JP6145277B2 - 波長変換層を有する発光ダイオード素子 - Google Patents

波長変換層を有する発光ダイオード素子 Download PDF

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Publication number
JP6145277B2
JP6145277B2 JP2013020468A JP2013020468A JP6145277B2 JP 6145277 B2 JP6145277 B2 JP 6145277B2 JP 2013020468 A JP2013020468 A JP 2013020468A JP 2013020468 A JP2013020468 A JP 2013020468A JP 6145277 B2 JP6145277 B2 JP 6145277B2
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Japan
Prior art keywords
light emitting
emitting diode
wavelength conversion
layer
conversion layer
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JP2013020468A
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Japanese (ja)
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JP2013162130A (ja
JP2013162130A5 (https=
Inventor
チ−ミン，ワン
チャオ−シン，チェン
チエン−フ，シェン
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Ennostar Corporation
Epistar Corp
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Ennostar Corporation
Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2013020468A 2012-02-07 2013-02-05 波長変換層を有する発光ダイオード素子 Active JP6145277B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/367,781 US8957429B2 (en) 2012-02-07 2012-02-07 Light emitting diode with wavelength conversion layer
US13/367,781 2012-02-07

Publications (3)

Publication Number Publication Date
JP2013162130A JP2013162130A (ja) 2013-08-19
JP2013162130A5 JP2013162130A5 (https=) 2016-03-10
JP6145277B2 true JP6145277B2 (ja) 2017-06-07

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JP2013020468A Active JP6145277B2 (ja) 2012-02-07 2013-02-05 波長変換層を有する発光ダイオード素子

Country Status (6)

Country Link
US (1) US8957429B2 (https=)
JP (1) JP6145277B2 (https=)
KR (1) KR101885316B1 (https=)
CN (1) CN103247745B (https=)
DE (1) DE102013101153B4 (https=)
TW (1) TWI569478B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2900049B2 (ja) 1989-12-26 1999-06-02 オムロン株式会社 印字機能付きカード処理装置

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013118072A2 (en) 2012-02-10 2013-08-15 Koninklijke Philips N.V. Wavelength converted light emitting device
US10276758B2 (en) * 2012-03-19 2019-04-30 Lumileds Llc Singulaton of light emitting devices before and after application of phosphor
US9246068B2 (en) * 2012-08-24 2016-01-26 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US9214610B2 (en) * 2012-08-24 2015-12-15 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
US10439107B2 (en) * 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN106129231B (zh) * 2015-05-05 2019-11-22 新世纪光电股份有限公司 发光装置及其制作方法
TW201616689A (zh) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 經封裝之波長轉換發光裝置
US10026882B2 (en) * 2014-10-07 2018-07-17 Epistar Corporation Using MEMS fabrication incorporating into LED device mounting and assembly
CN111509111A (zh) * 2014-11-18 2020-08-07 首尔半导体株式会社 发光装置及包括该发光装置的车灯
US10297731B2 (en) 2014-11-26 2019-05-21 Bridgelux, Inc. Light emitting diode constructions and methods for making the same
CN105720173A (zh) * 2014-12-17 2016-06-29 日东电工株式会社 覆有荧光体层的光半导体元件和其制造方法
DE102015102460A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil
CN105304802A (zh) * 2015-10-12 2016-02-03 深圳万城节能股份有限公司 发光装置的制造方法
JP6447548B2 (ja) * 2016-03-14 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
CN107689408B (zh) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 发光二极管覆晶晶粒及显示器
JP6601552B2 (ja) * 2018-12-05 2019-11-06 日亜化学工業株式会社 発光装置の製造方法
TW202119652A (zh) * 2019-10-31 2021-05-16 隆達電子股份有限公司 顯示裝置及其製造方法
US12463077B2 (en) 2019-10-31 2025-11-04 Lextar Electronics Corporation Method of manufacturing display device
CN114664994B (zh) * 2020-12-22 2025-02-25 光宝光电(常州)有限公司 发光二极管结构

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756186B2 (en) 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
KR20060059891A (ko) * 2003-06-04 2006-06-02 유명철 수직 구조 화합물 반도체 디바이스의 제조 방법
JP4496774B2 (ja) 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
JP4805831B2 (ja) * 2004-03-18 2011-11-02 パナソニック株式会社 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置
US8547011B2 (en) * 2004-04-28 2013-10-01 Zeon Corporation Layered product, luminescence device and use thereof
US7569406B2 (en) * 2006-01-09 2009-08-04 Cree, Inc. Method for coating semiconductor device using droplet deposition
JP5091421B2 (ja) * 2006-04-07 2012-12-05 株式会社東芝 半導体発光装置
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
TWI308401B (en) * 2006-07-04 2009-04-01 Epistar Corp High efficient phosphor-converted light emitting diode
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
JP5141077B2 (ja) * 2007-04-03 2013-02-13 日亜化学工業株式会社 発光装置及びその製造方法
JP5158472B2 (ja) * 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
TWI396298B (zh) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
US9024340B2 (en) * 2007-11-29 2015-05-05 Nichia Corporation Light emitting apparatus and method for producing the same
JP2009252898A (ja) * 2008-04-03 2009-10-29 Toyoda Gosei Co Ltd 光源装置
CN101621101A (zh) * 2008-06-30 2010-01-06 展晶科技(深圳)有限公司 发光二极管及其制造方法
JP2010161321A (ja) * 2009-01-09 2010-07-22 Panasonic Corp 光学デバイスおよびその製造方法
EP3547380B1 (en) * 2010-02-09 2023-12-20 Nichia Corporation Light emitting device
JP4875185B2 (ja) * 2010-06-07 2012-02-15 株式会社東芝 光半導体装置
US8241932B1 (en) * 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
JP5656748B2 (ja) * 2011-05-16 2015-01-21 シチズンホールディングス株式会社 半導体発光素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2900049B2 (ja) 1989-12-26 1999-06-02 オムロン株式会社 印字機能付きカード処理装置

Also Published As

Publication number Publication date
CN103247745A (zh) 2013-08-14
DE102013101153B4 (de) 2022-11-17
KR20130091273A (ko) 2013-08-16
JP2013162130A (ja) 2013-08-19
TWI569478B (zh) 2017-02-01
US20130200398A1 (en) 2013-08-08
KR101885316B1 (ko) 2018-08-03
DE102013101153A1 (de) 2013-08-08
CN103247745B (zh) 2017-12-05
US8957429B2 (en) 2015-02-17
TW201334237A (zh) 2013-08-16

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