TWI583028B - 具有光形調整結構之發光裝置及其製造方法 - Google Patents

具有光形調整結構之發光裝置及其製造方法 Download PDF

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Publication number
TWI583028B
TWI583028B TW105104034A TW105104034A TWI583028B TW I583028 B TWI583028 B TW I583028B TW 105104034 A TW105104034 A TW 105104034A TW 105104034 A TW105104034 A TW 105104034A TW I583028 B TWI583028 B TW I583028B
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TW
Taiwan
Prior art keywords
light
structures
emitting device
scattering
forming
Prior art date
Application number
TW105104034A
Other languages
English (en)
Chinese (zh)
Other versions
TW201729436A (zh
Inventor
傑 陳
王琮璽
Original Assignee
行家光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 行家光電股份有限公司 filed Critical 行家光電股份有限公司
Priority to TW105104034A priority Critical patent/TWI583028B/zh
Priority to JP2017017728A priority patent/JP6622735B2/ja
Priority to US15/423,513 priority patent/US10797209B2/en
Priority to EP20173969.5A priority patent/EP3734675A1/en
Priority to KR1020170015622A priority patent/KR102210462B1/ko
Priority to EP17154536.1A priority patent/EP3203534B1/en
Application granted granted Critical
Publication of TWI583028B publication Critical patent/TWI583028B/zh
Publication of TW201729436A publication Critical patent/TW201729436A/zh
Priority to KR1020180153435A priority patent/KR20180132018A/ko
Priority to JP2019211691A priority patent/JP7016467B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Optical Filters (AREA)
TW105104034A 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法 TWI583028B (zh)

Priority Applications (8)

Application Number Priority Date Filing Date Title
TW105104034A TWI583028B (zh) 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法
JP2017017728A JP6622735B2 (ja) 2016-02-05 2017-02-02 ビーム成形構造体を備えた発光素子およびその製造方法
US15/423,513 US10797209B2 (en) 2016-02-05 2017-02-02 Light emitting device with beam shaping structure and manufacturing method of the same
EP20173969.5A EP3734675A1 (en) 2016-02-05 2017-02-03 Light emitting device with beam shaping structure and manufacturing method of the same
KR1020170015622A KR102210462B1 (ko) 2016-02-05 2017-02-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법
EP17154536.1A EP3203534B1 (en) 2016-02-05 2017-02-03 Light emitting device with beam shaping structure and manufacturing method of the same
KR1020180153435A KR20180132018A (ko) 2016-02-05 2018-12-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법
JP2019211691A JP7016467B2 (ja) 2016-02-05 2019-11-22 ビーム成形構造体を備えた発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105104034A TWI583028B (zh) 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法

Publications (2)

Publication Number Publication Date
TWI583028B true TWI583028B (zh) 2017-05-11
TW201729436A TW201729436A (zh) 2017-08-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW105104034A TWI583028B (zh) 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法

Country Status (3)

Country Link
JP (2) JP6622735B2 (ja)
KR (2) KR102210462B1 (ja)
TW (1) TWI583028B (ja)

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US10879434B2 (en) 2017-09-08 2020-12-29 Maven Optronics Co., Ltd. Quantum dot-based color-converted light emitting device and method for manufacturing the same
TWI658610B (zh) * 2017-09-08 2019-05-01 Maven Optronics Co., Ltd. 應用量子點色彩轉換之發光裝置及其製造方法
JP7425750B2 (ja) * 2018-12-27 2024-01-31 デンカ株式会社 蛍光体基板、発光基板及び照明装置
CN113228314A (zh) 2018-12-27 2021-08-06 电化株式会社 荧光体基板、发光基板以及照明装置
WO2020137763A1 (ja) 2018-12-27 2020-07-02 デンカ株式会社 蛍光体基板、発光基板及び照明装置
EP3905347B1 (en) 2018-12-27 2024-02-21 Denka Company Limited Light-emitting substrate, and lighting device
CN113228313A (zh) 2018-12-27 2021-08-06 电化株式会社 荧光体基板、发光基板以及照明装置
KR102363199B1 (ko) * 2019-05-10 2022-02-15 덕산하이메탈(주) 복합 굴절율 도막 조성물 및 이를 이용한 도막
JP7539296B2 (ja) 2020-10-21 2024-08-23 シャープ福山レーザー株式会社 半導体モジュール

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TW200505054A (en) * 2003-05-01 2005-02-01 Cree Inc Multiple component solid state white light
TW201342669A (zh) * 2011-12-02 2013-10-16 Hitachi Appliances Inc 照明裝置
TW201431124A (zh) * 2013-01-22 2014-08-01 矽品精密工業股份有限公司 發光二極體封裝件及其製法
TW201501367A (zh) * 2013-05-16 2015-01-01 Nihon Ceratec Co Ltd 發光裝置
CN105161609A (zh) * 2015-09-24 2015-12-16 晶科电子（广州）有限公司 一种芯片级led光源模组及其制作方法

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US7791093B2 (en) * 2007-09-04 2010-09-07 Koninklijke Philips Electronics N.V. LED with particles in encapsulant for increased light extraction and non-yellow off-state color
WO2009069671A1 (ja) * 2007-11-29 2009-06-04 Nichia Corporation 発光装置及びその製造方法
KR20110066202A (ko) * 2008-10-01 2011-06-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 증가된 광 추출 및 황색이 아닌 오프 상태 컬러를 위한 인캡슐런트 내의 입자들을 갖는 ｌｅｄ
WO2011099384A1 (ja) * 2010-02-09 2011-08-18 日亜化学工業株式会社 発光装置および発光装置の製造方法
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US9144118B2 (en) * 2011-01-20 2015-09-22 Sharp Kabushiki Kaisha Light-emitting device, lighting device, display device, and method for manufacturing light-emitting device
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TW200505054A (en) * 2003-05-01 2005-02-01 Cree Inc Multiple component solid state white light
TW201342669A (zh) * 2011-12-02 2013-10-16 Hitachi Appliances Inc 照明裝置
TW201431124A (zh) * 2013-01-22 2014-08-01 矽品精密工業股份有限公司 發光二極體封裝件及其製法
TW201501367A (zh) * 2013-05-16 2015-01-01 Nihon Ceratec Co Ltd 發光裝置
CN105161609A (zh) * 2015-09-24 2015-12-16 晶科电子（广州）有限公司 一种芯片级led光源模组及其制作方法

Also Published As

Publication number Publication date
TW201729436A (zh) 2017-08-16
JP6622735B2 (ja) 2019-12-18
KR20180132018A (ko) 2018-12-11
JP2017175118A (ja) 2017-09-28
KR102210462B1 (ko) 2021-02-02
JP7016467B2 (ja) 2022-02-07
KR20170093735A (ko) 2017-08-16
JP2020053690A (ja) 2020-04-02

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