TWI597820B - 組件載體複合物及用於製造複數個組件載體區域的方法 - Google Patents
組件載體複合物及用於製造複數個組件載體區域的方法 Download PDFInfo
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Description
本發明涉及一種具有複數個組件載體區域之組件載體複合物、及製造複數個組件載體區域之方法。
例如,光電半導體晶片之類的光電組件通常為了繼續處理而安裝在組件載體上。
此種組件載體例如可建構成陶瓷-載體。然而,利用此種組件載體,不易滿足通常對「側面之直角」的高準確性的需求。
本發明的目的是使組件載體之形成簡化,其滿足高準確性的需求。此外,本發明提供一種方法,其使組件載體的製造簡化。
上述目的藉由申請專利範圍獨立項之物件來達成。各種佈置和其它形式描述在申請專利範圍各附屬項中。
依據一實施形式,組件載體複合物具有複數個組件載體區域,其用於較佳是光電半導體組件之固定。組件載體複合物具有一載體,此載體具有第一主面。載體中自第一主面形成溝槽結構,其具有沿著第一方向的較佳是互相平行而延伸之第一溝槽,其中第一溝槽在一與該溝槽成橫向而延伸之第二方向中限定所述組件載體區域。在載體上形成一塗層,使各組件載體區域分別具有該載體之一至少以區域方式而被塗層之第一主面及該溝槽結構之一至少以區域方式而被塗層之側面。
依據一實施形式,在用於製造複數個組件載體區域之方法中,製備一載體,其具有第一主面和與第一主面相對向的第二主面。溝槽結構自第一主面形成於載體中,其中該溝槽結構具有沿著第一方向而延伸之第一溝槽,其使相鄰地在一與第一方向成橫向而延伸之第二方向中配置而成的組件載體區域至少以區域方式互相隔開。形成一塗層,其至少以區域方式覆蓋第一主面且至少以區域方式覆蓋該溝槽結構之側面。載體自第二主面變薄,使溝槽結構至少以區域方式在一傾斜於或垂直於第一主面而延伸之方向中完全經由該載體而延伸。
本方法適合用來製造上述之組件載體複合物。以下結合該組件載體複合物而描述之特徵因此亦可用於本方法且反之亦然。
依據一實施形式,該溝槽結構藉由一種化學方法(特別是乾式化學方法)或藉由侵蝕而形成。特別是反應式離子深蝕刻(Deep Reactive Ion Etching)或以此為主之方法(例如,高級矽蝕刻(Advanced Silicon Etching))適合用作乾式化學方法。以此方法,能以較高的準確性來形成多個具有高的縱橫比(aspect ratio)之溝槽,即,該些溝槽所具有的深度大於其寬度。
每一組件載體區域之至少一側面因此在形成該溝槽結構時已形成。側面之一角度在形成該溝槽結構時可很準確地調整,以便能以很高的準確度來製造各溝槽,其具有一垂直於第一主面之側面。
載體較佳是以半導體材料為主。例如,矽特別是由
於其成本有利且大面積的可使用性而適用於此處。然而,亦可使用其它半導體材料,例如,砷化鎵或鍺。
藉由在側面上延伸之塗層,則一固定在第一主面上之半導體組件能以簡易的方式達成電性接觸。
在另一佈置形式中,組件載體區域之至少二個側面至少以區域方式進行塗層。此塗層亦可在全部的側面上至少以區域方式覆蓋或完全地覆蓋該組件載體區域之側面。該載體因此廣泛地設有該塗層。
在一較佳的佈置中,該塗層藉由一塗層源而形成,其中該塗層源之主塗層方向傾斜於法線而立於第一主面上。組件載體區域之至少一側面之塗層之形成因此已簡化。
在塗層的期間,載體可相對於第一主面之法線而旋轉。組件載體區域之側面之多側面的塗層或全部側面的塗層因此已簡化。
在組件載體複合物之另一實施形式中,第一溝槽沿著第一方向只以區域方式經由載體而延伸。換言之,載體沿著第一方向的範圍大於第一溝槽沿著該方向的範圍。此外,載體較佳是連續地形成。全部之組件載體區域因此可製備於一機械穩定的共用之組件載體複合物中。
在另一形式中,沿著第二方向相鄰地配置之組件載體區域藉由第一溝槽而在相連之載體中互相隔開。
在另一佈置形式中,該溝槽結構沿著第二方向具有特別是互相平行而延伸之第二溝槽,其沿著第一方向而
限定該些組件載體區域。在此種溝槽結構中,在形成此種溝槽結構時可形成該載體之二個或更多個(特別是全部之)側面。這樣在組件載體區域中就可使劃分該組件載體複合物所需之另一劃分步驟省略。
在較佳的另一形式中,各組件載體區域配置在一共用之輔助載體(例如,一種黏合箔)上且藉由該溝槽結構而互相隔開。各組件載體區域因此以劃分的形式(例如,矩陣形式)而存在於該輔助載體上。「組件載體區域設有半導體組件」例如藉由取-和-置(Pick-and-Place)-方法來達成且在與以抽屜形式存在之組件載體比較下已簡化。
在本方法之一種形式中,該溝槽結構形成為柵格形式,使載體在薄化時劃分成互相隔開的組件載體區域。各組件載體區域在此種情況下因此分別是一種已劃分之組件載體,就其製造而言除了形成溝槽結構和薄化以外不需其它的劃分步驟。
在本方法之另一種形式中,該溝槽結構形成為條形的形式且該載體在薄化時劃分成複數個組件載體條,其分別具有複數個組件載體區域。一組件載體條之各組件載體區域然後在另一劃分步驟中劃分成組件載體。此種劃分可在半導體組件固定之前或之後在組件載體上進行。例如,一種機械式劃分方法,例如,切鋸、斷裂或折斷、或雷射分離方法,適用於此處。
在本方法之另一形式中,該溝槽結構只以區域方式形成為條形。在完全分離之後,該組件載體具有相連之載體,藉此來形成複數個組件載體區域。
在一較佳的形式中,在使由組件載體複合物構成的組件載體區域劃分成組件載體之前,各個組件固定在組件載體區域上。
設置各組件亦可在組件載體複合物中進行。
在另一較佳之形式中,各組件在劃分之前受到驅動。藉由運作之起始,則例如可對無功能或已在很短的操作之後故障的各組件進行測定且隨後進行篩選。各組件較佳是在組件載體複合物中電性互相連接,使複數個組件同時可受到電性驅動。
其它特徵、佈置和適當性由以下之實施例結合各圖式的描述即可明白。
各圖式中相同、相同形式或作用相同的各組件分別設有相同的參考符號。
各圖式和各圖式中所示的各元件之間的大小比例未必依比例繪出。反之,為了清楚及/或易於理解,各別元件已予放大地顯示出。
組件載體複合物1之第一實施例以放大的區段圖顯示在圖1A的俯視圖中,且沿著線AA’之相關的切面圖顯示在圖1B中。組件載體複合物具有載體2,其例如可構成為半導體晶圓。載體2較佳是以半導體材料(特別是矽)為主。與此不同,亦可使用其它材料,其大致上是砷化鎵或鍺。
在垂直於載體2之主延伸平面而延伸的垂直方向中,載體係在第一主面21和第二主面22之間延伸。溝
槽結構3自第一主面21以互相平行而延伸之第一溝槽31來形成。第一溝槽31沿著第一方向而延伸。第一溝槽在垂直方向中完全經由載體2而延伸。沿著第一方向,第一溝槽31只以區域方式經由載體2而延伸,使載體2雖然有第一溝槽31的存在仍連續地形成。換言之,載體2形成為單件。
在一放大的示圖中顯示四個組件載體區域10。沿著一垂直於第一方向而延伸之第二方向,二個相鄰的組件載體區域10藉由第一溝槽31而互相隔開。沿著第二方向顯示一劃分線8。沿著此線,則可將沿著第一方向而相鄰的組件載體區域10予以劃分。此種劃分例如能以機械方式,大致上是藉由斷裂、折斷或切鋸,來進行。亦可使用雷射分離方法。在劃分之後,每一組件載體區域都具有二個側面5(其藉由溝槽結構3來形成)及二個分別成垂直之側面或至少成橫向的側面,其只有在組件載體複合物1劃分成組件載體時才產生。
藉由第一溝槽31而形成側面5,其沿著第二方向來限定組件載體區域10之載體2。在載體2上形成一塗層4。此塗層4例如在第一主面21和第二主面5上延伸。載體2之第二主面22不具備該塗層4之材料。
各組件載體區域10分別用於自第一主面21來固定至少一個半導體組件,其例如為一種光電半導體晶片,大致上是LED或雷射二極體。較佳是將該塗層4結構化,使固定在該組件載體複合物1上之半導體組件可共同地達成電性接觸。
在所示的實施例中,該塗層4以條形的形式沿著第一方向且超過多個組件載體區域10而延伸。固定在該組件載體複合物上之多個半導體組件可在操作(特別是共同地操作)中。因此,能以簡易的方式來對無功能的半導體組件進行測定且進行篩選,該些半導體組件在較短的操作時間之後故障或不能滿足預設的電子性能或光電性能。
在短暫的起動之後,可沿著劃分線8來對組件載體區域10進行劃分。在劃分時,相鄰之組件載體區域之間的電性連接因此被隔開。
藉由上述劃分之步驟,則可由組件載體複合物得到組件載體,其上已固定著半導體組件。
特別是對各個半導體組件之已簡化的固定而言,可在該塗層4上形成另一塗層,例如焊劑層(圖1A和圖1B未明顯示出)。
該塗層4之佈置可自由地在廣大的界限中變化。該塗層特別是亦可未被結構化且完全在該載體2之第一主面21上延伸。此外,亦可形成該塗層4,使只有一側面5至少以區域方式由該塗層4所覆蓋。
此外,該塗層亦可形成為多層。該塗層4之至少一層較佳是含有一種金屬,其例如是銅、金、銀、鋁、鉑、鈦或鎢、或具有上述材料之至少一種的金屬合金。
圖2A和圖2B所示的組件載體複合物之第二實施例基本上對應於圖1A和圖1B所示之第一實施例。不同之處為,該組件載體複合物具有條形的區域15,其藉由溝
槽結構3之第一溝槽31而形成。第一溝槽31沿著第一方向完全超過該載體2而延伸,使分別具有複數個組件載體區域10之條形區域互相隔開地存在著。
條形區域15配置在一共同的輔助載體6上。一種箔(特別是可自我黏合之箔)例如適合用作輔助載體6。就像第一實施例所述那樣,條形區域15上的多個組件載體區域10可在半導體組件固定之前或之後沿著劃分線8而被劃分。
圖3A和圖3B所示之第三實施例基本上對應於圖2A和圖2B所示之第二實施例。不同之處為,該溝槽結構3具有沿著第二方向而延伸之第二溝槽32。
藉由該溝槽結構3,則各別之組件載體區域10之載體2可完全互相隔開且存在於一輔助載體6上以作進一步處理,例如,設置多個半導體組件。藉由該輔助載體6,則各組件載體區域10可相鄰地配置成規則之結構,其例如為矩陣形式。與抽屜形式存在的組件載體比較下,可使半導體組件的設置(例如,藉由取-和-置-方法)簡化。
本實施例中,組件載體區域10之各別載體2之側面5在所有側面上都設有一塗層4。然而,如以上的各圖所示,該塗層4亦可只形成在一側面上或二個側面上。
在該塗層4之遠離該載體2之此側上形成另一塗層7。此另一塗層7例如可形成為一焊劑層。例如,此另一塗層7可含有金、銦、錫或銀。亦可使用一種金屬合金(例如,金-錫-合金),其具有上述材料之至少一種。
製造複數個組件載體區域之方法的一實施例依據顯示在切面圖中的中間步驟而顯示在圖4A至圖4F中。在俯視圖中,該組件載體複合物可像圖1A至圖3C所示一樣地構成。
製備一種載體2,此載體2在垂直方向中在第一主面21和第二主面22之間延伸(圖4A)。自第一主面21形成一種具有複數個第一溝槽31之溝槽結構3。第一溝槽31在垂直方向中未完全經由載體2而延伸。
溝槽結構之形成較佳是以化學方式(特別是乾式化學)來進行,大致上是藉由反應式離子深蝕刻或藉由ASE來進行。與此不同,亦可使用一種侵蝕方法。
如圖4B所示,藉由塗層源來形成一塗層4。箭頭9表示該塗層源之主塗層方向。該主塗層方向傾斜於第一主面21之法線而形成。該溝槽結構3之側面5之塗層因此已簡化。例如,亦可使用濺鍍-方法或蒸鍍來塗層。
與上述之實施例不同,該塗層4亦可被結構化而形成,這例如藉由光微影方法來達成。
如圖4C所示,可在塗層4上施加另一塗層7。此另一塗層7能以參照該塗層4所述之方法來達成。或是,此另一塗層亦可藉由絲網印刷方法施加而成。此另一塗層之已結構化之施加方式因此能以簡易且成本有利的方式來實現。
載體2自第一主面21而固定在一暫時之載體65上(圖4D)。例如,一種箔適合用作該暫時之載體65。或是,亦可使用固定的載體。
由第二主面22將載體2至少廣大地薄化,使溝槽結構3在垂直方向中完全經由載體而延伸(圖4E)。此種薄化例如能以機械方式,大致上是研磨、磨光、或拋光,來達成。然後,可自第二主面22施加一輔助載體6。該暫時之載體65然後可被剝除。
在佈置該溝槽結構時,如圖1A和圖1B所示,載體2亦可在薄化之後連續地形成,因此可省略該輔助載體6。
圖5A和圖5B所示之方法的第二實施例基本上對應於圖4A至圖4F所示之第一實施例。不同之處為,載體2在塗層期間相對於其法線而旋轉,使塗層4可覆蓋該溝槽結構3之全部的側面5。
已製成的組件載體區域10顯示在圖5B中。
藉由上述方法,能以簡易且可靠的方式來製造組件載體,其中至少一側面已在該溝槽結構形成時產生。這樣所製成的組件載體的特徵是:該側面相對於第一主面之準確度特別高。該側面之傾斜角度特別是在該溝槽結構形成時可調整。相對於第一主面21之該傾斜角度較佳是90度,其具有最多+/-5度之偏差。然而,依據對即將製成之組件載體之需求,一種不同於90度之角度亦是適當者,特別是一種介於10度(含)和85度(含)之間的角度,例如,45度。
此外,能以簡易的方式在組件載體複合物中製備多個組件載體區域10,以便設置多個半導體組件且另外亦能以簡易的方式來進行該些半導體組件之起動。
本專利申請案主張國際專利申請案PCT/EP 2011/057334之優先權,其已揭示的整個內容在此一併作為參考。
本發明當然不限於依據各實施例中所作的描述。反之,本發明包含每一新的特徵和各特徵的每一種組合,特別是包含各申請專利範圍-或不同實施例之各別特徵之每一種組合,當相關的特徵或相關的組合本身未明顯地顯示在各申請專利範圍中或各實施例中時亦屬本發明。
1‧‧‧組件載體複合物
10‧‧‧組件載體區域
15‧‧‧條形之區域
2‧‧‧載體
21‧‧‧第一主面
22‧‧‧第二主面
3‧‧‧溝槽結構
31‧‧‧第一溝槽
32‧‧‧第二溝槽
4‧‧‧塗層
5‧‧‧側面
6‧‧‧輔助載體
65‧‧‧暫時之載體
7‧‧‧另一塗層
8‧‧‧劃分線
9‧‧‧箭頭
圖1A是組件載體複合物之第一實施例之俯視圖且圖1B是所屬之切面圖。
圖2A是組件載體複合物之第二實施例之俯視圖且圖2B是所屬之切面圖。
圖3A是組件載體複合物之第三實施例之俯視圖且圖3B是所屬之切面圖。
圖4A至圖4F是依據各別顯示在切面圖中的中間步驟以製造多個組件載體區域之方法的一實施例。
圖5A和圖5B是依據顯示在切面圖中的中間步驟以製造多個組件載體區域之方法的第二實施例。
1‧‧‧組件載體複合物
10‧‧‧組件載體區域
2‧‧‧載體
3‧‧‧溝槽結構
31‧‧‧第一溝槽
5‧‧‧側面
8‧‧‧劃分線
Claims (12)
- 一種組件載體複合物(1),具有複數個組件載體區域(10),其用於半導體組件之固定,其中- 該組件載體複合物具有一載體(2),此載體(2)具有第一主面(21),- 該載體中自該第一主面形成溝槽結構(3),其具有沿著第一方向而延伸之第一溝槽(31),該第一方向係沿該第一主面延伸,其中該第一溝槽在一與該第一溝槽成橫向而延伸之第二方向中限定所述組件載體區域;- 在該載體上形成一塗層(4),使所述組件載體區域分別具有該載體之一至少以區域方式而被塗層之第一主面及該溝槽結構之一至少以區域方式而被塗層之側面(5);以及- 該些第一溝槽沿著第一方向只以區域方式經由該載體而延伸且該載體連續地形成。
- 如申請專利範圍第1項之組件載體複合物,其中該載體係以半導體材料為主。
- 如申請專利範圍第1項之組件載體複合物,其中一組件載體區域之至少二個側面已被塗層。
- 如申請專利範圍第1至3項中任一項之組件載體複合物,其中該些第一溝槽在一傾斜於或垂直於第一主面而延伸的方向中完全經由該載體而延伸。
- 如申請專利範圍第1至3項中任一項之組件載體複合物,其中該些第一溝槽互相平行而延伸。
- 如申請專利範圍第1至3項中任一項之組件載體複合物,其中該塗層被結構化,使固定在該組件載體複合物上的半導體組件可共同地被電性接觸。
- 如申請專利範圍第1至3項中任一項之組件載體複合物,其中該載體在第一主面和第二主面之間延伸且第二主面不具備該塗層之材料。
- 一種用於製造複數個組件載體區域(10)之方法,具有以下各步驟:a)製備一載體(2),其具有第一主面(21)和與該第一主面相對向的第二主面(22);b)形成溝槽結構(3),其自該第一主面形成於該載體中,其中該溝槽結構具有沿著第一方向而延伸之第一溝槽(31),其使相鄰地在一與該第一方向成橫向而延伸之第二方向中配置而成的組件載體區域至少以區域方式互相隔開;c)形成一塗層(4),其至少以區域方式覆蓋該第一主面且至少以區域方式覆蓋該溝槽結構之一側面(5);及d)將該載體自第二主面變薄,使該溝槽結構至少以區域方式在一傾斜於或垂直於該第一主面而延伸之方向中完全經由該載體而延伸;其中該溝槽結構只以區域方式形成為條形,使得在步驟d)之後該載體連續地形成且以該載體來形成複數個組件載體區域。
- 如申請專利範圍第8項之方法,其中該塗層在步驟c)中藉由一塗層源而形成且該塗層源之主塗層方向傾斜 於法線而立於該第一主面上。
- 如申請專利範圍第8項之方法,其中該溝槽結構藉由乾式化學方法或藉由侵蝕而形成。
- 如申請專利範圍第8項之方法,其中在所述組件載體區域被劃分之前,各組件固定在組件載體區域上。
- 如申請專利範圍第11項之方法,其中所述組件在劃分之前受到驅動。
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-
2011
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- 2011-05-06 CN CN201180070672.4A patent/CN103503175B/zh active Active
- 2011-05-06 DE DE112011105215.4T patent/DE112011105215A5/de active Pending
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- 2011-05-06 JP JP2014509608A patent/JP5805306B2/ja active Active
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TW201304120A (zh) | 2013-01-16 |
CN103503175B (zh) | 2016-05-25 |
DE112011105215A5 (de) | 2014-05-15 |
US9623527B2 (en) | 2017-04-18 |
CN103503175A (zh) | 2014-01-08 |
JP2014519699A (ja) | 2014-08-14 |
JP5805306B2 (ja) | 2015-11-04 |
WO2012152307A1 (de) | 2012-11-15 |
US20140145391A1 (en) | 2014-05-29 |
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