TWI570739B - 包括可縮放驅動器之裝置及方法 - Google Patents

包括可縮放驅動器之裝置及方法 Download PDF

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Publication number
TWI570739B
TWI570739B TW102110367A TW102110367A TWI570739B TW I570739 B TWI570739 B TW I570739B TW 102110367 A TW102110367 A TW 102110367A TW 102110367 A TW102110367 A TW 102110367A TW I570739 B TWI570739 B TW I570739B
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TW
Taiwan
Prior art keywords
drivers
die
driver
drive
semiconductor die
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Application number
TW102110367A
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English (en)
Chinese (zh)
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TW201403616A (zh
Inventor
林芬
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美光科技公司
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Publication of TW201403616A publication Critical patent/TW201403616A/zh
Application granted granted Critical
Publication of TWI570739B publication Critical patent/TWI570739B/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018585—Coupling arrangements; Interface arrangements using field effect transistors only programmable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/26—Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
TW102110367A 2012-03-27 2013-03-22 包括可縮放驅動器之裝置及方法 TWI570739B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/431,674 US8587340B2 (en) 2012-03-27 2012-03-27 Apparatuses including scalable drivers and methods

Publications (2)

Publication Number Publication Date
TW201403616A TW201403616A (zh) 2014-01-16
TWI570739B true TWI570739B (zh) 2017-02-11

Family

ID=49234090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102110367A TWI570739B (zh) 2012-03-27 2013-03-22 包括可縮放驅動器之裝置及方法

Country Status (7)

Country Link
US (3) US8587340B2 (https=)
EP (1) EP2831876B1 (https=)
JP (1) JP6082803B2 (https=)
KR (1) KR101936980B1 (https=)
CN (1) CN104285254B (https=)
TW (1) TWI570739B (https=)
WO (1) WO2013148199A1 (https=)

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US8587340B2 (en) 2012-03-27 2013-11-19 Micron Technology, Inc. Apparatuses including scalable drivers and methods
US9153312B2 (en) 2013-08-23 2015-10-06 Micron Technology, Inc. Methods and apparatuses including transmitter circuits
US9397566B2 (en) * 2014-03-20 2016-07-19 Intel Corporation Master-slave digital voltage regulators
US9042160B1 (en) * 2014-07-03 2015-05-26 Sandisk Technologies Inc. Memory device with resistive random access memory (ReRAM)
KR20160043714A (ko) * 2014-10-14 2016-04-22 에스케이하이닉스 주식회사 관통 비아를 갖는 반도체 메모리 장치
US9455189B1 (en) 2015-06-14 2016-09-27 Darryl G. Walker Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture
US20210125040A1 (en) * 2019-10-24 2021-04-29 International Business Machines Corporation 3d neural inference processing unit architectures

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TW200733127A (en) * 2006-02-22 2007-09-01 Hynix Semiconductor Inc Data output driving circuit of semiconductor memory apparatus
US7277382B1 (en) * 2001-01-09 2007-10-02 Urbain A. von der Embse Hybrid walsh encoder and decoder for CDMA
US7545164B2 (en) * 2005-09-30 2009-06-09 Samsung Electronics Co., Ltd. Output driver for controlling impedance and intensity of pre-emphasis driver using mode register set
US7671630B2 (en) * 2005-07-29 2010-03-02 Synopsys, Inc. USB 2.0 HS voltage-mode transmitter with tuned termination resistance
US20100177830A1 (en) * 2009-01-15 2010-07-15 International Business Machines Corporation Configurable pre-emphasis driver with selective constant and adjustable output impedance modes

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US6704818B1 (en) * 2000-12-29 2004-03-09 Intel Corporation Voltage-mode driver with pre-emphasis, slew-rate control and source termination
US7277382B1 (en) * 2001-01-09 2007-10-02 Urbain A. von der Embse Hybrid walsh encoder and decoder for CDMA
US7671630B2 (en) * 2005-07-29 2010-03-02 Synopsys, Inc. USB 2.0 HS voltage-mode transmitter with tuned termination resistance
US7545164B2 (en) * 2005-09-30 2009-06-09 Samsung Electronics Co., Ltd. Output driver for controlling impedance and intensity of pre-emphasis driver using mode register set
TW200733127A (en) * 2006-02-22 2007-09-01 Hynix Semiconductor Inc Data output driving circuit of semiconductor memory apparatus
US20100177830A1 (en) * 2009-01-15 2010-07-15 International Business Machines Corporation Configurable pre-emphasis driver with selective constant and adjustable output impedance modes

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Also Published As

Publication number Publication date
US9564878B2 (en) 2017-02-07
US20140070860A1 (en) 2014-03-13
JP6082803B2 (ja) 2017-02-15
TW201403616A (zh) 2014-01-16
CN104285254B (zh) 2016-07-20
KR101936980B1 (ko) 2019-01-09
US8587340B2 (en) 2013-11-19
KR20140140076A (ko) 2014-12-08
EP2831876A1 (en) 2015-02-04
JP2015520432A (ja) 2015-07-16
EP2831876A4 (en) 2015-11-11
EP2831876B1 (en) 2019-08-28
US8836395B2 (en) 2014-09-16
US20150137866A1 (en) 2015-05-21
US20130257489A1 (en) 2013-10-03
CN104285254A (zh) 2015-01-14
WO2013148199A1 (en) 2013-10-03

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