JP2015524618A5 - - Google Patents
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- Publication number
- JP2015524618A5 JP2015524618A5 JP2015524306A JP2015524306A JP2015524618A5 JP 2015524618 A5 JP2015524618 A5 JP 2015524618A5 JP 2015524306 A JP2015524306 A JP 2015524306A JP 2015524306 A JP2015524306 A JP 2015524306A JP 2015524618 A5 JP2015524618 A5 JP 2015524618A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- gate electrode
- control signal
- conductive
- response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 66
- 239000002800 charge carrier Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- 238000009825 accumulation Methods 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/557,039 | 2012-07-24 | ||
| US13/557,039 US9105728B2 (en) | 2012-07-24 | 2012-07-24 | Multi-gate thin-film transistor |
| PCT/US2013/050273 WO2014018282A1 (en) | 2012-07-24 | 2013-07-12 | Multi-gate thin-film transistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015524618A JP2015524618A (ja) | 2015-08-24 |
| JP2015524618A5 true JP2015524618A5 (cg-RX-API-DMAC7.html) | 2015-11-26 |
| JP5946966B2 JP5946966B2 (ja) | 2016-07-06 |
Family
ID=48874539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015524306A Expired - Fee Related JP5946966B2 (ja) | 2012-07-24 | 2013-07-12 | マルチゲート薄膜トランジスタ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9105728B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5946966B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101662733B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN104508829B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI590458B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2014018282A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8945981B2 (en) * | 2008-07-31 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP2887692B1 (en) * | 2013-12-20 | 2019-07-10 | Valencell, Inc. | A fitting system for a headphone with physiological sensor |
| IN2014DE00708A (cg-RX-API-DMAC7.html) * | 2014-03-12 | 2015-09-18 | Indian Inst Technology Kanpur | |
| US20150366678A1 (en) * | 2014-06-20 | 2015-12-24 | Fillauer Llc | Modular forearm |
| CN106662899B (zh) * | 2015-06-26 | 2018-05-11 | 沙特基础工业全球技术公司 | 用于触摸输入和触觉反馈应用的集成式压电悬臂致动器和晶体管 |
| GB201819570D0 (en) * | 2018-11-30 | 2019-01-16 | Univ Surrey | Multiple-gate transistor |
| KR102879031B1 (ko) | 2020-01-15 | 2025-10-29 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
| US11469321B2 (en) | 2020-02-27 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device |
| JP2025514022A (ja) * | 2022-05-16 | 2025-05-02 | オーレッドワークス エルエルシー | 静電気放電保護付き分割ｏｌｅｄ |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682834A (ja) * | 1992-09-02 | 1994-03-25 | Fuji Xerox Co Ltd | アクティブマトリクスパネル |
| US5929464A (en) | 1995-01-20 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-optical device |
| JP3409542B2 (ja) | 1995-11-21 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
| TW463384B (en) | 2000-06-15 | 2001-11-11 | Shr Min | Thin film transistor having subgate and Schottky source/drain and the manufacturing method thereof |
| US6580633B2 (en) | 2000-09-28 | 2003-06-17 | Seiko Epson Corporation | Nonvolatile semiconductor memory device |
| KR100485531B1 (ko) * | 2002-04-15 | 2005-04-27 | 엘지.필립스 엘시디 주식회사 | 다결정 실리콘 박막트랜지스터와 그 제조방법 |
| CN100449779C (zh) | 2002-10-07 | 2009-01-07 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US7800675B2 (en) | 2004-08-25 | 2010-09-21 | Aptina Imaging Corporation | Method of operating a storage gate pixel |
| KR100614653B1 (ko) | 2004-11-18 | 2006-08-22 | 삼성전자주식회사 | 백점 및 오버플로우의 문제없이 글로벌 노출이 가능한씨모스 이미지 센서 및 그 제조 방법 |
| KR100790586B1 (ko) | 2006-05-25 | 2008-01-02 | (주) 픽셀플러스 | Ｃｍｏｓ 이미지 센서 액티브 픽셀 및 그 신호 감지 방법 |
| US7459755B2 (en) | 2006-05-25 | 2008-12-02 | Walker Andrew J | Dual-gate semiconductor devices with enhanced scalability |
| US8102443B2 (en) | 2007-03-13 | 2012-01-24 | Renesas Electronics Corporation | CCD image sensor having charge storage section between photodiode section and charge transfer section |
| US20090072313A1 (en) | 2007-09-19 | 2009-03-19 | International Business Machines Corporation | Hardened transistors in soi devices |
| US20120153289A1 (en) * | 2009-09-01 | 2012-06-21 | Sharp Kabushiki Kaisha | Semiconductor device, active matrix substrate, and display device |
| KR101056229B1 (ko) | 2009-10-12 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치 |
| DE102010002455B4 (de) | 2010-02-26 | 2017-06-01 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Nichtflüchtiger Speichertransistor und Verfahren zu dessen Herstellung |
-
2012
- 2012-07-24 US US13/557,039 patent/US9105728B2/en active Active
-
2013
- 2013-07-12 JP JP2015524306A patent/JP5946966B2/ja not_active Expired - Fee Related
- 2013-07-12 CN CN201380038720.0A patent/CN104508829B/zh not_active Expired - Fee Related
- 2013-07-12 KR KR1020157004151A patent/KR101662733B1/ko not_active Expired - Fee Related
- 2013-07-12 WO PCT/US2013/050273 patent/WO2014018282A1/en not_active Ceased
- 2013-07-17 TW TW102125604A patent/TWI590458B/zh not_active IP Right Cessation
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