TWI590458B - 多閘極薄膜電晶體 - Google Patents
多閘極薄膜電晶體 Download PDFInfo
- Publication number
- TWI590458B TWI590458B TW102125604A TW102125604A TWI590458B TW I590458 B TWI590458 B TW I590458B TW 102125604 A TW102125604 A TW 102125604A TW 102125604 A TW102125604 A TW 102125604A TW I590458 B TWI590458 B TW I590458B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate electrode
- semiconductor layer
- control signal
- charge
- conductive
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 200
- 239000000758 substrate Substances 0.000 claims description 50
- 238000012546 transfer Methods 0.000 claims description 49
- 230000004044 response Effects 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 24
- 239000002800 charge carrier Substances 0.000 claims description 18
- 238000009825 accumulation Methods 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 169
- 238000003860 storage Methods 0.000 description 83
- 239000000463 material Substances 0.000 description 29
- 230000003287 optical effect Effects 0.000 description 27
- 239000003990 capacitor Substances 0.000 description 23
- 230000005540 biological transmission Effects 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 230000003750 conditioning effect Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- IRLPACMLTUPBCL-KQYNXXCUSA-N 5'-adenylyl sulfate Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](COP(O)(=O)OS(O)(=O)=O)[C@@H](O)[C@H]1O IRLPACMLTUPBCL-KQYNXXCUSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005555 GaZnO Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13069—Thin film transistor [TFT]
Landscapes
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/557,039 US9105728B2 (en) | 2012-07-24 | 2012-07-24 | Multi-gate thin-film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201413962A TW201413962A (zh) | 2014-04-01 |
| TWI590458B true TWI590458B (zh) | 2017-07-01 |
Family
ID=48874539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102125604A TWI590458B (zh) | 2012-07-24 | 2013-07-17 | 多閘極薄膜電晶體 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9105728B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5946966B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101662733B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN104508829B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI590458B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2014018282A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8945981B2 (en) * | 2008-07-31 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP2887692B1 (en) * | 2013-12-20 | 2019-07-10 | Valencell, Inc. | A fitting system for a headphone with physiological sensor |
| IN2014DE00708A (cg-RX-API-DMAC7.html) * | 2014-03-12 | 2015-09-18 | Indian Inst Technology Kanpur | |
| US20150366678A1 (en) * | 2014-06-20 | 2015-12-24 | Fillauer Llc | Modular forearm |
| CN106662899B (zh) * | 2015-06-26 | 2018-05-11 | 沙特基础工业全球技术公司 | 用于触摸输入和触觉反馈应用的集成式压电悬臂致动器和晶体管 |
| GB201819570D0 (en) * | 2018-11-30 | 2019-01-16 | Univ Surrey | Multiple-gate transistor |
| KR102879031B1 (ko) | 2020-01-15 | 2025-10-29 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
| US11469321B2 (en) | 2020-02-27 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device |
| JP2025514022A (ja) * | 2022-05-16 | 2025-05-02 | オーレッドワークス エルエルシー | 静電気放電保護付き分割ｏｌｅｄ |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682834A (ja) * | 1992-09-02 | 1994-03-25 | Fuji Xerox Co Ltd | アクティブマトリクスパネル |
| US5929464A (en) | 1995-01-20 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-optical device |
| JP3409542B2 (ja) | 1995-11-21 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
| TW463384B (en) | 2000-06-15 | 2001-11-11 | Shr Min | Thin film transistor having subgate and Schottky source/drain and the manufacturing method thereof |
| US6580633B2 (en) | 2000-09-28 | 2003-06-17 | Seiko Epson Corporation | Nonvolatile semiconductor memory device |
| KR100485531B1 (ko) * | 2002-04-15 | 2005-04-27 | 엘지.필립스 엘시디 주식회사 | 다결정 실리콘 박막트랜지스터와 그 제조방법 |
| CN100449779C (zh) | 2002-10-07 | 2009-01-07 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US7800675B2 (en) | 2004-08-25 | 2010-09-21 | Aptina Imaging Corporation | Method of operating a storage gate pixel |
| KR100614653B1 (ko) | 2004-11-18 | 2006-08-22 | 삼성전자주식회사 | 백점 및 오버플로우의 문제없이 글로벌 노출이 가능한씨모스 이미지 센서 및 그 제조 방법 |
| KR100790586B1 (ko) | 2006-05-25 | 2008-01-02 | (주) 픽셀플러스 | Ｃｍｏｓ 이미지 센서 액티브 픽셀 및 그 신호 감지 방법 |
| US7459755B2 (en) | 2006-05-25 | 2008-12-02 | Walker Andrew J | Dual-gate semiconductor devices with enhanced scalability |
| US8102443B2 (en) | 2007-03-13 | 2012-01-24 | Renesas Electronics Corporation | CCD image sensor having charge storage section between photodiode section and charge transfer section |
| US20090072313A1 (en) | 2007-09-19 | 2009-03-19 | International Business Machines Corporation | Hardened transistors in soi devices |
| US20120153289A1 (en) * | 2009-09-01 | 2012-06-21 | Sharp Kabushiki Kaisha | Semiconductor device, active matrix substrate, and display device |
| KR101056229B1 (ko) | 2009-10-12 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치 |
| DE102010002455B4 (de) | 2010-02-26 | 2017-06-01 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Nichtflüchtiger Speichertransistor und Verfahren zu dessen Herstellung |
-
2012
- 2012-07-24 US US13/557,039 patent/US9105728B2/en active Active
-
2013
- 2013-07-12 JP JP2015524306A patent/JP5946966B2/ja not_active Expired - Fee Related
- 2013-07-12 CN CN201380038720.0A patent/CN104508829B/zh not_active Expired - Fee Related
- 2013-07-12 KR KR1020157004151A patent/KR101662733B1/ko not_active Expired - Fee Related
- 2013-07-12 WO PCT/US2013/050273 patent/WO2014018282A1/en not_active Ceased
- 2013-07-17 TW TW102125604A patent/TWI590458B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150034273A (ko) | 2015-04-02 |
| US20140027758A1 (en) | 2014-01-30 |
| KR101662733B1 (ko) | 2016-10-06 |
| JP5946966B2 (ja) | 2016-07-06 |
| CN104508829A (zh) | 2015-04-08 |
| TW201413962A (zh) | 2014-04-01 |
| US9105728B2 (en) | 2015-08-11 |
| WO2014018282A1 (en) | 2014-01-30 |
| JP2015524618A (ja) | 2015-08-24 |
| CN104508829B (zh) | 2016-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |