CN103503175B - 具有分隔器件载体区域的沟槽结构的器件载体复合结构与用于制造多个器件载体区域的方法 - Google Patents
具有分隔器件载体区域的沟槽结构的器件载体复合结构与用于制造多个器件载体区域的方法 Download PDFInfo
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Abstract
本发明提出一种具有多个器件载体区域(10)的器件载体复合结构(1),所述器件载体区域(10)设置为用于固定半导体器件。器件载体复合结构(1)具有载体本体(2),例如为半导体晶片,所述载体本体具有第一主面(21)。在所述载体本体(2)中,在第一主面(21)一侧,构成具有沿着第一方向彼此平行伸展的第一沟槽(31)的沟槽结构(3),其中第一沟槽(31)在横向于沟槽(31)伸展的第二方向上对器件载体区域(10)限界。覆层(4)构成在载体本体(2)上,以至于器件载体区域(10)分别具有载体本体(2)的至少局部被覆层的第一主面(21)和所述沟槽结构(3)的至少局部被覆层的侧面(5)。此外,提出一种用于制造多个器件载体区域(10)的方法。在载体本体(2)中在第一主面(21)一侧构成沟槽结构(3),随后构成覆层(4)并且在其第二主面(22)一侧使载体本体(2)变薄,使得沟槽结构(3)至少局部地在倾斜或者垂直于第一主面(21)伸展的方向上完全延伸穿过载体本体(2)。沟槽结构(3)特别能够构成为网格状的或者条带状的,以至于载体本体(2)在变薄时被分为分别具有多个器件载体区域(10)的彼此分隔的器件载体条带或者器件载体区域(10)。
Description
技术领域
本专利申请涉及一种具有多个器件载体区域的器件载体复合结构以及一种用于制造多个器件载体区域的方法。
背景技术
光电子器件、例如光电子半导体芯片通常为了进一步处理被安装在器件载体上。
这种器件载体例如能够构成为陶瓷载体。但是通过这种器件载体很难满足高精度要求,例如对侧面的垂直度的要求。
发明内容
本发明的目的是,简化满足高精度要求的器件载体的构成。此外,应提出一种简化器件载体的制造的方法。
所述目的通过独立权利要求的主题来实现。设计方案和改进方案是从属权利要求的主题。
根据一个实施形式,器件载体复合结构具有多个器件载体区域,所述器件载体区域优选设置为用于固定光电子半导体器件。器件载体复合结构具有载体本体,所述载体本体具有第一主面。在载体本体中,在第一主面一侧构成具有沿着第一方向优选彼此平行伸展的第一沟槽的沟槽结构,其中第一沟槽在横向于沟槽伸展的第二方向上对器件载体区域限界。在载体本体上构成覆层,以至于器件载体区域分别具有载体本体的至少局部地覆层的第一主面和沟槽结构的至少局部地覆层的侧面。
在用于制造多个器件载体区域的方法中,根据一个实施形式,提供具有第一主面和与第一主面相对置的第二主面的载体本体。沟槽结构在载体本体中在第一主面一侧构成,其中沟槽结构具有沿着第一方向伸展的第一沟槽,所述第一沟槽在横向于第一方向伸展的第二方向上相邻地设置的器件载体区域中至少局部地彼此分隔。构成至少局部地覆盖第一主面并且至少局部地覆盖沟槽结构的侧面的覆层。在第二主面的一侧使载体本体变薄,使得沟槽结构至少局部地在倾斜于或者垂直于第一主面伸展的方向上完全地延伸穿过载体本体。
该方法尤其适合于制造之前所描述的器件载体复合结构。
因此,下面结合器件载体复合物所描述的特征也能够用于所述方法并且反之亦然。
沟槽结构根据一个实施形式借助于化学的、特别是干法化学的方法或者借助于腐蚀构成。作为干化学的方法,深反应离子刻蚀(DeepReactiveIonEtching,DRIE)或者基于此的方法、例如高级硅刻蚀(ASE)是特别合适的。通过这些方法,能够以高精度构成具有大的宽高比的沟槽,即与其宽度相比能够具有大的深度的沟槽。
因此,已经在构成沟槽结构时构成每个器件载体区域的至少一个侧面。在构成沟槽结构时能够非常准确地调节侧面的角度,以至于能够以非常高的精度来制造例如具有垂直于第一主面的侧面的沟槽。
载体本体优选基于半导体材料。例如硅由于其成本适宜的且大平面的可用性是特别适合的。但是也能够使用另一种半导体材料、例如砷化镓或者锗。
借助于在侧面之上延伸的覆层,固定在第一主面上的半导体元件能够以简单的方式电接触。
在一个设计变型形式中,器件载体区域的至少两个侧面至少局部地被覆层。覆层也能够全方位地至少局部地或者完全地覆盖器件载体区域的侧面。因此,载体本体全面地设置有覆层。
在一个优选的设计方案中,覆层借助于覆层源构成,其中覆层源的主覆层方向倾斜于第一主面上的法线。因此,简化了器件载体区域的至少一个侧面的覆层的构成。
在覆层期间,载体本体能够关于第一主面的法线旋转。因此,简化了器件载体区域的侧面的多边的或者也可以是全方位的覆层。
在器件载体复合结构的一个实施方案变型形式中,第一沟槽沿着第一方向仅局部地在载体本体上延伸。换句话说,载体本体沿着第一方向的扩展大于第一沟槽沿着该方向的扩展。此外,优选载体本体构成为连续的。因此,能够在共同的、机械稳定的器件载体复合结构中提供所有的器件载体区域。
在一个改进方案中,沿着第二方向相邻地设置的器件载体区域通过连续的载体本体中的第一沟槽彼此分隔。
在另一实施方案变型中,沟槽结构具有沿着第二方向、特别是彼此平行伸展的第二沟槽,所述第二沟槽沿着第一方向对器件载体区域限界。在这种沟槽结构中,在构成沟槽结构时构成载体本体的两个或更多的、特别是所有的侧面。能够放弃用于将器件载体复合结构分割成器件载体区域的附加的分割步骤。
在一个优选的改进方案中,器件载体区域设置在共同的辅助载体上,例如设置在粘性薄膜上,并且借助于沟槽结构彼此分隔。器件载体区域因此以分割的形式、例如矩阵状地存在于辅助载体上。因此,例如借助于拾取和放置法对器件载体区域装配半导体器件与作为散装货物存在的器件载体相比被简化。
在所述方法的一个设计方案中,沟槽结构构成为网格状的,以至于载体本体在变薄时被分割成彼此分开的器件载体区域。因此,器件载体区域在这种情况下为分割开的器件载体,对于所述分割开的器件载体的制造,除了构成沟槽结构和变薄之外,不需要其它的分割步骤。
在所述方法的另一个设计方案变型形式中,沟槽结构构成为条带状的,并且载体本体在变薄时被分为分别具有多个器件载体区域的多个器件载体条带。器件载体条带的器件载体区域能够接着在另一分割步骤中被分割成器件载体。分割能够在将半导体器件固定在器件载体上之前或之后进行。机械的分割方法、例如锯割、分裂或者折断,或者激光分离法例如是适合的。
在所述方法的另一个设计方案变型形式中,沟槽结构仅局部地构成为条带状的。在完全的隔断之后,器件载体具有连续的载体本体,通过所述载体本体形成多个器件载体区域。
在一个优选的设计方案中,在将器件载体区域从器件载体复合结构中分割成器件载体之前,器件被固定在器件载体区域上。
因此仍能够在器件载体复合结构中进行器件的装配。
在另一个优选的设计方案中,在分割之前运行器件。借助于调试,例如能够测定器件并且接着选出不可正常工作的或者在非常短的运行后已失灵的器件。优选地,将器件载体复合结构中的器件彼此电连接为,使得多个器件能够同时电运行。
附图说明
其它的特征、设计方案和适宜方案从下面结合附图对实施例的描述中得出。
其示出:
图1A和1B示出用于器件载体复合结构的第一实施例的示意俯视图(图1A)和所属的剖视图(图1B);
图2A和2B示出用于器件载体复合结构的第二实施例的示意俯视图(图2A)和所属的剖视图(图2B);
图3A和3B示出用于器件载体复合结构的第三实施例的示意俯视图(图3A)和所属的剖视图(图3B);
图4A至4F根据分别示意地在剖视图中示出的中间步骤示出用于制造器件载体区域的方法的一个实施例;以及
图5A和5B根据示意地在剖视图中示出的中间步骤示出用于制造器件载体区域的方法的第二实施例。
相同的、相同类型的或者起相同作用的元件在附图中设有相同的附图标记。
附图和在附图中示出的元件相互间的大小关系不能够视为是按比例的。更确切地说,为了更好的可视性和/或为了更好的理解能够夸大地示出个别元件。
具体实施方式
在图1A中以具有部分放大图的示意俯视图以及在图1B中以沿着线AA’的所属的示意剖视图示出用于器件载体复合结构1的第一实施例。器件载体复合结构具有载体本体2,所述载体本体例如能够构成为半导体晶片。载体本体2优选基于半导体材料,特别是硅。与之不同的是,也能够使用另一种半导体材料,例如砷化镓或者锗。
在垂直于载体本体2的主延伸平面伸展的竖直方向上,载体本体在第一主面21和第二主面22之间延伸。在第一主面21一侧,构成具有彼此平行伸展的第一沟槽31的沟槽结构3。第一沟槽31沿着第一方向延伸。在竖直方向上,第一沟槽完全地延伸穿过载体本体2。第一沟槽31仅局部地在载体本体2之上沿着第一方向伸展,以至于尽管存在第一沟槽31而载体本体2也构成为连续的。换句话说,载体本体2一件式地构成。
在放大图中示出四个器件载体区域10。沿着垂直于第一方向伸展的第二方向,两个相邻的器件载体区域10通过第一沟槽31彼此分隔。沿着第二方向示出分割线8。沿着这条线能够沿着第一方向分割相邻的器件载体区域10。分割例如能够以机械的方式进行,例如借助于分裂、折断或者锯割来进行。也能够使用激光分离法。在分割之后,每个器件载体区域因此具有两个通过沟槽结构3形成的侧面5和两个分别垂直于所述沟槽结构或者至少横向于所述沟槽结构的侧面,所述侧面在将器件载体复合结构1分割成器件载体时才产生。
借助于第一沟槽31形成侧面5,所述侧面沿着第二方向对器件载体区域10的载体本体2限界。在载体本体2上构成覆层4。覆层4局部地在第一主面21上并且在第二侧面5上延伸。载体本体2的第二主面22没有覆层4的材料。
器件载体区域10在第一主面21一侧分别设置为用于固定至少一个半导体器件、例如光电子半导体芯片,如发光二极管(LED)或者激光二极管。覆层4优选结构化为,使得固定在器件载体复合结构1上的半导体器件能够被共同电接触。
在所示出的实施例中,覆层4条带状地沿着第一方向延伸超过多个器件载体区域10。固定在器件载体复合结构上的半导体器件特别是能够共同地运行。因此,能够以简单的方式确定和选择不可正常工作的、在相对短的运行时间后已经失灵或者不满足预设的电子特性或者光电子特性的半导体器件。
在暂时的调试之后,器件载体区域10能够沿着分割线8被分割。因此,在分割时隔断相邻的器件载体区域之间的电连接。
通过分割步骤从器件载体复合结构中得出器件载体,半导体器件已经被固定在所述器件载体上。
特别地,为了半导体器件的简化的固定,另一覆层、例如焊料层能够构成在覆层4上(在图1A和1B中未详细示出)。
覆层4的设计方案在宽的范围中是可自由改变的。特别地,覆层也能够是非结构化的并且完全地在载体本体2的第一主面21上延伸。此外,覆层4也能够构成为,使得仅一个侧面5由覆层4至少局部地被覆盖。
此外,覆层也能够构成为多层的。优选地,覆层4的至少一个层包含金属,例如铜、金、银、铝、铂、钛或者钨,或者包含具有所提到的材料中的至少一种的金属合金。
在图2A和2B中示出的用于器件载体复合结构的第二实施例基本上相应于结合图1A和1B示出的第一实施例。与之不同的是,器件载体复合结构具有条带状的区域15,所述条带状的区域借助于沟槽结构3的第一沟槽31形成。第一沟槽31沿着第一方向延伸完全超过载体本体2,以至于以彼此分开的方式存在分别具有多个彼此分隔的器件载体区域10的条带状的区域。
条带状的区域15设置在共同的辅助载体6上。对于辅助载体6而言,例如薄膜、特别是自粘性的薄膜是适合的。如结合第一个实施例所描述的,在固定半导体器件之前或之后能够沿着分割线8分割在条带状的区域15上的器件载体区域10。
图3A和3B中示出的第三实施例基本上相应于结合图2A和2B所描述的第二实施例。与之不同的是,沟槽结构3具有沿着第二方向伸展的第二沟槽32。
因此,借助于沟槽结构3,各个器件载体区域10的载体本体2完全地彼此分开并且为了进一步处理、例如用半导体器件的装配,而存在于辅助载体6上。借助于辅助载体6,器件载体区域10以规则的结构、例如矩阵状地彼此并排设置。与作为散装货物存在的器件载体相比,例如借助于拾取和放置法简化用半导体器件的装配。
在该实施例中,器件载体区域10的各个载体本体2的侧面5全方位地设有覆层4。但是如结合之前的附图所描述的那样,覆层4也能够在仅一个侧面上或在两个侧面上构成。
在覆层4的背离载体本体2的一侧上构成另一覆层7。另一覆层7例如能够构成为焊料层。例如,另一覆层7能够包含金、铟、锡或者银。也能够使用具有所提到的材料的至少一种的金属合金,例如金锡合金。
根据分别示意地在剖视图中示出的中间步骤,在图4A至4F中示出用于制造多个器件载体区域的方法的一个实施例。在俯视图中能够如结合图1A至3C所描述的那样构成器件载体复合结构。
提供在竖直方向上在第一主面21和第二主面22之间延伸的载体本体2(图4A)。在第一主面21的一侧,构成具有多个第一沟槽31的沟槽结构3。第一沟槽31在竖直方向上不完全延伸穿过载体本体2。
沟槽结构的构成优选化学地,特别是干法化学地,例如借助于深反应离子刻蚀或者借助于ASE来进行。与之不同的是,也能够使用腐蚀法。
如在图4B中所描述的,借助于覆层源构成覆层4。箭头9图解说明覆层源的主覆层方向。主覆层方向倾斜于到第一主面21的法线构成。因此,沟槽结构3的侧面5的覆层被简化。对于覆层例如能够使用溅射法或者蒸镀。
与所描述的实施例不同的是,覆层4能够结构化地构成,例如借助于光刻法构成。
如在图4C中所描述的,在覆层4上能够施加另一覆层7。另一覆层7能够通过结合覆层4所描述的方法来进行。替选地,另一覆层也能够借助于丝网印刷来施加。结构化地施加另一覆层因此可以简单且成本适宜的方式来实现。
载体本体2在第一主面21一侧被固定在临时的载体65上(图4D)。对于临时的载体65,薄膜例如是适合的。替选地,也能够使用刚性的载体。
从第二主面22起至少使载体本体2变薄成,使得沟槽结构3在竖直方向上完全地延伸穿过载体本体(图4E)。变薄例如能够以机械的方式进行,例如借助于磨削、研磨或者抛光来进行。接着在第二主面22的一侧能够施加辅助载体6。临时的载体65接着能够被剥离。
在沟槽结构的一个设计方案中,如结合图1A和1B所描述的,载体本体2在变薄之后也是连续的,以至于也能够放弃辅助载体6。
图5A和5B中示出的方法的第二实施例基本上相应于结合图4A至4F所描述的第一实施例。与之不同的是,载体本体2在覆层期间关于其法线旋转,以至于覆层4能够覆盖沟槽结构3的所有的侧面5。
在图5B中示出已制成的器件载体区域10。
通过所描述的方法能够以简单且可靠的方式制造器件载体,在所述器件载体中在沟槽结构构成时已经产生至少一个侧面。如此制造的器件载体相对于第一主面的特征在于侧面的尤其高的精度。特别地,在沟槽结构构成时已经能够调节侧面的倾斜角。优选地,到第一主面21的倾斜角为90°,具有至多+/-5°的偏差。但是根据对待制造的器件载体的要求,不同于90°的倾斜角、特别是10°和85°之间(包括边界值)、优选45°的倾斜角也是符合目的的。
此外,在器件载体复合结构中能够以简单的方式提供器件载体区域10,以至于能够以简单的方式执行用半导体器件的装配并且此外也以简单的方式执行复合结构中的半导体器件的调试。
本发明不通过根据实施例进行的描述而限制于此。更确切地说,本发明包括每个新的特征以及特征的任意的组合,这尤其是包含在权利要求中的特征的任意的组合,即使这些特征或这些组合本身没有明确地在权利要求中或在实施例中说明也是如此。
Claims (14)
1.一种具有多个器件载体区域(10)的器件载体复合结构(1),所述器件载体区域(10)设置为用于固定半导体器件,其中:
-所述器件复合结构具有载体本体(2),所述载体本体具有第一主面(21),
-在所述载体本体中,在所述第一主面一侧,构成具有沿着沿所述第一主面(21)伸展的第一方向伸展的第一沟槽(31)的沟槽结构(3),其中所述第一沟槽在横向于所述第一沟槽伸展的第二方向上对所述器件载体区域限界;
-在所述载体本体上构成覆层(4),以至于所述器件载体区域分别具有所述载体本体的至少局部覆层的第一主面和所述沟槽结构的至少局部覆层的侧面(5);
-所述载体本体基于半导体材料;
-所述第一沟槽沿着所述第一方向仅局部地在所述载体本体之上延伸并且所述载体本体构成为连续的;以及
-所述载体本体的与所述第一主面相对置的第二主面(22)没有用于所述覆层的材料。
2.根据权利要求1所述的器件载体复合结构,
其中器件载体区域的至少两个侧面被覆层。
3.根据权利要求1所述的器件载体复合结构,
其中沿着所述第二方向相邻设置的器件载体区域通过连续的所述载体本体中的所述第一沟槽中的一个彼此分隔。
4.根据权利要求1至3之一所述的器件载体复合结构,
其中所述第一沟槽在竖直方向上完全地延伸穿过所述载体本体。
5.根据权利要求1至3之一所述的器件载体复合结构,
其中所述第一沟槽彼此平行地伸展。
6.根据权利要求1至3之一所述的器件载体复合结构,
其中所述覆层被结构化为,使得固定在所述器件载体复合结构上的半导体器件能够被共同地电接触。
7.一种用于制造多个器件载体区域(10)的方法,具有如下步骤:
a)提供具有第一主面(21)和与所述第一主面相对置的第二主面(22)的载体本体(2);
b)在所述载体本体中在所述第一主面一侧构成沟槽结构(3),其中所述沟槽结构具有沿着第一方向伸展的第一沟槽(31),所述第一沟槽在横向于所述第一方向伸展的第二方向上相邻设置的器件载体区域中至少局部地彼此分隔;
c)构成覆层(4),所述覆层至少局部地覆盖所述第一主面并且至少局部地覆盖所述沟槽结构的侧面(5);以及
d)在所述第二主面一侧使所述载体本体变薄,使得所述沟槽结构至少局部地在倾斜或者垂直于所述第一主面伸展的方向上完全地延伸穿过所述载体本体。
8.根据权利要求7所述的方法,
其中所述覆层在步骤c)中借助于覆层源构成,并且所述覆层源的主覆层方向倾斜于所述第一主面上的法线。
9.根据权利要求7所述的方法,
其中所述沟槽结构借助于干法化学法或者借助于腐蚀构成。
10.根据权利要求7至9之一所述的方法,
其中所述沟槽结构构成为网格状的,以至于将所述载体本体在步骤d)中分割成彼此分隔的器件载体区域。
11.根据权利要求7所述的方法,
其中所述沟槽结构构成为条带状,并且将所述载体本体在步骤d)中分成分别具有多个器件载体区域的多个器件载体条带。
12.根据权利要求7所述的方法,
其中所述沟槽结构仅局部地构成为条带状,以至于所述器件载体在步骤d)中完全地隔断之后具有连续的载体本体,通过所述载体本体形成多个器件载体区域。
13.根据权利要求11或12所述的方法,
其中在将所述器件载体区域分割之前,将器件固定在器件载体区域上。
14.根据权利要求13所述的方法,
其中在分割之前运行所述器件。
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US9623527B2 (en) | 2017-04-18 |
US20140145391A1 (en) | 2014-05-29 |
TW201304120A (zh) | 2013-01-16 |
JP2014519699A (ja) | 2014-08-14 |
TWI597820B (zh) | 2017-09-01 |
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CN103503175A (zh) | 2014-01-08 |
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