CN116110841A - 静电吸盘 - Google Patents
静电吸盘 Download PDFInfo
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- CN116110841A CN116110841A CN202211397163.9A CN202211397163A CN116110841A CN 116110841 A CN116110841 A CN 116110841A CN 202211397163 A CN202211397163 A CN 202211397163A CN 116110841 A CN116110841 A CN 116110841A
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- 239000000853 adhesive Substances 0.000 claims abstract description 110
- 230000001070 adhesive effect Effects 0.000 claims abstract description 106
- 239000011347 resin Substances 0.000 claims abstract description 85
- 229920005989 resin Polymers 0.000 claims abstract description 85
- 239000000919 ceramic Substances 0.000 claims abstract description 69
- 239000011230 binding agent Substances 0.000 claims abstract description 10
- 238000013007 heat curing Methods 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 12
- 239000000945 filler Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 91
- 238000001179 sorption measurement Methods 0.000 description 13
- 230000032798 delamination Effects 0.000 description 9
- 230000009477 glass transition Effects 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
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- 238000010586 diagram Methods 0.000 description 6
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
本发明提供一种静电吸盘,包括:底板;陶瓷板,其固定到底板,并且包括埋入陶瓷板中的电极;以及树脂层,其使底板和陶瓷板结合,并且包括一种或多种粘合剂。在一种或多种粘合剂中的至少一种中,在‑150℃至250℃的温度范围内损耗角正切的极值对应的温度为‑70℃以下。
Description
技术领域
本发明涉及静电吸盘。
背景技术
例如,在制造半导体元件等时,可以使用吸附并保持晶片的静电吸盘(ESC)。静电吸盘具有其中埋入有电极的陶瓷板通过树脂层结合到金属底板的结构。静电吸盘构造为当电压被施加到埋入陶瓷板中的电极时通过使用静电力将晶片吸附到陶瓷板。
作为形成树脂层的粘合剂,例如,使用柔性硅树脂基粘合剂,以便有利地保持热导率并吸收底板和陶瓷板之间的热膨胀差异。
引文列表
专利文献
专利文献1:JP2020-23088A。
发明内容
与此同时,使用静电吸盘的半导体元件的制造可能在例如-60℃
以下的低温下进行。当在-60℃以下的低温下使用静电吸盘时,静电吸盘中底板和陶瓷板之间的树脂层的柔性可能降低。这是因为,作为表示形成树脂层的粘合剂的硬度的物理属性值的储能弹性模量在-60℃附近急剧增大,并且粘合剂被固化。当树脂层的柔性在低温下降低时,由底板和陶瓷板之间的热膨胀差异导致的应力不能通过树脂层充分地缓和,结果,树脂层可能被破坏。树脂层的破坏局部地降低了底板与陶瓷板之间经由树脂层的传热特性,结果,降低了作为吸附表面的陶瓷板的表面上的温度均匀性。
本公开的目的在于提供一种能够抑制树脂层在低温下被破坏的静电吸盘。
根据本发明的一个方面,静电吸盘包括底板、陶瓷板和树脂层。陶瓷板固定到底板,并且构造为通过由对埋入电极进行通电而产生的静电力来吸附目标对象。树脂层是用于使底板和陶瓷板结合的树脂层,并且由一种或多种层叠的粘合剂形成,并且一种或多种粘合剂中的至少一种在-150℃至250℃的温度范围内损耗角正切的极值对应的温度为-70℃以下。
根据本公开的静电吸盘的一个方面,表现出能够抑制树脂层在低温下被破坏的效果。
附图说明
图1是示出根据实施例的静电吸盘的构造的透视图。
图2是示出根据实施例的静电吸盘的截面的示意图。
图3是示出粘合剂的损耗角正切的测定结果的曲线图。
图4是示出了形成树脂层的粘合剂的厚度、脱层、吸附表面的温度均匀性的关系的一个示例。
图5是示出根据实施例的第一变型实施例的静电吸盘的截面的示意图。
图6是示出根据实施例的第二变型实施例的静电吸盘的截面的示意图。
具体实施方式
以下,将参照附图详细描述本公开的静电吸盘的各实施例。应注意的是,所公开的技术不限于这些实施例。
(实施例)
图1是示出根据实施例的静电吸盘100的构造的透视图。图1所示的静电吸盘100包括底板110和陶瓷板120。
底板110是由例如铝等金属制成的圆形构件。底板110是静电吸盘100的基底构件。在底板110中形成供诸如冷却水等制冷剂通过的制冷剂通道,从而调节陶瓷板120和吸附到陶瓷板120的晶片等的温度。
陶瓷板120是由绝缘陶瓷制成的圆形构件。陶瓷板120的直径小于底板110的直径,并且陶瓷板120固定到底板110的中央。即,陶瓷板120的一个表面用作结合到底板110的粘合表面,并且粘合表面通过树脂层结合到底板110,使得陶瓷板120被固定。陶瓷板120的与粘合表面相反侧的表面是例如用于吸附诸如要吸附的晶片等目标对象的吸附表面。
在陶瓷板120中布置有导电电极,通过对电极通电产生静电力,并且通过静电力将目标对象吸附到陶瓷板120的吸附表面。
另外,在陶瓷板120中布置有加热器电极,并且加热器电极在被通电时产生热量,从而调节陶瓷板120和待吸附到陶瓷板120的诸如晶片等目标对象的温度。
图2是示出根据实施例的静电吸盘100的截面的示意图。在图2中,示出了沿图1中的线II-II截取的截面。如图2所示,通过经由树脂层130将陶瓷板120结合到底板110来构造静电吸盘100。
底板110例如是厚度为约20mm至50mm的金属构件,其中形成有成为诸如冷却水和冷却气体等制冷剂的通道的制冷剂通道111。制冷剂通过制冷剂通道111,使得陶瓷板120和吸附到陶瓷板120的晶片被冷却。陶瓷板120被冷却,使得被吸附到陶瓷板120的诸如晶片等目标对象被冷却。
陶瓷板120是例如由陶瓷制成的板,具有约1mm至10mm的厚度,并且在其中包括电极121和加热器电极122。陶瓷例如通过对使用氧化铝制作的生片进行烧成而得到。陶瓷板120的下表面是要结合到底板110的粘合表面,并且陶瓷板120的下表面通过树脂层130结合到底板110的上表面。
当电压被施加到陶瓷板120的电极121时,陶瓷板120通过静电力吸附例如诸如晶片等目标对象。即,在图2中,陶瓷板120的上表面用作吸附表面,并且当电压施加到电极121时,目标对象被吸附到吸附表面。
另外,当电压被施加到陶瓷板120的加热器电极122时,加热器电极122产生热量,使得陶瓷板120被加热,并且被吸附到陶瓷板120的目标对象被加热。通过加热器电极122的加热和通过底板110的冷却调节陶瓷板120的温度,并将吸附到陶瓷板120的目标对象的温度调节到期望的温度。
作为电极121和加热器电极122,例如,可以使用诸如钨等导体。
树脂层130例如是由硅树脂基粘合剂形成的层,并且具有约0.05mm至3.0mm的厚度,并且将陶瓷板120的下表面结合到底板110的上表面。在形成树脂层130的粘合剂中,损耗角正切的极值对应的温度为-70℃以下。图3是示出形成树脂层130的粘合剂的损耗角正切的测定结果的曲线图。图3示出了对用作形成树脂层130的粘合剂的粘合剂A和粘合剂B的各试验片进行动态粘弹性测定(DMA)而获得的测定结果。
图3所示的测定结果的测定条件如下。
测定装置:DMA6100(Hitachi High-Tech公司制)
测定温度范围:-150℃至250℃
升温速度:5℃/min
测定方式:拉伸
测定频率:1Hz
试验片的形状:矩形形状
试验片的尺寸:长15mm×宽15mm×厚0.1mm至1mm
变形幅度:10μm
在DMA中,测定由下式(1)表示的复弹性模量(G*)、储能弹性模量(G')和损耗弹性模量(G")。
G*=G'+G"i…(1)
这里,储能弹性模量(G')是表示粘弹性体的硬度的值,并且损耗弹性模量(G")是表示粘弹性体的粘度的值。
另外,在DMA中,由储能弹性模量(G')和损耗弹性模量(G")算出下述式(2)所示的损耗角正切tanδ。损耗角正切tanδ是表示粘弹性体的粘度贡献度的值。损耗角正切tanδ的极值对应的温度还称为玻璃化转变温度(Tg)。
tanδ=G"/G'…(2)
如图3所示,从试验片得到的测定数据显示,对于粘合剂A,损耗角正切tanδ的极值对应的温度为-102.5℃,并且对于粘合剂B,损耗角正切tanδ的极值对应的温度为-118.5℃。即,可以看出,形成树脂层130的粘合剂(粘合剂A或粘合剂B)具有与损耗角正切的极值对应的温度,即-70℃以下的玻璃化转变温度(Tg)。
当树脂层130的玻璃化转变温度(Tg)高于-70℃时,树脂层130在例如-60℃以下的低温下的柔性可能降低。这是因为形成树脂层130的粘合剂的储能弹性模量(G')在-60℃附近迅速增加,并且粘合剂被固化。当树脂层130的柔性在低温下降低时,由底板110和陶瓷板120之间的热膨胀差异导致的应力不能通过树脂层130充分地缓和,结果,树脂层130可能被破坏。树脂层130的破坏局部地降低了底板110与陶瓷板120之间经由树脂层130的传热特性,结果,降低了作为吸附表面的陶瓷板120的表面上的温度均匀性。
与之对比,树脂层130由在-150℃至250℃的温度范围内玻璃化转变温度(Tg)为-70℃以下的粘合剂形成,使得例如即使在-60℃以下的低温下使用静电吸盘100时,树脂层130也维持良好的柔性。即,由于树脂层130的玻璃化转变温度(Tg)为-70℃以下,所以树脂层130在-60℃以下的低温下的储能模量(G')保持在与室温下的值相同的水平,并且树脂层130的固化受到抑制。因此,即使在低温下使用静电吸盘100时,树脂层130也会变形,因此能够充分缓和因底板110与陶瓷板120的热膨胀差而产生的应力。由此,能够抑制树脂层130在低温下被破坏,结果,陶瓷板120的吸附表面的温度差变小,并且静电吸盘100能够获得充分高的温度均匀性。形成树脂层130的粘合剂的玻璃化转变温度(Tg)更优选为-100℃以下。
此外,形成树脂层130的粘合剂在-60℃的热导率为0.5W/mK以上。例如,图3所示的粘合剂A在-60℃的热导率为2.16W/mK,并且粘合剂B在-60℃的热导率为1.12W/mK。应注意的是,基于热扩散率、比热容和密度计算热导率。热扩散率可以通过例如激光闪光法测量,比热容可以通过例如绝热连续法测量,并且密度可以通过例如液体中称重法测量。
如果形成树脂层130的粘合剂在-60℃下的热导率小于0.5W/mK,则树脂层130在例如-60℃以下的低温下的热导率降低。与之对比,树脂层130由在-60℃下具有0.5W/mK以上的热导率的粘合剂形成,从而可以抑制树脂层130在低温下的热导率的降低。形成树脂层130的粘合剂在-60℃下的热导率优选为1W/mK以上。
另一方面,当树脂层130的厚度薄时,树脂层130不能充分地缓和由不同材料的结合引起的应力,这导致树脂层130的破坏。因此,本申请的发明人进行了实验以研究形成树脂层130的粘合剂的厚度、层间脱层(脱层)(delamination)和吸附表面上的温度均匀性之间的关系。该实验的结果如图4所示。图4是示出了形成树脂层130的粘合剂的厚度、脱层、吸附表面的温度均匀性的关系的示例。应注意的是,层间脱层(脱层)例如是指树脂层130与陶瓷板120之间的脱层。
在图4所示的实验中,将形成树脂层130的粘合剂的厚度设定为4种,在预定的温度范围内进行1000次热循环试验,并且对热循环试验后的静电吸盘100的脱层的有无和吸附表面的温度差进行评价。在本实验中,形成树脂层130的粘合剂的厚度被设定为0.3mm、0.25mm、0.2mm和0.15mm四种。另外,在本实验中,将热循环试验的温度范围设定为-40℃至60℃。
如图4所示,当粘合剂的厚度为0.25mm以上时,树脂层130和陶瓷板120之间没有发生脱层。另外,当粘合剂的厚度为0.25mm以上时,与粘合剂的厚度小于0.25mm的情况相比,陶瓷板120的吸附表面上的温度差更小。即,从图4的结果可以看出,当形成树脂层130的粘合剂的厚度为0.25mm以上时,可以抑制脱层的发生,并且可以保持吸附表面上的高的温度均匀性。因此,优选的是,形成树脂层130的粘合剂的厚度为0.25mm以上。
(变型实施例)
应注意的是,在上述实施例中,已经作为示例示出了通过一层粘合剂形成使底板110和陶瓷板120结合的树脂层130的情况。然而,可以通过层叠(层压)多种粘合剂形成结合层。即,结合层可以由一种或多种层叠的粘合剂形成。具体而言,例如,如图5所示,在根据第一变型实施例的静电吸盘100A中,可以通过层叠第一粘合剂131和第二粘合剂132来形成树脂层130A。图5是示出根据第一变型实施例的静电吸盘100A的截面的示意图。第一粘合剂131被施加到底板110。第二粘合剂132被施加在第一粘合剂131和陶瓷板120之间。第一粘合剂131和第二粘合剂132各自具有与损耗角正切的极值对应的温度,即-150℃至250℃的温度范围内的-70℃以下的玻璃化转变温度(Tg)。第一粘合剂131的玻璃化转变温度(Tg)和第二粘合剂132的玻璃化转变温度(Tg)可以相同或不同。这样,通过施加第一粘合剂131和第二粘合剂132来形成树脂层130A,促进了树脂层130A在低温下的变形,并且吸收了水平方向上的位移,从而可以进一步抑制树脂层130在低温下的破坏。应注意的是,树脂层130可以通过层叠片状第一粘合剂131和片状第二粘合剂132形成。
另外,当结合层由一种或多种层叠的粘合剂形成时,一种或多种粘合剂中的至少一种可以具有在-150℃至250℃的温度范围内损耗角正切的极值对应的-70℃以下的温度。例如,对于形成结合层的一种或多种粘合剂中的仅一种,在-150℃至250℃的温度范围内损耗角正切的极值对应的温度可以为-70℃以下。图6示出了这种情况下的变型例。图6示出了根据第二变型实施例的静电吸盘100B的截面的示意图。如图6所示,在根据第二变型实施例的静电吸盘100B中,通过层叠片状的第一粘合剂133和第二粘合剂132来形成树脂层130B。第一粘合剂133层叠在底板110上。第二粘合剂132层叠在第一粘合剂133和陶瓷板120之间。第一粘合剂133和第二粘合剂132中的第二粘合剂132在-150℃至250℃的温度范围内损耗角正切的极值对应的温度为-70℃以下。另一方面,在第一粘合剂133的情况下,与损耗角正切的极值对应的温度高于-70℃。在该情况下,第一粘合剂133的热固化前的粘度和热固化后的储能弹性模量可以大于第二粘合剂132的热固化前的粘度和热固化后的储能弹性模量。由此,由于第一粘合剂133的硬度被适当地保持,所以树脂层130B的厚度可以通过第一粘合剂133的厚度被适当地调整。在图6的示例中,第一粘合剂133的厚度大于第二粘合剂132的厚度。例如,第一粘合剂133的厚度为约0mm至1mm,并且第二粘合剂132的厚度为约0.05mm至0.5mm。
应注意的是,在图5和图6的示例中,树脂层130A和130B是通过层叠两层粘合剂而形成的。然而,树脂层可以通过层叠三层或更多层的粘合剂形成。
(其它变型实施例)
应注意的是,在上述的静电吸盘100中,通过在树脂层130中含有氧化铝、碳化硅、氧化锌等填充材料,可以提高树脂层130的热导率。另外,从通过树脂层130提高底板110和陶瓷板120之间的粘合性的观点来看,根据需要,可以在树脂层130的上表面和下表面上设置硅烷耦联层。
如上所述,根据该实施例的静电吸盘(例如,静电吸盘100)包括底板(例如,底板110)、陶瓷板(例如,陶瓷板120)和树脂层(例如,树脂层130;130A;130B)。陶瓷板固定到底板,并且构造为通过由对埋入电极的通电产生的静电力来吸附目标对象。树脂层是用于使底板和陶瓷板结合的树脂层,并且由一种或多种层叠的粘合剂形成,该粘合剂中的至少一种粘合剂在-150℃至250℃的温度范围内具有与损耗角正切的极值对应的-70℃以下的温度。因此,根据本实施例的静电吸盘,能够抑制树脂层在低温下被破坏,结果,能够获得足够高的温度均匀性。
另外,一种或多种粘合剂中的至少一种在-60℃的温度下具有0.5W/mK以上的热导率。由此,根据本实施例的静电吸盘,能够抑制树脂层的热导率在低温下降低。
此外,一种或多种粘合剂中的至少一种可以包含填料。由此,根据本实施例的静电吸盘,能够提高树脂层的热导率。
此外,树脂层可以包括施加到底板的第一粘合剂(例如,第一粘合剂131;133),以及施加在第一粘合剂和陶瓷板之间的第二粘合剂(例如,第二粘合剂132)。第一粘合剂和第二粘合剂中的至少一个在-150℃至250℃的温度范围内可以具有与损耗角正切的极值对应的-70℃以下的温度。由此,根据本实施例的静电吸盘,促进了树脂层在低温下的变形,并且吸收了水平方向上的位移,从而可以进一步抑制树脂层在低温下被破坏。
此外,第一粘合剂和第二粘合剂中的一个粘合剂在-150℃至250℃的温度范围内可以具有与损耗角正切的极值对应的-70℃以下的温度。另外,第一粘合剂和第二粘合剂中的另一个粘合剂的热固化前的粘度和热固化后的储能弹性模量可以大于第一粘合剂和第二粘合剂中的一个粘合剂的热固化前的粘度和热固化后的储能弹性模量。由此,根据本实施例的静电吸盘,能够适当地调整树脂层的厚度。
此外,第一粘合剂和第二粘合剂中的另一个的厚度可以大于第一粘合剂和第二粘合剂中的一个的厚度。由此,根据本实施例的静电吸盘,能够适当地调整树脂层的厚度。
Claims (6)
1.一种静电吸盘,包括:
底板;
陶瓷板,其固定到所述底板,并且包括埋入所述陶瓷板中的电极;以及
树脂层,其使所述底板和所述陶瓷板结合,并且包括一种或多种粘合剂,
其中,在所述一种或多种粘合剂中的至少一种中,在-150℃至250℃的温度范围内损耗角正切的极值对应的温度为-70℃以下。
2.根据权利要求1所述的静电吸盘,其中,所述一种或多种粘合剂中的所述至少一种在-60℃下具有0.5W/mK以上的热导率。
3.根据权利要求1所述的静电吸盘,其中,所述一种或多种粘合剂中的所述至少一种包含填料。
4.根据权利要求1所述的静电吸盘,其中,所述树脂层具有:
第一粘合剂,其施加到所述底板,以及
第二粘合剂,其施加在所述第一粘合剂和所述陶瓷板之间,并且
在所述第一粘合剂和所述第二粘合剂中的至少一个中,在-150℃至250℃的所述温度范围内所述损耗角正切的所述极值对应的温度为-70℃以下。
5.根据权利要求4所述的静电吸盘,其中,在所述第一粘合剂和所述第二粘合剂中的一个中,在-150℃至250℃的所述温度范围内所述损耗角正切的所述极值对应的温度为-70℃以下,并且
所述第一粘合剂和所述第二粘合剂中的另一个的热固化前的粘度和热固化后的储能弹性模量大于所述第一粘合剂和所述第二粘合剂中的所述一个的热固化前的粘度和热固化后的储能弹性模量。
6.根据权利要求5所述的静电吸盘,其中,所述第一粘合剂和所述第二粘合剂中的所述另一个的厚度大于所述第一粘合剂和所述第二粘合剂中的所述一个的厚度。
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- 2022-11-09 US US17/983,528 patent/US20230142870A1/en active Pending
- 2022-11-09 CN CN202211397163.9A patent/CN116110841A/zh active Pending
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JP2023071003A (ja) | 2023-05-22 |
TW202325536A (zh) | 2023-07-01 |
KR20230068307A (ko) | 2023-05-17 |
US20230142870A1 (en) | 2023-05-11 |
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