CN103165444B - 硅上的高质量GaN高压HFET - Google Patents

硅上的高质量GaN高压HFET Download PDF

Info

Publication number
CN103165444B
CN103165444B CN201210520205.3A CN201210520205A CN103165444B CN 103165444 B CN103165444 B CN 103165444B CN 201210520205 A CN201210520205 A CN 201210520205A CN 103165444 B CN103165444 B CN 103165444B
Authority
CN
China
Prior art keywords
film
gan
laminate layers
layer
laminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210520205.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN103165444A (zh
Inventor
J·拉姆德尼
J·P·爱德华兹
L·刘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Priority to CN201610751506.5A priority Critical patent/CN106206258B/zh
Publication of CN103165444A publication Critical patent/CN103165444A/zh
Application granted granted Critical
Publication of CN103165444B publication Critical patent/CN103165444B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Chemical Vapour Deposition (AREA)
CN201210520205.3A 2011-12-09 2012-12-06 硅上的高质量GaN高压HFET Active CN103165444B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610751506.5A CN106206258B (zh) 2011-12-09 2012-12-06 在硅衬底上形成GaN层的方法以及GaN衬底

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/316,305 2011-12-09
US13/316,305 US8507947B2 (en) 2011-12-09 2011-12-09 High quality GaN high-voltage HFETS on silicon

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610751506.5A Division CN106206258B (zh) 2011-12-09 2012-12-06 在硅衬底上形成GaN层的方法以及GaN衬底

Publications (2)

Publication Number Publication Date
CN103165444A CN103165444A (zh) 2013-06-19
CN103165444B true CN103165444B (zh) 2016-09-21

Family

ID=47263114

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201210520205.3A Active CN103165444B (zh) 2011-12-09 2012-12-06 硅上的高质量GaN高压HFET
CN201610751506.5A Active CN106206258B (zh) 2011-12-09 2012-12-06 在硅衬底上形成GaN层的方法以及GaN衬底

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610751506.5A Active CN106206258B (zh) 2011-12-09 2012-12-06 在硅衬底上形成GaN层的方法以及GaN衬底

Country Status (5)

Country Link
US (4) US8507947B2 (https=)
EP (1) EP2602812B1 (https=)
JP (1) JP6141627B2 (https=)
CN (2) CN103165444B (https=)
TW (2) TWI569444B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507947B2 (en) * 2011-12-09 2013-08-13 Power Integrations, Inc. High quality GaN high-voltage HFETS on silicon
US9478708B2 (en) 2015-03-11 2016-10-25 International Business Machines Corporation Embedded gallium—nitride in silicon
US10818611B2 (en) 2015-07-01 2020-10-27 Ii-Vi Delaware, Inc. Stress relief in semiconductor wafers
US20170148747A1 (en) * 2015-07-01 2017-05-25 Ii-Vi Optoelectronic Devices, Inc. Stress relief in semiconductor wafers
CN105591004B (zh) 2016-03-29 2020-07-10 苏州晶湛半导体有限公司 基于图形化Si衬底的LED外延片及其制备方法
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures
KR102680861B1 (ko) * 2016-12-15 2024-07-03 삼성전자주식회사 질화 갈륨 기판의 제조 방법
US20220139709A1 (en) * 2020-11-05 2022-05-05 International Business Machines Corporation Confined gallium nitride epitaxial layers
DE102022003646A1 (de) * 2022-09-30 2024-04-04 Azur Space Solar Power Gmbh Halbleiterscheibe zur Ausbildung von GaN-Halbleiterbauelementen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1429401A (zh) * 2000-03-14 2003-07-09 丰田合成株式会社 用于制造ⅲ族氮化物系化合物半导体的方法以及ⅲ族氮化物系化合物半导体器件
US20040200406A1 (en) * 2003-04-10 2004-10-14 Andrzej Peczalski Method for growing single crystal GaN on silicon
US20080284022A1 (en) * 2006-12-12 2008-11-20 Sanken Electric Co., Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164510A (ja) * 1998-11-26 2000-06-16 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体装置およびその製造方法
US20030012984A1 (en) * 2001-07-11 2003-01-16 Tetsuzo Ueda Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors
JP3785970B2 (ja) * 2001-09-03 2006-06-14 日本電気株式会社 Ｉｉｉ族窒化物半導体素子の製造方法
JP2003224071A (ja) * 2002-01-29 2003-08-08 Matsushita Electric Ind Co Ltd 窒化物系半導体の製造方法及びそれを用いた窒化物半導体素子
JP2004051446A (ja) * 2002-07-22 2004-02-19 Asahi Kasei Corp 酸化物単結晶薄膜形成方法および半導体薄膜形成方法
US7547925B2 (en) 2005-11-14 2009-06-16 Palo Alto Research Center Incorporated Superlattice strain relief layer for semiconductor devices
US7413982B2 (en) * 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
RU2326993C2 (ru) * 2006-07-25 2008-06-20 Самсунг Электро-Меканикс Ко., Лтд. Способ выращивания монокристалла нитрида на кремниевой пластине, нитридный полупроводниковый светоизлучающий диод, изготовленный с его использованием, и способ такого изготовления
JP2008053554A (ja) * 2006-08-25 2008-03-06 Osaka Univ 電子デバイスとその製造方法
KR20090107882A (ko) * 2008-04-10 2009-10-14 삼성전자주식회사 고정층을 포함하는 경사 조성 봉지 박막 및 그의 제조방법
WO2010061617A1 (ja) * 2008-11-28 2010-06-03 国立大学法人山口大学 半導体発光素子及びその製造方法
EP2498293B1 (en) * 2009-11-06 2018-08-01 NGK Insulators, Ltd. Epitaxial substrate for semiconductor element and method for producing epitaxial substrate for semiconductor element
JP2011198837A (ja) * 2010-03-17 2011-10-06 Renesas Electronics Corp 半導体装置およびその製造方法
US8507947B2 (en) * 2011-12-09 2013-08-13 Power Integrations, Inc. High quality GaN high-voltage HFETS on silicon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1429401A (zh) * 2000-03-14 2003-07-09 丰田合成株式会社 用于制造ⅲ族氮化物系化合物半导体的方法以及ⅲ族氮化物系化合物半导体器件
US20040200406A1 (en) * 2003-04-10 2004-10-14 Andrzej Peczalski Method for growing single crystal GaN on silicon
US20080284022A1 (en) * 2006-12-12 2008-11-20 Sanken Electric Co., Ltd. Semiconductor device and method for manufacturing the same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD;Weijun Luo 等;《Microelectronics Journal》;20080418;第39卷;1108-1111 *
Growth of thick,continuous GaN layer on 4-in, Si substrates by metalorganic chemical vapor deposition;H.P.D.Schenk 等;《Journal or Crystal Growth》;20101119;第314卷;85-91 *
Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate layers;Akihiko KIKUCHI 等;《Jpn.J.Appl.Phys》;20000415;第39卷;L330-L333 *
MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer;William E 等;《Journal of Crystal Growth》;20090901;第311卷(第18期);4306-4310 *

Also Published As

Publication number Publication date
CN103165444A (zh) 2013-06-19
TWI481027B (zh) 2015-04-11
TW201539752A (zh) 2015-10-16
JP2013123052A (ja) 2013-06-20
US20150364552A1 (en) 2015-12-17
CN106206258A (zh) 2016-12-07
US20130302972A1 (en) 2013-11-14
JP6141627B2 (ja) 2017-06-07
US20130146863A1 (en) 2013-06-13
TW201342593A (zh) 2013-10-16
TWI569444B (zh) 2017-02-01
EP2602812A1 (en) 2013-06-12
US20140374768A1 (en) 2014-12-25
US9437688B2 (en) 2016-09-06
US8507947B2 (en) 2013-08-13
US8703561B2 (en) 2014-04-22
CN106206258B (zh) 2018-11-09
EP2602812B1 (en) 2018-01-24
US9147734B2 (en) 2015-09-29

Similar Documents

Publication Publication Date Title
CN103165444B (zh) 硅上的高质量GaN高压HFET
JP4335187B2 (ja) 窒化物系半導体装置の製造方法
JP3886341B2 (ja) 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
CN104205298B (zh) 在硅基板上形成iii/v族共形层的方法
CN102465342B (zh) 制造GaN基膜的方法
CN102465343A (zh) 制造GaN基膜的方法
JP4449357B2 (ja) 電界効果トランジスタ用エピタキシャルウェハの製造方法
KR101021775B1 (ko) 에피택셜 성장 방법 및 이를 이용한 에피택셜층 적층 구조
TW201005141A (en) Method for manufacturing nitrogen compound semiconductor substrate, nitrogen compound semiconductor substrate, method for manufacturing single crystal sic substrate, and single crystal sic substrate
JP4213896B2 (ja) 半導体基板の製造方法
JP4679810B2 (ja) エピタキシャル基板、半導体積層構造、エピタキシャル基板の製造方法、およびエピタキシャル基板表面におけるピット発生抑制方法
KR101517808B1 (ko) 크랙 감소를 위한 실리콘 기판 위 GaN 성장방법
TW201513176A (zh) 半導體晶圓以及生產半導體晶圓的方法
JP2017130539A (ja) 窒化物半導体装置、窒化物半導体装置の作製方法、及び製造装置
JP7619349B2 (ja) 窒化物半導体層付き単結晶シリコン基板及び窒化物半導体層付き単結晶シリコン基板の製造方法
CN115896947B (zh) 一种在陶瓷衬底上生长单晶iii族氮化物的方法
KR100839224B1 (ko) ＧａＮ 후막의 제조방법
JP4524630B2 (ja) Ｈｅｍｔ用エピタキシャルウェハの製造方法
JP2023039743A (ja) 窒化物半導体基板の製造方法
KR20240106043A (ko) GaN 기판의 제조방법
TW511143B (en) Method for forming GaN/AlN superlattice structure

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant