TWI584364B - Substrate liquid processing device and substrate liquid treatment method - Google Patents

Substrate liquid processing device and substrate liquid treatment method Download PDF

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Publication number
TWI584364B
TWI584364B TW103121008A TW103121008A TWI584364B TW I584364 B TWI584364 B TW I584364B TW 103121008 A TW103121008 A TW 103121008A TW 103121008 A TW103121008 A TW 103121008A TW I584364 B TWI584364 B TW I584364B
Authority
TW
Taiwan
Prior art keywords
substrate
liquid
processing
treatment liquid
treatment
Prior art date
Application number
TW103121008A
Other languages
English (en)
Chinese (zh)
Other versions
TW201515081A (zh
Inventor
Shigehisa Inoue
Daisuke Nakayama
Katsufumi Matsuki
Takuro Masuzumi
Yuki Yoshida
Meitoku Aibara
Hiromi Kiyose
Takashi Uno
Hirotaka Maruyama
Kazuya Koyama
Takasi Nakazawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201515081A publication Critical patent/TW201515081A/zh
Application granted granted Critical
Publication of TWI584364B publication Critical patent/TWI584364B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW103121008A 2013-06-21 2014-06-18 Substrate liquid processing device and substrate liquid treatment method TWI584364B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013130883 2013-06-21
JP2014086639A JP6225067B2 (ja) 2013-06-21 2014-04-18 基板液処理装置及び基板液処理方法

Publications (2)

Publication Number Publication Date
TW201515081A TW201515081A (zh) 2015-04-16
TWI584364B true TWI584364B (zh) 2017-05-21

Family

ID=52109894

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103121008A TWI584364B (zh) 2013-06-21 2014-06-18 Substrate liquid processing device and substrate liquid treatment method

Country Status (4)

Country Link
US (1) US20140373877A1 (enExample)
JP (1) JP6225067B2 (enExample)
KR (1) KR102251256B1 (enExample)
TW (1) TWI584364B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170207079A1 (en) * 2016-01-15 2017-07-20 United Microelectronics Corp. Substrate cleaning method
US10388537B2 (en) 2016-04-15 2019-08-20 Samsung Electronics Co., Ltd. Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same
KR20170128801A (ko) 2016-05-16 2017-11-24 삼성전자주식회사 기판 세정 방법 및 이를 수행하기 위한 장치
JP6980457B2 (ja) * 2017-08-23 2021-12-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
KR102862397B1 (ko) 2020-09-18 2025-09-22 삼성전자주식회사 기판 세정 방법 및 그를 포함하는 기판 제조 방법
TW202331909A (zh) * 2021-12-21 2023-08-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法

Citations (2)

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TW200739710A (en) * 2006-04-11 2007-10-16 Dainippon Screen Mfg Substrate processing method and substrate processing apparatus
US20100124823A1 (en) * 2008-11-20 2010-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Novel method for removing dummy poly in a gate last process

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KR100202761B1 (ko) * 1995-06-09 1999-06-15 니시무로 타이죠 반도체 기판의 세정 방법 및 세정 장치
US6348289B1 (en) * 1999-08-03 2002-02-19 Advanced Micro Devices, Inc. System and method for controlling polysilicon feature critical dimension during processing
US7364625B2 (en) * 2000-05-30 2008-04-29 Fsi International, Inc. Rinsing processes and equipment
JP4046486B2 (ja) * 2001-06-13 2008-02-13 Ｎｅｃエレクトロニクス株式会社 洗浄水及びウエハの洗浄方法
JP4053800B2 (ja) * 2002-03-25 2008-02-27 東京エレクトロン株式会社 基板処理装置
US6852173B2 (en) * 2002-04-05 2005-02-08 Boc, Inc. Liquid-assisted cryogenic cleaning
JP4702920B2 (ja) * 2002-11-12 2011-06-15 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP4312542B2 (ja) * 2003-07-29 2009-08-12 東京エレクトロン株式会社 ２流体ノズル装置、洗浄処理装置、およびミスト発生方法
WO2006035864A1 (ja) * 2004-09-30 2006-04-06 Shin-Etsu Handotai Co., Ltd. Ｓｏｉウエーハの洗浄方法
US7767026B2 (en) * 2005-03-29 2010-08-03 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
JP2006286665A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 電子デバイス洗浄方法及び電子デバイス洗浄装置
KR100682538B1 (ko) * 2006-02-07 2007-02-15 삼성전자주식회사 반도체 웨이퍼 세정설비 및 세정방법
JP2007311559A (ja) * 2006-05-18 2007-11-29 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2008226900A (ja) * 2007-03-08 2008-09-25 Hitachi Kokusai Electric Inc 基板洗浄方法、半導体装置の製造方法及び基板洗浄装置。
WO2009072529A1 (ja) * 2007-12-04 2009-06-11 Mitsubishi Chemical Corporation 半導体デバイス用基板の洗浄方法及び洗浄液
US20100258142A1 (en) * 2009-04-14 2010-10-14 Mark Naoshi Kawaguchi Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate
KR101044409B1 (ko) * 2009-05-27 2011-06-27 세메스 주식회사 기판 세정 방법
JP2011192779A (ja) * 2010-03-15 2011-09-29 Kurita Water Ind Ltd 電子材料の洗浄方法および洗浄システム
CN110189995A (zh) * 2010-12-10 2019-08-30 东京毅力科创Fsi公司 用于从衬底选择性地移除氮化物的方法
KR101907510B1 (ko) * 2011-11-07 2018-10-16 삼성전자주식회사 기판 세척 방법 및 기판 세척 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200739710A (en) * 2006-04-11 2007-10-16 Dainippon Screen Mfg Substrate processing method and substrate processing apparatus
US20100124823A1 (en) * 2008-11-20 2010-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Novel method for removing dummy poly in a gate last process

Also Published As

Publication number Publication date
JP6225067B2 (ja) 2017-11-01
US20140373877A1 (en) 2014-12-25
KR102251256B1 (ko) 2021-05-11
KR20140148330A (ko) 2014-12-31
TW201515081A (zh) 2015-04-16
JP2015026814A (ja) 2015-02-05

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