TWI569444B - 高品質ＧａＮ高電壓矽異質結構場效電晶體 - Google Patents

高品質ＧａＮ高電壓矽異質結構場效電晶體 Download PDF

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TWI569444B
TWI569444B TW104106155A TW104106155A TWI569444B TW I569444 B TWI569444 B TW I569444B TW 104106155 A TW104106155 A TW 104106155A TW 104106155 A TW104106155 A TW 104106155A TW I569444 B TWI569444 B TW I569444B
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Taiwan
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gan
film
layer
aln
wafer
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TW104106155A
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TW201539752A (zh
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傑莫 藍丹尼
強 艾德伍茲
劉玲玲
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電源整合公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Chemical Vapour Deposition (AREA)
TW104106155A 2011-12-09 2012-12-07 高品質ＧａＮ高電壓矽異質結構場效電晶體 TWI569444B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/316,305 US8507947B2 (en) 2011-12-09 2011-12-09 High quality GaN high-voltage HFETS on silicon

Publications (2)

Publication Number Publication Date
TW201539752A TW201539752A (zh) 2015-10-16
TWI569444B true TWI569444B (zh) 2017-02-01

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TW104106155A TWI569444B (zh) 2011-12-09 2012-12-07 高品質ＧａＮ高電壓矽異質結構場效電晶體
TW101145982A TWI481027B (zh) 2011-12-09 2012-12-07 高品質ＧａＮ高電壓矽異質結構場效電晶體

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Country Status (5)

Country Link
US (4) US8507947B2 (https=)
EP (1) EP2602812B1 (https=)
JP (1) JP6141627B2 (https=)
CN (2) CN103165444B (https=)
TW (2) TWI569444B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507947B2 (en) * 2011-12-09 2013-08-13 Power Integrations, Inc. High quality GaN high-voltage HFETS on silicon
US9478708B2 (en) 2015-03-11 2016-10-25 International Business Machines Corporation Embedded gallium—nitride in silicon
US10818611B2 (en) 2015-07-01 2020-10-27 Ii-Vi Delaware, Inc. Stress relief in semiconductor wafers
US20170148747A1 (en) * 2015-07-01 2017-05-25 Ii-Vi Optoelectronic Devices, Inc. Stress relief in semiconductor wafers
CN105591004B (zh) 2016-03-29 2020-07-10 苏州晶湛半导体有限公司 基于图形化Si衬底的LED外延片及其制备方法
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures
KR102680861B1 (ko) * 2016-12-15 2024-07-03 삼성전자주식회사 질화 갈륨 기판의 제조 방법
US20220139709A1 (en) * 2020-11-05 2022-05-05 International Business Machines Corporation Confined gallium nitride epitaxial layers
DE102022003646A1 (de) * 2022-09-30 2024-04-04 Azur Space Solar Power Gmbh Halbleiterscheibe zur Ausbildung von GaN-Halbleiterbauelementen

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040200406A1 (en) * 2003-04-10 2004-10-14 Andrzej Peczalski Method for growing single crystal GaN on silicon

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164510A (ja) * 1998-11-26 2000-06-16 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体装置およびその製造方法
WO2001069663A1 (fr) * 2000-03-14 2001-09-20 Toyoda Gosei Co., Ltd. Procede de production de semiconducteur a base de compose de nitrure iii et element en semiconducteur a base de compose de nitrure iii
US20030012984A1 (en) * 2001-07-11 2003-01-16 Tetsuzo Ueda Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors
JP3785970B2 (ja) * 2001-09-03 2006-06-14 日本電気株式会社 Ｉｉｉ族窒化物半導体素子の製造方法
JP2003224071A (ja) * 2002-01-29 2003-08-08 Matsushita Electric Ind Co Ltd 窒化物系半導体の製造方法及びそれを用いた窒化物半導体素子
JP2004051446A (ja) * 2002-07-22 2004-02-19 Asahi Kasei Corp 酸化物単結晶薄膜形成方法および半導体薄膜形成方法
US7547925B2 (en) 2005-11-14 2009-06-16 Palo Alto Research Center Incorporated Superlattice strain relief layer for semiconductor devices
US7413982B2 (en) * 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
RU2326993C2 (ru) * 2006-07-25 2008-06-20 Самсунг Электро-Меканикс Ко., Лтд. Способ выращивания монокристалла нитрида на кремниевой пластине, нитридный полупроводниковый светоизлучающий диод, изготовленный с его использованием, и способ такого изготовления
JP2008053554A (ja) * 2006-08-25 2008-03-06 Osaka Univ 電子デバイスとその製造方法
JP5401758B2 (ja) * 2006-12-12 2014-01-29 サンケン電気株式会社 半導体装置及びその製造方法
KR20090107882A (ko) * 2008-04-10 2009-10-14 삼성전자주식회사 고정층을 포함하는 경사 조성 봉지 박막 및 그의 제조방법
WO2010061617A1 (ja) * 2008-11-28 2010-06-03 国立大学法人山口大学 半導体発光素子及びその製造方法
EP2498293B1 (en) * 2009-11-06 2018-08-01 NGK Insulators, Ltd. Epitaxial substrate for semiconductor element and method for producing epitaxial substrate for semiconductor element
JP2011198837A (ja) * 2010-03-17 2011-10-06 Renesas Electronics Corp 半導体装置およびその製造方法
US8507947B2 (en) * 2011-12-09 2013-08-13 Power Integrations, Inc. High quality GaN high-voltage HFETS on silicon

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040200406A1 (en) * 2003-04-10 2004-10-14 Andrzej Peczalski Method for growing single crystal GaN on silicon

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
William E. Fenwicka,etc."MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al2O3 interlayer", Journal of Crystal Growth, Vol. 311,Issue18, 1 Sep.2009 *

Also Published As

Publication number Publication date
CN103165444A (zh) 2013-06-19
TWI481027B (zh) 2015-04-11
TW201539752A (zh) 2015-10-16
JP2013123052A (ja) 2013-06-20
US20150364552A1 (en) 2015-12-17
CN106206258A (zh) 2016-12-07
US20130302972A1 (en) 2013-11-14
JP6141627B2 (ja) 2017-06-07
CN103165444B (zh) 2016-09-21
US20130146863A1 (en) 2013-06-13
TW201342593A (zh) 2013-10-16
EP2602812A1 (en) 2013-06-12
US20140374768A1 (en) 2014-12-25
US9437688B2 (en) 2016-09-06
US8507947B2 (en) 2013-08-13
US8703561B2 (en) 2014-04-22
CN106206258B (zh) 2018-11-09
EP2602812B1 (en) 2018-01-24
US9147734B2 (en) 2015-09-29

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