TWI569478B - 具有波長轉換層之發光二極體元件 - Google Patents

具有波長轉換層之發光二極體元件 Download PDF

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Publication number
TWI569478B
TWI569478B TW102102414A TW102102414A TWI569478B TW I569478 B TWI569478 B TW I569478B TW 102102414 A TW102102414 A TW 102102414A TW 102102414 A TW102102414 A TW 102102414A TW I569478 B TWI569478 B TW I569478B
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TW
Taiwan
Prior art keywords
emitting diode
wavelength conversion
light
conversion layer
substrate
Prior art date
Application number
TW102102414A
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English (en)
Chinese (zh)
Other versions
TW201334237A (zh
Inventor
王志銘
陳昭興
沈建賦
Original Assignee
晶元光電股份有限公司
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Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW201334237A publication Critical patent/TW201334237A/zh
Application granted granted Critical
Publication of TWI569478B publication Critical patent/TWI569478B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW102102414A 2012-02-07 2013-01-22 具有波長轉換層之發光二極體元件 TWI569478B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/367,781 US8957429B2 (en) 2012-02-07 2012-02-07 Light emitting diode with wavelength conversion layer

Publications (2)

Publication Number Publication Date
TW201334237A TW201334237A (zh) 2013-08-16
TWI569478B true TWI569478B (zh) 2017-02-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102102414A TWI569478B (zh) 2012-02-07 2013-01-22 具有波長轉換層之發光二極體元件

Country Status (6)

Country Link
US (1) US8957429B2 (https=)
JP (1) JP6145277B2 (https=)
KR (1) KR101885316B1 (https=)
CN (1) CN103247745B (https=)
DE (1) DE102013101153B4 (https=)
TW (1) TWI569478B (https=)

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US9246068B2 (en) * 2012-08-24 2016-01-26 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US9214610B2 (en) * 2012-08-24 2015-12-15 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
US10439107B2 (en) * 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
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CN106129231B (zh) * 2015-05-05 2019-11-22 新世纪光电股份有限公司 发光装置及其制作方法
TW201616689A (zh) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 經封裝之波長轉換發光裝置
US10026882B2 (en) * 2014-10-07 2018-07-17 Epistar Corporation Using MEMS fabrication incorporating into LED device mounting and assembly
CN111509111A (zh) * 2014-11-18 2020-08-07 首尔半导体株式会社 发光装置及包括该发光装置的车灯
US10297731B2 (en) 2014-11-26 2019-05-21 Bridgelux, Inc. Light emitting diode constructions and methods for making the same
CN105720173A (zh) * 2014-12-17 2016-06-29 日东电工株式会社 覆有荧光体层的光半导体元件和其制造方法
DE102015102460A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil
CN105304802A (zh) * 2015-10-12 2016-02-03 深圳万城节能股份有限公司 发光装置的制造方法
JP6447548B2 (ja) * 2016-03-14 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
CN107689408B (zh) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 发光二极管覆晶晶粒及显示器
JP6601552B2 (ja) * 2018-12-05 2019-11-06 日亜化学工業株式会社 発光装置の製造方法
TW202119652A (zh) * 2019-10-31 2021-05-16 隆達電子股份有限公司 顯示裝置及其製造方法
US12463077B2 (en) 2019-10-31 2025-11-04 Lextar Electronics Corporation Method of manufacturing display device
CN114664994B (zh) * 2020-12-22 2025-02-25 光宝光电(常州)有限公司 发光二极管结构

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US20080290351A1 (en) * 2007-05-24 2008-11-27 Shuichi Ajiki Semiconductor light emitting apparatus
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US20100176475A1 (en) * 2009-01-09 2010-07-15 Panasonic Corporation Optical device and method for fabricating the same

Also Published As

Publication number Publication date
CN103247745A (zh) 2013-08-14
DE102013101153B4 (de) 2022-11-17
JP6145277B2 (ja) 2017-06-07
KR20130091273A (ko) 2013-08-16
JP2013162130A (ja) 2013-08-19
US20130200398A1 (en) 2013-08-08
KR101885316B1 (ko) 2018-08-03
DE102013101153A1 (de) 2013-08-08
CN103247745B (zh) 2017-12-05
US8957429B2 (en) 2015-02-17
TW201334237A (zh) 2013-08-16

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