度係大於該第一黏合劑及該第二黏合劑中之該一者的厚度。
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