JP5946966B2 - マルチゲート薄膜トランジスタ - Google Patents

マルチゲート薄膜トランジスタ Download PDF

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Publication number
JP5946966B2
JP5946966B2 JP2015524306A JP2015524306A JP5946966B2 JP 5946966 B2 JP5946966 B2 JP 5946966B2 JP 2015524306 A JP2015524306 A JP 2015524306A JP 2015524306 A JP2015524306 A JP 2015524306A JP 5946966 B2 JP5946966 B2 JP 5946966B2
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Japan
Prior art keywords
gate electrode
semiconductor layer
control signal
conductive
response
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JP2015524306A
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English (en)
Japanese (ja)
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JP2015524618A5 (cg-RX-API-DMAC7.html
JP2015524618A (ja
Inventor
ジョン・ヒュンチュル・ホン
チョンホン・キム
ツェ−チン・フン
Original Assignee
クォルコム・メムズ・テクノロジーズ・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13069—Thin film transistor [TFT]

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2015524306A 2012-07-24 2013-07-12 マルチゲート薄膜トランジスタ Expired - Fee Related JP5946966B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/557,039 2012-07-24
US13/557,039 US9105728B2 (en) 2012-07-24 2012-07-24 Multi-gate thin-film transistor
PCT/US2013/050273 WO2014018282A1 (en) 2012-07-24 2013-07-12 Multi-gate thin-film transistor

Publications (3)

Publication Number Publication Date
JP2015524618A JP2015524618A (ja) 2015-08-24
JP2015524618A5 JP2015524618A5 (cg-RX-API-DMAC7.html) 2015-11-26
JP5946966B2 true JP5946966B2 (ja) 2016-07-06

Family

ID=48874539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015524306A Expired - Fee Related JP5946966B2 (ja) 2012-07-24 2013-07-12 マルチゲート薄膜トランジスタ

Country Status (6)

Country Link
US (1) US9105728B2 (cg-RX-API-DMAC7.html)
JP (1) JP5946966B2 (cg-RX-API-DMAC7.html)
KR (1) KR101662733B1 (cg-RX-API-DMAC7.html)
CN (1) CN104508829B (cg-RX-API-DMAC7.html)
TW (1) TWI590458B (cg-RX-API-DMAC7.html)
WO (1) WO2014018282A1 (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2887692B1 (en) * 2013-12-20 2019-07-10 Valencell, Inc. A fitting system for a headphone with physiological sensor
IN2014DE00708A (cg-RX-API-DMAC7.html) * 2014-03-12 2015-09-18 Indian Inst Technology Kanpur
US20150366678A1 (en) * 2014-06-20 2015-12-24 Fillauer Llc Modular forearm
CN106662899B (zh) * 2015-06-26 2018-05-11 沙特基础工业全球技术公司 用于触摸输入和触觉反馈应用的集成式压电悬臂致动器和晶体管
GB201819570D0 (en) * 2018-11-30 2019-01-16 Univ Surrey Multiple-gate transistor
KR102879031B1 (ko) 2020-01-15 2025-10-29 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US11469321B2 (en) 2020-02-27 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
JP2025514022A (ja) * 2022-05-16 2025-05-02 オーレッドワークス エルエルシー 静電気放電保護付き分割ｏｌｅｄ

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682834A (ja) * 1992-09-02 1994-03-25 Fuji Xerox Co Ltd アクティブマトリクスパネル
US5929464A (en) 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
JP3409542B2 (ja) 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法
TW463384B (en) 2000-06-15 2001-11-11 Shr Min Thin film transistor having subgate and Schottky source/drain and the manufacturing method thereof
US6580633B2 (en) 2000-09-28 2003-06-17 Seiko Epson Corporation Nonvolatile semiconductor memory device
KR100485531B1 (ko) * 2002-04-15 2005-04-27 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막트랜지스터와 그 제조방법
CN100449779C (zh) 2002-10-07 2009-01-07 株式会社半导体能源研究所 半导体器件及其制造方法
US7800675B2 (en) 2004-08-25 2010-09-21 Aptina Imaging Corporation Method of operating a storage gate pixel
KR100614653B1 (ko) 2004-11-18 2006-08-22 삼성전자주식회사 백점 및 오버플로우의 문제없이 글로벌 노출이 가능한씨모스 이미지 센서 및 그 제조 방법
KR100790586B1 (ko) 2006-05-25 2008-01-02 (주) 픽셀플러스 Ｃｍｏｓ 이미지 센서 액티브 픽셀 및 그 신호 감지 방법
US7459755B2 (en) 2006-05-25 2008-12-02 Walker Andrew J Dual-gate semiconductor devices with enhanced scalability
US8102443B2 (en) 2007-03-13 2012-01-24 Renesas Electronics Corporation CCD image sensor having charge storage section between photodiode section and charge transfer section
US20090072313A1 (en) 2007-09-19 2009-03-19 International Business Machines Corporation Hardened transistors in soi devices
US20120153289A1 (en) * 2009-09-01 2012-06-21 Sharp Kabushiki Kaisha Semiconductor device, active matrix substrate, and display device
KR101056229B1 (ko) 2009-10-12 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치
DE102010002455B4 (de) 2010-02-26 2017-06-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Nichtflüchtiger Speichertransistor und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
KR20150034273A (ko) 2015-04-02
US20140027758A1 (en) 2014-01-30
KR101662733B1 (ko) 2016-10-06
TWI590458B (zh) 2017-07-01
CN104508829A (zh) 2015-04-08
TW201413962A (zh) 2014-04-01
US9105728B2 (en) 2015-08-11
WO2014018282A1 (en) 2014-01-30
JP2015524618A (ja) 2015-08-24
CN104508829B (zh) 2016-10-26

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