TWI597800B - 氮化鎵對矽之直接晶圓接合 - Google Patents

氮化鎵對矽之直接晶圓接合 Download PDF

Info

Publication number
TWI597800B
TWI597800B TW102118516A TW102118516A TWI597800B TW I597800 B TWI597800 B TW I597800B TW 102118516 A TW102118516 A TW 102118516A TW 102118516 A TW102118516 A TW 102118516A TW I597800 B TWI597800 B TW I597800B
Authority
TW
Taiwan
Prior art keywords
ammonia
bonded
gan
nitride
wafer
Prior art date
Application number
TW102118516A
Other languages
English (en)
Chinese (zh)
Other versions
TW201405702A (zh
Inventor
烏珊柯亞歷山大
Original Assignee
康寧公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 康寧公司 filed Critical 康寧公司
Publication of TW201405702A publication Critical patent/TW201405702A/zh
Application granted granted Critical
Publication of TWI597800B publication Critical patent/TWI597800B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H10P50/00—
    • H10P90/1916—
    • H10W10/181—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10P14/6319—

Landscapes

  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW102118516A 2012-05-31 2013-05-24 氮化鎵對矽之直接晶圓接合 TWI597800B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/484,542 US8796054B2 (en) 2012-05-31 2012-05-31 Gallium nitride to silicon direct wafer bonding

Publications (2)

Publication Number Publication Date
TW201405702A TW201405702A (zh) 2014-02-01
TWI597800B true TWI597800B (zh) 2017-09-01

Family

ID=49669153

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102118516A TWI597800B (zh) 2012-05-31 2013-05-24 氮化鎵對矽之直接晶圓接合

Country Status (6)

Country Link
US (1) US8796054B2 (enExample)
EP (1) EP2859592B1 (enExample)
CN (1) CN104471726B (enExample)
IN (1) IN2014DN10143A (enExample)
TW (1) TWI597800B (enExample)
WO (1) WO2013181053A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9690042B2 (en) * 2013-05-23 2017-06-27 Electronics And Telecommunications Research Institute Optical input/output device, optical electronic system including the same, and method of manufacturing the same
JP6176069B2 (ja) * 2013-11-13 2017-08-09 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、積層ｉｉｉ族窒化物複合基板、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
CN103887379B (zh) * 2014-03-28 2017-04-19 西安神光皓瑞光电科技有限公司 用湿法腐蚀减少GaN外延缺陷的方法
FR3029352B1 (fr) 2014-11-27 2017-01-06 Soitec Silicon On Insulator Procede d'assemblage de deux substrats
DE102015103323A1 (de) * 2015-03-06 2016-09-08 Infineon Technologies Austria Ag Verfahren zum Herstellen von Halbleitervorrichtungen durch Bonden einer Halbleiterscheibe auf ein Basissubstrat, zusammengesetzter Wafer und Halbleitervorrichtung
TWI645479B (zh) * 2015-05-13 2018-12-21 財團法人工業技術研究院 貼合結構、其製造方法及晶粒結構
CN115424918A (zh) * 2022-08-10 2022-12-02 中晟鲲鹏光电半导体有限公司 一种碳化硅与氮化镓键合的超薄晶圆制作工艺
WO2025079545A1 (ja) * 2023-10-12 2025-04-17 Ａｇｃ株式会社 接合用部材および接合体

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1988109B (zh) 2005-12-21 2012-03-21 弗赖贝格化合物原料有限公司 生产自支撑iii-n层和自支撑iii-n基底的方法
JP4756418B2 (ja) 2006-02-28 2011-08-24 公立大学法人大阪府立大学 単結晶窒化ガリウム基板の製造方法
JP2008004821A (ja) * 2006-06-23 2008-01-10 Sumco Corp 貼り合わせウェーハの製造方法
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
CN101960604B (zh) * 2008-03-13 2013-07-10 S.O.I.Tec绝缘体上硅技术公司 绝缘隐埋层中有带电区的衬底
TWI492275B (zh) 2008-04-10 2015-07-11 信越化學工業股份有限公司 The method of manufacturing the bonded substrate
WO2010036602A1 (en) 2008-09-26 2010-04-01 S.O.I.Tec Silicon On Insulator Technologies Method of forming a composite laser substrate
US8551862B2 (en) 2009-01-15 2013-10-08 Shin-Etsu Chemical Co., Ltd. Method of manufacturing laminated wafer by high temperature laminating method
JP2010192872A (ja) * 2009-01-23 2010-09-02 Sumitomo Electric Ind Ltd 半導体基板の製造方法、半導体デバイスの製造方法、半導体基板および半導体デバイス
US8367519B2 (en) * 2009-12-30 2013-02-05 Memc Electronic Materials, Inc. Method for the preparation of a multi-layered crystalline structure
US8440541B2 (en) * 2010-02-25 2013-05-14 Memc Electronic Materials, Inc. Methods for reducing the width of the unbonded region in SOI structures

Also Published As

Publication number Publication date
EP2859592A4 (en) 2016-03-02
EP2859592B1 (en) 2018-09-26
TW201405702A (zh) 2014-02-01
US8796054B2 (en) 2014-08-05
US20130320404A1 (en) 2013-12-05
CN104471726A (zh) 2015-03-25
EP2859592A1 (en) 2015-04-15
IN2014DN10143A (enExample) 2015-08-21
WO2013181053A1 (en) 2013-12-05
CN104471726B (zh) 2018-01-09

Similar Documents

Publication Publication Date Title
TWI597800B (zh) 氮化鎵對矽之直接晶圓接合
JP7001660B2 (ja) 電力およびｒｆ用途用の設計された基板構造
KR101335713B1 (ko) 접합 기판의 제조방법 및 접합 기판
US20070082465A1 (en) Method of fabricating GaN substrate
CN101292341A (zh) 绝缘体上应变硅结构的制造方法
US8461018B2 (en) Treatment for bonding interface stabilization
US20140235032A1 (en) Method for producing transparent soi wafer
KR20110086038A (ko) 헤테로 구조체를 제작하기 위한 사파이어 기판의 표면 준비
CN113097124B (zh) 异质集成GaN薄膜及GaN器件的制备方法
US9824891B1 (en) Method of manufacturing the thin film
CN103988285B (zh) 位于包含氧化物层的结构体中的键合界面的稳定化方法及所得结构体
CN101990697A (zh) 贴合基板的制造方法
TWI414021B (zh) 具有氮化銦鎵層之半導體裝置
US20120280367A1 (en) Method for manufacturing a semiconductor substrate
JP2018085536A (ja) 多層半導体デバイス作製時の低温層転写方法
EP2091074A1 (en) Method for preparing hydrophobic surfaces
CN1773677A (zh) 半导体基材及其制造方法
JP2013098572A (ja) 薄膜接合基板の製造方法
JP2017139266A (ja) 複合基板、半導体装置、およびこれらの製造方法
KR20070084075A (ko) 반도체 웨이퍼의 제조방법
WO2009106177A1 (en) Method of transferring a thin layer onto a support substrate
JP2015126052A (ja) 複合基板の製造方法
WO2009150503A1 (en) Method for preparing hydrophobic surfaces
BONDING 120 _+..... _ _ _ _
JP4690734B2 (ja) 単結晶ＳｉＣ基板の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees