TWI593118B - 增加金屬氧化物半導體層之導電性的方法 - Google Patents
增加金屬氧化物半導體層之導電性的方法 Download PDFInfo
- Publication number
- TWI593118B TWI593118B TW102115340A TW102115340A TWI593118B TW I593118 B TWI593118 B TW I593118B TW 102115340 A TW102115340 A TW 102115340A TW 102115340 A TW102115340 A TW 102115340A TW I593118 B TWI593118 B TW I593118B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal oxide
- oxide semiconductor
- semiconductor layer
- layer
- metal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 103
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 96
- 150000004706 metal oxides Chemical class 0.000 title claims description 96
- 238000000034 method Methods 0.000 title claims description 72
- 230000001965 increasing effect Effects 0.000 title claims description 26
- 238000006722 reduction reaction Methods 0.000 claims description 53
- 239000003638 chemical reducing agent Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 230000009467 reduction Effects 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 230000001939 inductive effect Effects 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 11
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 229960001296 zinc oxide Drugs 0.000 claims description 4
- 239000006227 byproduct Substances 0.000 claims description 3
- 229910052774 Proactinium Inorganic materials 0.000 claims description 2
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 37
- 239000011575 calcium Substances 0.000 description 35
- 229910052757 nitrogen Inorganic materials 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910052791 calcium Inorganic materials 0.000 description 14
- 230000008901 benefit Effects 0.000 description 13
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 12
- 229910052783 alkali metal Inorganic materials 0.000 description 8
- 150000001340 alkali metals Chemical class 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 4
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000004320 controlled atmosphere Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000012994 photoredox catalyst Substances 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052705 radium Inorganic materials 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- WVBQJMIQSCNHLH-UHFFFAOYSA-N sodium 1,2-dihydroacenaphthylen-2-ide Chemical compound [Na+].C1[CH-]c2cccc3cccc1c23 WVBQJMIQSCNHLH-UHFFFAOYSA-N 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- QLUMLEDLZDMGDW-UHFFFAOYSA-N sodium;1h-naphthalen-1-ide Chemical compound [Na+].[C-]1=CC=CC2=CC=CC=C21 QLUMLEDLZDMGDW-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261644855P | 2012-05-09 | 2012-05-09 | |
| US201261699146P | 2012-09-10 | 2012-09-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201403828A TW201403828A (zh) | 2014-01-16 |
| TWI593118B true TWI593118B (zh) | 2017-07-21 |
Family
ID=48289090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102115340A TWI593118B (zh) | 2012-05-09 | 2013-04-30 | 增加金屬氧化物半導體層之導電性的方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6077109B2 (fr) |
| KR (1) | KR102056407B1 (fr) |
| CN (1) | CN104272461B (fr) |
| TW (1) | TWI593118B (fr) |
| WO (1) | WO2013167374A1 (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI548100B (zh) * | 2015-01-08 | 2016-09-01 | 友達光電股份有限公司 | 薄膜電晶體、顯示面板以及其製造方法 |
| TWI661583B (zh) * | 2015-02-04 | 2019-06-01 | 億光電子工業股份有限公司 | Ｌｅｄ封裝結構及其製造方法 |
| KR102522595B1 (ko) | 2016-04-29 | 2023-04-17 | 삼성디스플레이 주식회사 | 트랜지스터 패널 및 그 제조 방법 |
| CN106024608B (zh) * | 2016-05-26 | 2019-04-02 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、衬底基板及显示装置 |
| CN106941082B (zh) * | 2017-03-21 | 2020-02-28 | 京东方科技集团股份有限公司 | 氧化物半导体及氧化物薄膜晶体管制备方法和显示面板 |
| WO2018215878A1 (fr) * | 2017-05-26 | 2018-11-29 | 株式会社半導体エネルギー研究所 | Dispositif à semi-conducteur et son procédé de production |
| CN107706199B (zh) * | 2017-09-30 | 2020-05-05 | 深圳市华星光电半导体显示技术有限公司 | 一种薄膜晶体管阵列基板的制作方法 |
| CN108172630A (zh) * | 2017-12-29 | 2018-06-15 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管及其制备方法 |
| US10818801B2 (en) * | 2017-12-29 | 2020-10-27 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin-film transistor and manufacturing method thereof |
| CN113972236A (zh) * | 2020-07-23 | 2022-01-25 | 合肥鑫晟光电科技有限公司 | 显示基板及其制备方法、显示装置 |
| CN112420849B (zh) * | 2020-11-09 | 2024-08-20 | 昆山龙腾光电股份有限公司 | 金属氧化物薄膜晶体管及其制作方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5475097A (en) * | 1977-11-26 | 1979-06-15 | Matsushita Electric Ind Co Ltd | Providing lower resistance of conductive material |
| KR100958006B1 (ko) * | 2008-06-18 | 2010-05-17 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| JP2010010175A (ja) * | 2008-06-24 | 2010-01-14 | Konica Minolta Holdings Inc | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
| US8367486B2 (en) * | 2009-02-05 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the transistor |
| EP2256795B1 (fr) * | 2009-05-29 | 2014-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Procédé de fabrication d'un dispositif à semi-conducteurs d'oxyde |
| EP2544237B1 (fr) * | 2009-09-16 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Transistor et dispositif d'affichage |
| JP5708910B2 (ja) * | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| JP5226154B2 (ja) * | 2010-06-01 | 2013-07-03 | シャープ株式会社 | 薄膜トランジスタ |
| WO2012002573A1 (fr) * | 2010-07-02 | 2012-01-05 | 合同会社先端配線材料研究所 | Dispositif semi-conducteur |
| JP2012015436A (ja) * | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
-
2013
- 2013-04-23 KR KR1020147029865A patent/KR102056407B1/ko active IP Right Grant
- 2013-04-23 CN CN201380024133.6A patent/CN104272461B/zh not_active Expired - Fee Related
- 2013-04-23 WO PCT/EP2013/058390 patent/WO2013167374A1/fr active Application Filing
- 2013-04-23 JP JP2015510711A patent/JP6077109B2/ja not_active Expired - Fee Related
- 2013-04-30 TW TW102115340A patent/TWI593118B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW201403828A (zh) | 2014-01-16 |
| KR20150018501A (ko) | 2015-02-23 |
| CN104272461A (zh) | 2015-01-07 |
| CN104272461B (zh) | 2017-08-08 |
| JP2015519745A (ja) | 2015-07-09 |
| KR102056407B1 (ko) | 2019-12-16 |
| WO2013167374A1 (fr) | 2013-11-14 |
| JP6077109B2 (ja) | 2017-02-08 |
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