TWI595658B - 電晶體、包含相同電晶體之可變電阻記憶元件及其製造方法 - Google Patents

電晶體、包含相同電晶體之可變電阻記憶元件及其製造方法 Download PDF

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TWI595658B
TWI595658B TW102130595A TW102130595A TWI595658B TW I595658 B TWI595658 B TW I595658B TW 102130595 A TW102130595 A TW 102130595A TW 102130595 A TW102130595 A TW 102130595A TW I595658 B TWI595658 B TW I595658B
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gate electrode
layer
gate
region
work function
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TW102130595A
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TW201434154A (zh
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朴南均
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愛思開海力士有限公司
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Description

電晶體、包含相同電晶體之可變電阻記憶元件及其製造方法
本發明之示例性具體實施例係關於一種半導體整合電路元件，尤其係關於一種電晶體、包含相同電晶體之可變電阻記憶元件及其製造方法。
隨著行動裝置、數位資訊通訊及消費電子產業的快速發展，預期現有電子電荷控制元件的研究會面臨到限制。因此，需要開發與現有電子電荷元件不同之新概念的新功能型記憶元件，尤其是具有大容量、超高速以及超低功耗之需求的下一代記憶元件。
現在，把一電阻元件當作一記憶介質來使用的電阻記憶元件已被建議作為下一代記憶元件，例如：相變隨機存取記憶體(phase-change random access memories,PCRAMs)、電阻隨機存取記憶體(resistance RAMs,ReRAMs)及磁阻隨機存取記憶體(magentoresistive RAMs,MRAMs)
該電阻記憶元件基本上可被配置一切換元件及一電阻元件，並根據該電阻元件的一狀態來記憶「0」或「1」。
即使在該電阻記憶元件中，第一優先仍係提高一整合密度並將大多數的記憶胞整合於一個狹窄的區域。
為了滿足這些需求，該電阻記憶元件採用了三維(three-dimensional, 3D)的垂直電晶體結構。
然而，即使在3D的垂直電晶體中，薄的閘極層仍是可能被需要的。因此，當一高電壓供應至一閘極時，一高電場係施加至一輕摻雜汲極(lightly doped drain,LDD)區，並且可能造成閘極引發汲極漏電(gate induced drain leakage,GIDL)。
根據本發明之一示例性具體實施例的一態樣，一電晶體可包括：一主動支柱，包括一通道區、形成於該通道區之一端的一源極、一輕摻雜汲極區與形成於該通道區之另一端的一汲極；一第一閘極電極，形成來圍繞該輕摻雜汲極區的周圍，且具有一第一功函數；以及一第二閘極電極，形成來被連接至該第一閘極電極並圍繞該通道區，且具有高於該第一功函數的一第二功函數。
根據本發明之一示例性具體實施例的另一態樣，一種可變電阻記憶元件可包括一垂直電晶體，該垂直電晶體包括：一主動支柱，包括一通道區、形成於該通道區之一端的一源極、一輕摻雜汲極區與形成於該通道區之另一端的一汲極；一第一閘極電極，形成來圍繞該輕摻雜汲極區的周圍，且具有一第一功函數；一第二閘極電極，形成來被連接至該第一閘極電極並圍繞該通道區，且具有高於該第一功函數的一第二功函數；以及一電阻記憶結構，連接至該垂直電晶體的汲極。
根據本發明之一示例性具體實施例的再另一態樣，一種可變電阻記憶元件的製造方法可包括：在一半導體基板中形成一源極區；在該源極區上形成一半導體層；將該半導體層圖案化以形成一主動支柱；形成一第一閘極 來圍繞該主動支柱；用一絕緣層圍繞該第一閘極的上部區而暴露該第一閘極的下部區；以及藉由提高暴露的第一閘極的一功函數以形成一第二閘極區。
這些及其他本發明之特徵、態樣、具體實施例將被描述於下面的實施方式。
100‧‧‧可變電阻記憶元件
101‧‧‧垂直電晶體
105‧‧‧半導體基板
110‧‧‧源極
120‧‧‧主動支柱
130‧‧‧硬質遮罩層
135‧‧‧閘極絕緣層
140‧‧‧第一閘極電極
142‧‧‧第一閘極電極
145‧‧‧第一絕緣層
150‧‧‧第二絕緣層
160‧‧‧第二閘極電極
163‧‧‧矽層
165‧‧‧第二閘極電極
167‧‧‧第二閘極電極
170‧‧‧下部電極
180‧‧‧電阻記憶層
185‧‧‧電阻記憶結構
200‧‧‧半導體基板
210‧‧‧溝槽
215‧‧‧閘極絕緣層
220‧‧‧第一閘極電極
230‧‧‧第二閘極電極
240‧‧‧絕緣層
250‧‧‧絕緣層
a‧‧‧厚度
b‧‧‧厚度
c‧‧‧預定長度
D‧‧‧汲極
LDD‧‧‧輕摻雜汲極區
S‧‧‧源極
本發明揭露的標的之上述及其他態樣、特徵及其他優點，將配合所附之圖式詳細描述，而被更清楚地暸解如後：第1圖係示出根據本發明之一示例性具體實施例的一種包括一垂直電晶體之可變電阻記憶元件的示意剖視圖。
第2圖至第5圖係依序示出根據本發明之一示例性具體實施例的一種可變記憶元件之一垂直電晶體的一製程之示意剖視圖。
第6圖係示出根據本發明之另一示例性具體實施例的一種包括一垂直電晶體之可變電阻記憶元件的示意剖視圖。
第7圖及第8圖係依序示出第6圖之一垂直電晶體的一製程之示意性剖視圖。
第9圖係示出根據本發明之另一示例性具體實施例的一垂直電晶體的示意圖。
第10圖係示出根據本發明之另一示例性具體實施例的一垂直電晶體的示意剖視圖。
在下文中，本發明之各種示例性具體實施例將參考所附之圖式來更詳細地描述
這裡所述之示例性具體實施例係參考示例性具體實施例(及內部 結構)之示意的剖面圖。故，作為結果的各種形狀變化(例如製造技術及/或公差)是可以預期的。因此，示例性具體實施例不應解釋為限制這裡所示區的特定形狀，而是可包括(例如來自製造之)形狀誤差的結果。在圖式中，為了清楚起見，層與區的長度跟尺寸可被誇大。在圖式中之相同的元件符號標記著相同的元件。
應該容易被理解的是，在本文中所揭露的「在...上」與「在...之上」應以最廣泛的方式解釋。「在...上」指的不只是「直接在...上」，亦可指的是在內部特徵或(一)層間的某東西上，且「在...之上」指的不只是「直接在...的頂部」，亦可指的是在內部特徵或(一)層間的某東西之上。應注意的是，於本說明書中的連接/耦合代表的不只是一構件直接耦合另一構件，亦可代表的是透過一內部構件的不直接耦合另一構件。此外，只要句子中沒特定的提到，一單數形包括一複數形。
參見第1圖，根據本發明之一示例性具體實施例的一種可變電阻記憶元件100可包括一垂直電晶體101及一電阻記憶結構185。
該垂直電晶體101可包括一主動支柱120、一第一閘極電極140及一第二閘極電極160。
一源極S可被提供於該主動支柱120之下並且一汲極D可被提供於該主動支柱120之上。該主動支柱120在該源極S與該汲極D之間來作為該垂直電晶體101的一通道區。此時，該主動支柱120可被解釋為包括該源極S的一結構，或是該主動支柱120可具有獨立地形成在該源極S上的一結構。該源極S以及該主動支柱120可為半導體層。另外，一輕摻雜汲極區LDD，其係為一個低濃度的雜質區，可被形成在主動支柱120並介於作為該通道區之主動 支柱120的一部分與該汲極D之間，因此一短通道效應可被減輕。
該第一閘極電極140可被形成來圍繞該主動支柱120之一上部(即形成該輕摻雜汲極區LDD處)的周圍。該第一閘極電極140可部分地與該汲極D的一部份重疊，但該第一閘極電極140可被實質地形成於相對該輕摻雜汲極區LDD之主動支柱120的一位置。
該第二閘極電極160可被連接至該第一閘極電極140，並且圍繞該主動支柱120之通道區。例如，該第二閘極電極160可被連接至該第一閘極電極140且位於該第一閘極電極140下。此時，該第一閘極電極140可包括具有一功函數低於該第二閘極電極160的一材料。也就是說，當重疊該輕摻雜汲極區LDD之第一閘極電極140的功函數係降低時，高電場特性所造成的GIDL可被減輕，故可改善該輕摻雜汲極區LDD及鄰近該輕摻雜汲極區LDD之汲極D的GIDL特性。
此時，一閘極絕緣層135可被插入於該第一閘極電極140、該第二閘極電極160與該主動支柱120之間。各種絕緣層(例如一金屬氧化層及一矽氧化層)可被使用作為該閘極絕緣層135。
該電阻記憶結構185可被配置一下部電極170及一電阻記憶層180。該下部電極170可為形成於該汲極D的一導電層，且提供一電流及一電壓至該電阻記憶層180。雖然第1圖並未示出，一歐姆層可基於該下部電極170的材料特性而被插入在該下部電極170與該汲極D之間。該電阻記憶層180可為根據提供自該下部電極170的電流及電壓而改變一電阻的一層。作為該電阻記憶層180，用於一電阻隨機存取記憶體(ReRAM)之材料的一PCMO層、用於一相變隨機存取記憶體(PCRAM)之材料的一硫化層、用於一磁阻隨機存取記憶體 (MRAM)之材料的一磁性層、一自旋轉力矩隨機存取記憶體(STTMRAM)之材料的一磁性反轉元件層，以及用於一聚合物隨機存取記憶體(PoRAM)之材料的一聚合物層或其類似物係被使用。
在該具體實施例之垂直電晶體中，該閘極電極係具有比該通道區中之功函數相對低的輕摻雜汲極區LDD中之功函數的一材料所形成，該輕摻雜汲極區LDD具有一較低GIDL障礙並且一高電場施加至該輕摻雜汲極區LDD。
如上所述，具有一相對低功函數之閘極電極係配置圍繞該輕摻雜汲極區LDD以補償根據該高電場施加的低GIDL障礙，從而減少漏電流。
一種包括一垂直電晶體之一可變電阻記憶元件的製造方法將參考第2圖至第5圖而被詳細描述。
參照第2圖，藉由植入雜質於一半導體基板105之一上部而在該半導體基板105中形成一源極110。一半導體層係形成在該源極110形成的半導體基板105。例如，該半導體層可為一雜質摻雜的多晶矽層或是向外生長之半導體基板105(形成該源極)的一層。一硬質遮罩層130(例如一氮化矽層)係沉積於該半導體層。該硬質遮罩層130之預定部分與該半導體層之預定部分係圖案化以形成複數個主動支柱120。一閘極絕緣層135係形成於該等主動支柱120的表面以及該半導體基板105的表面。作為該閘極絕緣層135，被氧化的一導電金屬例如矽(Si)、鉭(Ta)、鈦(Ti)、鋇鈦(BaTi)、鋯酸鋇(BaZr)、鋯(Zr)、鉿(Hf)、鑭(La)、鋁(Al)、釔(Y)、或矽化鋯(ZrSi)可作為一層被使用。一第一導電層係沉積在包含該閘極絕緣層135的半導體基板105，且非等向性地蝕刻來圍繞該主動支柱120。因此，一第一閘極電極140係形成在每一包覆該閘極絕緣層135之主動支 柱120的一外部週緣之上。此時，藉由非等向性過度蝕刻，該第一閘極電極140可被形成具有小於該主動支柱120的一高度。例如，作為該第一閘極電極140，一過渡金屬層包括一材料，例如鈦(Ti)、鉭(Ta)、鈷(Co)及鉑(Pt)可被使用。
如第3圖所示，一第一絕緣層145係形成以填滿該等主動支柱120間的一空間。接著，該第一絕緣層145係凹陷以暴露該第一閘極電極140的一上部區。同時，該第一絕緣層145的上部表面係位於相對於該主動支柱120的一通道形成區。一第二絕緣區150係形成以包覆該第一閘極電極140暴露的上部區。該第二絕緣區150係由具有與該第一絕緣層145不同的一蝕刻選擇率的一材料所形成。
參照第4圖，該第一絕緣層145係選擇性地移除以暴露該第一閘極電極140的一下部區。接著，氮離子係植入至暴露的第一閘極電極140中以形成由一金屬氮化層所形成的一第二閘極電極160，例如第5圖所述之氮化鈦(TiN)。如所周知，一耐火金屬層，例如一鈦層具有低於一金屬氮化層(例如一鈦氮層)的一功函數。因此，相對於一輕摻雜汲極區LDD之閘極電極的一部分係由具有一相對低之功函數的一材料所形成，從而減少因GIDL造成的漏電流。
接著，回去參照第1圖，在該主動支柱120的硬質遮罩層130係被移除，並且該輕摻雜汲極區LDD係藉由植入具有一低濃度的雜質進入該主動支柱120而形成。接著，具有一高濃度的雜質係植入該主動支柱120的輕摻雜汲極區LDD以定義一汲極D。
一下部電極170及一電阻記憶層180係依序形成在該汲極D以製成該可變電阻記憶元件。
與該金屬氮化層不同的一金屬矽化層可被使用當作該第二閘極 電極160。
也就是，如第6圖所示，圍繞該輕摻雜汲極區LDD的一第一閘極電極140係由上述之示例性具體實施例的一過渡金屬層所形成，且一第二閘極電極165可由在該第一閘極電極140下且具有高於該第一閘極電極140之功函數的一過渡金屬矽化層所形成。此時，該第二閘極電極165的一厚度b可大於該第一閘極電極140的一厚度a。
由於該過渡金屬層亦具有低於該過渡金屬矽化層的功函數，圍繞在具有微弱GIDL特性之輕摻雜汲極區LDD的漏電流可被減少。
在第6圖中所述之一種垂直電晶體的製造方法將參考第7圖及第8圖而詳述。在這裡，示例性具體實施例中之可變電阻記憶元件的某些製造方法與前述之示例性具體實施例中之可變電阻記憶元件於第1圖至第3圖的過程實質地相同。因此，與第3圖過程相同的過程將被描述。
參照第7圖，該第一絕緣層(第3圖的145)係選擇地移除以暴露該第一閘極電極140的一側壁。一矽層163係以一預定厚度沉積在該第一閘極電極140的一暴露表面上。該矽層163位於一第二絕緣層150下方形成。
參照第8圖，一熱處理係在該半導體基板105進行，使得該第一閘極電極140係與該矽層163接觸反應，以形成由一過渡金屬層形成的第二閘極電極165。此時，由於該第二閘極電極165係為透過該第一閘極電極140與該矽層163之熱反應而形成的一層，該矽層163的一厚度係被提供當做該第二閘極電極165的厚度。因此，該第二閘極電極165可具有大於該第一閘極電極140之厚度的一厚度。
如第9圖所示，第一閘極電極142及第二閘極電極167可被依 序地形成來圍繞一主動支柱120。
也就是，該第一閘極電極142係形成來圍繞包圍於該閘極絕緣層135之主動支柱120的一外部週緣。此時，重要的是該閘極電極142係形成不只重疊一輕摻雜汲極區LDD。
接著，該第二閘極167係形成來圍繞該第一閘極電極142的外部週緣。此時，該第二閘極167可藉由超過該第一閘極電極之一預定長度c來延伸，使得該第二閘極167重疊該輕摻雜汲極區LDD的一部分。因此，舉例來說，只有該絕緣層135的一部分係不插入該第一閘極電極142而存在於該輕摻雜汲極區LDD與該第二閘極167之間。在這裡，該第二閘極電極167可具有一高於該第一閘極電極142的一功函數。然而，在某些情況下，該第二閘極電極167可由具有一功函數相近或低於該第一閘極電極142之功函數的一材料所形成。
具有上述結構的垂直電晶體中，由於該第一閘極電極142係形成以具有相對低的功函數，並且介於該輕摻雜汲極區LDD與重疊該輕摻雜汲極區LDD的第二閘極電極167之間的一距離係增加，施加至該輕摻雜汲極區LDD的一高電場可被減緩或是由低GIDL造成的漏電流可被降低。
除了該垂直電晶體結構外，該雙閘極電極結構可被施加至一埋入的閘極電極層。
也就是，如第10圖所示，一溝槽210係形成在一半導體基板200。一源極S及一汲極D係形成在半導體基板200之溝槽210的兩側。
一第一電極220及一第二電極230可被形成在一閘極絕緣層215形成的溝槽210。該第一閘極220可被形成在該溝槽210的一內表面。該第一電 極220可被形成以實質位於該溝槽210的一下部，使得該第一閘極220可不重疊該源極S及該汲極D。
該第二閘極電極230可形成來填滿圍繞該第一電極220之溝槽210的內側。此時，該第二電極230可被形成以具有長於該第一電極220之高度的一高度，使得該第二電極230可重疊該源極S及該汲極D的部分。
雖然第10圖未示出，但對所屬技術領域之人係顯而易見的，如第2圖及第6圖所述之電組記憶結構185可被附加地形成。元件符號240及250代表絕緣層。
進而，圍繞汲極D之一區重疊該第二閘極電極230而無該第一閘極電極220的插入。因此，藉由到該閘極的實質地增加之高電場而影響圍饒該汲極D區的一距離，使得該GIDL效應可被減少。
此外，由於該第一閘極電極220係由具有一功函數低於該第二閘極電極230的一材料所形成，圍饒該汲極D之區，也就是對應該輕摻雜汲極區LDD之一區，的電場之一效應可進一步地被減緩。
另外，該第二閘極電極230可被形成來填滿被該第一閘極電極220圍繞之溝槽210內部。
具體如上所述，根據該等具體實施例，由於該閘極電極具有一相對低的功函數形成於該輕摻雜汲極區LDD周圍，一高電場施加造成的低GIDL障礙可被補償且該漏電流可被減少。
本發明在上文中之具體實施例係說明性的，本發明不被上述具體實施例所限制。各種置換物或等效物都是可能的，本發明並不限制任何種類的半導體元件。本發明所揭露之其他添加刪除或調整都將落入申請專利範圍的 範疇內。
100‧‧‧可變電阻記憶元件
101‧‧‧垂直電晶體
120‧‧‧主動支柱
135‧‧‧閘極絕緣層
140‧‧‧第一閘極電極
160‧‧‧第二閘極電極
170‧‧‧下部電極
180‧‧‧電阻記憶層
185‧‧‧電阻記憶結構
D‧‧‧汲極
LDD‧‧‧輕摻雜汲極區
S‧‧‧源極

Claims (21)

  1. 一種電晶體，係包括：一主動支柱，係包括一通道區、形成於該通道區之一端的一源極、一輕摻雜汲極區與形成於該通道區之另一端的一汲極；一第一閘極電極，係形成來圍繞該輕摻雜汲極區的一周圍，且具有一第一功函數；以及一第二閘極電極，係形成來被連接至該第一閘極電極並圍繞該通道區，且具有高於該第一功函數的一第二功函數。
  2. 如申請專利範圍第1項所述之電晶體，其中該第一閘極電極包括一過渡金屬層，該過渡金屬層包括選自鈦(Ti)、鉭(Ta)、鈷(Co)及鉑(Pt)之群組中的一種。
  3. 如申請專利範圍第2項所述之電晶體，其中該第二閘極電極包括一金屬氮化層。
  4. 如申請專利範圍第2項所述之電晶體，其中該第二閘極電極包括一過渡金屬矽化層。
  5. 如申請專利範圍第4項所述之電晶體，其中該第二閘極電極係形成具有厚度大於該第一閘極電極的一厚度。
  6. 如申請專利範圍第1項所述之電晶體，其中該第一閘極電極係形成於該主動支柱之一外部週緣，且該第二閘極電極係形成於該第一閘極電極之一外部週緣。
  7. 如申請專利範圍第6項所述之電晶體，其中該第一閘極電極係形成具有高度小於該第二閘極電極的一高度，且該第二閘極電極係形成來重疊於沒有該第一閘極電極插入之主動柱。
  8. 一種可變電阻記憶元件，係包括：一垂直電晶體，係包括：一主動支柱，係包括一通道區、形成於該通道區之一端的一源極、一輕摻雜汲極區與形成於該通道區之另一端的一汲極；一第一閘極電極，形成來圍繞該輕摻雜汲極區的一周圍，且具有一第一功函數；一第二閘極電極，形成來被連接至該第一閘極電極並圍繞該通道區，且具有高於該第一功函數的一第二功函數；以及一電阻記憶結構，係連接至該垂直電晶體的汲極。
  9. 如申請專利範圍第8項所述之可變電阻記憶元件，其中該第一閘極電極包括一過渡金屬層，該過渡金屬層包括選自鈦(Ti)、鉭(Ta)、鈷(Co)及鉑(Pt)之群組中的任何一種。
  10. 如申請專利範圍第8項所述之可變電阻記憶元件，其中該第二閘極電極包括一金屬氮化層。
  11. 如申請專利範圍第8項所述之可變電阻記憶元件，其中該該第二閘極電極包括一過渡金屬矽化層。
  12. 如申請專利範圍第8項所述之可變電阻記憶元件，其中該第二閘極電極係形成具有厚度大於該第一閘極電極的一厚度。
  13. 如申請專利範圍第8項所述之可變電阻記憶元件，其中該第一閘極電極係形成於該主動支柱之一外部週緣，且該第二閘極電極係形成於該第一閘極電極之一外部週緣。
  14. 如申請專利範圍第13項所述之可變電阻記憶元件，其中該第一閘極電極係 形成具有高度小於該第二閘極電極的一高度，且該第二閘極電極係形成來重疊於沒有該第一閘極電極插入之主動支柱。
  15. 如申請專利範圍第8項所述之可變電阻記憶元件，其中該電阻記憶結構包括：一下部電極，係形成於該汲極上；以及一電阻記憶層，係形成於該下部電極上。
  16. 如申請專利範圍第15項所述之可變電阻記憶元件，其中該電阻記憶層係包括選自包含用於一電阻隨機存取記憶體(ReRAM)之材料的一PCMO層、包含用於一相變隨機存取記憶體(PCRAM)之材料的一硫化層、包含用於一磁阻隨機存取記憶體(MRAM)之材料的一磁性層、包含用於一自旋轉力矩隨機存取記憶體(STTMRAM)之材料的一磁性反轉元件層，以及包含用於一聚合物隨機存取記憶體(PoRAM)之材料的一聚合物層之群組中的一種。
  17. 一種可變電阻記憶元件的製造方法，係包括：在一半導體基板中形成一源極區；在該源極區上形成一半導體層；將該半導體層圖案化以形成一主動支柱；形成一第一閘極來圍繞該主動支柱；用一絕緣層圍繞該第一閘極的一上部區而暴露該第一閘極的一下部區；以及藉由提高暴露之第一閘極的一功函數以形成一第二閘極區。
  18. 如申請專利範圍第17項所述之製造方法，其中該第二閘極區的形成包括注入氮離子進入暴露的第一閘極之下部區中。
  19. 如申請專利範圍第17項所述之製造方法，其中該第二閘極區的形成包括：於該第一閘極之暴露的下部區形成一矽層；以及藉由該第一閘極與該矽層作用而形成一矽層。
  20. 如申請專利範圍第17項所述之製造方法，更包括：於該主動支柱上形成一下部電極；以及於該下部電極上形成一電阻記憶層。
  21. 一種電晶體，包括：一主動支柱，係包括一通道區、形成於該通道區之一端的一源極、一汲極與形成於該通道區之另一端的一輕摻雜汲極區；一第一閘極電極，形成來圍繞該輕摻雜汲極區的周圍，且具有一第一功函數；以及一第二閘極電極，形成來被連接至該第一閘極電極，圍繞該通道區，且具有高於該第一功函數的一第二功函數。
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Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150020847A (ko) * 2013-08-19 2015-02-27 에스케이하이닉스 주식회사 3차원 반도체 장치, 이를 구비하는 저항 변화 메모리 장치, 및 그 제조방법
US20150097228A1 (en) * 2013-10-07 2015-04-09 Nanya Technology Corporation Method for manufacturing semiconductor device
JP5639317B1 (ja) 2013-11-06 2014-12-10 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Ｓｇｔを有する半導体装置と、その製造方法
US9373620B2 (en) 2014-09-12 2016-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Series connected transistor structure and method of manufacturing the same
KR20160121729A (ko) 2015-04-10 2016-10-20 에스케이하이닉스 주식회사 버티컬 트랜지스터 및 이를 구비한 저항 변화 메모리 장치
US9837470B2 (en) * 2015-04-10 2017-12-05 SK Hynix Inc. Method of manufacturing a semiconductor integrated circuit device including a transistor with a vertical channel
KR102476806B1 (ko) * 2016-04-01 2022-12-13 에스케이하이닉스 주식회사 강유전체막을 포함하는 반도체 메모리 장치
US9870957B2 (en) 2016-06-16 2018-01-16 Samsung Electronics Co., Ltd. Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFET
US10424515B2 (en) * 2016-06-30 2019-09-24 International Business Machines Corporation Vertical FET devices with multiple channel lengths
KR102537248B1 (ko) 2016-07-06 2023-05-30 삼성전자주식회사 3차원 반도체 메모리 장치
KR20180023453A (ko) 2016-08-26 2018-03-07 에스케이하이닉스 주식회사 나노 와이어-셀렉터를 구비한 반도체 집적 회로 장치의 제조방법
US10170616B2 (en) * 2016-09-19 2019-01-01 Globalfoundries Inc. Methods of forming a vertical transistor device
US9780100B1 (en) * 2016-09-23 2017-10-03 International Business Machines Corporation Vertical floating gate memory with variable channel doping profile
US10833193B2 (en) * 2016-09-30 2020-11-10 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor device, method of manufacturing the same and electronic device including the device
KR102511942B1 (ko) 2016-12-16 2023-03-23 에스케이하이닉스 주식회사 매립게이트구조를 구비한 반도체장치 및 그 제조 방법
FR3064399B1 (fr) * 2017-03-22 2019-05-03 Stmicroelectronics (Crolles 2) Sas Transistor quantique vertical
WO2018182729A1 (en) * 2017-03-31 2018-10-04 Intel Corporation Co-integration of on chip memory technologies
WO2018182730A1 (en) * 2017-03-31 2018-10-04 Intel Corporation A vertical 1t-1c dram array
CN108735743A (zh) * 2017-04-14 2018-11-02 上海磁宇信息科技有限公司 一种超高密度随机存储器制造方法
US10103147B1 (en) * 2017-05-01 2018-10-16 International Business Machines Corporation Vertical transport transistors with equal gate stack thicknesses
EP3404702A1 (en) * 2017-05-15 2018-11-21 IMEC vzw A method for forming vertical channel devices
KR102279732B1 (ko) * 2017-07-21 2021-07-22 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
WO2019046106A1 (en) * 2017-08-29 2019-03-07 Micron Technology, Inc. DEVICES AND SYSTEMS WITH CHAIN DRIVERS COMPRISING HIGH BANNED MATERIAL AND METHODS OF FORMATION
CN111095564A (zh) * 2017-09-12 2020-05-01 英特尔公司 具有包括晶态合金的金属接触部的半导体器件
JP6889074B2 (ja) * 2017-09-15 2021-06-18 キオクシア株式会社 集積回路装置
KR102377358B1 (ko) * 2017-10-16 2022-03-23 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
US10283565B1 (en) 2017-12-21 2019-05-07 International Business Machines Corporation Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element
KR102589667B1 (ko) * 2017-12-22 2023-10-17 삼성전자주식회사 반도체 장치
US20190244662A1 (en) * 2018-02-02 2019-08-08 Macronix International Co., Ltd. Sum-of-products array for neuromorphic computing system
US10614867B2 (en) * 2018-07-31 2020-04-07 Spin Memory, Inc. Patterning of high density small feature size pillar structures
CN111627819B (zh) * 2019-02-28 2023-10-17 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11233091B2 (en) * 2019-03-04 2022-01-25 International Business Machines Corporation Resistive memory cell having a single fin
CN112928025B (zh) * 2019-12-06 2023-11-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN111063685B (zh) * 2019-12-18 2023-04-14 电子科技大学 一种新型互补mos集成电路基本单元
US11145816B2 (en) * 2019-12-20 2021-10-12 International Business Machines Corporation Resistive random access memory cells integrated with vertical field effect transistor
US11581366B2 (en) * 2020-06-22 2023-02-14 Taiwan Semiconductor Manufacturing Company Limited Memory cell device with thin-film transistor selector and methods for forming the same
US11672128B2 (en) 2020-07-20 2023-06-06 Micron Technology, Inc. Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices
US11706927B2 (en) 2021-03-02 2023-07-18 Micron Technology, Inc. Memory devices and methods of forming memory devices
US11843056B2 (en) * 2021-03-30 2023-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
US11695072B2 (en) * 2021-07-09 2023-07-04 Micron Technology, Inc. Integrated assemblies and methods of forming integrated assemblies
US11917834B2 (en) 2021-07-20 2024-02-27 Micron Technology, Inc. Integrated assemblies and methods of forming integrated assemblies
CN113611671B (zh) * 2021-08-06 2023-04-07 长鑫存储技术有限公司 半导体结构及其制备方法
US11855148B2 (en) 2021-10-26 2023-12-26 International Business Machines Corporation Vertical field effect transistor with dual threshold voltage
CN116487327A (zh) * 2022-01-17 2023-07-25 长鑫存储技术有限公司 半导体结构及其制备方法
CN116230765B (zh) * 2022-03-30 2024-03-15 北京超弦存储器研究院 Mos管、存储器及其制备方法
CN115117160B (zh) * 2022-08-30 2023-01-31 睿力集成电路有限公司 半导体结构及其形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090001337A1 (en) * 2007-06-29 2009-01-01 Toshiharu Furukawa Phase Change Memory Cell with Vertical Transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020197810A1 (en) * 2001-06-21 2002-12-26 International Business Machines Corporation Mosfet having a variable gate oxide thickness and a variable gate work function, and a method for making the same
KR100576369B1 (ko) 2004-11-23 2006-05-03 삼성전자주식회사 전이 금속 산화막을 데이타 저장 물질막으로 채택하는비휘발성 기억소자의 프로그램 방법
KR100734266B1 (ko) * 2005-07-15 2007-07-02 삼성전자주식회사 콘택 저항이 개선된 수직 채널 반도체 소자 및 그 제조방법
US8188551B2 (en) * 2005-09-30 2012-05-29 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US9564200B2 (en) * 2007-04-10 2017-02-07 Snu R&Db Foundation Pillar-type field effect transistor having low leakage current
US7935598B2 (en) * 2007-12-24 2011-05-03 Hynix Semiconductor Inc. Vertical channel transistor and method of fabricating the same
JP2010232426A (ja) * 2009-03-27 2010-10-14 Renesas Electronics Corp 半導体装置およびその製造方法
US8866214B2 (en) * 2011-10-12 2014-10-21 International Business Machines Corporation Vertical transistor having an asymmetric gate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090001337A1 (en) * 2007-06-29 2009-01-01 Toshiharu Furukawa Phase Change Memory Cell with Vertical Transistor

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KR20140106903A (ko) 2014-09-04
TW201434154A (zh) 2014-09-01
US20160049446A1 (en) 2016-02-18
US9419055B2 (en) 2016-08-16
US20140239247A1 (en) 2014-08-28
CN104009082B (zh) 2018-03-30
CN104009082A (zh) 2014-08-27
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US20150171143A1 (en) 2015-06-18

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