KR102210462B1 - 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법 - Google Patents

빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법 Download PDF

Info

Publication number
KR102210462B1
KR102210462B1 KR1020170015622A KR20170015622A KR102210462B1 KR 102210462 B1 KR102210462 B1 KR 102210462B1 KR 1020170015622 A KR1020170015622 A KR 1020170015622A KR 20170015622 A KR20170015622 A KR 20170015622A KR 102210462 B1 KR102210462 B1 KR 102210462B1
Authority
KR
South Korea
Prior art keywords
light
emitting device
forming
edge
light emitting
Prior art date
Application number
KR1020170015622A
Other languages
English (en)
Korean (ko)
Other versions
KR20170093735A (ko
Inventor
쳔 치에
왕 충-시
Original Assignee
마븐 옵트로닉스 씨오., 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마븐 옵트로닉스 씨오., 엘티디. filed Critical 마븐 옵트로닉스 씨오., 엘티디.
Publication of KR20170093735A publication Critical patent/KR20170093735A/ko
Application granted granted Critical
Publication of KR102210462B1 publication Critical patent/KR102210462B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Optical Filters (AREA)
KR1020170015622A 2016-02-05 2017-02-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법 KR102210462B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW105104034 2016-02-05
TW105104034A TWI583028B (zh) 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180153435A Division KR20180132018A (ko) 2016-02-05 2018-12-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20170093735A KR20170093735A (ko) 2017-08-16
KR102210462B1 true KR102210462B1 (ko) 2021-02-02

Family

ID=59367327

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020170015622A KR102210462B1 (ko) 2016-02-05 2017-02-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법
KR1020180153435A KR20180132018A (ko) 2016-02-05 2018-12-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020180153435A KR20180132018A (ko) 2016-02-05 2018-12-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법

Country Status (3)

Country Link
JP (2) JP6622735B2 (ja)
KR (2) KR102210462B1 (ja)
TW (1) TWI583028B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI658610B (zh) * 2017-09-08 2019-05-01 Maven Optronics Co., Ltd. 應用量子點色彩轉換之發光裝置及其製造方法
US10879434B2 (en) 2017-09-08 2020-12-29 Maven Optronics Co., Ltd. Quantum dot-based color-converted light emitting device and method for manufacturing the same
EP3905349B1 (en) * 2018-12-27 2024-02-07 Denka Company Limited Light-emitting substrate, and lighting device
WO2020137764A1 (ja) 2018-12-27 2020-07-02 デンカ株式会社 蛍光体基板、発光基板及び照明装置
US20220059730A1 (en) * 2018-12-27 2022-02-24 Denka Company Limited Phosphor substrate, light emitting substrate, and lighting device
KR20210106433A (ko) 2018-12-27 2021-08-30 덴카 주식회사 형광체 기판, 발광 기판 및 조명 장치
KR102363199B1 (ko) * 2019-05-10 2022-02-15 덕산하이메탈(주) 복합 굴절율 도막 조성물 및 이를 이용한 도막
JP7539296B2 (ja) 2020-10-21 2024-08-23 シャープ福山レーザー株式会社 半導体モジュール

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090057699A1 (en) * 2007-09-04 2009-03-05 Philips Lumileds Lighting Company, Llc LED with Particles in Encapsulant for Increased Light Extraction and Non-Yellow Off-State Color
US20120319563A1 (en) * 2011-06-17 2012-12-20 Citizen Holdings Co., Ltd. Light-emitting device and manufacturing method of the same
US20140151734A1 (en) * 2011-07-19 2014-06-05 Panasonic Corporation Light-emitting device and method for manufacturing same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
JP2006310568A (ja) 2005-04-28 2006-11-09 Toyoda Gosei Co Ltd 発光装置
RU2489774C2 (ru) * 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
KR20110066202A (ko) * 2008-10-01 2011-06-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 증가된 광 추출 및 황색이 아닌 오프 상태 컬러를 위한 인캡슐런트 내의 입자들을 갖는 ｌｅｄ
EP3547380B1 (en) * 2010-02-09 2023-12-20 Nichia Corporation Light emitting device
JP5566785B2 (ja) 2010-06-22 2014-08-06 日東電工株式会社 複合シート
JP2012094578A (ja) * 2010-10-25 2012-05-17 Citizen Holdings Co Ltd 半導体発光装置の製造方法
KR20120061376A (ko) * 2010-12-03 2012-06-13 삼성엘이디 주식회사 반도체 발광 소자에 형광체를 도포하는 방법
CN103299441B (zh) * 2011-01-20 2016-08-10 夏普株式会社 发光装置、照明装置、显示装置以及发光装置的制造方法
JP2012174941A (ja) 2011-02-22 2012-09-10 Panasonic Corp 発光装置
DE102011116752A1 (de) * 2011-10-24 2013-04-25 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Streumittel
JP2013118235A (ja) * 2011-12-02 2013-06-13 Hitachi Appliances Inc 照明装置
DE102012200973A1 (de) 2012-01-24 2013-07-25 Osram Opto Semiconductors Gmbh Leuchte und verfahren zur herstellung einer leuchte
WO2013137356A1 (ja) * 2012-03-13 2013-09-19 シチズンホールディングス株式会社 半導体発光装置及びその製造方法
US9773950B2 (en) * 2012-04-06 2017-09-26 Ctlab Co. Ltd. Semiconductor device structure
JP5976406B2 (ja) * 2012-06-11 2016-08-23 シチズンホールディングス株式会社 半導体発光装置
KR101997243B1 (ko) * 2012-09-13 2019-07-08 엘지이노텍 주식회사 발광 소자 및 조명 시스템
US20140191263A1 (en) * 2013-01-07 2014-07-10 Sabic Innovative Plastics Ip B.V. Compositions for an led reflector and articles thereof
TW201431124A (zh) * 2013-01-22 2014-08-01 矽品精密工業股份有限公司 發光二極體封裝件及其製法
JP6071661B2 (ja) * 2013-03-11 2017-02-01 株式会社東芝 半導体発光装置
JP2015038960A (ja) * 2013-05-16 2015-02-26 株式会社日本セラテック 発光装置
TWI707484B (zh) 2013-11-14 2020-10-11 晶元光電股份有限公司 發光裝置
TW201616689A (zh) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 經封裝之波長轉換發光裝置
CN105161609B (zh) * 2015-09-24 2018-06-12 广东晶科电子股份有限公司 一种芯片级led光源模组及其制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090057699A1 (en) * 2007-09-04 2009-03-05 Philips Lumileds Lighting Company, Llc LED with Particles in Encapsulant for Increased Light Extraction and Non-Yellow Off-State Color
US20120319563A1 (en) * 2011-06-17 2012-12-20 Citizen Holdings Co., Ltd. Light-emitting device and manufacturing method of the same
US20140151734A1 (en) * 2011-07-19 2014-06-05 Panasonic Corporation Light-emitting device and method for manufacturing same

Also Published As

Publication number Publication date
TW201729436A (zh) 2017-08-16
JP7016467B2 (ja) 2022-02-07
JP2017175118A (ja) 2017-09-28
TWI583028B (zh) 2017-05-11
JP2020053690A (ja) 2020-04-02
KR20170093735A (ko) 2017-08-16
JP6622735B2 (ja) 2019-12-18
KR20180132018A (ko) 2018-12-11

Similar Documents

Publication Publication Date Title
KR102210462B1 (ko) 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법
US10522728B2 (en) Beveled chip reflector for chip-scale packaging light-emitting device and manufacturing method of the same
US10763404B2 (en) Light emitting device with beveled reflector and manufacturing method of the same
JP6599295B2 (ja) 斜角反射体を備えた発光素子およびその製造方法
US10797209B2 (en) Light emitting device with beam shaping structure and manufacturing method of the same
US8766527B1 (en) Engineered-phosphor LED packages and related methods
US9431589B2 (en) Textured encapsulant surface in LED packages
US10707391B2 (en) Light emitting device with asymmetrical radiation pattern and manufacturing method of the same
US8492791B2 (en) Optical semiconductor device
KR20090004078A (ko) 발광 소자 패키지
US9741910B1 (en) Optoelectronic component
CN102844896A (zh) Led热量和光子提取装置
KR102045794B1 (ko) 칩-스케일 패키징 발광 소자를 위한 베벨형 칩 리플렉터 및 그 제조 방법
US11594664B2 (en) Light emitting diode package
US20200295242A1 (en) Light-emitting device and production method therefor

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
A107 Divisional application of patent
J201 Request for trial against refusal decision
J301 Trial decision

Free format text: TRIAL NUMBER: 2018101004900; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20181203

Effective date: 20200429

E902 Notification of reason for refusal
E90F Notification of reason for final refusal
GRNO Decision to grant (after opposition)
GRNT Written decision to grant